JP5842178B2 - 光源装置および照明装置 - Google Patents
光源装置および照明装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5022—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with vitreous materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/86—Glazes; Cold glazes
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Description
前記ガラス組成物は、P 2 O 5 −ZnO−SnO−Al 2 O 3 系であり、Sbを不含有とするガラス組成物であって、酸化物基準のモル%で、(a)30%以上50%以下のP2O5と、(b)10%以上50%以下のZnOと、(c)0.1%以上10%以下のAl2O3と、(d)5%以上50%以下のLi2Oと、(e)0%以上50%以下のNa2Oと、(f)0%以上50%以下のK2Oと、(g)0%以上20%以下のMgOと、(h)0%以上20%以下のCaOと、(i)0%以上20%以下のSrOと、(j)0%以上20%以下のBaOと、(k)0%を超え20%以下のSnOと、(l)0%以上5%以下のB2O3と、を含み、実質的にZrO2およびAg2Oを含まず、前記(a)と(b)との比率(a)/(b)が0.2以上2.0以下である、ことを特徴とする。
[ガラス組成物]
本発明に係るガラス組成物は、酸化物基準のモル%で、(a)30%以上50%以下のP2O5と、(b)25%以上65%以下のZnOと、(c)0.1%以上10%以下のAl2O3と、(d)0%以上50%以下のLi2Oと、(e)0%以上50%以下のNa2Oと、(f)0%以上50%以下のK2Oと、(g)0%以上20%以下のMgOと、(h)0%以上20%以下のCaOと、(i)0%以上20%以下のSrOと、(j)0%以上20%以下のBaOと、(k)0%以上20%以下のSnOと、(l)0%以上5%以下のB2O3と、を含み、実質的にZrO2およびAg2Oを含まず、(a)と(b)との比率(a)/(b)が0.2以上2.0以下である、ことを特徴とする。
図1に示すように、本発明に係る光源装置10の一例は、基板11と、半導体発光素子12と、この半導体発光素子12を被覆するガラス組成物13と、半導体発光素子12の表面を覆うように形成された蛍光体層14と、を有する。
グローブ102は、LEDモジュール101である光源装置が内部に配置された筐体であって、ランプの外形を構成する部材である。ランプの構成部材であるという観点から、グローブ102は、透光性の材料で形成されていることが好ましく、具体的には、アクリル樹脂を代表とする樹脂または、シリカガラスを代表とするガラス組成物などが用いられる。本実施形態では、可視光に対して透明なシリカガラス製の中空部材を使用する。このように、可視光に対して透明なシリカガラス製のグローブ102を採用すると、本グローブ102内に収納されたLEDモジュール101をグローブ102の外側から視認することができるため、白熱電球の外観性と類似する電球形LEDランプを得ることができるほか、LEDモジュール101から発せられた光がグローブ102によって損失することが抑制されるので、結果として光束の高い電球形LEDランプを得ることができる。また、樹脂ではなくガラス製(シリカガラスを含む)のグローブ102を採用すれば、高い耐熱性を有するので、非常灯用などにも有用である。
ステム104は、グローブ102の開口部からグローブ102内に向かって延びるように設けられている。具体的には、ステム104の一端には、LEDモジュール101の近傍までZ軸方向に延びる棒状の延伸部が形成されている。つまり、本実施形態に係るステム104は、一般的な白熱電球に用いられるステムがグローブ102の内方に延伸されたような部材である。なお、ステム104は、一般的な白熱電球に用いられるステムであっても構わない。
本発明でいう、光源装置として機能するLEDモジュール101は、電力供給用部材として機能する2本のリード線105によってグローブ102内部の空中に位置するように支持された状態で、グローブ102の内部に収納されている。また、LEDモジュール101は、複数の半導体発光素子108が実装された面をグローブ102の頂部に(Z方向の正の向きに)向けて配置される。点灯時には、2本のリード線105からLEDモジュール101に対して電力が供給され、LEDモジュール101の各半導体発光素子が発光する。
11 基板
12 半導体発光素子
13 ガラス組成物
14 蛍光体層
15 配線
100 ランプ
101 モジュール
102 グローブ
103 口金
104 ステム
105 リード線
106 基板
107 ワイヤ
108 半導体発光素子
109 封止材
200 ランプ
201 筐体
202 モジュール
203 基台
204,205 口金
Claims (6)
- 基板と、
ガラス組成物で封止された状態で前記基板上に実装された半導体発光素子と、
を有し、
前記ガラス組成物は、P2O5−ZnO−SnO−Al2O3系であり、Sbを不含有とするガラス組成物であって、
酸化物基準のモル%で、
(a)30%以上50%以下のP2O5と、(b)10%以上50%以下のZnOと、(c)0.1%以上10%以下のAl2O3と、(d)5%以上50%以下のLi2Oと、(e)0%以上50%以下のNa2Oと、(f)0%以上50%以下のK2Oと、(g)0%以上20%以下のMgOと、(h)0%以上20%以下のCaOと、(i)0%以上20%以下のSrOと、(j)0%以上20%以下のBaOと、(k)0%を超え20%以下のSnOと、(l)0%以上5%以下のB2O3と、
を含み、実質的にZrO2およびAg2Oを含まず、
前記(a)と(b)との比率(a)/(b)が0.2以上2.0以下である、
ことを特徴とする光源装置。 - 前記(a)と(b)との合計量がモル%で90%以下である、ことを特徴とする、請求項1に記載の光源装置。
- 前記基板がセラミックス製である、ことを特徴とする請求項1または2に記載の光源装置。
- 前記ガラス組成物が蛍光物質を含む、ことを特徴とする請求項3に記載の光源装置。
- 請求項1〜4のいずれかひとつに記載の光源装置と、
前記光源装置が内部に配置された筐体と、
前記筐体に取り付けられた口金と、
を備えることを特徴とする照明装置。 - 前記筐体が、透光性の部材で形成されている、
