JP5884961B2 - 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 - Google Patents

光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 Download PDF

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JP5884961B2
JP5884961B2 JP2011099707A JP2011099707A JP5884961B2 JP 5884961 B2 JP5884961 B2 JP 5884961B2 JP 2011099707 A JP2011099707 A JP 2011099707A JP 2011099707 A JP2011099707 A JP 2011099707A JP 5884961 B2 JP5884961 B2 JP 5884961B2
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underlayer film
resist underlayer
compound
group
polymer
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JP2012230320A (ja
JP2012230320A5 (enExample
Inventor
智也 大橋
智也 大橋
高広 岸岡
岸岡　　高広
木村　茂雄
木村　　茂雄
裕和 西巻
裕和 西巻
友輝 臼井
友輝 臼井
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Nissan Chemical Corp
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Nissan Chemical Corp
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  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011099707A 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 Active JP5884961B2 (ja)

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JP2011099707A JP5884961B2 (ja) 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物

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JP2011099707A JP5884961B2 (ja) 2011-04-27 2011-04-27 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物

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JP2012230320A JP2012230320A (ja) 2012-11-22
JP2012230320A5 JP2012230320A5 (enExample) 2014-06-05
JP5884961B2 true JP5884961B2 (ja) 2016-03-15

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
KR102554076B1 (ko) * 2021-04-26 2023-07-12 주식회사 켐폴 감광성 고분자 및 포토레지스트 조성물
KR20250042527A (ko) * 2023-09-20 2025-03-27 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
JP4855354B2 (ja) * 2007-07-13 2012-01-18 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
JP2009251392A (ja) * 2008-04-08 2009-10-29 Fujifilm Corp ネガ型レジスト組成物及びパターン形成方法
JP2011053606A (ja) * 2009-09-04 2011-03-17 Sumitomo Chemical Co Ltd レジスト組成物及びパターン形成方法

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