JP5866973B2 - Method for manufacturing vibration device - Google Patents

Description

  The present invention relates to a vibration device, a method for manufacturing the vibration device, and an electronic apparatus including the vibration device.

Conventionally, as a vibration device, a container body made of a laminated ceramic having a bottom wall layer and a frame wall layer and having a concave shape, and one end both sides are fixed to one end side of the bottom wall layer accommodated in the container body. There is known a surface-mount crystal resonator having a crystal piece and a thermistor housed in a container body together with the crystal piece (see, for example, Patent Document 1).
The crystal resonator detects the operating temperature of the crystal piece based on a change in resistance value accompanying a change in ambient temperature in the thermistor, and a temperature compensation mechanism (hereinafter referred to as a temperature compensation circuit) is accompanied by a change in ambient temperature. It is said that an excellent frequency temperature characteristic can be obtained by correcting a shift in the resonance frequency of a crystal piece (hereinafter referred to as a vibrating piece).

JP 2008-205938 A

However, according to the experiments by the inventors, the thermistor is, for example, a solder bonding process using a reflow furnace when mounted in a container body that houses (contains) the thermistor, and also the conductivity when mounted. It has been found that the room temperature resistance value changes (shifts) with respect to the value before the heat treatment by heat treatment such as heat curing treatment of the adhesive (specifically, the room temperature resistance value tends to increase).
This cause is considered to be due to partial oxidation by heating of low molecular weight compounds (for example, waxes) contained in the thermistor conductive composition.

As a result, the crystal resonator (hereinafter, referred to as a vibrating device) has a difference between the value at the time of setting and the value at the time of actual use in the normal temperature resistance value that is a reference for temperature detection of the thermistor.
As a result, the temperature detection accuracy of the thermistor deteriorates, and the above-described vibrating device has a problem in correcting the resonance frequency of the resonator element by the temperature compensation circuit that is performed based on the change in the resistance value accompanying the change in the ambient temperature in the thermistor. There is a possibility that the frequency temperature characteristic is deteriorated.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  [Application Example 1] A vibration device according to this application example includes a vibration piece, a thermistor, and a container in which the vibration piece and the thermistor are mounted, and a temperature characteristic of a resistance value of the thermistor is: The change in the temperature characteristic of the resistance value in the manufacturing process is corrected so that the temperature characteristic of the set resistance value set in advance is obtained.

According to this, in the vibration device, the change in the temperature characteristic of the resistance value in the manufacturing process is corrected so that the temperature characteristic of the resistance value of the thermistor becomes the temperature characteristic of the preset resistance value set in advance. .
As a result, the vibrating device has the same or approximate temperature characteristic of the original set resistance value, in which the temperature characteristic of the resistance value during normal use of the thermistor (room temperature resistance value) reflects the change in the manufacturing process. Therefore, it avoids the deterioration of thermistor temperature detection accuracy due to the difference in the temperature characteristics of the resistance value between setting and actual use, and maintains the excellent frequency temperature characteristics by the temperature compensation circuit. can do.

  The normal temperature in the present invention is a standard temperature (in particular, including a range of 20 ° C. ± 15 ° C. (5 ° C. to 35 ° C.) specified in Japanese Industrial Standard (JIS Z 8703) unless otherwise specified. (Temperature that does not cool or heat).

  Application Example 2 In the vibration device according to the application example, it is preferable that the vibrating piece and the thermistor are stored in the same storage portion of the container.

  According to this, since the vibrating piece and the thermistor are housed in the same housing portion of the container, the vibrating device can more accurately detect the ambient temperature of the vibrating piece by the thermistor.

  Application Example 3 In the vibration device according to the application example, the container includes a container main body on which the vibration piece and the thermistor are mounted, and a conductive lid that is bonded to the container main body and covers at least the vibration piece. A plurality of electrode terminals connected to the resonator element or the thermistor on the outer bottom surface of the container body, and at least one of the electrode terminals is electrically connected to the lid body. It is preferable.

