JP5845083B2 - ドープされた相変化材料を形成するための複合ターゲットのスパッタリング - Google Patents
ドープされた相変化材料を形成するための複合ターゲットのスパッタリング Download PDFInfo
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- JP5845083B2 JP5845083B2 JP2011279681A JP2011279681A JP5845083B2 JP 5845083 B2 JP5845083 B2 JP 5845083B2 JP 2011279681 A JP2011279681 A JP 2011279681A JP 2011279681 A JP2011279681 A JP 2011279681A JP 5845083 B2 JP5845083 B2 JP 5845083B2
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- 239000012782 phase change material Substances 0.000 title claims description 87
- 238000004544 sputter deposition Methods 0.000 title claims description 78
- 239000002131 composite material Substances 0.000 title description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 105
- 239000010703 silicon Substances 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 76
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 53
- 239000000654 additive Substances 0.000 claims description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 49
- 229910052760 oxygen Inorganic materials 0.000 claims description 49
- 239000001301 oxygen Substances 0.000 claims description 49
- 230000008859 change Effects 0.000 claims description 47
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 39
- 230000000996 additive effect Effects 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 5
- -1 by sputtering Chemical compound 0.000 claims description 2
- 238000005477 sputtering target Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims 2
- 230000009257 reactivity Effects 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 99
- 230000008569 process Effects 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000000203 mixture Substances 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 150000004770 chalcogenides Chemical class 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000956 alloy Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 229910052714 tellurium Inorganic materials 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 150000001786 chalcogen compounds Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000004154 testing of material Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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Description
110、310、410 活性領域
116 メモリ素子
120 第一電極
122、322、417 幅
130、330 誘電体層
140 第二電極(又は上部電極)
150 チャンバー(又はスパッタチャンバー)
151 スパッタターゲット
152 基板
153 不活性ガス供給源
154 反応性ガス供給源
155 真空ポンプ
156 電源及びコントローラ
157 コリメータ
170 スパッタプレート
171 背板
201、202、203、204、205、206、207、211、212、213、214、215、216、217、218、221、222、223、224、225、226、227、228、229、231、232、233、234、235、236、237、238、239、600、610、620、630 工程
312 双層
312A 第一相変化材料層
312B 第二相変化材料層
320 下部電極
340 上部電極
413 不活性領域
416、516 メモリ素子
420、520 第一電極
422 上表面
424 下表面
440、540 第二電極
510 活性領域
710 集積回路
712 メモリアレイ
714 ワード線デコーダとドライバ(又はワード線デコーダ)
716 複数のワード線
718 ビット線デコーダ
720 複数のビット線
722 バス
724 ブロック
726 データバス
728 データ入力線
730 他の回路
732 データ出力線
734 コントローラ
736 バイアス回路の電圧及び電流源
Claims (24)
- 基板に下部電極構造を形成する工程と、
酸素または窒素を含まず、窒素又は酸素と反応するための30原子%〜60原子%のケイ素及び二つ以上の元素を含む相変化材料を含んでいるスパッタターゲットを使用し、スパッタリングにより、ケイ素またはケイ素系添加剤を有する相変化メモリ材料層を前記下部電極に形成する工程と、
