JP5930494B2 - モノリシック集積されたアンテナ及び受信機回路 - Google Patents
モノリシック集積されたアンテナ及び受信機回路 Download PDFInfo
- Publication number
- JP5930494B2 JP5930494B2 JP2014513196A JP2014513196A JP5930494B2 JP 5930494 B2 JP5930494 B2 JP 5930494B2 JP 2014513196 A JP2014513196 A JP 2014513196A JP 2014513196 A JP2014513196 A JP 2014513196A JP 5930494 B2 JP5930494 B2 JP 5930494B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- fet2
- fet1
- antenna structure
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 claims description 53
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 claims description 44
- 230000005670 electromagnetic radiation Effects 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
・THz放射は、非電離放射であるために生物医学分野において安全であるとされている。
・所定の分子回転励起、振電励起、又は振動励起は、テラヘルツ周波数範囲において共振周波数を有する。
・THz放射線は、将来の光子及び電子部品のための重要な役割を果たす、特にナノ構造における電荷キャリア動力学について、必要不可欠な情報を提供する。
・THz放射線は、光周波数よりも散乱の程度が低いため、例えば多くの粉塵が形成されている工業環境における使用に特に適している。
・通信システムに関しては、周波数が高いほど、より広い伝送帯域が可能となる。
・検出器の最適動作点を決定する。
・検出器の特性の変化を検出・監視する。
・大面積検出器アレイを校正する。
2、3 足点
4 接地板
5 出力端子
20 仮想的な接地
21 バイアスティー
22 校正源
C1、C2 キャパシタンス
FET1、FET2 電界効果トランジスタ
TL1、TL2 伝送線
D ドレイン
G ゲート
S ソース
Claims (15)
- 第1電極(D)、第2電極(S)、制御電極(G)、及び第1電極(D)と第2電極(S)との間のチャネルを有する少なくとも1つのトランジスタ(FET1、FET2)と、アンテナ構造(1)とを備えるTHz周波数範囲の電磁放射線の検出装置において、
トランジスタ(FET1、FET2)の第1電極(D)は、アンテナ構造(1)が受信したTHz周波数範囲の電磁信号が、トランジスタ(FET1、FET2)の第1電極(D)と第2電極(S)との間のチャネルに供給されるように、アンテナ構造(1)に導電接続されているとともに、
制御電極(G)は、外部キャパシタンス(C1、C2)を介して第2電極(S)に接続され、並びに/又は、
制御電極(G)及び第2電極(S)は、制御電極(G)と第2電極(S)との間で交流電圧の降下が生じないように、固有キャパシタンスを有するか、
あるいは、
トランジスタ(FET1、FET2)の第2電極(S)は、アンテナ構造(1)が受信したTHz周波数範囲の電磁信号が、トランジスタ(FET1、FET2)の第1電極(D)と第2電極(S)との間のチャネルに供給されるように、アンテナ構造(1)に導電接続されているとともに、
制御電極(G)は、外部キャパシタンス(C1、C2)を介して第1電極(D)に接続され、並びに/又は、
制御電極(G)及び第1電極(D)は、制御電極(G)と第1電極(D)との間で交流電圧の降下が生じないように、固有キャパシタンスを有する、
ことを特徴とする装置。 - トランジスタは、第1電極としてのドレイン(D)、第2電極としてのソース(S)、制御電極としてのゲート(G)及び第1電極(D)と第2電極(S)との間のチャネルとしてのソース−ドレイン間チャネルを有する電界トランジスタ(FET1、FET2)である請求項1に記載の装置。
- アンテナ構造(1)は、第1電極(D)又は第2電極(S)に導電接続された端子(2、3)を有する請求項1又は2に記載の装置。
- 2つのトランジスタ(FET1、FET2)を有する請求項1〜3のいずれか1項に記載の装置。
- トランジスタ(FET1、FET2)が並列接続され、それらの2つのトランジスタ(FET1、FET2)のそれぞれの第1電極(D)が互いに導電接続された、又は、それらの2つのトランジスタ(FET1、FET2)のそれぞれの第2電極(S)が互いに導電接続された請求項4に記載の装置。
- アンテナ構造(1)が2つの端子(2、3)を有し、それらの端子(2、3)は、トランジスタ(FET1、FET2)が差動的に動作するように、トランジスタ(FET1、FET2)の第1電極(D)又は第2電極(S)にそれぞれ接続された請求項4又は5に記載の装置。
- トランジスタ(FET1、FET2)の第1電極(D)又は第2電極(S)は、アンテナ構造(1)が受信したTHz周波数範囲の電磁信号がトランジスタ(FET1、FET2)の第1電極(D)と第2電極(S)との間のチャネルに供給されるようにアンテナ構造(1’)に導電接続されるとともに、更なる信号の供給及び/又は読み取りのための更なる端子(20)を介して、トランジスタ(FET1、FET2)の出力信号(5)が取り出され、及び/又は、更なる信号がトランジスタ(FET1、FET2)に供給されるように、更なる端子(20)に導電接続されている請求項1〜6のいずれか1項に記載の装置。
- 装置が電磁校正信号用の校正源(22)を有するとともに、端子(20)が校正源(22)に接続されている請求項7に記載の装置。
- 更なる端子(20)がバイアスティー(21)に接続され、そのバイアスティー(21)は、電界効果トランジスタ(FET1、FET2)の出力信号を取り出す出力端子(5)を提供するとともに、バイアスティ(21)が、電磁校正信号用の校正源(22)に接続されている請求項7又は8に記載の装置。