  According to this, the vibrating device is provided with a plurality of electrode terminals connected to the vibrating piece or the thermistor on the outer bottom surface of the container body, and at least one of the electrode terminals is electrically connected to the lid. Therefore, for example, the shielding performance against external noise and static electricity can be improved.

  Application Example 4 In the vibrating device according to the application example described above, it is preferable that the electrode terminal electrically connected to the lid body is a ground terminal.

  According to this, since the electrode terminal electrically connected to the lid is a ground terminal (synonymous with the GND terminal), the vibration device further improves the shielding performance by grounding the electrode terminal. Can do.

  Application Example 5 In the vibration device according to the application example described above, it is preferable that one of the electrodes of the thermistor including a pair of electrodes is electrically connected to the ground terminal.

  According to this, since one electrode of the thermistor including a pair of electrodes is electrically connected to the ground terminal, the vibration device is configured to detect the change in the resistance value of the thermistor due to the change in the ambient temperature. It can be output by replacing it with a change in value.

  Application Example 6 A vibrating device manufacturing method according to this application example includes a step of preparing a resonator element, a step of preparing a thermistor having a resistance value lower than a preset resistance value, and the resonator element. And a step of preparing a container on which the thermistor is mounted, a step of mounting the vibrating piece and the thermistor on the container, a step of heating the thermistor and adjusting the resistance value to the set resistance value, , Including.

  According to this, the manufacturing method of the vibration device prepares a thermistor having a resistance value lower than a preset resistance value, and heats the thermistor in the manufacturing process to adjust the resistance value to the preset resistance value. Therefore, it is possible to avoid the deterioration of thermistor temperature detection accuracy due to the difference in resistance value between setting and actual use as in the past, and to maintain excellent frequency temperature characteristics by the temperature compensation circuit, for example. A vibration device can be provided.

  Application Example 7 An electronic apparatus according to this application example includes the vibration device according to any one of the application examples.

  According to this, since the electronic apparatus of this configuration includes the vibration device according to any one of the application examples, it is possible to provide an electronic apparatus that exhibits the effect according to any of the application examples.

  Application Example 8 The electronic apparatus according to the application example described above preferably includes an oscillation circuit that drives the resonator element, and a temperature compensation circuit that corrects a frequency variation caused by a temperature change of the resonator element.

  According to this, since the electronic device of this configuration includes the oscillation circuit that drives the resonator element and the temperature compensation circuit that corrects the frequency variation caused by the temperature change of the resonator element, the resonance frequency at which the oscillation circuit oscillates is reduced. Temperature compensation can be performed, and an electronic device having excellent temperature characteristics can be provided.

It is a schematic diagram which shows schematic structure of the crystal oscillator of 1st Embodiment, (a) is a top view seen from the lid (lid body) side, (b) is sectional drawing in the AA of (a). (C) is the top view seen from the bottom face side. The graph which shows transition of the change of the normal temperature resistance value after each manufacturing process with the heat processing of a thermistor. The flowchart which shows the main manufacturing processes of a crystal oscillator. (A), (b) is a schematic cross section explaining a main manufacturing process. It is a schematic diagram which shows schematic structure of the crystal oscillator of a modification, (a) is a top view seen from the lid side, (b) is sectional drawing in the AA of (a), (c) is a bottom face The top view seen from the side. The model perspective view which shows the mobile telephone of 2nd Embodiment.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Embodiments of the invention are described below with reference to the drawings.

(First embodiment)
First, a crystal resonator as an example of a vibrating device will be described.
FIG. 1 is a schematic diagram illustrating a schematic configuration of the crystal resonator according to the first embodiment. 1A is a plan view seen from the lid (lid) side, and FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A, and FIG. These are the top views seen from the bottom face side. In FIG. 1A, the lid is omitted. In addition, for easy understanding, the dimensional ratio of each component is different from the actual one.

  As shown in FIG. 1, a crystal resonator 1 includes a crystal resonator element 10 as a resonator element, a thermistor 20 that functions as a temperature sensor (temperature sensing element), and a crystal resonator element 10 and the thermistor 20 mounted (accommodated). And a package 30 as a container.

