JP5952738B2 - 平滑化剤を含む金属電気メッキのための組成物 - Google Patents

平滑化剤を含む金属電気メッキのための組成物 Download PDF

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JP5952738B2
JP5952738B2 JP2012540374A JP2012540374A JP5952738B2 JP 5952738 B2 JP5952738 B2 JP 5952738B2 JP 2012540374 A JP2012540374 A JP 2012540374A JP 2012540374 A JP2012540374 A JP 2012540374A JP 5952738 B2 JP5952738 B2 JP 5952738B2
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alkyl
hydrogen
independently
acid
copper
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JP2013512333A (ja
JP2013512333A5 (enExample
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レーガー−ゲプフェルト，コルネリア
ベネディクト レター，ロマーン
ベネディクト レター，ロマーン
マイァ，ディーター
エムネット，シャルロッテ
アルノルト，マルコ
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/028—Polyamidoamines
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02—Polyamines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Polyamides (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2012540374A 2009-11-27 2010-11-22 平滑化剤を含む金属電気メッキのための組成物 Active JP5952738B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26470509P 2009-11-27 2009-11-27
US61/264,705 2009-11-27
PCT/EP2010/067874 WO2011064154A2 (en) 2009-11-27 2010-11-22 Composition for metal electroplating comprising leveling agent

Related Child Applications (1)

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JP2016114981A Division JP6411405B2 (ja) 2009-11-27 2016-06-09 平滑化剤を含む金属電気メッキのための組成物

Publications (3)

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JP2013512333A JP2013512333A (ja) 2013-04-11
JP2013512333A5 JP2013512333A5 (enExample) 2013-12-26
JP5952738B2 true JP5952738B2 (ja) 2016-07-13

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JP2012540374A Active JP5952738B2 (ja) 2009-11-27 2010-11-22 平滑化剤を含む金属電気メッキのための組成物
JP2016114981A Active JP6411405B2 (ja) 2009-11-27 2016-06-09 平滑化剤を含む金属電気メッキのための組成物

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US (1) US9598540B2 (enExample)
EP (2) EP3848417B1 (enExample)
JP (2) JP5952738B2 (enExample)
KR (1) KR101072338B1 (enExample)
CN (1) CN102639639B (enExample)
IL (1) IL219556A (enExample)
MY (1) MY156200A (enExample)
RU (1) RU2585184C2 (enExample)
TW (1) TWI513862B (enExample)
WO (1) WO2011064154A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017002299A (ja) * 2009-11-27 2017-01-05 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平滑化剤を含む金属電気メッキのための組成物

