JP5826693B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Description

  Embodiments described herein relate generally to a method for manufacturing a semiconductor light emitting device.

  Nitride semiconductors such as gallium nitride (GaN) make use of the characteristic of having a wide band gap, and light emitting diodes (LED: Light Emitting Diodes) of ultraviolet, blue, or green, and laser diodes (LD: Laser) of blue-violet or blue. Diode).

  In a semiconductor light emitting device, there is a configuration in which an electrode provided on a translucent electrode includes a pedestal electrode and an auxiliary electrode extending from the pedestal electrode. The base electrode can be used as, for example, a bonding pad electrode. The auxiliary electrode has a function of uniformly distributing current, for example.

  In a semiconductor light emitting device, it is desired to obtain high bondability and high efficiency.

JP 2001-345480 A

  Embodiments of the present invention provide a method for manufacturing a semiconductor light emitting device having high bondability and high efficiency.

According to the embodiment of the present invention, a method for manufacturing a semiconductor light emitting device including a laminated structure, a first electrode, and a second electrode is provided. The stacked structure includes a first semiconductor layer of a first conductivity type including a nitride semiconductor, a second semiconductor layer of a second conductivity type including a nitride semiconductor, the first semiconductor layer, and the second semiconductor layer. And a light emitting layer including a nitride semiconductor layer. A part of the first semiconductor layer is exposed on the second main surface of the stacked structure on the second semiconductor layer side. The first electrode is in contact with the first semiconductor layer on the second main surface side. The second electrode is in contact with the second semiconductor layer on the second main surface side, and includes a first conductive layer, a second conductive layer, and a reflective third conductive layer. The manufacturing method, on the second semiconductor layer has a transparency to light emission emitted from the light emitting layer, at 100 nm or more 250 nm or less, have a uniform thickness, and forming a first conductive layer Ru spread current. The manufacturing method has a reflectance higher than a reflectance of the second conductive layer with respect to the light emission on a part of the first conductive layer and the exposed part of the first semiconductor layer. And processing the high-reflection conductive film to form at least a part of the first electrode and the first main layer on the opposite side of the first conductive layer from the second semiconductor layer. An extending portion extending along the surface and having a width in a direction perpendicular to the extending direction and parallel to the first main surface that is not less than 1 micrometer and not more than 50 micrometers, aluminum, Forming the third conductive layer containing at least one of silver and rhodium. In the manufacturing method, at least a part of the extended portion of the third conductive layer is exposed on a part of the first conductive layer, and an adhesion force to the first conductive layer is increased in the third conductive layer. The method further includes forming the second conductive layer having a width greater than 30 micrometers and not more than 80 micrometers along a direction parallel to the first main surface, which is greater than the adhesion to the first conductive layer.

FIG. 1A and FIG. 1B are schematic views showing a semiconductor light emitting device according to an embodiment. FIG. 2A to FIG. 2E are schematic cross-sectional views in order of steps showing the method for manufacturing the semiconductor light emitting device according to the embodiment. FIG. 3A to FIG. 3C are schematic plan views showing other semiconductor light emitting elements according to the embodiment. FIG. 4A and FIG. 4B are schematic plan views showing other semiconductor light emitting elements according to the embodiment. It is a typical sectional view showing another semiconductor light emitting element concerning an embodiment. FIG. 6A and FIG. 6B are schematic cross-sectional views in order of steps showing another method for manufacturing the semiconductor light emitting element according to the embodiment. It is a flowchart figure which shows the manufacturing method of the semiconductor light-emitting device concerning embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the semiconductor light emitting device according to the first embodiment.
1B is a schematic plan view, and FIG. 1A is a cross-sectional view taken along line A1-A2 of FIG. 1B.

  As shown in FIG. 1, the semiconductor light emitting device 110 according to this embodiment includes a stacked structure 10 s, a first conductive layer 51, a second conductive layer 52, and a third conductive layer 53.

  The laminated structure 10s includes a first conductivity type first semiconductor layer 10 including a nitride semiconductor, a second conductivity type second semiconductor layer 20 including a nitride semiconductor, a first semiconductor layer 10, and a second semiconductor layer. And a light emitting layer 30 including a nitride semiconductor layer.