The quartz crystal resonator element 10 is, for example, an AT cut type cut out from a rough crystal or the like at a predetermined angle, and has a planar shape formed in a substantially rectangular shape. It has the connected base 12 integrally.
The quartz crystal resonator element 10 has a base 12 formed with lead electrodes 15 a and 16 a drawn from substantially rectangular excitation electrodes 15 and 16 formed on one main surface 13 and the other main surface 14 of the vibration portion 11. Yes.

The lead electrode 15 a is drawn from the excitation electrode 15 on one main surface 13 to the base portion 12 along the longitudinal direction (left and right direction on the paper surface) of the crystal vibrating piece 10, and to the other main surface 14 along the side surface of the base portion 12. It wraps around and extends to the vicinity of the excitation electrode 16 on the other main surface 14.
The lead electrode 16 a is drawn from the excitation electrode 16 on the other main surface 14 to the base portion 12 along the longitudinal direction of the quartz crystal vibrating piece 10, wraps around one main surface 13 along the side surface of the base portion 12, and The surface 13 extends to the vicinity of the excitation electrode 15.
The excitation electrodes 15 and 16 and the extraction electrodes 15a and 16a are, for example, metal films having a structure in which Cr is a base layer and Au is laminated thereon.

The thermistor 20 is, for example, a chip-type (cuboid-shaped) temperature sensing element (temperature sensing resistance element), and has a pair of electrodes 20a and 20b at both ends in the longitudinal direction, and has an electric resistance against temperature changes. It is a resistor with great change.
As the thermistor 20, for example, a thermistor called an NTC (Negative Temperature Coefficient) thermistor whose resistance decreases with increasing temperature is used. NTC thermistors are frequently used as temperature sensors because the change in resistance value is proportional to the change in temperature.

The thermistor 20 is housed in a package 30 and detects the temperature in the vicinity of the quartz crystal vibrating piece 10, thereby serving as a temperature sensor that contributes to correction of frequency fluctuations associated with the temperature change of the quartz crystal vibrating piece 10.
In the present embodiment, the thermistor 20 has a corrected resistance value obtained by correcting a change in the manufacturing process with respect to a preset resistance value (details will be described later).

The package 30 includes a package base 31 as a container body having a substantially rectangular plane shape and a substantially flat plate shape; a lid 32 as a flat cover body that is bonded to the package base 31 and covers the crystal vibrating piece 10 and the thermistor 20; And has a substantially rectangular parallelepiped shape.
The package base 31 is made of an aluminum oxide sintered body (corresponding to a laminated ceramic), quartz, glass, silicon (high resistance silicon), etc., which is formed by laminating, firing and firing ceramic green sheets.
The lid 32 is made of the same material as the package base 31 or a metal such as Kovar, 42 alloy, stainless steel.

The first main surface 33, which is the main surface on one side of the package base 31, is provided with a first recess 34 in which the crystal vibrating piece 10 is mounted, and the thermistor 20 is mounted on the bottom surface 34 a of the first recess 34. A second recess 36 is provided. In the package 30, a storage portion 39 is configured by the first recess 34 and the second recess 36.
As a result, the crystal vibrating piece 10 and the thermistor 20 are accommodated in the same accommodating portion 39 of the package 30.

Internal terminals 34 b and 34 c are provided on the bottom surface 34 a of the first recess 34 of the package base 31 at positions facing the extraction electrodes 15 a and 16 a of the crystal vibrating piece 10.
In the quartz crystal vibrating piece 10, the lead electrodes 15 a and 16 a are bonded to the internal terminals 34 b and 34 c through a conductive adhesive 40 such as an epoxy, silicone, or polyimide that is mixed with a conductive material such as a metal filler. Has been.

Electrode pads 36 b and 36 c are provided on the bottom surface 36 a of the second recess 36 of the package base 31 at positions facing the electrodes 20 a and 20 b of the thermistor 20.
In the thermistor 20, the electrodes 20 a and 20 b are joined to the electrode pads 36 b and 36 c through the conductive adhesive 40.
The thermistor 20 is preferably arranged so that the longitudinal direction intersects (orthogonally) the longitudinal direction of the package base 31. Thereby, the crystal unit 1 can suppress a decrease in the fixing strength (bonding strength) of the thermistor 20 due to the warp of the package base 31 (prone to a large warp in the longitudinal direction).

