JP5872002B2 - 保護された共振器 - Google Patents
保護された共振器 Download PDFInfo
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- JP5872002B2 JP5872002B2 JP2014168932A JP2014168932A JP5872002B2 JP 5872002 B2 JP5872002 B2 JP 5872002B2 JP 2014168932 A JP2014168932 A JP 2014168932A JP 2014168932 A JP2014168932 A JP 2014168932A JP 5872002 B2 JP5872002 B2 JP 5872002B2
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- 239000000463 material Substances 0.000 claims description 67
- 230000007704 transition Effects 0.000 claims description 38
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 19
- 230000004044 response Effects 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 5
- 239000011810 insulating material Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 130
- 230000035882 stress Effects 0.000 description 25
- 230000032683 aging Effects 0.000 description 23
- 230000007613 environmental effect Effects 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 19
- 238000001228 spectrum Methods 0.000 description 18
- 230000008859 change Effects 0.000 description 17
- 239000011241 protective layer Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000003679 aging effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000006355 external stress Effects 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000005865 ionizing radiation Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000003920 environmental process Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Further insulation means against electrical, physical or chemical damage, e.g. protective coatings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0557—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Description
本出願は、その開示が参照により本明細書に組み込まれている、2009年1月26日に出願した「Protected Resonator」という名称の米国特許出願第12/321,860号の利益を主張するものである。
v=v(c33/d) (1)
で定義され、ここで、vは材料中の音速であり、c33は波の伝播方向における材料の剛性係数であり、dは材料密度である。層厚さは、下式
t=Nx(v/f)/4 (2)
で計算され、ここで、tは層厚さであり、fはブラッグ中心周波数である。Nは1以上の奇数である。
Claims (13)
- 共振器であって、
基板と、
前記基板の上に形成され、圧電材料を含む圧電層であって、前記圧電層の少なくとも一部が2つの電極の間に配置され、前記圧電層が、活性的内部領域および周辺のカラー領域の2つの画定された領域を有する、圧電層と、
前記圧電層の上、前記圧電層の下、または前記圧電層の上および下の両方のいずれかに形成され、前記圧電層と少なくとも同一の広がりを持つ横方向の広がりを有するブラッグ構造と、
前記活性的内部領域の前記横方向の広がりを画定する誘電体スペーサと
を備え、前記スペーサが前記圧電層の前記周辺に隣接し、窓が、下部の前記電極で終端する前記スペーサの中に形成され、導電性材料が、前記窓の中に配置され、少なくとも前記ブラッグ構造と前記周辺のカラー領域は前記共振器の前記活性的内部領域内の前記圧電材料を外部環境から隔離する、共振器。 - 前記導電性材料が、前記2つの電極と前記基板上に形成された接触パッドとの間の電気的相互接続をもたらす、請求項1に記載の共振器。
- 前記導電性材料が、下部の前記電極と前記基板に形成された活性的デバイスとの間に電気的相互接続をもたらす、請求項1に記載の共振器。
- 前記導電性材料が、上部の前記ブラッグ構造と接触する、請求項1に記載の共振器。
- 上部の前記ブラッグ層および前記導電性材料の上に形成された不動態化層をさらに備える、請求項4に記載の共振器。
- 絶縁材料が前記不動態化層の上に形成される、請求項5に記載の共振器。
- 前記周辺のカラー領域、前記ブラッグ構造、前記不動態化層、および前記絶縁材料が共に、前記共振器の前記活性的内部領域内の前記圧電材料を、外部環境から隔離する、請求項6に記載の共振器。
- 前記共振器が配置されるプラスティック・パッケージをさらに備える、請求項7に記載の共振器。
- 前記圧電層上に形成された温度補償層をさらに備える、請求項1に記載の共振器。
- 動作中に、周波数の関数としての前記共振器のインピーダンス応答において、約5ppm/年以下の速度で転移を示す、請求項1に記載の共振器。
- 基板と、
前記基板の上に形成された圧電層であって、前記圧電層の少なくとも一部が2つの電極の間に配置され、前記圧電層が、活性的内部領域および周辺のカラー領域の2つの画定された領域を有し、前記領域がスペーサで画定される、圧電層と、
前記圧電層の上に形成されたキャップ層であって、前記圧電層が前記基板と分離され、前記キャップ層で前記基板上に支持される、キャップ層と
を備える、共振器。 - 前記キャップ層がブラッグ層として構築される、請求項11に記載の共振器。
- 動作中に、周波数の関数としての前記共振器のインピーダンス応答において、約5ppm/年以下の速度で転移を示す、請求項11に記載の共振器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/321,860 | 2009-01-26 | ||
US12/321,860 US8030823B2 (en) | 2009-01-26 | 2009-01-26 | Protected resonator |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011548189A Division JP2012516120A (ja) | 2009-01-26 | 2010-01-25 | 保護された共振器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015019387A JP2015019387A (ja) | 2015-01-29 |
JP5872002B2 true JP5872002B2 (ja) | 2016-03-01 |
Family
ID=42353604
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011548189A Pending JP2012516120A (ja) | 2009-01-26 | 2010-01-25 | 保護された共振器 |
JP2014168932A Expired - Fee Related JP5872002B2 (ja) | 2009-01-26 | 2014-08-22 | 保護された共振器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011548189A Pending JP2012516120A (ja) | 2009-01-26 | 2010-01-25 | 保護された共振器 |
Country Status (4)
Country | Link |
---|---|
US (4) | US8030823B2 (ja) |
EP (1) | EP2389726A4 (ja) |
JP (2) | JP2012516120A (ja) |
WO (1) | WO2010085743A2 (ja) |
Families Citing this family (63)
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-
2009
- 2009-01-26 US US12/321,860 patent/US8030823B2/en not_active Expired - Fee Related
-
2010
- 2010-01-25 JP JP2011548189A patent/JP2012516120A/ja active Pending
- 2010-01-25 WO PCT/US2010/021975 patent/WO2010085743A2/en active Application Filing
- 2010-01-25 EP EP10733964.0A patent/EP2389726A4/en not_active Withdrawn
-
2011
- 2011-09-27 US US13/246,304 patent/US8222795B2/en not_active Expired - Fee Related
-
2012
- 2012-07-16 US US13/549,676 patent/US8487511B2/en not_active Expired - Fee Related
-
2013
- 2013-07-15 US US13/941,619 patent/US20130300259A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
US20130300259A1 (en) | 2013-11-14 |
JP2012516120A (ja) | 2012-07-12 |
US8030823B2 (en) | 2011-10-04 |
WO2010085743A2 (en) | 2010-07-29 |
US8487511B2 (en) | 2013-07-16 |
EP2389726A2 (en) | 2011-11-30 |
US20100187948A1 (en) | 2010-07-29 |
US20120274183A1 (en) | 2012-11-01 |
EP2389726A4 (en) | 2014-04-23 |
US20120013224A1 (en) | 2012-01-19 |
WO2010085743A3 (en) | 2010-10-07 |
US8222795B2 (en) | 2012-07-17 |
JP2015019387A (ja) | 2015-01-29 |
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