JP5828768B2 - 保護回路 - Google Patents
保護回路 Download PDFInfo
- Publication number
- JP5828768B2 JP5828768B2 JP2012000795A JP2012000795A JP5828768B2 JP 5828768 B2 JP5828768 B2 JP 5828768B2 JP 2012000795 A JP2012000795 A JP 2012000795A JP 2012000795 A JP2012000795 A JP 2012000795A JP 5828768 B2 JP5828768 B2 JP 5828768B2
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- Prior art keywords
- circuit
- terminal
- transformer
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- protection circuit
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- 239000003990 capacitor Substances 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 16
- 230000003071 parasitic effect Effects 0.000 description 15
- 238000005513 bias potential Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Description
図1は本発明の第1の実施形態に係る保護回路を設けた無線回路の構成を示す図である。本実施形態の保護回路は、オンチップ回路7の入出力整合回路として、二つのインダクタを有し4つの端子を持つトランスフォーマ11を備える。なお、トランスフォーマ11は、互いに絶縁され磁気結合する2つのインダクタを含めば、2巻線に限らず、例えば、回路構成、実装可能な占有面積の状況により、使用可能であれば3巻線以上としてもよい。
端子側インダクタ11fと回路側インダクタ11gとは同一面の層において形成される。回路側インダクタ11gの端部は、端子側インダクタ11fを迂回し、接続導体を介して配線層11hの一端と接続され、配線層11hの他端が接続導体を介して端子11c、11dと接続される。
図9は本発明の第2の実施形態に係る保護回路を設けた無線回路の構成を示す図である。第1の実施形態においてはシングル構成のオンチップ回路を想定していたが、差動構成のオンチップ回路に対しても適用できる。第2の実施形態では差動構成の例を示す。
2 低雑音増幅器
3 ESDダイオード回路
7、7a、7b オンチップ回路
8 AC接地用容量
9 抵抗
11、15 トランスフォーマ
11a、11b、11c、11d、15a、15b、15c、15d 端子
11f、15f 端子側インダクタ
11g、15g 回路側インダクタ
11h 配線層
12 トランジスタ
13 伝送線路
14 容量
15e 中点端子
16 電力増幅器
18 バイアス電源回路
19 バイアス電源端子
Claims (5)
- 電子回路の端子部と前記電子回路の入力または出力との間に設けた、磁気結合される複数のインダクタを有するトランスフォーマを備え、
前記トランスフォーマの端子側インダクタは、一端が前記端子部に接続され、他端が接地され、
前記トランスフォーマの回路側インダクタは、一端が前記電子回路の入力または出力に接続され、他端が前記電子回路のバイアス電源回路に接続され、
前記回路側インダクタの他端と前記バイアス電源回路との間に、ダイオードを直列接続して一端を電源に接続し、他端を接地したESD保護回路を設けた、保護回路。 - 電子回路の端子部と前記電子回路の入力または出力との間に、磁気結合される複数のインダクタを有するトランスフォーマを備え、
前記トランスフォーマの端子側インダクタは、一端が前記端子部に接続され、他端が接地され、
前記電子回路は差動構成の回路であり、
前記トランスフォーマの回路側インダクタは、中点端子を有し、一端が前記差動構成の一方の電子回路の入力または出力に接続され、他端が前記差動構成の他方の電子回路の入力または出力に接続され、前記中点端子が前記電子回路のバイアス電源回路に接続され、
前記回路側インダクタの他端と前記バイアス電源回路との間に、ダイオードを直列接続して一端を電源に接続し、他端を接地したESD保護回路を設けた、保護回路。 - 請求項1又は2に記載の保護回路であって、
前記端子側インダクタの他端と接地用グランドとの間に、前記ESD保護回路を設け、前記直列接続したダイオード間の接続点を、容量を介して接地した、保護回路。 - 請求項1から3のいずれか一項に記載の保護回路であって、
前記電子回路は無線装置の受信部に設けられる低雑音増幅器であり、
前記トランスフォーマは、前記端子部と前記低雑音増幅器の入力との間に設けられる、保護回路。 - 請求項1から3のいずれか一項に記載の保護回路であって、
前記電子回路は無線装置の送信部に設けられる電力増幅器であり、
前記トランスフォーマは、前記端子部と前記電力増幅器の出力との間に設けられる、保護回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012000795A JP5828768B2 (ja) | 2012-01-05 | 2012-01-05 | 保護回路 |
US14/236,433 US9276400B2 (en) | 2012-01-05 | 2012-12-11 | Protection circuit |
PCT/JP2012/007909 WO2013102971A1 (ja) | 2012-01-05 | 2012-12-11 | 保護回路 |
CN201280032461.6A CN103635995B (zh) | 2012-01-05 | 2012-12-11 | 保护电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012000795A JP5828768B2 (ja) | 2012-01-05 | 2012-01-05 | 保護回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013140899A JP2013140899A (ja) | 2013-07-18 |
JP5828768B2 true JP5828768B2 (ja) | 2015-12-09 |
Family
ID=48745048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012000795A Expired - Fee Related JP5828768B2 (ja) | 2012-01-05 | 2012-01-05 | 保護回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9276400B2 (ja) |
JP (1) | JP5828768B2 (ja) |
CN (1) | CN103635995B (ja) |
WO (1) | WO2013102971A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI419631B (zh) * | 2011-12-05 | 2013-12-11 | Au Optronics Corp | 多層電路板以及靜電放電保護結構 |
JP6476016B2 (ja) | 2015-03-09 | 2019-02-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路、通信モジュール、及びスマートメータ |
JP2016171163A (ja) * | 2015-03-12 | 2016-09-23 | ルネサスエレクトロニクス株式会社 | 半導体集積回路、通信モジュール、及びスマートメータ |
US9698594B2 (en) * | 2015-11-10 | 2017-07-04 | Analog Devices Global | Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device |
US10637234B2 (en) * | 2016-06-22 | 2020-04-28 | International Business Machines Corporation | ESD protection circuit |
EP3591996A1 (en) * | 2018-07-03 | 2020-01-08 | Oticon A/s | A hearing device including an external antenna part and an internal antenna part |
US10582317B2 (en) | 2016-12-29 | 2020-03-03 | Oticon A/S | Hearing device including an external antenna part and an internal antenna part |
US20210057404A1 (en) * | 2019-08-22 | 2021-02-25 | Qualcomm Incorporated | On-die electrostatic discharge protection |
CN110995310B (zh) * | 2019-12-25 | 2021-09-17 | 上海晶曦微电子科技有限公司 | 一种射频前端电路及其控制方法 |
WO2023153984A1 (en) * | 2022-02-09 | 2023-08-17 | Fingerprint Cards Anacatum Ip Ab | Biometric smartcard comprising integrated esd-protection |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7081796B2 (en) * | 2003-09-15 | 2006-07-25 | Silicon Laboratories, Inc. | Radio frequency low noise amplifier with automatic gain control |
JP2006186596A (ja) | 2004-12-27 | 2006-07-13 | Hitachi Media Electoronics Co Ltd | アンテナ共用装置およびそれを用いた無線通信端末 |
CN103956977A (zh) * | 2005-12-02 | 2014-07-30 | Nxp股份有限公司 | 低噪声放大器 |
TW200729697A (en) | 2005-12-26 | 2007-08-01 | Toshiba Kk | Power amplifier |
JP4768591B2 (ja) | 2005-12-26 | 2011-09-07 | 株式会社東芝 | 電力増幅器 |
US20080112101A1 (en) * | 2006-11-15 | 2008-05-15 | Mcelwee Patrick T | Transmission line filter for esd protection |
US8073417B2 (en) * | 2006-12-06 | 2011-12-06 | Broadcom Corporation | Method and system for a transformer-based high performance cross-coupled low noise amplifier |
US8362481B2 (en) * | 2007-05-08 | 2013-01-29 | Scanimetrics Inc. | Ultra high speed signal transmission/reception |
WO2009076431A1 (en) * | 2007-12-11 | 2009-06-18 | California Micro Devices Corporation | Impedance compensated esd circuit for protection for high-speed interfaces and method of using the same |
US7973365B2 (en) * | 2008-01-25 | 2011-07-05 | Infineon Technologies Ag | Integrated RF ESD protection for high frequency circuits |
US8483627B2 (en) * | 2008-05-09 | 2013-07-09 | Texas Instruments Incorporated | Circuits, processes, devices and systems for full integration of RF front end module including RF power amplifier |
US8306494B2 (en) * | 2008-08-14 | 2012-11-06 | Broadcom Corporation | Method and system for a single-ended input low noise amplifier with differential output |
US7894173B2 (en) * | 2008-09-16 | 2011-02-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Enhancing bandwidth of ESD network using transformers |
US8076996B2 (en) * | 2009-02-10 | 2011-12-13 | Electronics And Telecommunications Research Institute | Hybrid balun apparatus |
JP5582134B2 (ja) * | 2009-02-20 | 2014-09-03 | 日本電気株式会社 | 受信回路及び信号受信方法 |
WO2010119625A1 (ja) * | 2009-04-13 | 2010-10-21 | 日本電気株式会社 | 半導体装置及びそのテスト方法 |
JP5348050B2 (ja) | 2010-03-30 | 2013-11-20 | 富士通株式会社 | 雑音発生回路及び受信回路 |
US9294151B2 (en) * | 2012-12-12 | 2016-03-22 | Oceaneering International, Inc. | Wireless data transmission via inductive coupling using di/dt as the magnetic modulation scheme and hysteresis |
US9300260B2 (en) * | 2013-03-15 | 2016-03-29 | Rf Micro Devices, Inc. | Transformer-based power amplifier stabilization and reference distortion reduction |
-
2012
- 2012-01-05 JP JP2012000795A patent/JP5828768B2/ja not_active Expired - Fee Related
- 2012-12-11 CN CN201280032461.6A patent/CN103635995B/zh not_active Expired - Fee Related
- 2012-12-11 WO PCT/JP2012/007909 patent/WO2013102971A1/ja active Application Filing
- 2012-12-11 US US14/236,433 patent/US9276400B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2013102971A1 (ja) | 2013-07-11 |
CN103635995A (zh) | 2014-03-12 |
US9276400B2 (en) | 2016-03-01 |
JP2013140899A (ja) | 2013-07-18 |
CN103635995B (zh) | 2017-05-24 |
US20140168834A1 (en) | 2014-06-19 |
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