Electrode terminals 37a, 37b, 37c, and 37d are provided at four corners of the second main surface 35 as the outer bottom surface that is the main surface opposite to the first main surface 33 of the package base 31, respectively.
Of the four electrode terminals 37a to 37d, for example, the two electrode terminals 37b and 37d located at one diagonal are connected to the internal terminals 34b and 34c joined to the lead electrodes 15a and 16a of the crystal vibrating piece 10. The remaining two electrode terminals 37a and 37c located on the other diagonal are connected to electrode pads 36b and 36c joined to the electrodes 20a and 20b of the thermistor 20, respectively.
The internal terminals 34b and 34c, the electrode pads 36b and 36c, and the electrode terminals 37a to 37d are made of, for example, a metal film in which a film such as Ni or Au is laminated on a metallized layer such as W or Mo by plating or the like.

In the crystal resonator 1, the storage portion 39 of the package base 31 is connected to the lid 32 with the thermistor 20 bonded to the electrode pads 36 b and 36 c of the package base 31 and the crystal vibrating piece 10 bonded to the internal terminals 34 b and 34 c. The package base 31 and the lid 32 are joined by a joining member 38 such as a seam ring, low-melting-point glass, or an adhesive, so that the storage portion 39 of the package base 31 is hermetically sealed.
The hermetically sealed housing 39 of the package base 31 is in a vacuum state (a high vacuum state) or a state filled with an inert gas such as nitrogen, helium, or argon. .

When the lid 32 of the package 30 is made of metal (conductive material), a conductive material is used for the bonding member 38, and the electrode terminal 37c is filled with a conductive via (conductive member such as metal). It is preferably electrically connected to the lid 32 through a through hole 36d, an internal wiring 36e, a conductive via 36f, and a bonding member 38.
The electrode terminal 37c is connected to the ground side (GND side) electrode 20a of the thermistor 20 and serves as a ground terminal (GND terminal).
For the electrical connection between the electrode terminal 37c and the lid 32, a not-shown castellation (concave portion) formed along the thickness direction of the package base 31 is provided at the outer corner of the package base 31. A conductive film may be used.

In the quartz crystal resonator 1, the quartz crystal resonator element 10 undergoes thickness shear vibration by a drive signal applied from the outside via the electrode terminals 37 b and 37 d, the internal terminals 34 b and 34 c, the extraction electrodes 15 a and 16 a, and the excitation electrodes 15 and 16. Is resonated (oscillated) at a predetermined frequency.
In the crystal resonator 1, the thermistor 20 detects the ambient temperature of the crystal resonator element 10 in the package base 31 as a temperature sensor, and outputs a detection signal via the electrode terminals 37 a and 37 c.

Here, the resistance value (normal temperature resistance value and temperature characteristic) of the thermistor 20 will be described.
As described above, according to the experiments by the inventors, the thermistor 20 is subjected to a heat treatment in a manufacturing process such as a heat curing treatment of the conductive adhesive 40 when mounted in the package 30 that houses the thermistor 20. As a result, it has been found that the room temperature resistance value tends to increase with respect to the value before the heat treatment. It was also found that the temperature characteristic of the resistance value shifted with the change in the room temperature resistance value. This will be described in detail with reference to FIG.

  FIG. 2 is a graph showing the transition of changes in the room temperature resistance value after each manufacturing process involving thermistor heat treatment. The vertical axis represents the rate of change (%) in the normal temperature resistance value, and the horizontal axis represents the manufacturing process in the order of steps. The number of samples of the crystal unit 1 is 5, and the average value of 5 is plotted on the graph. In addition, the normal temperature resistance value (here, the resistance value at 25 ° C.) of the thermistor 20 is 100 kΩ.