- 更なる端子が、アンテナ構造(1’)の対称点、又はアンテナ構造(1’)の対称軸上の点(20)に接続されている請求項7〜9のいずれか1項に記載の装置。
- アンテナ構造(1’)とトランジスタ(FET1、FET2)との間に配置された接地板(4)を有する請求項1〜10のいずれか1項に記載の装置。
- 制御電極と第1電極(D)又は第2電極(S)との間のキャパシタンスが、0.1fFよりも大きい請求項1〜11のいずれか1項に記載の装置。
- トランジスタ(FET1、FET2)の第1電極(D)又は第2電極(S)は、好ましくは導波管であるインピーダンス整合素子(TL1、TL2)を介して、アンテナ構造(1)に導電接続されている請求項1〜12のいずれか1項に記載の装置。
- 請求項1〜13のいずれか1項に記載の装置を少なくとも1つ備えたTHzヘテロダイン受信機。
- 請求項1〜14のいずれか1項に記載の装置を少なくとも1つ備えた撮像システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011076840.8 | 2011-05-31 | ||
DE102011076840A DE102011076840B4 (de) | 2011-05-31 | 2011-05-31 | Monolithisch integrierter Antennen- und Empfängerschaltkreis und THz-Heterodynempfänger und bildgebendes System, diesen aufweisend, und Verwendung dieser zur Erfassung elektromagnetischer Strahlung im THz-Frequenzbereich |
PCT/EP2012/060304 WO2012164040A1 (de) | 2011-05-31 | 2012-05-31 | Monolithisch integrierter antennen- und empfängerschaltkreis |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014517621A JP2014517621A (ja) | 2014-07-17 |
JP5930494B2 true JP5930494B2 (ja) | 2016-06-08 |
Family
ID=46210239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014513196A Expired - Fee Related JP5930494B2 (ja) | 2011-05-31 | 2012-05-31 | モノリシック集積されたアンテナ及び受信機回路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9508764B2 (ja) |
EP (1) | EP2715803A1 (ja) |
JP (1) | JP5930494B2 (ja) |
DE (1) | DE102011076840B4 (ja) |
WO (1) | WO2012164040A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2995449A1 (fr) * | 2012-09-12 | 2014-03-14 | St Microelectronics Sa | Imageur terahertz |
CN104091851B (zh) * | 2014-06-11 | 2015-07-22 | 南京大学 | 一种基于环栅mosfet结构的太赫兹传感器 |
CN104091837B (zh) * | 2014-06-13 | 2016-09-28 | 南京大学 | 一种基于光学天线的太赫兹探测器 |
US9385770B2 (en) | 2014-09-25 | 2016-07-05 | Lothar Benedikt Moeller | Arrayed antenna for coherent detection of millimeterwave and terahertz radiation |
WO2016117724A1 (ko) * | 2015-01-23 | 2016-07-28 | 울산과학기술원 | 전계효과트랜지스터를 이용한 테라헤르츠 검출기 |
FR3036532B1 (fr) | 2015-05-21 | 2018-07-27 | Richard Al Hadi | Procede et systeme de generation et de detection d'ondes electromagnetiques centimetriques, millimetriques ou submillimetriques, notamment terahertz |
US10396000B2 (en) * | 2015-07-01 | 2019-08-27 | International Business Machines Corporation | Test structure macro for monitoring dimensions of deep trench isolation regions and local trench isolation regions |
GB2545027A (en) * | 2015-12-04 | 2017-06-07 | Canon Kk | Receiver with automatic gain control by a direct current closed loop |
WO2017115896A1 (ko) * | 2015-12-31 | 2017-07-06 | 울산과학기술원 | 게이트 메탈을 안테나로 활용한 링 형의 테라헤르쯔파 검출용 전계효과트랜지스터 |
US10224363B2 (en) * | 2016-07-28 | 2019-03-05 | Neteera Technologies Ltd. | Terahertz CMOS sensor |
