JP5855159B2 - 高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物 - Google Patents
高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物 Download PDFInfo
- Publication number
- JP5855159B2 JP5855159B2 JP2014092562A JP2014092562A JP5855159B2 JP 5855159 B2 JP5855159 B2 JP 5855159B2 JP 2014092562 A JP2014092562 A JP 2014092562A JP 2014092562 A JP2014092562 A JP 2014092562A JP 5855159 B2 JP5855159 B2 JP 5855159B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- composition
- range
- chemical formula
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 67
- 229910052797 bismuth Inorganic materials 0.000 title claims description 23
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims description 23
- 239000000126 substance Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 15
- 101100454129 Caenorhabditis elegans ksr-2 gene Proteins 0.000 claims description 12
- 239000002135 nanosheet Substances 0.000 claims description 12
- 239000003985 ceramic capacitor Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 description 23
- 239000010410 layer Substances 0.000 description 11
- 229910001414 potassium ion Inorganic materials 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910010293 ceramic material Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000006467 substitution reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 229910001427 strontium ion Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 150000001768 cations Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- -1 BaTiO 3 Chemical compound 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
本研究は、梨花女子大学産学協力団(参加機関:韓国科学技術研究院)の主管下で 韓国産業通商資源部の部品・素材産業の競争力向上(素材・部品の技術開発)事業(課題名:誘電率400以上を有する誘電体無機ナノシートの合成技術及びこれを用いたMLCC素子用高誘電体の薄膜製造技術開発、課題固有番号:1415125378)の支援によって行われたものである。
また、本発明は、ナノレベルの薄膜でも線形で且つ優れた誘電率を有し絶縁特性を実現することができる低温素子の製作に応用可能なナノシート形態の誘電物質を提供することを他の目的とする。
本発明の目的を達成するためのまた他の一具現例において、前記ニオブ酸ビスマス誘電体組成物を含む積層セラミックコンデンサを提供する。
本発明の目的を達成するためのまた他の一具現例において、前記ニオブ酸ビスマス誘電体組成物を含むマイクロ波誘電体を提供する。
本発明の目的を達成するためのまた他の一具現例において、前記ニオブ酸ビスマス誘電体組成物を含むコンピュータ用DRAMメモリを提供する。
本発明に係る高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物は、高い誘電率と良好な絶縁特性を持つので、積層セラミックコンデンサ、マイクロ波誘電体、次世代TFTの誘電膜などに活用できる。
また、本発明に係る高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物は、次世代デバイスに適用可能なナノレベルのMLCCに機能性誘電薄膜として応用できる。
本発明は、一般式KSr2(1-x)Bi(y/3)xNb3O10+δ(KSBNO)、HSr2(1−x)Bi(y/3)xNb3O10+δ(HSBNO)、Sr2(1−x)Bi(y/3)xNb3O10+δ(SBNO)で示される(ここで、全ての組成のモル分率xは0<x≦0.3、yは4≦y≦6、δは0≦x≦0.3の範囲である。)誘電体組成物に関するものであって、組成の変化により高い誘電特性を持つKSBNO誘電体組成物を合成する。また、前記KSBNO誘電体組成物を基盤にH+イオンを用いたK+イオンの置換を通じてKSBNOが持つ非線形誘電特性を線形誘電特性に変化させ且つ誘電損失を減少させることで、高い誘電率、低い誘電損失、線形誘電特性を持つHSBNO誘電体組成物を合成する。また、前記HSBNO誘電体組成物のH+イオンをTBA+イオンに置換し剥離することでSBNO誘電体組成物を製造する。
KSr2(1−x)Bi(y/3)xNb3O10+δ (KSBNO)
(前記化学式1中、モル分率xは0<x≦0.3、yは4≦y≦6、δは0≦x≦0.3の範囲である。)
HSr2(1−x)Bi(y/3)xNb3O10+δ (HSBNO)
(前記化学式2中、モル分率xは0<x≦0.3、yは4≦y≦6、δは0≦x≦0.3の範囲である。)
Sr2(1-x)Bi(y/3)xNb3O10+δ (SBNO)
(前記化学式3中、モル分率xは0<x≦0.3、yは4≦y≦6、δは0≦x≦0.3の範囲である。)
以下、実施例を通じて本発明をより詳しく説明することにする。これらの実施例は、専ら本発明を例示するためのものに過ぎず、本発明の範囲がこれらの実施例によって制限されるものではないことは当業界における通常の知識を有する者には自明なことである。