As shown in FIG. 2, the normal temperature resistance value of the thermistor 20 tends to increase with each manufacturing process. Specifically, after the “sealing process” in the third step, it increases by about 0.5%, and after the “annealing one step” in the fourth step, it increases by about 1.0%. It can be seen that there is an increase of slightly less than 1.5% after “two steps” (details of each step will be described later).
From this result, the thermistor 20, for example, corrects the change in the resistance value in the manufacturing process described above (an increase of slightly less than 1.5%) if the preset resistance value is 100 kΩ (rated). As the correction resistance value, one having a normal temperature resistance value of 98 to 99 kΩ (rated) is used.
Thereby, the crystal unit 1 can avoid deterioration in temperature detection accuracy of the thermistor 20 due to a difference in resistance value between setting and actual use.

  More specifically, the temperature detection circuit used in the crystal unit 1 is configured such that, for example, one of the thermistors 20 including a pair of electrodes is grounded (connected to ground) and the other electrode is connected to a power source. Thus, the change in the resistance value of the thermistor 20 due to the change in the ambient temperature is replaced with the change in the voltage value and output to the temperature compensation circuit. The temperature compensation circuit outputs a correction signal to the transmission circuit based on the change in the voltage value, and the oscillation circuit applies the drive signal corrected based on the correction signal to the crystal unit 1. As a result, the quartz resonator 1 is corrected for fluctuations in the resonance frequency of the quartz crystal resonator element 10 due to changes in the ambient temperature, so that excellent frequency temperature characteristics can be obtained.

At this time, if the room temperature resistance value serving as the reference of the thermistor 20 is shifted, the temperature detection circuit replaces the change in the resistance value of the thermistor 20 due to the change in the ambient temperature with the change in the voltage value and outputs it. The output voltage value becomes a value different from the original value.
As a result, the crystal unit 1 may not be able to accurately correct the frequency fluctuation of the crystal resonator element 10 due to the change in the ambient temperature, and may not be able to obtain excellent frequency temperature characteristics.

Based on this, in the present embodiment, if the thermistor 20 has, for example, a preset temperature characteristic and a set resistance value of 100 kΩ, the change in the manufacturing process described above is corrected and the corrected resistance value is obtained. A room temperature resistance value of 98 to 99 kΩ is used.
Thereby, the crystal unit 1 can avoid the above-described deterioration of the temperature detection accuracy of the thermistor 20 due to the difference between the temperature characteristic of the resistance value at the time of setting and the actual use and the resistance value at the normal temperature. .

Next, an example of a method for manufacturing the crystal unit 1 will be described focusing on processes including heat treatment.
FIG. 3 is a flowchart showing main manufacturing steps of the crystal unit. FIG. 4A and FIG. 4B are schematic cross-sectional views for explaining main manufacturing steps. The cross-sectional position in the cross-sectional view is the same as that in FIG.
As shown in FIG. 3, the manufacturing method of the crystal unit 1 includes a crystal resonator element preparation step, a thermistor preparation step, a package preparation step, an element mounting step, a drying step, an annealing step, and a sealing step. And 1 annealing process and 2 annealing processes.

[Quartz vibrating piece preparation process]
First, an AT-cut type crystal vibrating piece 10 cut out at a predetermined angle from the above-described quartz crystal or the like is prepared.
[Thermistor preparation process]
Next, a thermistor 20 having a resistance value lower than a preset resistance value is prepared. Specifically, if the set resistance value (set normal temperature resistance value) is 100 kΩ, the normal temperature resistance value is 98 to 98 in view of (corrected for) the change (increase) in the manufacturing process as described above. A 99 kΩ thermistor 20 is prepared.
[Package preparation process]
Next, a package 30 on which the crystal resonator element 10 and the thermistor 20 described above are mounted (stored) is prepared.

[Element mounting process]
Next, as shown in FIG. 4A, the quartz crystal resonator element 10 and the thermistor 20 as the elements are respectively connected to the first concave portion 34 and the second concave portion 36 of the storage portion 39 of the package base 31. Use (store).
Specifically, after applying the paste-like conductive adhesive 40 to the internal terminals 34b and 34c and the electrode pads 36b and 36c using a coating device such as a dispenser, first, the thermistor 20 is applied to the electrode pads 36b and 36c. The electrodes 20a and 20b, and then the lead electrodes 15a and 16a of the crystal vibrating piece 10 are aligned with the internal terminals 34b and 34c, respectively, so that the crystal vibrating piece 10 and the thermistor 20 are aligned with the first recess 34 and the second recess 36, respectively. To be installed.

