JP5853139B2 - 三次元集積回路設計装置、三次元集積回路設計方法、プログラム - Google Patents
三次元集積回路設計装置、三次元集積回路設計方法、プログラム Download PDFInfo
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- JP5853139B2 JP5853139B2 JP2012542047A JP2012542047A JP5853139B2 JP 5853139 B2 JP5853139 B2 JP 5853139B2 JP 2012542047 A JP2012542047 A JP 2012542047A JP 2012542047 A JP2012542047 A JP 2012542047A JP 5853139 B2 JP5853139 B2 JP 5853139B2
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- 238000013461 design Methods 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 33
- 230000020169 heat generation Effects 0.000 claims description 80
- 230000015572 biosynthetic process Effects 0.000 claims description 79
- 238000003786 synthesis reaction Methods 0.000 claims description 79
- 238000004364 calculation method Methods 0.000 claims description 69
- 238000012546 transfer Methods 0.000 claims description 6
- 238000012938 design process Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 description 30
- 238000010586 diagram Methods 0.000 description 25
- 238000012545 processing Methods 0.000 description 15
- 238000004088 simulation Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009795 derivation Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000003542 behavioural effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/32—Circuit design at the digital level
- G06F30/327—Logic synthesis; Behaviour synthesis, e.g. mapping logic, HDL to netlist, high-level language to RTL or netlist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012542047A JP5853139B2 (ja) | 2011-03-09 | 2012-02-17 | 三次元集積回路設計装置、三次元集積回路設計方法、プログラム |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011052026 | 2011-03-09 | ||
JP2011052026 | 2011-03-09 | ||
JP2012542047A JP5853139B2 (ja) | 2011-03-09 | 2012-02-17 | 三次元集積回路設計装置、三次元集積回路設計方法、プログラム |
PCT/JP2012/001057 WO2012120792A1 (fr) | 2011-03-09 | 2012-02-17 | Dispositif de conception de circuit intégré tridimensionnel, procédé de conception de circuit intégré tridimensionnel et programme |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012120792A1 JPWO2012120792A1 (ja) | 2014-07-17 |
JP5853139B2 true JP5853139B2 (ja) | 2016-02-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012542047A Expired - Fee Related JP5853139B2 (ja) | 2011-03-09 | 2012-02-17 | 三次元集積回路設計装置、三次元集積回路設計方法、プログラム |
Country Status (3)
Country | Link |
---|---|
US (1) | US8566762B2 (fr) |
JP (1) | JP5853139B2 (fr) |
WO (1) | WO2012120792A1 (fr) |
Families Citing this family (178)
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US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
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US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US12100658B2 (en) | 2015-09-21 | 2024-09-24 | Monolithic 3D Inc. | Method to produce a 3D multilayer semiconductor device and structure |
CN115942752A (zh) | 2015-09-21 | 2023-04-07 | 莫诺利特斯3D有限公司 | 3d半导体器件和结构 |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US12016181B2 (en) | 2015-10-24 | 2024-06-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US12035531B2 (en) | 2015-10-24 | 2024-07-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US12120880B1 (en) | 2015-10-24 | 2024-10-15 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11991884B1 (en) | 2015-10-24 | 2024-05-21 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9990454B2 (en) | 2016-06-03 | 2018-06-05 | International Business Machines Corporation | Early analysis and mitigation of self-heating in design flows |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US10204198B2 (en) * | 2017-01-20 | 2019-02-12 | International Business Machines Corporation | Method for efficient localized self-heating analysis using location based deltat analysis |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
WO2020258209A1 (fr) * | 2019-06-28 | 2020-12-30 | Yangtze Memory Technologies Co., Ltd. | Calcul en mémoire dans un dispositif de mémoire tridimensionnel |
US11295053B2 (en) * | 2019-09-12 | 2022-04-05 | Arm Limited | Dielet design techniques |
CN115421429B (zh) * | 2022-09-26 | 2024-04-26 | 深圳安森德半导体有限公司 | 一种模拟芯片电路设计系统及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06268067A (ja) * | 1993-03-16 | 1994-09-22 | Dainippon Printing Co Ltd | Lsi設計用cadシステム |
JP2002141471A (ja) * | 2000-11-01 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 半導体集積回路設計方法と半導体集積回路 |
US20090024969A1 (en) * | 2004-01-28 | 2009-01-22 | Rajit Chandra | Semiconductor chip design having thermal awareness across multiple sub-system domains |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8286111B2 (en) * | 2004-03-11 | 2012-10-09 | Gradient Design Automation Inc. | Thermal simulation using adaptive 3D and hierarchical grid mechanisms |
EP1960921A1 (fr) * | 2005-12-17 | 2008-08-27 | Gradient Design Automation, Inc. | Simulation de répartitions de température de circuit intégré effectuée au moyen d'un quadrillage 3d adaptatif |
US8273610B2 (en) * | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH06268067A (ja) * | 1993-03-16 | 1994-09-22 | Dainippon Printing Co Ltd | Lsi設計用cadシステム |
JP2002141471A (ja) * | 2000-11-01 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 半導体集積回路設計方法と半導体集積回路 |
US20090024969A1 (en) * | 2004-01-28 | 2009-01-22 | Rajit Chandra | Semiconductor chip design having thermal awareness across multiple sub-system domains |
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