JP5869452B2 - 傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 - Google Patents
傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 Download PDFInfo
- Publication number
- JP5869452B2 JP5869452B2 JP2012199437A JP2012199437A JP5869452B2 JP 5869452 B2 JP5869452 B2 JP 5869452B2 JP 2012199437 A JP2012199437 A JP 2012199437A JP 2012199437 A JP2012199437 A JP 2012199437A JP 5869452 B2 JP5869452 B2 JP 5869452B2
- Authority
- JP
- Japan
- Prior art keywords
- abs
- uniaxial anisotropy
- layer
- magnetization free
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/716—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by two or more magnetic layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49636—Process for making bearing or component thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/231,451 | 2011-09-13 | ||
| US13/231,451 US8755154B2 (en) | 2011-09-13 | 2011-09-13 | Tuned angled uniaxial anisotropy in trilayer magnetic sensors |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015120959A Division JP6133932B2 (ja) | 2011-09-13 | 2015-06-16 | 傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013062017A JP2013062017A (ja) | 2013-04-04 |
| JP2013062017A5 JP2013062017A5 (enExample) | 2013-08-15 |
| JP5869452B2 true JP5869452B2 (ja) | 2016-02-24 |
Family
ID=47830101
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012199437A Expired - Fee Related JP5869452B2 (ja) | 2011-09-13 | 2012-09-11 | 傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 |
| JP2015120959A Expired - Fee Related JP6133932B2 (ja) | 2011-09-13 | 2015-06-16 | 傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015120959A Expired - Fee Related JP6133932B2 (ja) | 2011-09-13 | 2015-06-16 | 傾斜した一軸異方性が調整された装置およびセンサ、ならびに傾斜した一軸異方性を調整する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8755154B2 (enExample) |
| JP (2) | JP5869452B2 (enExample) |
| KR (1) | KR101336861B1 (enExample) |
| CN (1) | CN102997939B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8879214B2 (en) * | 2011-12-21 | 2014-11-04 | HGST Netherlands B.V. | Half metal trilayer TMR reader with negative interlayer coupling |
| US9240200B2 (en) * | 2012-11-28 | 2016-01-19 | Seagate Technology Llc | Magnetic element with crossed anisotropies |
| JP5950166B2 (ja) | 2013-03-25 | 2016-07-13 | ソニー株式会社 | 情報処理システム、および情報処理システムの情報処理方法、撮像装置および撮像方法、並びにプログラム |
| US9508366B2 (en) * | 2013-08-23 | 2016-11-29 | Seagate Technology Llc | Reader structure |
| CN103424131B (zh) * | 2013-08-26 | 2015-08-05 | 电子科技大学 | 一种垂直偏置磁传感单元的制备方法 |
| PL2846334T3 (pl) * | 2013-09-05 | 2018-04-30 | Deutsches Elektronen-Synchrotron Desy | Sposób wytwarzania wielowarstwowego urządzenia magnetoelektronicznego i urządzenie magnetoelektroniczne |
| US9349391B2 (en) * | 2013-12-04 | 2016-05-24 | HGST Netherlands B.V. | Controlling magnetic layer anisotropy field by oblique angle static deposition |
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| JPH06220609A (ja) * | 1992-07-31 | 1994-08-09 | Sony Corp | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
| US5408377A (en) | 1993-10-15 | 1995-04-18 | International Business Machines Corporation | Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor |
| US5576914A (en) | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
| US5654854A (en) * | 1995-11-30 | 1997-08-05 | Quantum Corporation | Longitudinally biased magnetoresistive sensor having a concave shaped active region to reduce Barkhausen noise by achieving a substantially single magnetic domain state |
| US5764567A (en) | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
| US5726841A (en) | 1996-06-11 | 1998-03-10 | Read-Rite Corporation | Thin film magnetic head with trimmed pole tips etched by focused ion beam for undershoot reduction |
| US5978184A (en) | 1997-05-29 | 1999-11-02 | Tdk Corporation | Magnetoresistive effect element and thin film magnetic head with the element |
