JP5928026B2 - センサーチップおよびその製造方法並びに検出装置 - Google Patents

センサーチップおよびその製造方法並びに検出装置 Download PDF

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JP5928026B2
JP5928026B2 JP2012058326A JP2012058326A JP5928026B2 JP 5928026 B2 JP5928026 B2 JP 5928026B2 JP 2012058326 A JP2012058326 A JP 2012058326A JP 2012058326 A JP2012058326 A JP 2012058326A JP 5928026 B2 JP5928026 B2 JP 5928026B2
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sensor chip
light
diamond
substrate
metal nanoparticles
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JP2013190376A (ja
JP2013190376A5 (enExample
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藤井　永一
永一 藤井
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Seiko Epson Corp
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JP2012058326A 2012-03-15 2012-03-15 センサーチップおよびその製造方法並びに検出装置 Expired - Fee Related JP5928026B2 (ja)

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JP2013190376A JP2013190376A (ja) 2013-09-26
JP2013190376A5 JP2013190376A5 (enExample) 2015-04-30
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101828279B1 (ko) 2016-05-18 2018-02-13 서울대학교산학협력단 표면증강라만산란을 이용한 폐암 조기 진단 나노센서 및 그 방법
KR20200115049A (ko) * 2019-03-28 2020-10-07 서울대학교산학협력단 라만 스펙트럼의 다중 피크비를 이용한 방사선량 측정 방법 및 장치

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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JP5737635B2 (ja) * 2013-03-01 2015-06-17 大日本印刷株式会社 金属粒子が担持されたフィルムおよびフィルム製造方法
KR101564092B1 (ko) 2014-04-16 2015-10-29 전자부품연구원 구조색을 나타내는 소재 및 방법
CN109470677B (zh) * 2017-09-08 2021-11-05 清华大学 分子检测装置
JP7361338B2 (ja) * 2018-03-16 2023-10-16 パナソニックＩｐマネジメント株式会社 検出装置、検出基板及び検出方法
JP6536979B2 (ja) * 2018-03-19 2019-07-03 株式会社リコー 用紙綴じ装置、用紙処理装置および画像形成システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4324340B2 (ja) * 2002-03-20 2009-09-02 株式会社安川電機 レーザ加工装置
JP4284152B2 (ja) * 2003-10-29 2009-06-24 独立行政法人科学技術振興機構 炭素薄膜の加工方法及び製造方法
JP2007240361A (ja) * 2006-03-09 2007-09-20 Sekisui Chem Co Ltd 局在プラズモン増強センサ
JP2009109395A (ja) * 2007-10-31 2009-05-21 Fujifilm Corp 微細構造体の作製方法、微細構造体、ラマン分光用デバイス、ラマン分光装置、分析装置、検出装置、および質量分析装置
JP2009243610A (ja) * 2008-03-31 2009-10-22 Musashi Seimitsu Ind Co Ltd 摺動部材又は摺動受部材及びその成形方法
WO2010065071A2 (en) * 2008-11-25 2010-06-10 Regents Of The University Of Minnesota Replication of patterned thin-film structures for use in plasmonics and metamaterials
US8780344B2 (en) * 2009-10-01 2014-07-15 Hewlett-Packard Development Company, L.P. Waveguides configured with arrays of features for performing Raman spectroscopy
JP2011230402A (ja) * 2010-04-28 2011-11-17 Waseda Univ 金属粒子ナノ構造体
JP5609241B2 (ja) * 2010-04-28 2014-10-22 セイコーエプソン株式会社 分光方法及び分析装置
JP5614278B2 (ja) * 2010-12-24 2014-10-29 セイコーエプソン株式会社 センサーチップ、センサーチップの製造方法、検出装置
JP5810667B2 (ja) * 2011-06-23 2015-11-11 セイコーエプソン株式会社 光デバイス及び検出装置
JP2013036961A (ja) * 2011-08-11 2013-02-21 Nippon Steel & Sumikin Chemical Co Ltd 局在型表面プラズモン共鳴センサーユニット及びその製造方法
JP2013167511A (ja) * 2012-02-15 2013-08-29 Panasonic Corp センサ基板とその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101828279B1 (ko) 2016-05-18 2018-02-13 서울대학교산학협력단 표면증강라만산란을 이용한 폐암 조기 진단 나노센서 및 그 방법
KR20200115049A (ko) * 2019-03-28 2020-10-07 서울대학교산학협력단 라만 스펙트럼의 다중 피크비를 이용한 방사선량 측정 방법 및 장치
KR102294344B1 (ko) 2019-03-28 2021-08-27 서울대학교산학협력단 라만 스펙트럼의 다중 피크비를 이용한 방사선량 측정 방법 및 장치

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