JP5953645B2 - 半導体基板の切断方法及び半導体基板の切断装置 - Google Patents

半導体基板の切断方法及び半導体基板の切断装置 Download PDF

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JP5953645B2
JP5953645B2 JP2010256217A JP2010256217A JP5953645B2 JP 5953645 B2 JP5953645 B2 JP 5953645B2 JP 2010256217 A JP2010256217 A JP 2010256217A JP 2010256217 A JP2010256217 A JP 2010256217A JP 5953645 B2 JP5953645 B2 JP 5953645B2
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wafer
grinding
modified region
back surface
polishing
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JP2012109357A (ja
JP2012109357A5 (enrdf_load_stackoverflow
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修平 押田
修平 押田
翼 清水
翼 清水
藤田　隆
隆 藤田
明 植木原
明 植木原
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Tokyo Seimitsu Co Ltd
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Tokyo Seimitsu Co Ltd
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laser Beam Processing (AREA)
JP2010256217A 2010-11-16 2010-11-16 半導体基板の切断方法及び半導体基板の切断装置 Active JP5953645B2 (ja)

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JP2010256217A JP5953645B2 (ja) 2010-11-16 2010-11-16 半導体基板の切断方法及び半導体基板の切断装置

Applications Claiming Priority (1)

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JP2010256217A JP5953645B2 (ja) 2010-11-16 2010-11-16 半導体基板の切断方法及び半導体基板の切断装置

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2016085471A Division JP6081005B2 (ja) 2016-04-21 2016-04-21 研削・研磨装置及び研削・研磨方法
JP2016087866A Division JP6081006B2 (ja) 2016-04-26 2016-04-26 ウェハ割断方法及びウェハ割断装置
JP2016117072A Division JP6081008B2 (ja) 2016-06-13 2016-06-13 ウェハ加工装置及びウェハ加工方法

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JP2012109357A JP2012109357A (ja) 2012-06-07
JP2012109357A5 JP2012109357A5 (enrdf_load_stackoverflow) 2013-12-05
JP5953645B2 true JP5953645B2 (ja) 2016-07-20

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014017434A (ja) * 2012-07-11 2014-01-30 Disco Abrasive Syst Ltd ウエーハの加工方法
JP6013858B2 (ja) * 2012-10-01 2016-10-25 株式会社ディスコ ウェーハの加工方法
JP6026222B2 (ja) * 2012-10-23 2016-11-16 株式会社ディスコ ウエーハの加工方法
JP6456766B2 (ja) * 2015-05-08 2019-01-23 株式会社ディスコ ウエーハの加工方法
JP6634300B2 (ja) * 2016-01-28 2020-01-22 株式会社ディスコ ウエーハの加工方法
JP6980444B2 (ja) 2017-07-28 2021-12-15 浜松ホトニクス株式会社 積層型素子の製造方法
JP6981800B2 (ja) * 2017-07-28 2021-12-17 浜松ホトニクス株式会社 積層型素子の製造方法
CN109719614A (zh) * 2017-10-31 2019-05-07 上海新昇半导体科技有限公司 一种抛光设备
JP7075242B2 (ja) * 2018-02-28 2022-05-25 株式会社ディスコ 被加工物の加工方法
CN112005344B (zh) * 2018-04-27 2023-11-17 东京毅力科创株式会社 基板处理系统和基板处理方法
JP7368137B2 (ja) * 2019-08-06 2023-10-24 株式会社ディスコ ウェーハの加工方法
CN111604604A (zh) * 2020-06-28 2020-09-01 安徽富信半导体科技有限公司 一种半导体元件加工用成型设备及其使用方法
KR20220077763A (ko) * 2020-12-02 2022-06-09 에스케이하이닉스 주식회사 웨이퍼 다이싱 방법
KR102646886B1 (ko) * 2021-11-19 2024-03-12 한미반도체 주식회사 반도체 자재 연삭장치의 두께 측정방법
CN114899289A (zh) * 2022-05-09 2022-08-12 安徽三安光电有限公司 一种发光二极管、其制作方法以及发光装置
CN119525777B (zh) * 2025-01-23 2025-04-25 合肥芯谷微电子股份有限公司 一种半导体生产用防护输送载具

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4440582B2 (ja) * 2003-09-10 2010-03-24 浜松ホトニクス株式会社 半導体基板の切断方法
JP2007134454A (ja) * 2005-11-09 2007-05-31 Toshiba Corp 半導体装置の製造方法
JP2007235069A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
US8603351B2 (en) * 2007-05-25 2013-12-10 Hamamatsu Photonics K.K. Working method for cutting
JP2009166150A (ja) * 2008-01-11 2009-07-30 Denso Corp ウェハの製造方法
JP2009206162A (ja) * 2008-02-26 2009-09-10 Disco Abrasive Syst Ltd ウエーハの分割方法

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