JP5966063B2 - 垂直ナノワイヤアレイ上の穿孔コンタクト電極 - Google Patents
垂直ナノワイヤアレイ上の穿孔コンタクト電極 Download PDFInfo
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- JP5966063B2 JP5966063B2 JP2015142313A JP2015142313A JP5966063B2 JP 5966063 B2 JP5966063 B2 JP 5966063B2 JP 2015142313 A JP2015142313 A JP 2015142313A JP 2015142313 A JP2015142313 A JP 2015142313A JP 5966063 B2 JP5966063 B2 JP 5966063B2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
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- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 29
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 29
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
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- H—ELECTRICITY
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Biochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Immunology (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Silicon Compounds (AREA)
Description
ナノワイヤの形成
1.約1−10Ωcmの抵抗を有するP型シリコンウェハから始める。
2.下記の洗浄ステップを室温で行う(図1(a))。
硫酸(H2SO4)と30%の過酸化水素(H202)の3:1溶液中で30分間。
酸素(H20)、水酸化アンモニウム(NH4OH)および過酸化水素(H202)の5:1:1溶液中で30分間。
3.試料上にポリスチレンナノスフェア溶液(10%固体)を490nm堆積させるとともに、密集単分子層(基板1cm2につき約1個のナノスフェア溶液)を得るために回転塗布する(図1(b))。
4.試料を一夜乾燥させる。
5.酸素プラズマエッチングを用いてナノスフェアの直径を目標値に減少させる(図1(c))。
6.eビーム蒸発器を用いて試料の頂部に25nmの金(gold)を堆積させる(図1(d))。
7.ナノスフェア及び不要な金属をクロロホルム(CHCl3)中に5分以下(〜5分)の時間浸して除去する(図1(e))。簡素な高周波処理は場合により必要になる。
8.ナノワイヤを約4〜8μmの長さにするために、4.6Mのフッ化水素と、0.44Mの過酸化水素の溶液の中で、20〜30分間、試料をエッチングする(図1(f))。
9.残存している金(gold)を、トリフルオロ酢酸金(TFA gold)エッチング液を用いて除去する(図1(g))。
10.臨界点乾燥機(critical point dryer)を用いて、丁寧に試料を洗い流すとともに乾燥させる。
電極の形成
11.ナノワイヤアレイ全体を覆う厚いフォトレジスト層を堆積させる。
12.ナノワイヤの先端を露出させるために、水素プラズマエッチング(oxygen plasma etch)を用いて、フォトレジスト層の最上層を除去する(図1(h))。
13.上記ステップ3と同じプロセスを用いてポリスチレンナノスフィアを490nm堆積させる(図1(i))。
14.酸素プラズマエッチングを用いてナノスフェアの直径を目標値に減少させる(図1(j))。
15.eビーム蒸発器を用いて、20nmのチタン(titanium)と100nmの金(gold)からなる電極層を堆積させる(図1(k))。
16.試料をアセトン(acetone)中に一夜浸してフォトレジストとナノスフェア層を除去する(図1(l))。ナノスフェアを完全に除去するために、簡素な高周波処理および/またはクロロホルム(CHCl3)に浸すことが場合により必要になる。
17.臨界点乾燥機を用いて、試料を乾燥させる。
Claims (7)
- 支持体と、前記支持体に対して垂直から10°未満ずれた角度を有するとともに、当該支持体とそれぞれ接触する第二の端部を有する複数のナノワイヤと、を備える構造体を準備することと、
前記各ナノワイヤの一部を覆うとともに、前記各ナノワイヤの第一の端部を露出させておく充填材料の層を堆積させることと、
前記充填材料の上に複数のナノ粒子を堆積させることと、
前記ナノ粒子、前記ナノワイヤの端部および任意の露出した前記充填材料の上に電極材料を堆積させることと、
前記ナノ粒子および前記充填材料を除去して各ナノワイヤの第一の端部と接触する電極を形成することと、を含む方法であって、
前記電極が複数の穿孔を有し、
前記電極材料を堆積する前に、前記ナノ粒子のサイズを減少させることを含む、方法。 - 前記ナノ粒子はナノスフェアである、
請求項1に記載の方法。 - 前記充填材料を堆積することは、
前記充填材料によって前記ナノワイヤを完全に覆うことと、
前記ナノワイヤの第一の端部を露出させるために前記充填材料を十分に除去することと、
を含む請求項1に記載の方法。 - 充填材料に固定された相互に平行な複数のナノワイヤを備える構造体を準備する工程であって、当該ナノワイヤが当該構造体の第一の側面の上に露出した第一の端部を有する、工程と、
前記第一の側面の上の前記充填材料の上に複数のナノ粒子を堆積させる工程と、
前記ナノ粒子、前記ナノワイヤの第一の端部および第一の側面の上の任意の露出した前記充填材料の上に電極材料を堆積させる工程と、
前記ナノ粒子及び充填材料を除去して前記各ナノワイヤの第一の端部と接触する第一の電極を形成する工程と、を含む方法であって、
前記第一の電極は複数の穿孔を有し、
前記電極材料を堆積する前に、前記ナノ粒子のサイズを減少させることを含む、方法。 - 前記構造体は、当該構造体の第二の側面及び各ナノワイヤの第二の端部と接触する支持体をさらに備え、
前記支持体を除去して第二の端部を露出させる工程を含む、請求項4に記載の方法。 - 前記構造体は、各ナノワイヤの露出した第二の端部を有する当該構造体の第二の側面をさらに備え、
各ナノワイヤの一部を覆うとともに、前記充填材料が既に除去されていれば、各ナノワイヤの第二の端部を露出させておく前記充填材料の第二層を堆積させる工程と、
前記ナノワイヤの第二の端部及び第二の側面上の任意の露出した充填材料の上に、第二の電極材料を堆積させる工程と、
前記充填材料を除去し、各ナノワイヤの第二の端部と接触する第二の電極を形成する工程と、
をさらに含む請求項4に記載の方法。 - 前記構造体は、各ナノワイヤの露出した第二の端部を有する当該構造体の第二の側面をさらに備え、
各ナノワイヤの一部を覆うとともに、前記充填材料が既に除去されていれば、各ナノワイヤの第二の端部を露出させておく前記充填材料の第二層を堆積させる工程と、
第二の複数のナノ粒子を、前記第二の側面上の前記充填材料の上に堆積させる工程と、
前記第二のナノ粒子、前記ナノワイヤの第二の端部及び第二の側面上の任意の露出した充填材料の上に、第二の電極材料を堆積させる工程と、
前記第二のナノ粒子及び前記充填材料を除去し、各ナノワイヤの第二の端部と接触する第二の電極を形成する工程と、を含む方法であって、
前記第二の電極は複数の穿孔を有する請求項4に記載の方法。
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