JP5922905B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP5922905B2
JP5922905B2 JP2011223457A JP2011223457A JP5922905B2 JP 5922905 B2 JP5922905 B2 JP 5922905B2 JP 2011223457 A JP2011223457 A JP 2011223457A JP 2011223457 A JP2011223457 A JP 2011223457A JP 5922905 B2 JP5922905 B2 JP 5922905B2
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semiconductor substrate
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imaging device
solid
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Japanese (ja)
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JP2013084754A5 (enExample
JP2013084754A (ja
Inventor
篠原　真人
真人 篠原
旬史 岩田
旬史 岩田
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Canon Inc
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Canon Inc
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Priority to JP2011223457A priority Critical patent/JP5922905B2/ja
Priority to US13/607,107 priority patent/US8835269B2/en
Publication of JP2013084754A publication Critical patent/JP2013084754A/ja
Publication of JP2013084754A5 publication Critical patent/JP2013084754A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2011223457A 2011-10-07 2011-10-07 固体撮像装置の製造方法 Active JP5922905B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011223457A JP5922905B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法
US13/607,107 US8835269B2 (en) 2011-10-07 2012-09-07 Method of manufacturing solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011223457A JP5922905B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法

Publications (3)

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JP2013084754A JP2013084754A (ja) 2013-05-09
JP2013084754A5 JP2013084754A5 (enExample) 2014-11-20
JP5922905B2 true JP5922905B2 (ja) 2016-05-24

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JP2011223457A Active JP5922905B2 (ja) 2011-10-07 2011-10-07 固体撮像装置の製造方法

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US (1) US8835269B2 (enExample)
JP (1) JP5922905B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000500B2 (en) * 2009-12-30 2015-04-07 Omnivision Technologies, Inc. Image sensor with doped transfer gate
JP2016058635A (ja) * 2014-09-11 2016-04-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW421962B (en) 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3487575B2 (ja) 1997-12-26 2004-01-19 キヤノン株式会社 光電変換装置
JP2000021995A (ja) * 1998-06-26 2000-01-21 Hitachi Ltd 半導体集積回路装置の製造方法
US6743652B2 (en) * 2002-02-01 2004-06-01 Stmicroelectronics, Inc. Method for making an integrated circuit device including photodiodes
JP2004079813A (ja) * 2002-08-19 2004-03-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP2007299938A (ja) 2006-04-28 2007-11-15 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
JP2008060380A (ja) 2006-08-31 2008-03-13 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法

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US20130089945A1 (en) 2013-04-11
US8835269B2 (en) 2014-09-16
JP2013084754A (ja) 2013-05-09

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