JP5884961B2 - 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 - Google Patents

光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 Download PDF

Info

Publication number
JP5884961B2
JP5884961B2 JP2011099707A JP2011099707A JP5884961B2 JP 5884961 B2 JP5884961 B2 JP 5884961B2 JP 2011099707 A JP2011099707 A JP 2011099707A JP 2011099707 A JP2011099707 A JP 2011099707A JP 5884961 B2 JP5884961 B2 JP 5884961B2
Authority
JP
Japan
Prior art keywords
underlayer film
resist underlayer
compound
group
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011099707A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012230320A (ja
JP2012230320A5 (enExample
Inventor
智也 大橋
智也 大橋
高広 岸岡
岸岡  高広
木村 茂雄
木村  茂雄
裕和 西巻
裕和 西巻
友輝 臼井
友輝 臼井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2011099707A priority Critical patent/JP5884961B2/ja
Publication of JP2012230320A publication Critical patent/JP2012230320A/ja
Publication of JP2012230320A5 publication Critical patent/JP2012230320A5/ja
Application granted granted Critical
Publication of JP5884961B2 publication Critical patent/JP5884961B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011099707A 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 Active JP5884961B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011099707A JP5884961B2 (ja) 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011099707A JP5884961B2 (ja) 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物

Publications (3)

Publication Number Publication Date
JP2012230320A JP2012230320A (ja) 2012-11-22
JP2012230320A5 JP2012230320A5 (enExample) 2014-06-05
JP5884961B2 true JP5884961B2 (ja) 2016-03-15

Family

ID=47431901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011099707A Active JP5884961B2 (ja) 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物

Country Status (1)

Country Link
JP (1) JP5884961B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
KR102554076B1 (ko) * 2021-04-26 2023-07-12 주식회사 켐폴 감광성 고분자 및 포토레지스트 조성물
KR20250042527A (ko) * 2023-09-20 2025-03-27 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(prg)를 포함하는포토레지스트 조성물
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
JP4855354B2 (ja) * 2007-07-13 2012-01-18 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
JP2009251392A (ja) * 2008-04-08 2009-10-29 Fujifilm Corp ネガ型レジスト組成物及びパターン形成方法
JP2011053606A (ja) * 2009-09-04 2011-03-17 Sumitomo Chemical Co Ltd レジスト組成物及びパターン形成方法

Also Published As

Publication number Publication date
JP2012230320A (ja) 2012-11-22

Similar Documents

Publication Publication Date Title
JP5708938B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
JP4509106B2 (ja) ビニルエーテル化合物を含む反射防止膜形成組成物
JP5561494B2 (ja) Euvリソグラフィー用レジスト下層膜形成組成物
JP5582316B2 (ja) ポリマー型の光酸発生剤を含有するレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TWI489217B (zh) 電子線微影用光阻底層膜形成組成物
JP5737526B2 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
CN104914672B (zh) 基于含多羟基结构分子玻璃的底部抗反射组合物及其应用
WO2010104074A1 (ja) 側鎖にアセタール構造を有するポリマーを含むレジスト下層膜形成組成物及びレジストパターンの形成方法
JP2010285403A (ja) 架橋剤及び該架橋剤を含有するレジスト下層膜形成組成物
JP2022001941A (ja) ポリマーおよびその製造方法
WO2012105648A1 (ja) 非感光性レジスト下層膜形成組成物
WO2012081619A1 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5884961B2 (ja) 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物
JP4687910B2 (ja) 硫黄原子を含むリソグラフィー用反射防止膜形成組成物
JPH0561197A (ja) 感放射線性組成物
JP5534205B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
JP2004205900A (ja) リン系有機基含有高分子を含む反射防止膜形成組成物
JP2015200796A (ja) 下層膜形成用組成物
JP4952933B2 (ja) 低感度感光性レジスト下層膜形成組成物
JPH0594018A (ja) 感放射線性組成物
WO2025127018A1 (ja) レジスト下層膜形成用組成物
JPH10120939A (ja) 反射防止膜用組成物
JP2017203941A (ja) 添加剤を含むリソグラフィー用レジスト下層膜形成組成物
WO2025187721A1 (ja) レジスト下層膜形成用組成物
WO2025150548A1 (ja) レジスト下層膜形成用組成物

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140416

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140416

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150121

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150805

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150806

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160113

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160126

R151 Written notification of patent or utility model registration

Ref document number: 5884961

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350