次いで、本発明の実施形態について詳述する。本発明における誘電体セラミックは、KSr2Nb3O10で示される主成分のSrサイトをBiに置換して、KSr2(1−x)Bi(y/3)xNb3O10+δ(KSBNO)で示される(ここで、モル分率xは0<x≦0.3、yは4≦y≦6の範囲)組成式を満足する物質、Sr2(1−x)Bi(y/3)xNb3O10+δ層の間に一層ずつ存在しているK+イオン層を酸溶液にてH+イオン置換して、HSr2(1−x)Bi(y/3)xNb3O10+δ(HSBNO)で示される(ここで、モル分率xは0<x≦0.3、yは4≦y≦6、δは0≦x≦0.3の範囲)組成式を満足する物質である。
図3は本発明に係る誘電体セラミック物質の走査電子顕微鏡による写真であって、同写真から層状構造を有していることが確認でき且つ板状の粒子を形成したことが示されている。
次いで、実施例1で得られたHSr2(1−x)Bi2xNb3O10+δセラミック物質を利用し、H+:TBA+=1:1の比でテトラブチルアンモニウム水酸化物を添加して室温で7日間撹拌反応させ、組成式Ca2(1−x)Sr2xNb3O10+δで示されるペロブスカイトナノシートが分散された不透明のコロイド溶液を製作した。
次いで、合成が実施されたセラミックス組成物は、KSr2(1−x)Bi(4/3)xNb3O10で示される(ここで、モル分率xは0<x≦0.3の範囲である。)化学量論的組成式を満足する物質、Sr2(1−x)Bi(4/3)xNb3O10層の間に一層ずつ存在しているK+イオン層を酸溶液にてH+イオン置換することでHSr2(1−x)Bi(4/3)xNb3O10で示される(ここで、モル分率xは0<x≦0.3の範囲である。)組成式を満足する物質である。
Claims (7)
- 下記の化学式1で示される組成を有する高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物。
KSr2(1−x)Bi(y/3)xNb3O10 ・・・(化学式1)
(前記化学式1中、モル分率xは0<x≦0.3、yは4≦y≦6の範囲である。) - 下記の化学式2で示される組成を有する高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物。
HSr2(1−x)Bi(y/3)xNb3O10 ・・・(化学式2)
(前記化学式2中、モル分率xは0<x≦0.3、yは4≦y≦6の範囲である。) - 下記の化学式3で示される組成を有する高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物。
Sr2(1−x)Bi(y/3)xNb3O10 ・・・(化学式3)
(前記化学式3中、モル分率xは0<x≦0.3、yは4≦y≦6の範囲である。) - 請求項1〜3のいずれか一項に記載のニオブ酸ビスマス誘電体組成物を含むナノシート薄膜。
- 請求項1〜3のいずれか一項に記載のニオブ酸ビスマス誘電体組成物を含む積層セラミックコンデンサ。
- 請求項1〜3のいずれか一項に記載のニオブ酸ビスマス誘電体組成物を含むマイクロ波誘電体。
- 請求項1〜3のいずれか一項に記載のニオブ酸ビスマス誘電体組成物を含むコンピュータ用DRAMメモリ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0059870 | 2013-05-27 | ||
KR1020130059870A KR101495093B1 (ko) | 2013-05-27 | 2013-05-27 | 고유전율과 저유전손실 특성을 가지는 비스무트 니오베이트 유전체 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014227335A JP2014227335A (ja) | 2014-12-08 |
JP5855159B2 true JP5855159B2 (ja) | 2016-02-09 |
Family
ID=52127527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014092562A Active JP5855159B2 (ja) | 2013-05-27 | 2014-04-28 | 高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5855159B2 (ja) |
KR (1) | KR101495093B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170045593A (ko) * | 2015-10-19 | 2017-04-27 | 한국과학기술연구원 | 은이 치환된 스트론튬 나이오베이트 유전체 조성물 및 그 제조방법 |
KR102558060B1 (ko) * | 2020-12-02 | 2023-07-25 | 한국과학기술연구원 | 나이오베이트 유전체를 포함하는 나노시트 및 이를 포함하는 유전체 박막 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100381498B1 (ko) * | 1995-05-22 | 2005-02-05 | 미쓰비시 마테리알 가부시키가이샤 | 비스무스계유전체박막및그의형성방법및그박막형성용조성물 |
EP1135797A1 (en) * | 1998-11-23 | 2001-09-26 | Infineon Technologies AG | Textured bi-based oxide ceramic films |
KR20130061176A (ko) * | 2010-10-13 | 2013-06-10 | 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 | 초격자 구조를 갖는 강유전체 박막과 그 제조방법, 및 강유전체 소자와 그 제조방법 |
-
2013
- 2013-05-27 KR KR1020130059870A patent/KR101495093B1/ko active IP Right Grant
-
2014
- 2014-04-28 JP JP2014092562A patent/JP5855159B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014227335A (ja) | 2014-12-08 |
KR101495093B1 (ko) | 2015-03-09 |
KR20140139341A (ko) | 2014-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hu et al. | Optimization the energy density and efficiency of BaTiO3-based ceramics for capacitor applications | |
