JP5861897B2 - マイクロリソグラフィ投影露光装置のための光学系 - Google Patents
マイクロリソグラフィ投影露光装置のための光学系 Download PDFInfo
- Publication number
- JP5861897B2 JP5861897B2 JP2014052348A JP2014052348A JP5861897B2 JP 5861897 B2 JP5861897 B2 JP 5861897B2 JP 2014052348 A JP2014052348 A JP 2014052348A JP 2014052348 A JP2014052348 A JP 2014052348A JP 5861897 B2 JP5861897 B2 JP 5861897B2
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- polarization
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- 230000003287 optical effect Effects 0.000 title claims description 124
- 230000010287 polarization Effects 0.000 claims description 91
- 239000013078 crystal Substances 0.000 claims description 33
- 238000005286 illumination Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 210000001747 pupil Anatomy 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/04—Prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polarising Elements (AREA)
- Microscoopes, Condenser (AREA)
- Lenses (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013204453.4 | 2013-03-14 | ||
DE102013204453.4A DE102013204453B4 (de) | 2013-03-14 | 2013-03-14 | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014179619A JP2014179619A (ja) | 2014-09-25 |
JP5861897B2 true JP5861897B2 (ja) | 2016-02-16 |
Family
ID=51418768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014052348A Active JP5861897B2 (ja) | 2013-03-14 | 2014-03-14 | マイクロリソグラフィ投影露光装置のための光学系 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5861897B2 (ko) |
KR (1) | KR101597416B1 (ko) |
DE (1) | DE102013204453B4 (ko) |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19535392A1 (de) | 1995-09-23 | 1997-03-27 | Zeiss Carl Fa | Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit |
JP3652296B2 (ja) | 2001-10-26 | 2005-05-25 | キヤノン株式会社 | 光学装置 |
US7714983B2 (en) | 2003-09-12 | 2010-05-11 | Carl Zeiss Smt Ag | Illumination system for a microlithography projection exposure installation |
ATE396428T1 (de) | 2003-09-26 | 2008-06-15 | Zeiss Carl Smt Ag | Belichtungsverfahren sowie projektions- belichtungssystem zur ausführung des verfahrens |
TW201834020A (zh) * | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
US8279524B2 (en) | 2004-01-16 | 2012-10-02 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
DE102004011733A1 (de) | 2004-03-04 | 2005-09-22 | Carl Zeiss Smt Ag | Transmissionsfiltervorrichtung |
JP2005333001A (ja) * | 2004-05-20 | 2005-12-02 | Nikon Corp | 照明光学装置、露光装置、および露光方法 |
TW200923418A (en) | 2005-01-21 | 2009-06-01 | Nikon Corp | Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device |
KR20080043835A (ko) * | 2005-09-14 | 2008-05-19 | 칼 짜이스 에스엠테 아게 | 마이크로리소그래피용 노광 시스템의 광학 시스템 |
DE102006038643B4 (de) | 2006-08-17 | 2009-06-10 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
DE102007027985A1 (de) * | 2006-12-21 | 2008-06-26 | Carl Zeiss Smt Ag | Optisches System, insbesondere Beleuchtungseinrichtung oder Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
DE102007043958B4 (de) | 2007-09-14 | 2011-08-25 | Carl Zeiss SMT GmbH, 73447 | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
DE102007055567A1 (de) * | 2007-11-20 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System |
DE102008009601A1 (de) | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
JP2010141091A (ja) * | 2008-12-11 | 2010-06-24 | Nikon Corp | 偏光制御ユニット、照明光学系、露光装置、およびデバイス製造方法 |
-
2013
- 2013-03-14 DE DE102013204453.4A patent/DE102013204453B4/de active Active
-
2014
- 2014-03-10 KR KR1020140027765A patent/KR101597416B1/ko active IP Right Grant
- 2014-03-14 JP JP2014052348A patent/JP5861897B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014179619A (ja) | 2014-09-25 |
DE102013204453B4 (de) | 2019-11-21 |
KR101597416B1 (ko) | 2016-02-24 |
KR20140113384A (ko) | 2014-09-24 |
DE102013204453A1 (de) | 2014-09-18 |
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