IL219556A - A preparation containing a source of copper ions and at least one polyaminoamide additive and used for metallic coating by electricity - Google Patents

A preparation containing a source of copper ions and at least one polyaminoamide additive and used for metallic coating by electricity

Info

Publication number
IL219556A
IL219556A IL219556A IL21955612A IL219556A IL 219556 A IL219556 A IL 219556A IL 219556 A IL219556 A IL 219556A IL 21955612 A IL21955612 A IL 21955612A IL 219556 A IL219556 A IL 219556A
Authority
IL
Israel
Prior art keywords
polyaminoamide
additive
composition
source
copper ions
Prior art date
Application number
IL219556A
Other languages
English (en)
Hebrew (he)
Other versions
IL219556A0 (en
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL219556A0 publication Critical patent/IL219556A0/en
Publication of IL219556A publication Critical patent/IL219556A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02Polyamines
    • C08G73/028Polyamidoamines
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02Polyamines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Polyamides (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)
IL219556A 2009-11-27 2012-05-03 A preparation containing a source of copper ions and at least one polyaminoamide additive and used for metallic coating by electricity IL219556A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26470509P 2009-11-27 2009-11-27
PCT/EP2010/067874 WO2011064154A2 (en) 2009-11-27 2010-11-22 Composition for metal electroplating comprising leveling agent

Publications (2)

Publication Number Publication Date
IL219556A0 IL219556A0 (en) 2012-06-28
IL219556A true IL219556A (en) 2016-12-29

Family

ID=43986721

Family Applications (1)

Application Number Title Priority Date Filing Date
IL219556A IL219556A (en) 2009-11-27 2012-05-03 A preparation containing a source of copper ions and at least one polyaminoamide additive and used for metallic coating by electricity

Country Status (10)

Country Link
US (1) US9598540B2 (enExample)
EP (2) EP3848417B1 (enExample)
JP (2) JP5952738B2 (enExample)
KR (1) KR101072338B1 (enExample)
CN (1) CN102639639B (enExample)
IL (1) IL219556A (enExample)
MY (1) MY156200A (enExample)
RU (1) RU2585184C2 (enExample)
TW (1) TWI513862B (enExample)
WO (1) WO2011064154A2 (enExample)