[Drying process]
Next, in this state, for example, the conductive adhesive 40 is dried and cured by heating at about 150 ° C. for about 1 hour using a heating device such as a dryer, a thermostat, or a heating furnace (heat curing treatment). At this time, the thermistor 20 is also heated and, as shown in FIG. 2, the room temperature resistance value slightly increases after the drying step.

[Annealing process]
Next, after adjusting the frequency of the quartz crystal resonator element 10, it is left in an atmosphere of about 270 ° C. for about 1 hour using a heating device, and an annealing process (removal of residual gas components and residual distortion of the conductive adhesive 40) is performed. At this time, the thermistor 20 is also heated, and the normal temperature resistance value further increases in the state after the annealing step, as shown in FIG.

[Sealing process]
Next, as shown in FIG. 4B, seam welding (resistance welding) is performed by using a seam ring as a joining member 38 with the lid 32 in the inert gas atmosphere such as nitrogen, helium, or argon. To make it airtight. In addition, at the time of seam welding, the temperature in the storage part 39 (the 1st recessed part 34, the 2nd recessed part 36) of the package base 31 is considered to be about 100 degreeC-200 degreeC. At this time, the thermistor 20 is also heated and, as shown in FIG. 2, the room temperature resistance value increases by about 0.5% in the state after the sealing step.

[One annealing process]
Next, the sample is left in an atmosphere of about 200 ° C. for about 24 hours using a heating device, and a first annealing process (residual strain (stress) removal) is performed. At this time, the thermistor 20 is also heated and, as shown in FIG. 2, the room temperature resistance value increases by about 1.0% in the state after one annealing step.

[Annealing 2 steps]
Next, the substrate is left in an atmosphere of about 200 ° C. for about 48 hours using a heating apparatus, and a second annealing process (residual strain (stress) final removal) is performed. At this time, the thermistor 20 is also heated and, as shown in FIG. 2, the room temperature resistance value increases by a little less than 1.5% in the state after two annealing steps.
Through these steps, the normal temperature resistance value of the thermistor 20 is adjusted to the same or approximate value as the preset resistance value of 100 kΩ.

Through the above steps, a crystal resonator 1 as shown in FIG. 1 is obtained. Note that the order of the crystal vibrating piece preparation step, the thermistor preparation step, and the package preparation step may be changed as appropriate.
It should be noted that the increase in the normal temperature resistance value of the thermistor 20 is almost saturated because the oxidation of the low-molecular compound contained in the conductive composition of the thermistor 20 which is an increase factor has been advanced by heating in each of the above steps. It can be said that.
Thereby, it can be said that the room temperature resistance value of the thermistor 20 hardly increases at the time of heating the completed crystal unit 1 when mounted on an electronic device, for example.

As described above, in the crystal resonator 1 of the first embodiment, a change (increase) in the manufacturing process with respect to a preset resistance value (for example, 100 kΩ at room temperature resistance) set in advance in the thermistor 20. The corrected resistance value (for example, normal temperature resistance value of 98 to 99 kΩ) is used.
As a result, the crystal resonator 1 has a resistance value at the time of actual use of the thermistor 20 that is equal to or close to the original set resistance value added with a change in the manufacturing process. In addition, it is possible to avoid deterioration in temperature detection accuracy of the thermistor 20 due to a difference in resistance value between setting and actual use, and maintain excellent frequency temperature characteristics by the temperature compensation circuit.

  Further, in the crystal resonator 1, the crystal vibrating piece 10 and the thermistor 20 are housed in the first concave portion 34 and the second concave portion 36 in the same housing portion 39 of the package 30. The detection of the 10 ambient temperatures can be performed more accurately than when both are stored in separate storage units.

