JP5893260B2 - プラズマ処理装置および処理方法 - Google Patents

プラズマ処理装置および処理方法 Download PDF

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JP5893260B2
JP5893260B2 JP2011092364A JP2011092364A JP5893260B2 JP 5893260 B2 JP5893260 B2 JP 5893260B2 JP 2011092364 A JP2011092364 A JP 2011092364A JP 2011092364 A JP2011092364 A JP 2011092364A JP 5893260 B2 JP5893260 B2 JP 5893260B2
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wafer
plasma
ring
shaped member
processing apparatus
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JP2012227278A (ja
JP2012227278A5 (enExample
Inventor
安井　尚輝
尚輝 安井
紀彦 池田
紀彦 池田
荒巻　徹
徹 荒巻
西森　康博
康博 西森
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2011092364A 2011-04-18 2011-04-18 プラズマ処理装置および処理方法 Active JP5893260B2 (ja)

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JP2012227278A JP2012227278A (ja) 2012-11-15
JP2012227278A5 JP2012227278A5 (enExample) 2014-05-29
JP5893260B2 true JP5893260B2 (ja) 2016-03-23

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR101893035B1 (ko) * 2017-09-27 2018-08-30 비씨엔씨 주식회사 플라즈마 공정 챔버의 커버링 어셈블리
WO2020231612A1 (en) * 2019-05-15 2020-11-19 Applied Materials, Inc. Bevel peeling and defectivity solution for substrate processing
JP7333712B2 (ja) * 2019-06-05 2023-08-25 東京エレクトロン株式会社 静電チャック、支持台及びプラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3260168B2 (ja) * 1991-07-23 2002-02-25 東京エレクトロン株式会社 プラズマ処理装置
JPH07135200A (ja) * 1993-11-11 1995-05-23 Tokyo Electron Ltd エッチング装置
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
JP4686867B2 (ja) * 2001-02-20 2011-05-25 東京エレクトロン株式会社 プラズマ処理装置
JP3881290B2 (ja) * 2002-08-20 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2005260011A (ja) * 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2007324186A (ja) * 2006-05-30 2007-12-13 Hitachi High-Technologies Corp プラズマ処理装置

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