GB2554739A (en) * | 2016-10-07 | 2018-04-11 | Canon Kk | Signal detector comprising a plasma FET with impedance matching |
DE102017103687B3 (de) | 2017-02-23 | 2018-04-26 | Forschungsverbund Berlin E.V. | Strahlungsdetektor und Verfahren zu dessen Herstellung |
GB2560983B (en) * | 2017-03-31 | 2019-08-07 | Canon Kk | Detector for detecting a wide band signal |
JP6918591B2 (ja) * | 2017-06-16 | 2021-08-11 | 株式会社豊田中央研究所 | 電磁波検出器およびその製造方法 |
CN109855732B (zh) * | 2018-11-30 | 2021-03-16 | 天津大学 | 基于周期性光栅化漏极金属栅mosfet太赫兹探测器 |
CN109632094B (zh) * | 2018-11-30 | 2021-02-05 | 天津大学 | 基于周期性光栅化栅漏极mosfet太赫兹探测器 |
US20230352853A1 (en) * | 2020-09-29 | 2023-11-02 | Rensselaer Polytechnic Institute | Line-of-sight detector and communication system in sub-thz and thz ranges |
CN112531071B (zh) * | 2020-12-18 | 2022-04-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于薄势垒材料的太赫兹场效应探测器及其设计方法 |
WO2023108085A1 (en) * | 2021-12-08 | 2023-06-15 | The Regents Of The University Of California | A highly power efficient p-i-n diode-based thz radiating array |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4647848A (en) | 1984-03-05 | 1987-03-03 | Tektronix, Inc. | Broadband RF power detector using FET |
JPH0927736A (ja) * | 1995-07-13 | 1997-01-28 | Japan Radio Co Ltd | Fetスイッチ |
EP1184671B1 (en) * | 2000-08-24 | 2006-12-06 | Sony Deutschland GmbH | Power detector using FET transistor |
KR20010110389A (ko) | 2001-11-20 | 2001-12-13 | 이상건 | 전계효과 트랜지스터를 적용한 주파수변환기를 이용한마이크로웨이브 감지장치 |
JP2003248054A (ja) * | 2002-02-27 | 2003-09-05 | Hitachi Ltd | モノパルスレーダ装置 |
US7638817B2 (en) | 2004-04-26 | 2009-12-29 | Sensor Electronic Technology, Inc. | Device and method for managing radiation |
DE102007062562B4 (de) * | 2007-12-22 | 2009-10-01 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Monolithisch integrierter Antennen- und Empfängerschaltkreis für die Erfassung von Terahertz-Wellen |
DE102008047103B4 (de) | 2008-09-12 | 2011-03-24 | Cnrs Centre National De La Recherche Scientifique | Vorrichtung und Verfahren zur dreidimensionalen Bildgebung mit THz-Strahlung |
DE102009029447A1 (de) * | 2009-09-14 | 2011-03-24 | Bergische Universität Wuppertal | Vorrichtung und Verfahren zur Erfassung von elektromagnetischer THz-Strahlung |
DE102010028987A1 (de) * | 2010-05-14 | 2011-11-17 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Subharmonischer Mischer |
-
2011
- 2011-05-31 DE DE102011076840A patent/DE102011076840B4/de not_active Expired - Fee Related
-
2012
- 2012-05-31 WO PCT/EP2012/060304 patent/WO2012164040A1/de active Application Filing
- 2012-05-31 US US14/122,897 patent/US9508764B2/en not_active Expired - Fee Related
- 2012-05-31 EP EP12726084.2A patent/EP2715803A1/de not_active Ceased