  For example, the first semiconductor layer 10 is n-type, and the second semiconductor layer 20 is p-type. However, the embodiment is not limited thereto, and the first semiconductor layer 10 may be p-type and the second semiconductor layer 20 may be n-type. In the following description, it is assumed that the first semiconductor layer 10 is n-type and the second semiconductor layer 20 is p-type.

In the stacked structure 10s of the semiconductor light emitting device 110, the first semiconductor layer 10, the light emitting layer 30, and the second semiconductor layer 20 are stacked. A direction from the first semiconductor layer 10 toward the second semiconductor layer 20 is defined as a Z-axis direction (first direction).
Here, in the specification of the present application, “lamination” includes not only the case of being stacked in contact with each other but also the case of being stacked with another layer inserted therebetween.

  The light emitting layer 30 includes a plurality of barrier layers 31 and a well layer 32 provided between the plurality of barrier layers 31. For example, the light emitting layer 30 may have a single quantum well (SQW) structure including two barrier layers 31 and a well layer 32 provided between the barrier layers 31. For example, the light emitting layer 30 may have a multiple quantum well (MQW) structure including three or more barrier layers 31 and a well layer 32 provided between the barrier layers 31. it can.

  That is, the light emitting layer 30 includes, for example, (n + 1) barrier layers 31 and n well layers 32 (n is an integer of 1 or more). The i-th barrier layer BLi is provided between the first semiconductor layer 10 and the i-th well layer WLi (i is an integer of 1 to n). The i-th well layer WLi is provided between the i-th barrier layer and the (i + 1) -th barrier layer BL (n + 1). The (n + 1) th barrier layer is provided between the nth well layer WLn and the second semiconductor layer 20.

  The well layer 32 includes, for example, a nitride semiconductor containing indium (In) and gallium (Ga). The band gap energy of the barrier layer 31 is larger than the band gap energy of the well layer 32. The barrier layer 31 may or may not contain In. When the barrier layer 31 contains In, the In composition ratio in the group III element of the barrier layer 31 is lower than the In composition ratio in the group III element of the well layer 32.

For example, an In _0.02 Ga _0.98 N layer is used as the barrier layer 31. The thickness of the barrier layer 31 is, for example, 12.5 nanometers (nm). As the well layer 32, an undoped In _0.2 Ga _0.8 N layer is used. The thickness of the well layer 32 is, for example, 2.5 nm. The light emitting layer 30 of this specific example is designed so that the photoluminescence wavelength of the light emitting layer 30 at room temperature is 450 nm.

For example, an n-type GaN layer doped with an n-type impurity is used for the first semiconductor layer 10. As the n-type impurity, at least one of Si, Ge, and Sn is used. In this specific example, Si is used as the n-type impurity. The concentration (doping amount) of Si in the first semiconductor layer 10 is, for example, about 2 × 10 ¹⁸ cm ⁻³ .

The second semiconductor layer 20 includes, for example, a first p-type semiconductor layer 21 and a second p-type semiconductor layer 22 provided between the first p-type semiconductor layer 21 and the light emitting layer 30. For example, a p-type GaN layer is used for the second p-type semiconductor layer 22. The thickness of the second p-type semiconductor layer 22 is, for example, about 90 nm. As the p-type impurity, at least one of Mg and Zn can be used. In this specific example, Mg is used as the p-type impurity. The concentration of Mg in the second type semiconductor layer 22 is, for example, 4 × 10 ¹⁸ cm ⁻³ . For example, a p-type GaN layer is used for the first p-type semiconductor layer 21. The first p-type semiconductor layer 21 functions as a contact layer. The thickness of the first p-type semiconductor layer 21 is about 10 nm, for example. The Mg concentration in the first p-type semiconductor layer 21 is, for example, about 1 × 10 ²⁰ cm ⁻³ .

  In the second main surface 10a on the second semiconductor layer 20 side of the stacked structure 10s including the first semiconductor layer 10, the light emitting layer 30, and the second semiconductor layer 20, a part of the first semiconductor layer 10 and one of A part of the light emitting layer 30 corresponding to the part and a part of the second semiconductor layer 20 are removed. The first semiconductor layer 10 is exposed on the second major surface 10a side of the stacked structure 10s on the second semiconductor layer 20 side.

  A first electrode 40 in contact with the first semiconductor layer 10 is provided on the second main surface 10a side of the stacked structure 10s on the second semiconductor layer 20 side.