前記メモリ材料層上に上部電極を形成する工程と、
を備えていることを特徴とするメモリセルを形成する方法。 - 前記スパッタターゲットと前記基板をチャンバーに装着する工程と、
前記チャンバーに酸素または窒素を加えながら前記チャンバーにスパッタリングを誘発する条件を適用する工程と、
を備えていることを特徴とする請求項1に記載のメモリセルを形成する方法。 - 前記スパッタターゲットと前記基板をチャンバーに装着する工程と、
前記チャンバーに酸素を加えながら前記チャンバーにスパッタリングを誘発する条件を適用し、前記チャンバー内の酸素濃度と前記ターゲットのケイ素濃度が前記相変化メモリ材料層の酸化シリコンと成る工程と、
を備え、前記相変化メモリ材料層のケイ素濃度は、4原子%〜6原子%であることを特徴とする請求項1に記載のメモリセルを形成する方法。 - 前記スパッタターゲットと前記基板をチャンバーに装着する工程と、
第一時間間隔において前記チャンバーにスパッタリングを誘発する条件を適用し、且つ前記第一時間間隔に続く第二時間間隔において、前記チャンバーに酸素または窒素を加えることを含む工程と、
を備えていることを特徴とする請求項1に記載のメモリセルを形成する方法。 - 前記スパッタターゲットと前記基板をチャンバーに装着する工程と、
処理時間間隔において、前記チャンバーにスパッタリングを誘発する条件を適用し、且つ前記処理時間間隔において、ケイ素との反応性のために、選択された反応ガスを前記チャンバーに加えることを含む工程と、を備えていることを特徴とする請求項1に記載のメモリセルを形成する方法。 - 前記処理時間間隔において、前記反応ガスの濃度を変える工程
を備えていることを特徴とする請求項5に記載のメモリセルを形成する方法。 - 前記スパッタターゲットは、40原子%〜60原子%のケイ素を含んでいることを特徴とする請求項1に記載のメモリセルを形成する方法。
- 酸素または窒素を含まず、窒素又は酸素と反応するための30原子%〜60原子%のケイ素及び二つ以上の元素を含む相変化材料を含んでいるスパッタターゲットを使用し、スパッタリングにより、材料層を形成する工程を備えていることを特徴とするドープされた相変化材料層を形成する方法。
- 前記スパッタターゲットをチャンバーに装着する工程と、
前記チャンバーに酸素または窒素を加えながら前記チャンバーにスパッタリングを誘発する条件を適用する工程と、
を備えていることを特徴とする請求項8に記載のドープされた相変化材料層を形成する方法。 - 前記スパッタターゲットをチャンバーに装着する工程と、
第一時間間隔において前記チャンバーにスパッタリングを誘発する条件を適用し、且つ前記第一時間間隔に続く第二時間間隔において、前記チャンバーに酸素または窒素を加えることを含む工程と、
を備えていることを特徴とする請求項8に記載のドープされた相変化材料層を形成する方法。 - 前記スパッタターゲットをチャンバーに装着する工程と、
処理時間間隔において、前記チャンバーにスパッタリングを誘発する条件を適用し、且つ前記処理時間間隔において、ケイ素との反応性のために、選択された反応ガスを前記チャンバーに加えることを含む工程と、を備えていることを特徴とする請求項8に記載のドープされた相変化材料層を形成する方法。 - 前記処理時間間隔において、前記反応ガスの濃度を変える工程
を備えていることを特徴とする請求項8に記載のドープされた相変化材料層を形成する方法。 - 前記スパッタターゲットは、40原子%〜60原子%のケイ素を含んでいることを特徴とする請求項8に記載のドープされた相変化材料層を形成する方法。
- 酸素または窒素を含まないスパッタターゲットであって、相変化メモリ材料及び窒素又は酸素と反応するための30原子%〜60原子%のケイ素を備えていることを特徴とするスパッタターゲット。
- 前記スパッタターゲットは、40原子%〜60原子%のケイ素を含んでいることを特徴とする請求項14に記載のスパッタターゲット。
- 前記スパッタターゲットは、GexSbyTezを含んでいることを特徴とする請求項14に記載のスパッタターゲット。
- 前記スパッタターゲットは、GexSbyTezを含み、
前記x、前記y及び前記zのそれぞれは、2、2及び5であることを特徴とする請求項14に記載のスパッタターゲット。 - 相変化メモリ素子を含む集積回路であって、
前記相変化メモリ素子は、ケイ素又はケイ素系添加剤を有する相変化材料層を含み、
前記相変化材料層は、相変化材料と窒素又は酸素と反応するためのケイ素を含んで酸素または窒素を含まないスパッタターゲットを使用して製造され、
前記ケイ素は、スパッタターゲットにおいて30原子%〜60原子%の濃度を有することを特徴とする集積回路。 - 前記スパッタターゲットは、GexSbyTezを含んでいることを特徴とする請求項18に記載のスパッタターゲット。
- 酸素や窒素とケイ素との反応によって形成された誘電体添加剤により、相変化材料層を形成する方法であって、
前記相変化材料層に特定された濃度よりも5倍以上の濃度のケイ素を有し、二つ以上の元素を含む相変化材料を含むスパッタターゲットを、チャンバーに装着する工程であって、前記スパッタターゲットは、30原子%〜60原子%のケイ素を含み、酸素または窒素を含まない前記工程と、
基板を前記チャンバーに装着する工程と、
前記チャンバーにスパッタリングを誘発する条件を適用する工程と、
前記チャンバーに酸素及び窒素のいずれかまたは両方を加えながら前記チャンバーにスパッタリングを誘発する前記条件を適用する工程と、
を備えていることを特徴とする相変化材料層を形成する方法。 - 相変化メモリ材料層を形成するためのスパッタターゲットであって、
前記相変化メモリ材料層は、ケイ素の特定された濃度を有し、
前記ケイ素は、酸素や窒素と反応して誘電体を形成し、
前記スパッタターゲットは、酸素または窒素を含まず、相変化材料と30原子%〜60原子%のケイ素を含み、
前記スパッタターゲットが含むケイ素は、前記相変化材料層に前記特定された濃度よりも5倍以上の濃度を有することを特徴とするスパッタターゲット。 - 相変化メモリ素子を含む集積回路であって、
前記相変化メモリ素子は、相変化材料層と誘電体を含み、
前記誘電体は、窒素又は酸素の化合物及び窒素又は酸素と反応するケイ素を含み、
前記ケイ素は、前記相変化材料層に特定された濃度を有し、
前記相変化材料層は、相変化材料と30原子%〜60原子%のケイ素を含み、酸素または窒素を含まないスパッタターゲットを使用して製造され、
前記スパッタターゲットが含むケイ素は、前記相変化材料層に前記特定された濃度よりも5倍以上の濃度を有することを特徴とする集積回路。 - 前記スパッタターゲットは、GexSbyTezを含んでいることを特徴とする請求項22に記載の集積回路。
- 前記相変化材料層及び前記誘電体は、6原子%以上の酸化シリコンを含んでいることを特徴とする請求項22に記載の集積回路。
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