JP5964591B2 - 有機発光表示装置とその製造方法 - Google Patents
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- JP5964591B2 JP5964591B2 JP2012003162A JP2012003162A JP5964591B2 JP 5964591 B2 JP5964591 B2 JP 5964591B2 JP 2012003162 A JP2012003162 A JP 2012003162A JP 2012003162 A JP2012003162 A JP 2012003162A JP 5964591 B2 JP5964591 B2 JP 5964591B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 224
- 239000003990 capacitor Substances 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002356 single layer Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Description
20 キャパシタ、
21、22 第1電極層、
25 第1絶縁層、
26 第2電極層、
30 薄膜トランジスタ、
31、32 ゲート電極、
33 第2絶縁層、
34 活性層、
35 第3絶縁層、
35a 開口、
36、37 ソース/ドレイン電極、
40 有機発光素子、
41、42 画素電極、
42a 開口、
43 有機発光層、
44 対向電極、
50 画素定義膜。
Claims (10)
- 基板と、
前記基板上に形成された有機発光素子と、
前記有機発光素子に電気的に連結された薄膜トランジスタ及びキャパシタと、
前記薄膜トランジスタ及び前記キャパシタ上に形成された画素定義膜と、を備え、
前記キャパシタは、
前記基板上に形成された第1電極層と、第1絶縁層と、前記第1電極層と対向する第2電極層と、を含み、
前記第1絶縁層は、前記第1電極層と前記第2電極層との間に単一層として介在し、
前記第2電極層は、前記第1絶縁層と前記画素定義膜との間に単一層として介在する、有機発光表示装置。 - 前記第1電極層は、基板上に形成された透明電極層と、その透明電極層上に形成された低抵抗電極層と、を含む請求項1に記載の有機発光表示装置。
- 前記薄膜トランジスタは、前記第1電極層と同一層で形成されたゲート電極と、前記ゲート電極上に形成された第2絶縁層と、前記第2絶縁層上に形成された活性層と、前記活性層上に前記第1絶縁層と同一層で形成される第3絶縁層と、前記第3絶縁層上に前記第2電極層と同一層で形成され、かつ前記活性層と連結されたソース/ドレイン電極と、を含む請求項1または2に記載の有機発光表示装置。
- 前記ゲート電極は、基板上に形成された透明電極層と、その透明電極層上に形成された低抵抗電極層と、を含む請求項3に記載の有機発光表示装置。
- 前記有機発光素子は、前記薄膜トランジスタと連結された画素電極と、その画素電極に対向する対向電極と、前記画素電極と対向電極との間に介在された有機発光層と、を含む請求項1〜4のいずれか1項に記載の有機発光表示装置。
- 前記画素電極は、基板上に形成されて前記有機発光層と直結された透明電極層と、その透明電極層上に形成されて前記薄膜トランジスタと直結された低抵抗電極層と、を含む請求項5に記載の有機発光表示装置。
- 基板上に有機発光素子の画素電極と、薄膜トランジスタのゲート電極及びキャパシタの第1電極層とを同一層で形成する段階と、
前記薄膜トランジスタのゲート電極上に第2絶縁層を形成する段階と、
前記第2絶縁層上に活性層を形成する段階と、
前記第1電極層上の第1絶縁層と前記活性層上の第3絶縁層とを同一の単一層で形成する段階と、
前記第1絶縁層上の第2電極層と前記第3絶縁層上のソース/ドレイン電極とを同一の単一層で形成する段階と、
前記第2電極層および前記ソース/ドレイン電極上に画素定義膜を形成する段階と、を含む有機発光表示装置の製造方法。 - 前記第1電極層と前記ゲート電極及び前記画素電極は、それぞれ基板上に形成された透明電極層と、その透明電極層上に形成された低抵抗電極層と、を含む請求項7に記載の有機発光表示装置の製造方法。
- 前記画素電極上に有機発光層を形成する段階と、前記有機発光層上に対向電極を形成する段階と、をさらに含む請求項7または8に記載の有機発光表示装置の製造方法。
- 前記有機発光層は、前記画素電極上に形成された画素定義膜をエッチングして一部を露出させた後、その露出された画素電極上に形成する請求項9に記載の有機発光表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2011-0022449 | 2011-03-14 | ||
KR1020110022449A KR101781532B1 (ko) | 2011-03-14 | 2011-03-14 | 유기 발광 표시 장치와 그 제조방법 |
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JP2012195283A JP2012195283A (ja) | 2012-10-11 |
JP5964591B2 true JP5964591B2 (ja) | 2016-08-03 |
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JP2012003162A Active JP5964591B2 (ja) | 2011-03-14 | 2012-01-11 | 有機発光表示装置とその製造方法 |
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US (1) | US8901563B2 (ja) |
EP (1) | EP2500946B1 (ja) |
JP (1) | JP5964591B2 (ja) |
KR (1) | KR101781532B1 (ja) |
CN (1) | CN102683382B (ja) |
TW (1) | TWI555191B (ja) |
Families Citing this family (15)
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KR20120128966A (ko) * | 2011-05-18 | 2012-11-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
DE102012109218B4 (de) * | 2012-09-28 | 2018-06-28 | Osram Oled Gmbh | Verfahren zum Herstellen einer optoelektronischen Baugruppe und optoelektronische Baugruppe |
CN103824862B (zh) * | 2012-11-16 | 2016-12-07 | 群康科技(深圳)有限公司 | 薄膜晶体管基板与显示器 |
JP6300589B2 (ja) | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101548304B1 (ko) * | 2013-04-23 | 2015-08-28 | 엘지디스플레이 주식회사 | 유기 전계 발광 표시장치 및 그 제조방법 |
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KR101041141B1 (ko) * | 2009-03-03 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101127574B1 (ko) * | 2009-04-06 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법 |
KR101050461B1 (ko) * | 2009-04-23 | 2011-07-19 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 유기 발광 디스플레이 장치의 제조방법 |
KR101643835B1 (ko) * | 2009-07-10 | 2016-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101093424B1 (ko) * | 2009-11-10 | 2011-12-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
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- 2012-01-24 US US13/356,923 patent/US8901563B2/en active Active
- 2012-01-31 TW TW101103043A patent/TWI555191B/zh active
- 2012-02-10 CN CN201210030495.3A patent/CN102683382B/zh active Active
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KR20120104816A (ko) | 2012-09-24 |
EP2500946B1 (en) | 2017-01-04 |
JP2012195283A (ja) | 2012-10-11 |
CN102683382A (zh) | 2012-09-19 |
EP2500946A2 (en) | 2012-09-19 |
US20120235147A1 (en) | 2012-09-20 |
EP2500946A3 (en) | 2014-03-05 |
US8901563B2 (en) | 2014-12-02 |
CN102683382B (zh) | 2016-05-04 |
TWI555191B (zh) | 2016-10-21 |
TW201238045A (en) | 2012-09-16 |
KR101781532B1 (ko) | 2017-10-24 |
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