- 2012-05-31 JP JP2014513196A patent/JP5930494B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20140091376A1 (en) | 2014-04-03 |
DE102011076840A1 (de) | 2012-12-06 |
EP2715803A1 (de) | 2014-04-09 |
WO2012164040A1 (de) | 2012-12-06 |
DE102011076840B4 (de) | 2013-08-01 |
JP2014517621A (ja) | 2014-07-17 |
US9508764B2 (en) | 2016-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5930494B2 (ja) | モノリシック集積されたアンテナ及び受信機回路 | |
CA2710450C (en) | Monolithically integrated antenna and receiver circuit for the detection of terahertz waves | |
Al Hadi et al. | A terahertz detector array in a SiGe HBT technology | |
JP5422834B2 (ja) | マイクロ波・ミリ波センサ装置 | |
JP5761585B2 (ja) | パルスレーダ装置 | |
JP6914967B2 (ja) | 放射検出器及びその製造方法 | |
US9614116B2 (en) | Impedance adaptation in a THz detector | |
Liu et al. | A Multichannel THz Detector Using Integrated Bow‐Tie Antennas | |
JP2006279776A (ja) | 電波送受信モジュールおよび、この電波送受信モジュールを用いたイメージングセンサ | |
Ferreras et al. | Broadband sensing around 1 THz via a novel biquad-antenna-coupled low-NEP detector in CMOS | |
Andree et al. | A broadband dual-polarized terahertz direct detector in a 0.13-μm SiGe HBT technology | |
Xu et al. | Design of miniaturised on‐chip slot antenna for THz detector in CMOS | |
Marczewski et al. | THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy | |
CN103217587A (zh) | 检测器件、检测器和使用它们的成像装置 | |
US20080251870A1 (en) | Detector for detecting electromagnetic waves | |
Pleteršek et al. | A self-mixing NMOS channel-detector optimized for mm-wave and THZ signals | |
JP2010219443A (ja) | テラヘルツ受信素子 | |
US8067985B2 (en) | Resonant operating mode for a transistor | |
Kume et al. | 1.0 THz detection by InAs quantum-well MOSHEMT using GSG THz probe | |
CN110657887B (zh) | 一种基于交叉耦合结构的太赫兹探测器 | |
KR102505015B1 (ko) | 테라헤르츠파 검출을 위한 성능인자가 독립적인 일체형 전계효과 트랜지스터-안테나 융합소자 | |
Dancila et al. | Wide band on-chip slot antenna with back-side etched trench for W-band sensing applications | |
Malmqvist et al. | Design and test results of a wideband SiGe detector and on-chip slot antenna for W-band sensing applications | |
Reynaert et al. | THz Using CMOS Approach | |
Hajizadegan et al. | A self-powered harmonic sensor based on simple graphene circuit and hybrid-fed antenna |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140416 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150409 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151117 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160223 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160405 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160422 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5930494 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |