JP5874670B2 - 撮像装置および撮像表示システム - Google Patents

撮像装置および撮像表示システム Download PDF

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Publication number
JP5874670B2
JP5874670B2 JP2013068636A JP2013068636A JP5874670B2 JP 5874670 B2 JP5874670 B2 JP 5874670B2 JP 2013068636 A JP2013068636 A JP 2013068636A JP 2013068636 A JP2013068636 A JP 2013068636A JP 5874670 B2 JP5874670 B2 JP 5874670B2
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Japan
Prior art keywords
voltage
transistor
imaging
unit
gate electrode
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JP2013068636A
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English (en)
Japanese (ja)
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JP2014192825A5 (enExample
JP2014192825A (ja
Inventor
山田　泰弘
泰弘 山田
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013068636A priority Critical patent/JP5874670B2/ja
Priority to US14/220,769 priority patent/US9412783B2/en
Priority to CN201410108644.2A priority patent/CN104079847B/zh
Publication of JP2014192825A publication Critical patent/JP2014192825A/ja
Publication of JP2014192825A5 publication Critical patent/JP2014192825A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2013068636A 2013-03-28 2013-03-28 撮像装置および撮像表示システム Expired - Fee Related JP5874670B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013068636A JP5874670B2 (ja) 2013-03-28 2013-03-28 撮像装置および撮像表示システム
US14/220,769 US9412783B2 (en) 2013-03-28 2014-03-20 Image pickup unit and image pickup display system
CN201410108644.2A CN104079847B (zh) 2013-03-28 2014-03-21 摄像装置和图像拍摄显示系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013068636A JP5874670B2 (ja) 2013-03-28 2013-03-28 撮像装置および撮像表示システム

Publications (3)

Publication Number Publication Date
JP2014192825A JP2014192825A (ja) 2014-10-06
JP2014192825A5 JP2014192825A5 (enExample) 2015-04-09
JP5874670B2 true JP5874670B2 (ja) 2016-03-02

Family

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Family Applications (1)

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JP2013068636A Expired - Fee Related JP5874670B2 (ja) 2013-03-28 2013-03-28 撮像装置および撮像表示システム

Country Status (3)

Country Link
US (1) US9412783B2 (enExample)
JP (1) JP5874670B2 (enExample)
CN (1) CN104079847B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10896923B2 (en) 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
KR102114629B1 (ko) * 2015-09-30 2020-05-25 가부시키가이샤 니콘 촬상 소자 및 전자 카메라
JP2017143135A (ja) * 2016-02-09 2017-08-17 株式会社ジャパンディスプレイ 薄膜トランジスタ
CN107851656B (zh) * 2016-03-04 2022-12-16 索尼公司 摄像装置和测距系统
JP2019032206A (ja) * 2017-08-07 2019-02-28 ソニーセミコンダクタソリューションズ株式会社 距離センサ、距離測定装置、および画像センサ
US11122230B2 (en) * 2017-10-27 2021-09-14 Sony Semiconductor Solutions Corporation Imaging apparatus and imaging method
CN107993629B (zh) * 2018-01-31 2020-05-29 武汉华星光电技术有限公司 液晶显示装置的驱动方法
FI20187059A1 (en) * 2018-04-25 2019-10-26 Athlos Oy X-ray imaging device using ultra-fast scanning
US11025449B2 (en) * 2018-06-03 2021-06-01 Gavriel Cohen Apparatus for protecting a home appliance from false activation
JP7078499B2 (ja) * 2018-09-10 2022-05-31 日立Ｇｅニュークリア・エナジー株式会社 半導体素子、電子機器、イメージセンサ、計測装置、半導体素子の製造方法
CN110460786B (zh) * 2019-08-09 2022-10-28 京东方科技集团股份有限公司 像素感应电路、第一偏置电压确定方法、电子设备
JP7396560B2 (ja) * 2021-06-07 2023-12-12 シャープディスプレイテクノロジー株式会社 Ｘ線撮像装置及びｘ線撮像装置の制御方法
CN114125337B (zh) * 2021-11-12 2023-05-23 四川创安微电子有限公司 一种消除图像传感器的太阳黑子现象的校正结构和方法
JP2023095507A (ja) * 2021-12-24 2023-07-06 キヤノン株式会社 放射線撮像装置の作動方法、放射線撮像装置およびプログラム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3363888B2 (ja) * 1991-09-27 2003-01-08 キヤノン株式会社 電子回路装置
JP3651660B2 (ja) * 1999-09-27 2005-05-25 カシオ計算機株式会社 フォトセンサシステム及びその駆動制御方法
US6888571B1 (en) * 1999-09-27 2005-05-03 Casio Computer Co., Ltd. Photosensor system and drive control method thereof
US6423958B1 (en) * 2000-02-18 2002-07-23 Innotech Corporation Solid state imaging device and method of driving the same
JP2002151669A (ja) * 2000-11-14 2002-05-24 Toshiba Corp Ｘ線撮像装置
US7286174B1 (en) * 2001-06-05 2007-10-23 Dalsa, Inc. Dual storage node pixel for CMOS sensor
JP5721994B2 (ja) 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
JP5743407B2 (ja) * 2010-01-15 2015-07-01 キヤノン株式会社 トランジスタの駆動方法及び該方法で駆動されるトランジスタを含む表示装置
KR101928897B1 (ko) * 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
JP2012146805A (ja) * 2011-01-12 2012-08-02 Sony Corp 放射線撮像装置、放射線撮像表示システムおよびトランジスタ
KR101906974B1 (ko) * 2011-04-25 2018-10-12 삼성전자주식회사 광센싱 장치 및 그 구동 방법

Also Published As

Publication number Publication date
CN104079847B (zh) 2018-01-19
US20140291483A1 (en) 2014-10-02
CN104079847A (zh) 2014-10-01
JP2014192825A (ja) 2014-10-06
US9412783B2 (en) 2016-08-09

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