  In this specific example, the first electrode 40 includes a first n-side conductive film 41, a second n-side conductive film 42 provided between the first n-side conductive film 41 and the first semiconductor layer 10, and a second n-side conductive. A third n-side conductive film 43 provided between the film 42 and the first semiconductor layer 10. For example, a gold film (Au film) is used for the first n-side conductive film 41. The thickness of the first n-side conductive film 41 is, for example, about 0.2 micrometers (μm). For the second n-side conductive film 42, for example, a platinum film (Pt film) is used. The thickness of the second n-side conductive film 42 is, for example, about 0.05 μm. For the third n-side conductive film 43, for example, a titanium film (Ti film) is used. The thickness of the third n-side conductive film 43 is about 0.05 μm, for example. For example, the first n-side conductive film 41 serves as a pad portion of the first electrode 40.

  On the other hand, the second electrode 50 in contact with the second semiconductor layer 20 is provided on the second major surface 10a side on the second semiconductor layer 20 side of the multilayer structure 10s. The first conductive layer 51, the second conductive layer 52, and the third conductive layer 53 are included in the second electrode 50.

The first conductive layer 51 is provided on the opposite side of the second semiconductor layer 20 from the first semiconductor layer 10. The first conductive layer 51 is transmissive to the emitted light emitted from the light emitting layer 30. The first conductive layer 51 includes In, Sn, an oxide containing at least one element selected from Zn and Ti by Ri group consisting. For the first conductive layer 51, for example, ITO (Indium Tin Oxide) is used.

  The second conductive layer 52 is in contact with the first main surface 51 a on the opposite side of the first conductive layer 51 from the second semiconductor layer 20. For example, the second conductive layer 52 becomes a bonding pad portion of the second electrode 50. The second conductive layer 52 is electrically connected to the first conductive layer 51.

  The third conductive layer 53 is in contact with the first main surface 51 a of the first conductive layer 51. The third conductive layer 53 has a reflectance higher than that of the second conductive layer 52 with respect to the emitted light. The third conductive layer 53 includes an extending portion 53p. At least a part of the extending portion 53p is not covered with the second conductive layer 52. The extending portion 53p extends in parallel to the first main surface 51a. That is, the extending part 53p extends in a direction perpendicular to the Z-axis direction.

  In this specific example, the extending portion 53 p of the third conductive layer 53 extends along the direction from the second conductive layer 52 toward the first electrode 40. The extending part 53p has an elongated shape. The third conductive layer 53 has a function of spreading current.

  In the example shown in FIGS. 1A and 1B, the second conductive layer 52 covers a part of the third conductive layer 53. The embodiment is not limited to this, and a part of the second conductive layer 52 may be in contact with a part of the third conductive layer 53. Further, the third conductive layer 53 may cover a part of the second conductive layer 52.

  The adhesion of the second conductive layer 52 to the first conductive layer 51 is greater than the adhesion of the third conductive layer 53 to the first conductive layer 51. That is, by setting the adhesive force of the second conductive layer 52 functioning as a bonding pad portion to be large, high bonding performance in the bonding pad portion can be ensured.

  On the other hand, the third conductive layer 53 having the function of equalizing the current does not necessarily require high adhesion. For this reason, the request | requirement with respect to the adhesive force of the 3rd conductive layer 53 with the 1st conductive layer 51 is eased. Thereby, a material having a higher reflectance than the material used for the second conductive layer 52 can be used for the third conductive layer 53. By using such a third conductive layer 53, the current is made uniform and high luminous efficiency is obtained, and at the same time, high light extraction efficiency due to high reflectance is obtained. That is, high efficiency can be obtained.

  Thereby, high bonding properties are obtained by the second conductive layer 52, and high light emission efficiency and high light extraction efficiency are obtained by the third conductive layer 53. That is, high efficiency can be obtained.

  The second conductive layer 52 may include a layer in contact with the first conductive layer 51 and including at least one of nickel, titanium, vanadium, platinum, and gold. The layer containing at least one of nickel, titanium, vanadium, platinum, and gold can include an alloy containing at least two of nickel, titanium, vanadium, platinum, and gold. For example, nickel has high adhesion to ITO. Thereby, a high adhesive force between the second conductive layer 52 and the first conductive layer 51 can be ensured. The reflectance of nickel with respect to blue light is relatively low at about 40%.

