JP5853139B2 - 三次元集積回路設計装置、三次元集積回路設計方法、プログラム - Google Patents

三次元集積回路設計装置、三次元集積回路設計方法、プログラム Download PDF

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JP5853139B2
JP5853139B2 JP2012542047A JP2012542047A JP5853139B2 JP 5853139 B2 JP5853139 B2 JP 5853139B2 JP 2012542047 A JP2012542047 A JP 2012542047A JP 2012542047 A JP2012542047 A JP 2012542047A JP 5853139 B2 JP5853139 B2 JP 5853139B2
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integrated circuit
temperature
standard cell
multilayer chip
circuit design
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JPWO2012120792A1 (ja
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高志 森本
高志 森本
橋本 隆
隆 橋本
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Panasonic Intellectual Property Management Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/32Circuit design at the digital level
    • G06F30/327Logic synthesis; Behaviour synthesis, e.g. mapping logic, HDL to netlist, high-level language to RTL or netlist
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2012542047A 2011-03-09 2012-02-17 三次元集積回路設計装置、三次元集積回路設計方法、プログラム Expired - Fee Related JP5853139B2 (ja)

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JP2012542047A JP5853139B2 (ja) 2011-03-09 2012-02-17 三次元集積回路設計装置、三次元集積回路設計方法、プログラム

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JP2011052026 2011-03-09
JP2011052026 2011-03-09
JP2012542047A JP5853139B2 (ja) 2011-03-09 2012-02-17 三次元集積回路設計装置、三次元集積回路設計方法、プログラム
PCT/JP2012/001057 WO2012120792A1 (fr) 2011-03-09 2012-02-17 Dispositif de conception de circuit intégré tridimensionnel, procédé de conception de circuit intégré tridimensionnel et programme

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JPWO2012120792A1 JPWO2012120792A1 (ja) 2014-07-17
JP5853139B2 true JP5853139B2 (ja) 2016-02-09

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Publication number Priority date Publication date Assignee Title
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US9385088B2 (en) 2009-10-12 2016-07-05 Monolithic 3D Inc. 3D semiconductor device and structure
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US11984445B2 (en) 2009-10-12 2024-05-14 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US12027518B1 (en) 2009-10-12 2024-07-02 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
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US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
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US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
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US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
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US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
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US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US8701066B1 (en) * 2012-06-28 2014-04-15 Cadence Design Systens, Inc. Extracting capacitance and resistance from FinFET devices
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
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US11978731B2 (en) 2015-09-21 2024-05-07 Monolithic 3D Inc. Method to produce a multi-level semiconductor memory device and structure
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US12035531B2 (en) 2015-10-24 2024-07-09 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
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US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US10204198B2 (en) * 2017-01-20 2019-02-12 International Business Machines Corporation Method for efficient localized self-heating analysis using location based deltat analysis
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
WO2020258209A1 (fr) * 2019-06-28 2020-12-30 Yangtze Memory Technologies Co., Ltd. Calcul en mémoire dans un dispositif de mémoire tridimensionnel
US11295053B2 (en) * 2019-09-12 2022-04-05 Arm Limited Dielet design techniques
CN115421429B (zh) * 2022-09-26 2024-04-26 深圳安森德半导体有限公司 一种模拟芯片电路设计系统及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268067A (ja) * 1993-03-16 1994-09-22 Dainippon Printing Co Ltd Lsi設計用cadシステム
JP2002141471A (ja) * 2000-11-01 2002-05-17 Matsushita Electric Ind Co Ltd 半導体集積回路設計方法と半導体集積回路
US20090024969A1 (en) * 2004-01-28 2009-01-22 Rajit Chandra Semiconductor chip design having thermal awareness across multiple sub-system domains

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8286111B2 (en) * 2004-03-11 2012-10-09 Gradient Design Automation Inc. Thermal simulation using adaptive 3D and hierarchical grid mechanisms
EP1960921A1 (fr) * 2005-12-17 2008-08-27 Gradient Design Automation, Inc. Simulation de répartitions de température de circuit intégré effectuée au moyen d'un quadrillage 3d adaptatif
US8273610B2 (en) * 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268067A (ja) * 1993-03-16 1994-09-22 Dainippon Printing Co Ltd Lsi設計用cadシステム
JP2002141471A (ja) * 2000-11-01 2002-05-17 Matsushita Electric Ind Co Ltd 半導体集積回路設計方法と半導体集積回路
US20090024969A1 (en) * 2004-01-28 2009-01-22 Rajit Chandra Semiconductor chip design having thermal awareness across multiple sub-system domains

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