ことを特徴とする請求項5に記載の照明装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2012511543A JP5842178B2 (ja) | 2010-04-19 | 2011-04-19 | 光源装置および照明装置 |
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Application Number | Priority Date | Filing Date | Title |
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JP2010095681 | 2010-04-19 | ||
JP2010095681 | 2010-04-19 | ||
PCT/JP2011/002271 WO2011132402A1 (ja) | 2010-04-19 | 2011-04-19 | ガラス組成物、光源装置および照明装置 |
JP2012511543A JP5842178B2 (ja) | 2010-04-19 | 2011-04-19 | 光源装置および照明装置 |
Publications (2)
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JPWO2011132402A1 JPWO2011132402A1 (ja) | 2013-07-18 |
JP5842178B2 true JP5842178B2 (ja) | 2016-01-13 |
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Country | Link |
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US (1) | US8536787B2 (ja) |
EP (1) | EP2562147A4 (ja) |
JP (1) | JP5842178B2 (ja) |
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US9780268B2 (en) * | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
CN102803170A (zh) * | 2010-04-19 | 2012-11-28 | 松下电器产业株式会社 | 玻璃组合物、光源装置以及照明装置 |
US10158057B2 (en) | 2010-10-28 | 2018-12-18 | Corning Incorporated | LED lighting devices |
EP2632868A1 (en) | 2010-10-28 | 2013-09-04 | Corning Incorporated | Phosphor containing glass frit materials for led lighting applications |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
KR101612216B1 (ko) | 2012-03-30 | 2016-04-12 | 코닝 인코포레이티드 | Led 형광체용 비스무트 보레이트 유리 캡슐화제 |
US10017849B2 (en) | 2012-11-29 | 2018-07-10 | Corning Incorporated | High rate deposition systems and processes for forming hermetic barrier layers |
US9202996B2 (en) | 2012-11-30 | 2015-12-01 | Corning Incorporated | LED lighting devices with quantum dot glass containment plates |
US10439109B2 (en) | 2013-08-05 | 2019-10-08 | Corning Incorporated | Luminescent coatings and devices |
KR102408619B1 (ko) * | 2015-02-16 | 2022-06-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지, 발광 소자 패키지 제조 방법 및 광원 유닛 |
WO2016139954A1 (en) * | 2015-03-05 | 2016-09-09 | Nichia Corporation | Light emitting device |
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- 2011-04-19 JP JP2012511543A patent/JP5842178B2/ja active Active
- 2011-04-19 US US13/636,225 patent/US8536787B2/en not_active Expired - Fee Related
- 2011-04-19 EP EP11771745.4A patent/EP2562147A4/en not_active Withdrawn
- 2011-04-19 WO PCT/JP2011/002271 patent/WO2011132402A1/ja active Application Filing
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EP2562147A4 (en) | 2013-09-18 |
US20130015761A1 (en) | 2013-01-17 |
CN102858704A (zh) | 2013-01-02 |
JPWO2011132402A1 (ja) | 2013-07-18 |
WO2011132402A1 (ja) | 2011-10-27 |
CN102858704B (zh) | 2016-02-17 |
US8536787B2 (en) | 2013-09-17 |
EP2562147A1 (en) | 2013-02-27 |
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