  The third conductive layer 53 can include at least one of aluminum, silver, platinum, and rhodium. The third conductive layer 53 can include aluminum and an alloy including at least two of silver, platinum, and rhodium. For example, the reflectance of Al to ultraviolet and blue light is as high as 89%. The reflectance of Ag with respect to ultraviolet and blue light is as high as 98%. Accordingly, by using a material having such a high reflectance for the third conductive layer 53, high light extraction efficiency can be obtained. For example, the adhesion of Al and Ag to ITO is smaller than that of nickel, for example.

Thus, by using different materials for the second conductive layer 52 and the third conductive layer 53, the performance required for each of the second conductive layer 52 and the third conductive layer 53 is sufficiently satisfied.
According to the semiconductor light emitting device 110 according to the present embodiment, a semiconductor light emitting device having high bondability and high efficiency can be provided.

  In the positive electrode including the translucent electrode formed on the semiconductor layer and the bonding pad electrode formed on the translucent electrode, the bonding pad electrode reflects on the surface in contact with the translucent electrode. Configurations having layers are known. Thus, it has been proposed to suppress light absorption of the bonding pad portion. However, in this configuration, the reflective layer is part of the bonding pad electrode. Therefore, the shape when the reflective layer is viewed from the Z-axis direction matches the shape when the bonding pad electrode is viewed along the Z-axis direction. That is, the reflective layer does not have a portion extending from the bonding pad electrode along the main surface of the translucent electrode. For this reason, in this configuration, the effect of equalizing the current cannot be obtained.

On the other hand, in the semiconductor light emitting device 110 according to the embodiment, the third conductive layer 53 having a high reflectance has an extending portion 53p extending along the first main surface 51a of the first conductive layer 51. . By this extending portion 53p, the current flowing between the second conductive layer 52 and the first electrode 40 can be made uniform, and the light emission efficiency can be improved.
That is, according to the embodiment, light emission is suppressed and high bonding property is ensured while improving luminous efficiency by equalizing current.

  In the configuration in which the electrode provided on the translucent electrode includes a pedestal electrode and an auxiliary electrode extended from the pedestal electrode, for example, when the same material is used for the pedestal electrode and the auxiliary electrode, bonding is performed. Or low light absorption or large efficiency.

  For example, in the case where the second conductive layer 52 has the same pattern shape as the extending portion 53p, it is difficult to process the second conductive layer 52 if the extending portion 53p is thinned in order to improve the light extraction efficiency. In addition, when the second conductive layer 52 has a wide pattern shape covering the entire extending portion 53p, the second conductive layer 52 having a low reflectance is opposed to the light emitting layer 30, so that light is absorbed. Increases and the light extraction efficiency decreases.

  On the other hand, in the semiconductor light emitting device 110 according to the present embodiment, the pattern shape of the second conductive layer 52 and the pattern shape of the extending portion 53p of the third conductive layer 53 are different from each other. That is, the second conductive layer 52 functioning as a bonding pad portion has a pattern shape that can exhibit appropriate characteristics as the bonding pad portion. For example, the pattern shape of the second conductive layer 52 is, for example, a substantially circular shape, a substantially flat circular shape, a substantially rectangular shape, or a substantially polygonal shape. On the other hand, the pattern shape of the third conductive layer 53 is, for example, a linear shape so as to obtain high light extraction efficiency while equalizing the current. In addition, materials having appropriate characteristics are used for the second conductive layer 52 and the third conductive layer 53 having different shapes as described above. In other words, the second conductive layer 52 is made of a material having a good bonding property to the first conductive layer 51. The third conductive layer 53 is made of a highly reflective material. Thereby, a semiconductor light emitting device having high bonding properties and high efficiency can be provided.

  In the embodiment, the thickness of the first conductive layer 51 is, for example, not less than 50 nm and not more than 300 nm. If the thickness of the first conductive layer 51 is less than 50 nm, the sheet resistance of the first conductive layer 51 is too high, the current is difficult to spread, and the efficiency tends to decrease. If the thickness of the first conductive layer 51 is greater than 300 nm, the light extraction characteristics are likely to deteriorate. The first conductive layer 51 is more preferably 100 nm or more and 250 nm or less.