| US6795280B1 (en) | 1998-11-18 | 2004-09-21 | Seagate Technology Llc | Tunneling magneto-resistive read head with two-piece free layer |
| US6204071B1 (en) | 1999-09-30 | 2001-03-20 | Headway Technologies, Inc. | Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration |
| US6233172B1 (en) | 1999-12-17 | 2001-05-15 | Motorola, Inc. | Magnetic element with dual magnetic states and fabrication method thereof |
| JP2003526911A (ja) | 2000-03-09 | 2003-09-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 結合層を備える磁気装置並びにそのような装置を製造及び作動させる方法 |
| US6700760B1 (en) | 2000-04-27 | 2004-03-02 | Seagate Technology Llc | Tunneling magnetoresistive head in current perpendicular to plane mode |
| JP3618654B2 (ja) | 2000-09-11 | 2005-02-09 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置 |
| DE10196646T1 (de) * | 2000-09-19 | 2003-08-21 | Seagate Technology Llc | Riesenmagnetowiderstand- bzw. GMR-Sensor mit selbstkonsistenten Entmagnetisierungsfeldern |
| JP3657916B2 (ja) | 2001-02-01 | 2005-06-08 | 株式会社東芝 | 磁気抵抗効果ヘッドおよび垂直磁気記録再生装置 |
| US6847509B2 (en) * | 2001-02-01 | 2005-01-25 | Kabushiki Kaisha Toshiba | Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus |
| US6667862B2 (en) | 2001-02-20 | 2003-12-23 | Carnegie Mellon University | Magnetoresistive read head having permanent magnet on top of magnetoresistive element |
| US7035062B1 (en) * | 2001-11-29 | 2006-04-25 | Seagate Technology Llc | Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments |
| US7151654B1 (en) | 2002-03-12 | 2006-12-19 | Seagate Technology Llc | TMR head structure with conductive shunt |
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| JP4303920B2 (ja) | 2002-06-27 | 2009-07-29 | Tdk株式会社 | 磁気検出素子及びその製造方法 |
| JP4595541B2 (ja) | 2002-07-09 | 2010-12-08 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| US7426097B2 (en) | 2002-07-19 | 2008-09-16 | Honeywell International, Inc. | Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces |
| JP2004221303A (ja) | 2003-01-15 | 2004-08-05 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| JP2005078750A (ja) | 2003-09-02 | 2005-03-24 | Toshiba Corp | 磁気記録再生装置 |
| US7719802B2 (en) | 2003-09-23 | 2010-05-18 | Seagate Technology Llc | Magnetic sensor with electrically defined active area dimensions |
| US7177122B2 (en) * | 2003-10-27 | 2007-02-13 | Seagate Technology Llc | Biasing for tri-layer magnetoresistive sensors |
| US7061725B2 (en) | 2003-12-01 | 2006-06-13 | Seagate Technology Llc | Magnetic read sensor with stripe width and stripe height control |
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| US8015694B2 (en) * | 2007-12-18 | 2011-09-13 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor |
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| JPWO2009154009A1 (ja) * | 2008-06-20 | 2011-11-24 | キヤノンアネルバ株式会社 | 磁気抵抗素子の製造方法、スパッタ成膜チャンバー、スパッタ成膜チャンバーを有する磁気抵抗素子の製造装置、プログラム、記憶媒体 |
| US20110007426A1 (en) * | 2009-07-13 | 2011-01-13 | Seagate Technology Llc | Trapezoidal back bias and trilayer reader geometry to enhance device performance |
| JP5443421B2 (ja) * | 2011-03-24 | 2014-03-19 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッドジンバルアッセンブリ、及び、磁気記録再生装置 |
-
2011
- 2011-09-13 US US13/231,451 patent/US8755154B2/en active Active
-
2012
- 2012-09-11 KR KR1020120100568A patent/KR101336861B1/ko not_active Expired - Fee Related
- 2012-09-11 JP JP2012199437A patent/JP5869452B2/ja not_active Expired - Fee Related
- 2012-09-12 CN CN201210337348.0A patent/CN102997939B/zh not_active Expired - Fee Related
-
2015
- 2015-06-16 JP JP2015120959A patent/JP6133932B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130029017A (ko) | 2013-03-21 |
| JP2015207337A (ja) | 2015-11-19 |
| KR101336861B1 (ko) | 2013-12-04 |
| US8755154B2 (en) | 2014-06-17 |
| CN102997939A (zh) | 2013-03-27 |
| JP2013062017A (ja) | 2013-04-04 |
| US20130065085A1 (en) | 2013-03-14 |
| CN102997939B (zh) | 2015-09-30 |
| JP6133932B2 (ja) | 2017-05-24 |
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