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JP5952738B2 (ja) * 2009-11-27 2016-07-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 平滑化剤を含む金属電気メッキのための組成物
WO2012085811A1 (en) 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
JP6062425B2 (ja) * 2011-06-01 2017-01-18 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se シリコン貫通ビアおよび相互接続フィーチャーのボトムアップ充填のための添加剤を含む金属電気めっきのための組成物
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
RU2015121797A (ru) * 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
CN103397354B (zh) * 2013-08-08 2016-10-26 上海新阳半导体材料股份有限公司 一种用于减少硅通孔技术镀铜退火后空洞的添加剂
US10196751B2 (en) 2013-11-06 2019-02-05 Rohm And Haas Electronic Materials Llc Nitrogen containing polymers as levelers
KR101665617B1 (ko) * 2014-07-31 2016-10-14 주식회사 필머티리얼즈 저열팽창 철-니켈-코발트 3원계 합금의 전주도금 조성물 및 이를 이용하여 전주도금된 저열팽창 철-니켈-코발트 3원계 합금
US9783905B2 (en) * 2014-12-30 2017-10-10 Rohm and Haas Electronic Mateirals LLC Reaction products of amino acids and epoxies
KR101713686B1 (ko) * 2015-06-11 2017-03-09 서울대학교 산학협력단 실리콘 관통 비아의 무결함 필링용 평탄제 및 필링방법
TWI608132B (zh) 2015-08-06 2017-12-11 羅門哈斯電子材料有限公司 自含有吡啶基烷基胺及雙環氧化物之反應產物的銅電鍍覆浴液電鍍覆光阻劑限定之特徵的方法
US9932684B2 (en) 2015-08-06 2018-04-03 Rohm And Haas Electronic Materials Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of alpha amino acids and bisepoxides
US10100421B2 (en) 2015-08-06 2018-10-16 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole and bisepoxide compounds
US10006136B2 (en) 2015-08-06 2018-06-26 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole compounds, bisepoxides and halobenzyl compounds
CN105401181A (zh) * 2015-12-23 2016-03-16 苏州市金星工艺镀饰有限公司 一种环保无氰镀金电镀液的电镀方法
US10190228B2 (en) * 2016-03-29 2019-01-29 Rohm And Haas Electronic Materials Llc Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
KR102457310B1 (ko) 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
KR102641595B1 (ko) * 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
KR102483615B1 (ko) * 2018-01-24 2023-01-03 삼성전기주식회사 비스-아릴 암모늄 화합물을 포함하는 도금용 평탄제 및 이를 이용한 구리 도금 방법
US11242606B2 (en) * 2018-04-20 2022-02-08 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
CN112218907B (zh) * 2018-06-06 2024-02-13 巴斯夫欧洲公司 作为分散剂的烷氧基化聚酰胺基胺
JP7208913B2 (ja) * 2018-08-28 2023-01-19 株式会社Jcu 硫酸銅めっき液およびこれを用いた硫酸銅めっき方法
CN114008251B (zh) * 2019-06-28 2025-03-07 朗姆研究公司 钴钨膜的电沉积
CN110284162B (zh) * 2019-07-22 2020-06-30 广州三孚新材料科技股份有限公司 一种光伏汇流焊带无氰碱性镀铜液及其制备方法
WO2021058334A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034697A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US12134834B2 (en) 2020-04-03 2024-11-05 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20230037553A (ko) 2020-07-13 2023-03-16 바스프 에스이 코발트 시드 상의 구리 전기도금을 위한 조성물
CN113430596A (zh) * 2021-07-23 2021-09-24 赛莱克斯微系统科技(北京)有限公司 一种硅通孔铜电镀液及其电镀方法
IL311715A (en) 2021-10-01 2024-05-01 Basf Se The composition for electrical deposition of copper containing a polyaminoamide compensator
CN114031769B (zh) * 2021-11-29 2024-03-26 广州市慧科高新材料科技有限公司 一种季铵盐类整平剂及其制备方法、含其的电镀液和电镀方法
MX2024007407A (es) * 2021-12-17 2024-07-04 Basf Se Composiciones y sus aplicaciones.
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
WO2026037751A1 (en) 2024-08-16 2026-02-19 Basf Se Composition for metal electroplating comprising an additive for defect-free filling of features on electronic substrates

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JP5952738B2 (ja) * 2009-11-27 2016-07-13 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 平滑化剤を含む金属電気メッキのための組成物

Also Published As

Publication number Publication date
US20120292193A1 (en) 2012-11-22
RU2585184C2 (ru) 2016-05-27
MY156200A (en) 2016-01-29
TWI513862B (zh) 2015-12-21
RU2012126604A (ru) 2014-01-10
KR101072338B1 (ko) 2011-10-11
CN102639639A (zh) 2012-08-15
WO2011064154A3 (en) 2011-09-22
JP5952738B2 (ja) 2016-07-13
JP2017002299A (ja) 2017-01-05
WO2011064154A2 (en) 2011-06-03
CN102639639B (zh) 2015-06-03
EP2504396A2 (en) 2012-10-03
US9598540B2 (en) 2017-03-21
EP2504396B1 (en) 2021-02-24
IL219556A0 (en) 2012-06-28
EP3848417A1 (en) 2021-07-14
TW201126025A (en) 2011-08-01
JP2013512333A (ja) 2013-04-11
JP6411405B2 (ja) 2018-10-24
EP3848417B1 (en) 2025-01-08
KR20110063810A (ko) 2011-06-14

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