  As shown in FIG. 1A, the semiconductor light emitting device 110 may further include a substrate 5 provided on the side of the first semiconductor layer 10 opposite to the second semiconductor layer 20. As the substrate 5, at least one of sapphire, GaN, SiC, Si, and GaAs can be used. In this specific example, the substrate 5 is a sapphire substrate. The semiconductor light emitting device 110 can further include a buffer layer 6 provided between the substrate 5 and the first semiconductor layer 10. A buffer layer 6 is formed on the substrate 5, and a stacked structure 10 s including the first semiconductor layer 10, the light emitting layer 30, and the second semiconductor layer 20 is formed on the buffer layer 6. After the stacked structure 10s is formed, the substrate 5 and the buffer layer 6 (at least a part thereof) may be removed. That is, in the semiconductor light emitting device 110, the substrate 5 and the buffer layer 6 are provided as necessary and can be omitted.

  Note that a multilayer structure (not shown) may be further provided between the first semiconductor layer 10 and the light emitting layer 30. The multilayer structure includes a plurality of first layers (not shown) stacked in the Z-axis direction, and a second layer provided between each of the first layers. That is, the multilayer structure includes a plurality of first layers and a plurality of second layers that are alternately stacked in the Z-axis direction. The multilayer structure is, for example, a superlattice layer. The multilayer structure is provided as necessary and may be omitted. The multilayer structure can also be regarded as being included in the first semiconductor layer 10.

  Further, as will be described later, an insulating film (not shown in FIGS. 1A and 1B) that covers the laminated structure 10 s except a part of the first electrode 40 and a part of the second conductive layer 52. No) may be further provided. This insulating film can cover the first conductive layer 51 and the second conductive layer 52.

Here, the direction from the second conductive layer 52 toward the first electrode 40 is defined as an X-axis direction (second direction). A direction perpendicular to the Z-axis direction and perpendicular to the X-axis direction is defined as a Y-axis direction (third direction).

Hereinafter, an example of a method for manufacturing the semiconductor light emitting device 110 will be described.
FIG. 2A to FIG. 2E are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment.
As shown in FIG. 2A, for example, after forming the buffer layer 6 on the main surface of the substrate 5 made of sapphire, the n-type GaN layer doped with the n-type impurity as the first semiconductor layer 10. Grow crystals.

  For crystal growth, for example, metal organic chemical vapor deposition (MOCVD) is used. For crystal growth, molecular beam epitaxy (MBE) may be used.

  A crystal of the light emitting layer 30 is grown on the first semiconductor layer 10. For example, the barrier layer 31 is formed. On top of this, the well layers 32 and the barrier layers 31 are grown alternately. The barrier layer 31 is grown on the last grown well layer 32. Thereby, the light emitting layer 30 of MQW structure is formed. The growth temperature of the barrier layer 31 and the well layer 32 is, for example, 700 ° C. or higher and 800 ° C. or lower.

A crystal of the second semiconductor layer 20 is grown on the light emitting layer 30. A crystal of a p-type GaN layer to be the second p-type semiconductor layer 22 is grown, and a crystal of a p-type GaN layer to be the first p-type semiconductor layer 21 is grown thereon. The growth temperature of these p-type GaN layers is, for example, 1000 ° C. or more and 1100 ° C. or less.
Thereby, the laminated structure 10s illustrated in FIG. 2A is formed.

  As shown in FIG. 2B, the first conductive layer 51 is formed on the second semiconductor layer 20 (specifically, the first p-type semiconductor layer 21). That is, the first conductive layer 51 is obtained by forming an ITO film to be the first conductive layer 51 on the second semiconductor layer 20 and processing the ITO film into a predetermined shape. In this specific example, the thickness of the first conductive layer 51 is 170 nm.

  As shown in FIG. 2C, the stacked structure 10s is processed by, for example, dry etching to expose the first semiconductor layer 10 (for example, an n-type GaN layer). A first electrode 40 is formed on the exposed first semiconductor layer 10. That is, a Ti film to be the third n-side conductive film 43 is formed on the first semiconductor layer 10, a Pt film to be the second n-side conductive film 42 is formed thereon, and the first n-side conductive film is formed thereon. An Au film to be 41 is formed.

  An Al film is formed as the third conductive layer 53 on the first main surface 51 a of the first conductive layer 51. The thickness of the Al film is about 0.5 μm, for example. The Al film is processed into a predetermined shape, and the third conductive layer 53 is obtained. At this time, a part of the first conductive layer 51 is exposed.