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5981938B2 (ja) 2010-12-21 2016-08-31 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ レベリング剤を含有する金属電解めっき組成物
EP2714807B1 (en) * 2011-06-01 2019-01-02 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
EP2917265B1 (en) * 2012-11-09 2019-01-02 Basf Se Composition for metal electroplating comprising leveling agent
CN103397354B (zh) * 2013-08-08 2016-10-26 上海新阳半导体材料股份有限公司 一种用于减少硅通孔技术镀铜退火后空洞的添加剂
EP3068819B1 (en) * 2013-11-06 2019-03-27 Rohm and Haas Electronic Materials LLC Nitrogen containing polymers as levelers
KR101665617B1 (ko) * 2014-07-31 2016-10-14 주식회사 필머티리얼즈 저열팽창 철-니켈-코발트 3원계 합금의 전주도금 조성물 및 이를 이용하여 전주도금된 저열팽창 철-니켈-코발트 3원계 합금
US9783905B2 (en) * 2014-12-30 2017-10-10 Rohm and Haas Electronic Mateirals LLC Reaction products of amino acids and epoxies
KR101713686B1 (ko) * 2015-06-11 2017-03-09 서울대학교 산학협력단 실리콘 관통 비아의 무결함 필링용 평탄제 및 필링방법
US10100421B2 (en) 2015-08-06 2018-10-16 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole and bisepoxide compounds
TWI608132B (zh) 2015-08-06 2017-12-11 羅門哈斯電子材料有限公司 自含有吡啶基烷基胺及雙環氧化物之反應產物的銅電鍍覆浴液電鍍覆光阻劑限定之特徵的方法
US9932684B2 (en) 2015-08-06 2018-04-03 Rohm And Haas Electronic Materials Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of alpha amino acids and bisepoxides
US10006136B2 (en) 2015-08-06 2018-06-26 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole compounds, bisepoxides and halobenzyl compounds
CN105401181A (zh) * 2015-12-23 2016-03-16 苏州市金星工艺镀饰有限公司 一种环保无氰镀金电镀液的电镀方法
US10190228B2 (en) * 2016-03-29 2019-01-29 Rohm And Haas Electronic Materials Llc Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN115182004A (zh) 2016-12-20 2022-10-14 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
KR102483615B1 (ko) * 2018-01-24 2023-01-03 삼성전기주식회사 비스-아릴 암모늄 화합물을 포함하는 도금용 평탄제 및 이를 이용한 구리 도금 방법
KR102769982B1 (ko) * 2018-04-20 2025-02-18 바스프 에스이 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물
ES2960446T3 (es) * 2018-06-06 2024-03-04 Basf Se Poliamidoaminas alcoxiladas como agentes dispersantes
CN111108234B (zh) * 2018-08-28 2023-11-17 株式会社杰希优 硫酸铜镀液和使用了其的硫酸铜镀敷方法
WO2020263837A1 (en) * 2019-06-28 2020-12-30 Lam Research Corporation Electrodeposition of cobalt tungsten films
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
CN113430596A (zh) * 2021-07-23 2021-09-24 赛莱克斯微系统科技（北京）有限公司 一种硅通孔铜电镀液及其电镀方法
IL311715A (en) 2021-10-01 2024-05-01 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
CN114031769B (zh) * 2021-11-29 2024-03-26 广州市慧科高新材料科技有限公司 一种季铵盐类整平剂及其制备方法、含其的电镀液和电镀方法
MX2024007407A (es) * 2021-12-17 2024-07-04 Basf Se Composiciones y sus aplicaciones.
CN119522299A (zh) 2022-07-07 2025-02-25 巴斯夫欧洲公司 包含聚氨基酰胺型化合物的组合物用于铜纳米孪晶电沉积的用途
TW202432898A (zh) 2022-12-19 2024-08-16 德商巴斯夫歐洲公司 用於電沉積奈米雙晶銅之組成物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1218394A (en) 1967-03-08 1971-01-06 Toho Kagaku Kogyo Kabushiki Ka Process for producing water-soluble thermosetting polymer
NL7004910A (enExample) * 1969-05-03 1970-11-05
DE2733973A1 (de) 1977-07-28 1979-02-15 Basf Ag Wasserloesliche, vernetzte stickstoffhaltige kondensationsprodukte
DE3111713A1 (de) * 1981-03-25 1982-10-07 Basf Ag, 6700 Ludwigshafen Wasserloesliche benzylierte polyamidoamine
US5917811A (en) 1996-05-22 1999-06-29 Qualcomm Incorporated Method and apparatus for measurement directed hard handoff in a CDMA system
DE19625991A1 (de) 1996-06-28 1998-01-02 Philips Patentverwaltung Bildschirm mit haftungsvermittelnder Silikatschicht
US6004681A (en) 1996-08-02 1999-12-21 The Ohio State University Research Foundation Light-emitting devices containing network electrode polymers in electron blocking layer
DE19643091B4 (de) * 1996-10-18 2006-11-23 Raschig Gmbh Verwendung von wasserlöslichen Reaktionsprodukten aus Polyamidoaminen, Polyaminen und Epihalogenhydrin in galvanischen Bädern sowie Verfahren zu ihrer Herstellung und galvanische Bäder, die diese enthalten
US6024857A (en) 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
DE19758121C2 (de) 1997-12-17 2000-04-06 Atotech Deutschland Gmbh Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten
FR2788973B1 (fr) 1999-02-03 2002-04-05 Oreal Composition cosmetique comprenant un tensioactif anionique, un tensioactif amphotere, une huile de type polyolefine, un polymere cationique et un sel ou un alcool hydrosoluble, utilisation et procede
JP2001073182A (ja) 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
JP2001279228A (ja) * 2000-03-31 2001-10-10 Ajinomoto Co Inc 新規なキレート剤
FR2814363B1 (fr) 2000-09-28 2004-05-07 Oreal Composition de lavage contenant des alkylamidoethersulfates, des tensiocatifs anioniques et des polymeres cationiques
US6610192B1 (en) 2000-11-02 2003-08-26 Shipley Company, L.L.C. Copper electroplating
DE10160993A1 (de) 2001-12-12 2003-06-18 Basf Ag Stickstoffhaltige Polymere umfassende Reinigungsmittelzusammensetzungen
US7316772B2 (en) 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
DE10243361A1 (de) 2002-09-18 2004-04-01 Basf Ag Alkoxylatgemische und diese enthaltende Waschmittel
TW200401848A (en) 2002-06-03 2004-02-01 Shipley Co Llc Leveler compounds
TW200613586A (en) 2004-07-22 2006-05-01 Rohm & Haas Elect Mat Leveler compounds
EP1902086A1 (en) * 2005-06-30 2008-03-26 Akzo Nobel N.V. Chemical process
JP2007107074A (ja) * 2005-10-17 2007-04-26 Okuno Chem Ind Co Ltd 酸性電気銅めっき液及び電気銅めっき方法
JP5503111B2 (ja) * 2007-04-03 2014-05-28 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 金属メッキ組成物および方法
JP5558675B2 (ja) 2007-04-03 2014-07-23 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 金属メッキ組成物
EP2199315B1 (en) 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
MY156200A (en) * 2009-11-27 2016-01-29 Basf Se Composition for metal electroplating comprising leveling agent

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017002299A (ja) * 2009-11-27 2017-01-05 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 平滑化剤を含む金属電気メッキのための組成物

Also Published As

Publication number Publication date
US9598540B2 (en) 2017-03-21
MY156200A (en) 2016-01-29
IL219556A0 (en) 2012-06-28
TWI513862B (zh) 2015-12-21
RU2012126604A (ru) 2014-01-10
TW201126025A (en) 2011-08-01
IL219556A (en) 2016-12-29
RU2585184C2 (ru) 2016-05-27
WO2011064154A2 (en) 2011-06-03
US20120292193A1 (en) 2012-11-22
JP6411405B2 (ja) 2018-10-24
EP2504396A2 (en) 2012-10-03
KR101072338B1 (ko) 2011-10-11
JP2013512333A (ja) 2013-04-11
EP3848417A1 (en) 2021-07-14
CN102639639A (zh) 2012-08-15
CN102639639B (zh) 2015-06-03
WO2011064154A3 (en) 2011-09-22
EP2504396B1 (en) 2021-02-24
EP3848417B1 (en) 2025-01-08
JP2017002299A (ja) 2017-01-05
KR20110063810A (ko) 2011-06-14

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