The crystal resonator 1 is provided with a plurality of electrode terminals 37 a to 37 d connected to the crystal vibrating piece 10 or the thermistor 20 on the second main surface 35 of the package base 31. Of the electrode terminals 37 a to 37 d, the electrode Since the terminal 37c is electrically connected to the lid 32, for example, the shielding property against external noise and static electricity can be improved.
In addition, since the electrode terminal 37c electrically connected to the lid 32 is a ground terminal (GND terminal), the crystal resonator 1 further improves the shielding performance by grounding the electrode terminal 37c. be able to.

  The method for manufacturing the crystal unit 1 includes preparing a thermistor 20 having a resistance value lower than a preset resistance value, and heating the thermistor 20 in several steps to set the resistance value to the preset resistance value. Therefore, it is possible to avoid deterioration of the temperature detection accuracy of the thermistor 20 due to a difference in resistance value between setting and actual use as in the prior art, and maintain excellent frequency temperature characteristics by the temperature compensation circuit. It is possible to provide a crystal resonator capable of satisfying the requirements.

(Modification)
Next, a modification of the first embodiment will be described.
FIG. 5 is a schematic diagram illustrating a schematic configuration of a crystal resonator according to a modification of the first embodiment. 5A is a plan view seen from the lid side, FIG. 5B is a cross-sectional view taken along line AA in FIG. 5A, and FIG. It is the top view seen from. In FIG. 5A, the lid is omitted.
Also, common parts with the first embodiment are denoted by the same reference numerals, detailed description thereof will be omitted, and description will be made centering on parts different from the first embodiment.

As shown in FIG. 5, the crystal resonator 2 of the modification is different in the configuration on the first main surface 133 side of the package 130 as compared to the first embodiment.
In the crystal resonator 2, the first recess 34 is removed from the first main surface 133 of the package base 131, and the second recess 36 in which the thermistor 20 is housed is provided on the first main surface 133. The first main surface 133 is provided with internal terminals 34b and 34c on which the crystal vibrating piece 10 is mounted.

In the crystal resonator 2, the first main surface 133 side of the package base 131 is hermetically sealed by a lid 132 as a metal lid that covers the crystal resonator element 10. The lid 132 is made of a metal such as Kovar, 42 alloy, stainless steel or the like, and is formed in a cap shape having a collar portion 132a provided on the entire circumference.
In the crystal resonator 2, an internal space 132 b in which the crystal resonator element 10 can vibrate is secured by the swelling of the cap portion of the lid 132.
The lid 132 is joined to the first main surface 133 of the package base 131 through a conductive joining member 138 such as a seam ring, a brazing material, and a conductive adhesive.

Accordingly, the storage portion 139 of the package 130 of the crystal unit 2 includes the internal space 132b and the second recess 36. In other words, the crystal vibrating piece 10 and the thermistor 20 are stored in the same storage portion 139.
As in the first embodiment, the crystal unit 2 is in a vacuum state (high vacuum state) or a state filled with an inert gas such as nitrogen, helium, argon, etc., in the storage unit 139 as in the first embodiment. ing.

In addition to the effects of the first embodiment, the crystal resonator 2 of the modified example can exhibit the following effects.
As described above, the crystal resonator 2 has the first recess 34 removed from the first main surface 133 of the package base 131 and the second recess 36 in which the thermistor 20 is housed in the first main surface 133. Yes. Thereby, the crystal unit 2 can simplify the structure of the package base 131 as compared with the first embodiment, for example, by reducing the number of laminated ceramic green sheets.
As a result, the crystal resonator 2 can easily manufacture the package base 131 and reduce the manufacturing cost.

  In the first embodiment and the modification, the crystal resonators 1 and 2 may have a configuration in which the second recess 36 in which the thermistor 20 is accommodated is provided on the second main surface 35 side of the package bases 31 and 131. Good. According to this, since the thermistor 20 is mounted so as to be exposed on the opposite side of the crystal vibrating piece 10, the crystal resonators 1 and 2 are exposed even when the crystal vibrating piece 10 has a defect, for example. The good thermistor 20 is removed and reused easily.