  As shown in FIG. 2D, the second conductive layer 52 is formed on the exposed first conductive layer 51. That is, a Ni film to be the second conductive layer 52 is formed. Further, an Au film may be formed on the Ni film. The second conductive layer 52 is obtained by processing these Ni films (and Au films) into a predetermined shape.

As shown in FIG. 2E, for example, an SiO ₂ film is formed on the entire surface of the workpiece, and the insulating film 60 is formed by processing the SiO ₂ film. The insulating film 60 covers the stacked structure 10 s except for a part of the first electrode 40 and a part of the second conductive layer 52. The insulating film 60 covers the first conductive layer 51 and the second conductive layer 52. The insulating film 60 functions as a passivation film.
In this way, the semiconductor light emitting device 110 according to the embodiment is obtained.

  In the semiconductor light emitting device 110, an Al film having a high reflectance for blue light is used as the third conductive layer 53. As the third conductive layer 53, an Ag film having a high reflectance with respect to blue light may be used. However, the adhesion of the third conductive layer 53 to the first conductive layer 51 is lower than the adhesion of the second conductive layer 52 to the first conductive layer 51. On the other hand, a Ni film having strong adhesion is used for the second conductive layer 52 to be the bonding pad portion.

  As described above, in the semiconductor light emitting device 110, the second conductive layer 52 having a high bonding strength and the third conductive layer 53 having a high reflectance are separately provided on the first conductive layer 51 having a light-transmitting property. Form with material. As a result, high bonding strength can be secured in the second conductive layer 52 serving as a bonding pad portion, and the third conductive layer 53 having a function of diffusing current and supplying current efficiently to the light emitting layer 30 has high reflectivity. Get light extraction efficiency.

  By forming the second conductive layer 52 to be a bonding pad portion on the first conductive layer 51 by using a material different from that of the third conductive layer 53, it is possible to suppress pad electrode peeling during wire bonding. it can.

  As shown in FIG. 1B, the extension portion 53 p of the third conductive layer 53 has a distance from the first electrode 40 (particularly, the pad portion of the first electrode 40) such that the distance from the second conductive layer 52. It has a portion (proximity portion 53q) shorter than the distance from the first electrode 40 (particularly the pad portion of the first electrode 40). The proximity portion 53q is, for example, the tip of the extending portion 53p. The distance between the proximity portion 53q and the first electrode 40 (especially the pad portion of the first electrode 40) is the distance between the second conductive layer 52 and the first electrode 40 (especially the pad portion of the first electrode 40). Longer than. Thereby, the current flowing between the second electrode 50 and the first electrode 40 can be averaged. Thereby, luminous efficiency can be improved.

  In the semiconductor light emitting device 110, the extending portion 53p extends along the X-axis direction. That is, the extending portion 53p includes a portion (first portion 53a) that is perpendicular to the Z-axis direction and extends along the X-axis direction from the second conductive layer 52 toward the first electrode 40.

The width of the extending portion 53p for equalizing the current is narrower than the width of the second conductive layer 52 serving as a bonding pad portion.
That is, as shown in FIG. 1B, the width w3 along the direction perpendicular to the extending direction of the extending portion 53p and parallel to the first main surface 51a is equal to the width of the second conductive layer 52. It is narrower than the width w2 along the direction parallel to the first major surface 51a. That is, the extending part 53p is a thin line. Accordingly, it is possible to efficiently pass a current between the second conductive layer 52 and the first conductive layer 51 while reducing the area of the light-shielding third conductive layer 53. Thereby, high luminous efficiency is obtained while suppressing a decrease in light extraction efficiency.

  The width w3 of the extending portion 53p along the direction perpendicular to the extending direction and parallel to the first main surface 51a is preferably 1 μm or more and 50 μm or less. When the width w3 is smaller than 1 μm, for example, it becomes difficult to process the extending portion 53p, and the resistance of the extending portion 53p increases. When the width w3 is larger than 50 μm, the ratio of the emitted light shielded by the extending portion 53p increases and the light extraction efficiency decreases.

  The width w2 along the direction parallel to the first major surface 51a of the second conductive layer 52 is desirably 30 μm or more and 80 μm or less. If the width w2 is smaller than 30 μm, for example, the bonding operation becomes difficult, and the bonding force of the bonding wire decreases. When the width w2 is larger than 80 μm, the area of the second conductive layer 52 having a low reflectance is increased, so that the light extraction efficiency is lowered. At this time, the relationship that the width w3 of the extending portion 53p is narrower than the width w2 of the second conductive layer 52 is maintained.