Hong et al. | Perspectives and challenges in multilayer ceramic capacitors for next generation electronics | |
Guo et al. | High insulation resistivity and ultralow dielectric loss in La-doped SrTiO3 colossal permittivity ceramics through defect chemistry optimization | |
Qin et al. | High energy storage and thermal stability under low electric field in Bi0. 5Na0. 5TiO3-modified BaTiO3-Bi (Zn0. 25Ta0. 5) O3 ceramics | |
KR101398553B1 (ko) | 나이오베이트 유전체 조성물 및 이를 사용하는 나노시트 박막 | |
Diao et al. | Enhanced energy storage properties of BaTiO3 thin films by Ba0. 4Sr0. 6TiO3 layers modulation | |
Qian et al. | Reduced leakage current, enhanced energy storage and dielectric properties in (Ce, Mn)-codoped Ba0. 6Sr0. 4TiO3 thin film | |
Muhammad et al. | Structure and dielectric characteristics of Ba1-xCaxTi1-xCaxO3-δ ceramics | |
Zhang et al. | Simultaneously achieving colossal permittivity, ultralow dielectric loss tangent, and high insulation resistivity in Er-doped SrTiO3 ceramics via oxygen vacancy regulation | |
Qi et al. | Direct synthesis of barium zirconate titanate (BZT) nanoparticles at room temperature and sintering of their ceramics at low temperature | |
Zhang et al. | Excellent energy storage performance of paraelectric Ba0. 4Sr0. 6TiO3 based ceramics through induction of polar nano-regions | |
Shi et al. | Enhanced energy storage performance achieved in Na0. 5Bi0. 5TiO3–Sr0. 7Bi0. 2TiO3 ceramics via domain structure and bandgap width tuning | |
Luo et al. | Wide temperature range of stable dielectric properties in relaxor BaTiO3-based ceramics by co-doping synergistic engineering | |
Shi et al. | Microstructure and colossal dielectric behavior of Ca2TiMnO6 ceramics | |
JP5855159B2 (ja) | 高誘電率と低誘電損失特性を持つニオブ酸ビスマス誘電体組成物 | |
JP6368751B2 (ja) | 銀置換ニオブ酸ストロンチウム誘電体組成物及びその製造方法 | |
CN114388693A (zh) | 电介质材料以及包括其的器件和存储设备 | |
JP2018190956A (ja) | 非強誘電性高誘電体及びその製造方法 | |
Dewi et al. | The effect of heating rate on BaZrxTi1-xO3 thin film for x= 0.4 and x= 0.6 as capacitors | |
Lv et al. | Microstructure and dielectric properties of Na and Ni co-substituted CaCu3Ti4O12 ceramics with high dielectric constant and low loss | |
JP2020152630A (ja) | 低い誘電損失を有する誘電体の製造方法及びそれによって製造される誘電体 | |
Yao et al. | Double pentavalent (Sb5+, Nb5+) and trivalent (Sm3+, Y3+) co-doped Ti0. 9Zr0. 1O2 colossal dielectric permittivity multilayer ceramics for the miniaturization of the next-generation electronics | |
Cheng et al. | Enhanced energy storage properties of (Ba0. 4Sr0. 6) TiO3 ceramics with ultrahigh energy efficiency through doping of Bi0. 2Sr0. 7 (Mg1/3Nb2/3) O3 | |
Yim et al. | Advances in dielectric performance of atomically engineered Sr1. 8Bi0. 2Nb3O10 perovskite nanosheet thin films | |
JP7392015B2 (ja) | 誘電分散のないニオブ酸カルシウムリチウム誘電体組成物及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150304 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150526 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150813 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151117 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5855159 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |