JP5928208B2 - 放射線検出器 - Google Patents

放射線検出器 Download PDF

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Publication number
JP5928208B2
JP5928208B2 JP2012156183A JP2012156183A JP5928208B2 JP 5928208 B2 JP5928208 B2 JP 5928208B2 JP 2012156183 A JP2012156183 A JP 2012156183A JP 2012156183 A JP2012156183 A JP 2012156183A JP 5928208 B2 JP5928208 B2 JP 5928208B2
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JP
Japan
Prior art keywords
region
scintillator layer
concentration
thickness
activator
Prior art date
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Expired - Fee Related
Application number
JP2012156183A
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English (en)
Japanese (ja)
Other versions
JP2014020781A5 (OSRAM
JP2014020781A (ja
Inventor
川西　光宏
光宏 川西
育実 草山
育実 草山
五十嵐　崇裕
崇裕 五十嵐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012156183A priority Critical patent/JP5928208B2/ja
Priority to US13/919,603 priority patent/US8962370B2/en
Priority to CN201310291536.9A priority patent/CN103543461B/zh
Publication of JP2014020781A publication Critical patent/JP2014020781A/ja
Publication of JP2014020781A5 publication Critical patent/JP2014020781A5/ja
Application granted granted Critical
Publication of JP5928208B2 publication Critical patent/JP5928208B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
JP2012156183A 2012-07-12 2012-07-12 放射線検出器 Expired - Fee Related JP5928208B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012156183A JP5928208B2 (ja) 2012-07-12 2012-07-12 放射線検出器
US13/919,603 US8962370B2 (en) 2012-07-12 2013-06-17 Radiation detector and method of manufacturing the same
CN201310291536.9A CN103543461B (zh) 2012-07-12 2013-07-11 辐射检测器及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012156183A JP5928208B2 (ja) 2012-07-12 2012-07-12 放射線検出器

Publications (3)

Publication Number Publication Date
JP2014020781A JP2014020781A (ja) 2014-02-03
JP2014020781A5 JP2014020781A5 (OSRAM) 2015-04-09
JP5928208B2 true JP5928208B2 (ja) 2016-06-01

Family

ID=49913275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012156183A Expired - Fee Related JP5928208B2 (ja) 2012-07-12 2012-07-12 放射線検出器

Country Status (3)

Country Link
US (1) US8962370B2 (OSRAM)
JP (1) JP5928208B2 (OSRAM)
CN (1) CN103543461B (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6221352B2 (ja) * 2013-05-30 2017-11-01 コニカミノルタ株式会社 放射線画像変換パネル、および放射線画像検出器
US9496061B2 (en) * 2013-06-10 2016-11-15 Konica Minolta, Inc. Radiographic image conversion panel
EP3023812B1 (en) * 2013-07-16 2017-09-20 Toshiba Electron Tubes & Devices Co., Ltd. Radiation detector, scintillator panel, and methods for manufacturing radiation detector and scintillator panel
TWI550836B (zh) * 2014-05-06 2016-09-21 友達光電股份有限公司 光偵測器及其製造方法
US10705228B2 (en) 2014-06-18 2020-07-07 Oregon State University Photo sensor for use as a radiation detector and power supply and method for making and using the device
JP6671839B2 (ja) * 2014-10-07 2020-03-25 キヤノン株式会社 放射線撮像装置及び撮像システム
US10422888B1 (en) 2015-07-17 2019-09-24 Triad National Security, Llc Scintillation detectors
JP6770286B2 (ja) * 2015-10-20 2020-10-14 キヤノン電子管デバイス株式会社 シンチレータパネルおよびその製造方法
JP6591256B2 (ja) * 2015-10-20 2019-10-16 キヤノン電子管デバイス株式会社 放射線検出器およびその製造方法
JP6433560B1 (ja) * 2017-09-27 2018-12-05 浜松ホトニクス株式会社 シンチレータパネル及び放射線検出器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003050298A (ja) * 2001-08-06 2003-02-21 Fuji Photo Film Co Ltd 放射線像変換パネルおよびその製造方法
WO2006016505A1 (en) * 2004-08-10 2006-02-16 Canon Kabushiki Kaisha Radiation detecting apparatus, scintillator panel, their manufacturing method and radiation detecting system
JP5089195B2 (ja) * 2006-03-02 2012-12-05 キヤノン株式会社 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法
JP4920994B2 (ja) * 2006-03-02 2012-04-18 キヤノン株式会社 シンチレータパネル、放射線検出装置及び放射線検出システム
JP2008224357A (ja) * 2007-03-12 2008-09-25 Konica Minolta Medical & Graphic Inc シンチレータプレート
JP5152179B2 (ja) * 2007-04-05 2013-02-27 コニカミノルタエムジー株式会社 シンチレータプレート
JP2010014469A (ja) * 2008-07-02 2010-01-21 Fujifilm Corp 放射線像変換パネルの製造方法
WO2010061727A1 (ja) * 2008-11-28 2010-06-03 コニカミノルタエムジー株式会社 シンチレータパネル
US8476605B2 (en) * 2009-06-26 2013-07-02 Konica Minolta Medical & Graphic, Inc. Scintillator panel, method of producing scintillator panel, radiation image detector and method of producing radiation image detector
JP5791281B2 (ja) * 2010-02-18 2015-10-07 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP5661426B2 (ja) * 2010-11-01 2015-01-28 株式会社東芝 放射線検出器及びその製造方法
JP5422581B2 (ja) * 2011-01-31 2014-02-19 富士フイルム株式会社 放射線画像検出装置及びその製造方法
JP2013152160A (ja) * 2012-01-25 2013-08-08 Canon Inc 放射線撮像装置及び放射線撮像システム

Also Published As

Publication number Publication date
CN103543461B (zh) 2017-08-22
US20140015082A1 (en) 2014-01-16
CN103543461A (zh) 2014-01-29
US8962370B2 (en) 2015-02-24
JP2014020781A (ja) 2014-02-03

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