  The length L3 along the extending direction of the extending part 53p is longer than the width w3 along the direction perpendicular to the extending direction of the extending part 53p. That is, the extending part 53p is a thin line. Thereby, the area of the extending portion 53p can be reduced and the light extraction efficiency can be improved while the current flowing between the second conductive layer 52 and the first electrode 40 is made uniform.

FIG. 3A to FIG. 3C are schematic plan views illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 3A, in the third conductive layer 53 of the semiconductor light emitting device 111 according to the embodiment, the extending portion 53p has three portions (a first portion 53a, a second portion 53b, and a third portion. 53c). The first portion 53 a extends along the X-axis direction from the second conductive layer 52 toward the first electrode 40. The second portion 53b extends from the second conductive layer 52 in the positive direction of the Y-axis direction and then extends in the direction toward the first electrode 40 along the X-axis direction. The third portion 53c extends from the second conductive layer 52 in the negative direction of the Y-axis direction and then extends in the direction toward the first electrode 40 along the X-axis direction. As described above, the extending portion 53p can include a plurality of portions.

  As shown in FIG. 3B, in the third conductive layer 53 of the semiconductor light emitting device 112 according to the embodiment, the length L3 along the extending direction of the extending portion 53p is the extension of the extending portion 53p. It is substantially the same as the width w3 along the direction perpendicular to the present direction. Thus, the length L3 along the extending direction of the extending portion 53p may be equal to or greater than the width w3 along the direction perpendicular to the extending direction of the extending portion 53p. Even when the length L3 of the extending portion 53p is relatively short as in the semiconductor light emitting device 112, the extending portion 53p of the third conductive layer 53 is separated from the second conductive layer 52 by a distance from the first electrode 40. The proximity portion 53q is shorter than the distance from the first electrode 40. Also in the case of the third conductive layer 53 having such an extended portion 53p, the second conductive layer 52 and the third conductive layer 53 are not provided and the first conductive layer 51 and the second conductive layer 52 are provided. The current flowing between the first electrodes 40 can be made uniform. At this time, by using a material having a higher reflectance than that of the second conductive layer 52 for the third conductive layer 53, light loss in the third conductive layer 53 can be suppressed, and efficiency can be improved.

  As shown in FIG. 3C, in the semiconductor light emitting device 113 according to the embodiment, the second conductive layer 52 and the first n-side conductive film 41 (pad portion) of the first electrode 40 are stacked structures. The main surfaces of the body 10s are provided at opposite corners. The extending portion 53p of the third conductive layer 53 extends along one side of the multilayer structure 10s. The second n-side conductive film 42 and the third n-side conductive film 43 of the first electrode 40 extend from the first n-side conductive film 41 along one side of the main surface of the multilayer structure 10s. That is, the second n-side conductive film 42 and the third n-side conductive film 43 have an n-side extension 40 p that extends from the first n-side conductive film 41.

  The extending direction of the extending part 53p of the third conductive layer 53 and the extending direction of the n-side extending part 40p are substantially parallel to each other. Even in such a configuration, by providing the extending portion 53p and the n-side extending portion 40p, the current can be made uniform and the light emission efficiency can be improved. Further, by using a material having a higher reflectance than the second conductive layer 52 for the third conductive layer 53, high bondability and high efficiency can be obtained.

4A and 4B are schematic plan views illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 4A, in the third conductive layer 53 of the semiconductor light emitting device 114 according to the embodiment, the extending portion 53p has two portions (a second portion 53b and a third portion 53c). The second portion 53b extends from the second conductive layer 52 in the positive direction of the Y-axis direction and then extends in the direction toward the first electrode 40 along the X-axis direction. The third portion 53c extends from the second conductive layer 52 in the negative direction of the Y-axis direction and then extends in the direction toward the first electrode 40 along the X-axis direction.

  On the other hand, the second n-side conductive film 42 and the third n-side conductive film 43 of the first electrode 40 extend from the first n-side conductive film 41 along the X-axis direction toward the second conductive layer 52. Part 40p. The n-side extending part 40p is disposed between two parts (the second part 53b and the third part 53c) of the extending part 53p in the Y-axis direction. Even in such a configuration, by providing the extending portion 53p and the n-side extending portion 40p, the current can be made uniform and the light emission efficiency can be improved. Further, by using a material having a higher reflectance than the second conductive layer 52 for the third conductive layer 53, high bondability and high efficiency can be obtained.