(Second Embodiment)
Next, a mobile phone will be described as an example of an electronic device including the above-described crystal resonator.
FIG. 6 is a schematic perspective view showing the mobile phone of the second embodiment.
A cellular phone 700 is a cellular phone provided with the crystal resonator of the above-described embodiment and the modified example.
A cellular phone 700 shown in FIG. 6 uses the above-described crystal resonator (1 or 2) as a timing device such as a reference clock oscillation source, and further includes a liquid crystal display device 701, a plurality of operation buttons 702, an earpiece 703, And a mouthpiece 704. The form of the mobile phone 700 is not limited to the illustrated type, and may be a so-called smartphone type.

  The above-described vibration device such as a crystal resonator is not limited to the above mobile phone, but an electronic book, a personal computer, a television, a digital still camera, a video camera, a video recorder, a navigation device, a pager, an electronic notebook, a calculator, a word processor, a workstation. In addition, it can be suitably used as a timing device such as a device including a video phone, a POS terminal, and a touch panel, and in any case, an electronic device that exhibits the effects described in the above-described embodiments and modifications can be provided.

Note that an electronic device typified by the cellular phone 700 has an oscillation circuit that drives the crystal resonator element 10 of the crystal resonator (1 or 2) as described above, and a frequency variation caused by a temperature change of the crystal resonator element 10. And a temperature compensation circuit for correction.
According to this, an electronic device typified by the mobile phone 700 includes an oscillation circuit that drives the crystal vibrating piece 10 and a temperature compensation circuit that corrects a frequency variation caused by a temperature change of the crystal vibrating piece 10. Therefore, it is possible to provide temperature compensation for the resonance frequency at which the oscillation circuit oscillates, and to provide an electronic device having excellent temperature characteristics.

The shape of the resonator element is not limited to the flat plate type shown in the figure, but the central part is thick and the peripheral part is thin (convex type, bevel type, mesa type). Conversely, the central part is thin and the peripheral part is thin. A thick type (reverse mesa type) may be used.
The material of the resonator element is not limited to quartz, but lithium tantalate (LiTaO ₃ ), lithium tetraborate (Li ₂ B ₄ O ₇ ), lithium niobate (LiNbO ₃ ), zirconate titanate A piezoelectric material such as lead acid (PZT), zinc oxide (ZnO), and aluminum nitride (AlN), or a semiconductor such as silicon (Si) may be used.
Further, the driving method of the thickness shear vibration may be electrostatic driving by Coulomb force in addition to the piezoelectric effect of the piezoelectric body.

  DESCRIPTION OF SYMBOLS 1, 2 ... Quartz crystal | crystallization vibrator as a vibration device, 10 ... Quartz vibrating piece as a vibration piece, 11 ... Vibrating part, 12 ... Base part, 13 ... One main surface, 14 ... Other main surface, 15, 16 ... Excitation Electrode, 15a, 16a ... extraction electrode, 20 ... thermistor, 20a, 20b ... electrode, 30 ... package as container, 31 ... package base as container body, 32 ... lid as lid, 33 ... first main surface 34 ... first recess 34a ... bottom surface 34b, 34c ... internal terminal 35 ... second main surface as outer bottom surface 36 ... second recess 36a ... bottom surface 36b, 36c ... electrode pad 36d, 36f ... Conductive via, 36e ... internal wiring, 37a, 37b, 37c, 37d ... electrode terminal, 38 ... joining member, 39 ... housing portion, 40 ... conductive adhesive, 130 ... package, 131 ... package base, 32 ... Lid, 132a ... Brim part, 132b ... Internal space, 133 ... First main surface, 138 ... Conductive joint member, 139 ... Storage part, 700 ... Mobile phone, 701 ... Liquid crystal display device, 702 ... Operation button, 703 ... earpiece, 704 ... mouthpiece.

Claims (2)

Preparing a vibrating piece, a thermistor, and a container for mounting the vibrating piece and the thermistor;
Mounting the vibrating piece and the thermistor on the container;
Including
After mounting the thermistor on the container, the method includes the step of correcting the resistance value by heating the thermistor. In the manufacturing method of the vibration device according to claim 1 ,
The conductive composition of the thermistor contains a low molecular compound,
In the correcting step, the low-molecular compound is partially oxidized.

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