JP5881742B2 - タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン - Google Patents

タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン Download PDF

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Publication number
JP5881742B2
JP5881742B2 JP2013552408A JP2013552408A JP5881742B2 JP 5881742 B2 JP5881742 B2 JP 5881742B2 JP 2013552408 A JP2013552408 A JP 2013552408A JP 2013552408 A JP2013552408 A JP 2013552408A JP 5881742 B2 JP5881742 B2 JP 5881742B2
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Japan
Prior art keywords
tungsten alloy
hfo
component
tungsten
particles
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JP2013552408A
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English (en)
Japanese (ja)
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JPWO2013103100A1 (ja
Inventor
佳代 中野
佳代 中野
山本 慎一
慎一 山本
宏道 堀江
宏道 堀江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Materials Co Ltd
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Toshiba Corp
Toshiba Materials Co Ltd
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Publication date
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Priority to JP2013552408A priority Critical patent/JP5881742B2/ja
Publication of JPWO2013103100A1 publication Critical patent/JPWO2013103100A1/ja
Application granted granted Critical
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Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/045Alloys based on refractory metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0005Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0031Matrix based on refractory metals, W, Mo, Nb, Hf, Ta, Zr, Ti, V or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/13Solid thermionic cathodes
    • H01J1/14Solid thermionic cathodes characterised by the material
    • H01J1/146Solid thermionic cathodes characterised by the material with metals or alloys as an emissive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02Electrodes; Magnetic control means; Screens
    • H01J23/04Cathodes
    • H01J23/05Cathodes having a cylindrical emissive surface, e.g. cathodes for magnetrons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00Gas-discharge or vapour-discharge lamps
    • H01J61/02Details
    • H01J61/04Electrodes; Screens; Shields
    • H01J61/06Main electrodes
    • H01J61/073Main electrodes for high-pressure discharge lamps
    • H01J61/0735Main electrodes for high-pressure discharge lamps characterised by the material of the electrode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Solid Thermionic Cathode (AREA)
JP2013552408A 2012-01-07 2012-12-21 タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン Active JP5881742B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013552408A JP5881742B2 (ja) 2012-01-07 2012-12-21 タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2012001707 2012-01-07
JP2012001707 2012-01-07
JP2012150021 2012-07-03
JP2012150021 2012-07-03
JP2013552408A JP5881742B2 (ja) 2012-01-07 2012-12-21 タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン
PCT/JP2012/083257 WO2013103100A1 (fr) 2012-01-07 2012-12-21 Alliage de tungstène, partie d'alliage de tungstène obtenu au moyen de celui-ci, lampe à décharge, tube de transmission et magnétron

Publications (2)

Publication Number Publication Date
JPWO2013103100A1 JPWO2013103100A1 (ja) 2015-05-11
JP5881742B2 true JP5881742B2 (ja) 2016-03-09

Family

ID=48745162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013552408A Active JP5881742B2 (ja) 2012-01-07 2012-12-21 タングステン合金、およびそれを用いたタングステン合金部品、放電ランプ、送信管並びにマグネトロン

Country Status (4)

Country Link
EP (2) EP3763839A1 (fr)
JP (1) JP5881742B2 (fr)
CN (1) CN103987864B (fr)
WO (1) WO2013103100A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014021154A1 (fr) * 2012-07-31 2014-02-06 東芝マテリアル株式会社 Électrode négative destinée à une lampe à décharge et son procédé de fabrication
JP6677875B2 (ja) * 2015-03-23 2020-04-08 三菱マテリアル株式会社 多結晶タングステン及びタングステン合金焼結体並びにその製造方法
AT16409U1 (de) 2017-05-23 2019-08-15 Plansee Se Kathodenwerkstoff
CN109378266A (zh) * 2018-09-21 2019-02-22 厦门虹鹭钨钼工业有限公司 一种环保型阴极材料及其制备方法
CN110656273A (zh) * 2019-09-29 2020-01-07 中色(宁夏)东方集团有限公司 一种碳还原制备钨铁合金的方法
WO2021070459A1 (fr) * 2019-10-09 2021-04-15 ウシオ電機株式会社 Lampe à décharge à arc court

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337337A (en) * 1965-12-16 1967-08-22 John W Weeton Method for producing fiber reinforced metallic composites
JP2680370B2 (ja) * 1988-09-09 1997-11-19 株式会社東芝 耐食性材料
US6559582B2 (en) * 2000-08-31 2003-05-06 New Japan Radio Co., Ltd. Cathode and process for producing the same
JP5086503B2 (ja) 2001-02-02 2012-11-28 株式会社東芝 トリウムタングステン線の製造方法
DE10209426A1 (de) * 2002-03-05 2003-09-18 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Kurzbogen-Hochdruckentladungslampe
EP2017360B1 (fr) * 2003-11-19 2012-08-08 JX Nippon Mining & Metals Corporation Hafnium de grande pureté, cible comprenant celui-ci, et procédé de production d'un film mince en hafnium de grande pureté
JP2005285676A (ja) * 2004-03-30 2005-10-13 Nippon Tungsten Co Ltd 放電灯用電極
JP4683896B2 (ja) * 2004-10-05 2011-05-18 日本タングステン株式会社 スポット溶接用電極
CN101167156A (zh) * 2005-04-27 2008-04-23 皇家飞利浦电子股份有限公司 具有用含有3wt%以下铼的钨合金制成的电极的放电灯
JP2007113104A (ja) * 2005-10-24 2007-05-10 Toshiba Corp タングステン電極材料
JP4916264B2 (ja) * 2006-09-20 2012-04-11 日本タングステン株式会社 ヒュージング溶接用電極
JP2008115063A (ja) * 2006-11-06 2008-05-22 Mitsuhide Kawasaki 高純度ハフニウム材料および溶媒抽出法を用いた該材料の製造方法。
JP4917055B2 (ja) * 2008-02-08 2012-04-18 Jx日鉱日石金属株式会社 高純度ジルコニウム又はハフニウムの製造方法
CN102246260A (zh) * 2008-12-08 2011-11-16 联合材料公司 钨电极材料和热电子发射电流测定装置
JP4486163B1 (ja) * 2008-12-08 2010-06-23 株式会社アライドマテリアル タングステン電極材料およびタングステン電極材料の製造方法
WO2010118380A2 (fr) * 2009-04-10 2010-10-14 Intermolecular, Inc. Eléments de mémoire à commutation résistive ayant des caractéristiques de commutation améliorées
JP2011103240A (ja) 2009-11-11 2011-05-26 Toshiba Materials Co Ltd タングステン電極およびそれを用いた放電ランプ

Also Published As

Publication number Publication date
EP3763839A1 (fr) 2021-01-13
EP2801629A1 (fr) 2014-11-12
EP2801629A4 (fr) 2015-12-02
WO2013103100A1 (fr) 2013-07-11
EP2801629B1 (fr) 2020-12-02
JPWO2013103100A1 (ja) 2015-05-11
CN103987864A (zh) 2014-08-13
CN103987864B (zh) 2017-03-08

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