JP5948776B2 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
JP5948776B2
JP5948776B2 JP2011210354A JP2011210354A JP5948776B2 JP 5948776 B2 JP5948776 B2 JP 5948776B2 JP 2011210354 A JP2011210354 A JP 2011210354A JP 2011210354 A JP2011210354 A JP 2011210354A JP 5948776 B2 JP5948776 B2 JP 5948776B2
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JP
Japan
Prior art keywords
layer
compound semiconductor
light
light emitting
light guide
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011210354A
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English (en)
Japanese (ja)
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JP2013074001A5 (enExample
JP2013074001A (ja
Inventor
大 倉本
大 倉本
倫太郎 幸田
倫太郎 幸田
秀輝 渡邊
秀輝 渡邊
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011210354A priority Critical patent/JP5948776B2/ja
Priority to TW101130546A priority patent/TW201314945A/zh
Priority to CN201280045924.2A priority patent/CN103828147A/zh
Priority to US14/345,289 priority patent/US9025631B2/en
Priority to PCT/JP2012/072448 priority patent/WO2013047107A1/ja
Publication of JP2013074001A publication Critical patent/JP2013074001A/ja
Publication of JP2013074001A5 publication Critical patent/JP2013074001A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2011210354A 2011-09-27 2011-09-27 発光素子及びその製造方法 Expired - Fee Related JP5948776B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011210354A JP5948776B2 (ja) 2011-09-27 2011-09-27 発光素子及びその製造方法
TW101130546A TW201314945A (zh) 2011-09-27 2012-08-22 發光元件及其製造方法
CN201280045924.2A CN103828147A (zh) 2011-09-27 2012-09-04 发光器件及其制造方法
US14/345,289 US9025631B2 (en) 2011-09-27 2012-09-04 Light-emitting device and method of manufacturing the same
PCT/JP2012/072448 WO2013047107A1 (ja) 2011-09-27 2012-09-04 発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011210354A JP5948776B2 (ja) 2011-09-27 2011-09-27 発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2013074001A JP2013074001A (ja) 2013-04-22
JP2013074001A5 JP2013074001A5 (enExample) 2014-10-30
JP5948776B2 true JP5948776B2 (ja) 2016-07-06

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JP2011210354A Expired - Fee Related JP5948776B2 (ja) 2011-09-27 2011-09-27 発光素子及びその製造方法

Country Status (5)

Country Link
US (1) US9025631B2 (enExample)
JP (1) JP5948776B2 (enExample)
CN (1) CN103828147A (enExample)
TW (1) TW201314945A (enExample)
WO (1) WO2013047107A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220404A (ja) 2013-05-09 2014-11-20 ソニー株式会社 半導体レーザ装置組立体
JP5858246B2 (ja) * 2013-07-23 2016-02-10 ウシオ電機株式会社 窒化物半導体発光素子及びその製造方法
EP3073587B1 (en) * 2013-11-19 2020-08-12 Sony Corporation Semiconductor laser element
TWI580072B (zh) * 2015-05-29 2017-04-21 隆達電子股份有限公司 發光元件之電極結構及其製作方法
PL438136A1 (pl) * 2021-06-13 2022-12-19 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Epitaksjalna struktura laserowa i sposób wytwarzania epitaksjalnej struktury laserowej
CN114400496A (zh) * 2021-12-22 2022-04-26 西安立芯光电科技有限公司 半导体激光器阵列巴条制作方法及半导体激光器阵列巴条

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2545719B2 (ja) 1991-03-15 1996-10-23 東京工業大学長 積層型光増幅器
JPH09129974A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 半導体レーザ素子
JP3886030B2 (ja) 1998-10-07 2007-02-28 シャープ株式会社 半導体レーザ素子
JP4155664B2 (ja) * 1999-04-28 2008-09-24 日本オプネクスト株式会社 半導体レーザ装置
JP2001230494A (ja) * 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体レーザ素子及びその製造方法
JP2003273467A (ja) * 2002-03-15 2003-09-26 Toshiba Corp 半導体レーザおよびその製造方法
JP2010267731A (ja) * 2009-05-13 2010-11-25 Panasonic Corp 窒化物半導体レーザ装置

Also Published As

Publication number Publication date
US20150043603A1 (en) 2015-02-12
WO2013047107A1 (ja) 2013-04-04
JP2013074001A (ja) 2013-04-22
US9025631B2 (en) 2015-05-05
TW201314945A (zh) 2013-04-01
CN103828147A (zh) 2014-05-28

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