JP2012230320A5 - - Google Patents
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- Publication number
- JP2012230320A5 JP2012230320A5 JP2011099707A JP2011099707A JP2012230320A5 JP 2012230320 A5 JP2012230320 A5 JP 2012230320A5 JP 2011099707 A JP2011099707 A JP 2011099707A JP 2011099707 A JP2011099707 A JP 2011099707A JP 2012230320 A5 JP2012230320 A5 JP 2012230320A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- underlayer film
- resist underlayer
- photosensitive resist
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229920000642 polymer Polymers 0.000 claims 5
- 125000001424 substituent group Chemical group 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 2
- 125000000623 heterocyclic group Chemical group 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 2
- PCKZAVNWRLEHIP-UHFFFAOYSA-N 2-hydroxy-1-[4-[[4-(2-hydroxy-2-methylpropanoyl)phenyl]methyl]phenyl]-2-methylpropan-1-one Chemical compound C1=CC(C(=O)C(C)(O)C)=CC=C1CC1=CC=C(C(=O)C(C)(C)O)C=C1 PCKZAVNWRLEHIP-UHFFFAOYSA-N 0.000 claims 1
- SVIQBUBNVYWIDV-UHFFFAOYSA-N 2-methoxy-2-(2-methoxyphenyl)-1-phenylethanone Chemical compound C=1C=CC=C(OC)C=1C(OC)C(=O)C1=CC=CC=C1 SVIQBUBNVYWIDV-UHFFFAOYSA-N 0.000 claims 1
- XVZXOLOFWKSDSR-UHFFFAOYSA-N Cc1cc(C)c([C]=O)c(C)c1 Chemical group Cc1cc(C)c([C]=O)c(C)c1 XVZXOLOFWKSDSR-UHFFFAOYSA-N 0.000 claims 1
- 125000002947 alkylene group Chemical group 0.000 claims 1
- 150000007514 bases Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000003999 initiator Substances 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 239000003505 polymerization initiator Substances 0.000 claims 1
- 239000007870 radical polymerization initiator Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011099707A JP5884961B2 (ja) | 2011-04-27 | 2011-04-27 | 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011099707A JP5884961B2 (ja) | 2011-04-27 | 2011-04-27 | 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012230320A JP2012230320A (ja) | 2012-11-22 |
| JP2012230320A5 true JP2012230320A5 (enExample) | 2014-06-05 |
| JP5884961B2 JP5884961B2 (ja) | 2016-03-15 |
Family
ID=47431901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011099707A Active JP5884961B2 (ja) | 2011-04-27 | 2011-04-27 | 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5884961B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5597616B2 (ja) * | 2011-10-03 | 2014-10-01 | 富士フイルム株式会社 | ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク |
| KR102554076B1 (ko) * | 2021-04-26 | 2023-07-12 | 주식회사 켐폴 | 감광성 고분자 및 포토레지스트 조성물 |
| KR20250042527A (ko) * | 2023-09-20 | 2025-03-27 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583095B1 (ko) * | 2000-06-30 | 2006-05-24 | 주식회사 하이닉스반도체 | 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물 |
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| JP4855354B2 (ja) * | 2007-07-13 | 2012-01-18 | 信越化学工業株式会社 | レジスト下層膜材料およびこれを用いたパターン形成方法 |
| JP2009251392A (ja) * | 2008-04-08 | 2009-10-29 | Fujifilm Corp | ネガ型レジスト組成物及びパターン形成方法 |
| JP2011053606A (ja) * | 2009-09-04 | 2011-03-17 | Sumitomo Chemical Co Ltd | レジスト組成物及びパターン形成方法 |
-
2011
- 2011-04-27 JP JP2011099707A patent/JP5884961B2/ja active Active
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