As shown in FIG. 4B, in the semiconductor light emitting device 115 according to the embodiment, the second conductive layer 52 and the first n-side conductive film 41 of the first electrode 40 are the main components of the stacked structure 10s. It is provided in the mutually opposing corners of the surface. The extending part 53p of the third conductive layer 53 has two parts (a fourth part 53d and a fifth part 53e). These two portions respectively extend from the second conductive layer 52 along two intersecting sides of the laminated structure 10s. Even in such a configuration, by providing the extended portion 53p in the third conductive layer 53, the current can be made uniform and the light emission efficiency can be improved. Further, by using a material having a higher reflectance than the second conductive layer 52 for the third conductive layer 53, high bondability and high efficiency can be obtained.
As described above, the semiconductor light emitting device according to the embodiment can be variously modified.

FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 5, in another semiconductor light emitting device 120 according to the embodiment, the third conductive layer 53 and the second conductive layer 52 are not in contact with each other. For example, when the sheet resistance of the first conductive layer 51 is relatively low and the distance between the third conductive layer 53 and the second conductive layer 52 is relatively short, the third conductive layer 53 and the second conductive layer 52 are They do not have to touch each other. That is, the second conductive layer 52 may be in contact with the first conductive layer 51 and the third conductive layer 53 may be in contact with the first conductive layer 51. Also in this case, high bondability and high efficiency can be obtained.

  In the semiconductor light emitting device according to the embodiment (for example, the semiconductor light emitting device 110), an Au film is used for the first n-side conductive film 41, an Al film is used for the second n-side conductive film 42, and a Ti film is used for the third n-side conductive film 43. Can be used. At this time, an Al film can be used as the third conductive layer 53. The Al film of the second n-side conductive film 42 and the Al film of the third conductive layer 53 can be formed simultaneously.

FIGS. 6A and 6B are schematic cross-sectional views in order of the processes, illustrating another method for manufacturing the semiconductor light emitting element according to the first embodiment.
FIG. 6A corresponds to a step after the step described with reference to FIG.
After forming the first conductive layer 51, as shown in FIG. 6A, the stacked structure 10s is processed to expose the first semiconductor layer 10, and on the exposed first semiconductor layer 10, and An Al film is formed on the first conductive layer 51. Then, this Al is processed into a predetermined shape. This Al film becomes the third n-side conductive film 43 and the third conductive layer 53.

  As shown in FIG. 6B, a Ni film is formed on the first conductive layer 51 and the third n-side conductive film 43 and processed into a predetermined shape. This Ni film becomes the second conductive layer 52 and the second n-side conductive film 42.

Et al is, on the second conductive layer 52 and the 2n Gawashirubedenmaku 42, forming an Au film (not shown). The Au film on the second n-side conductive film 42 becomes the first n-side conductive film 41.
Thereby, the semiconductor light emitting device according to this embodiment is obtained.

  In this configuration, the Al film of the second n-side conductive film 42 is provided in contact with the n-type GaN layer of the first semiconductor layer 10. Since Al exhibits ohmic properties with respect to the n-type GaN layer, ohmic contact between the first semiconductor layer 10 and the first electrode 40 (that is, the second n-side conductive film 42) can be ensured. In this case, the configuration of the semiconductor light emitting element is further simplified. That is, the third conductive layer 53 and at least a part of the first electrode 40 can be formed simultaneously, and productivity can be improved.

  As described above, the semiconductor light emitting device according to the embodiment includes the first electrode 40 provided on the first semiconductor layer 10 on the second main surface 10a side on the second semiconductor layer 20 side of the stacked structure 10s. In addition, the first electrode 40 may include a layer including a material used for the third conductive layer 53. For example, the third conductive layer includes at least one of aluminum, silver, platinum, and rhodium, and the first electrode 40 includes a layer that includes at least one of aluminum, silver, platinum, and rhodium.

(Second Embodiment)
The second embodiment is a method for manufacturing a semiconductor light emitting device.
That is, the present manufacturing method includes a first conductivity type first semiconductor layer 10 including a nitride semiconductor, a second conductivity type second semiconductor layer 20 including a nitride semiconductor, and the first semiconductor layer 10 and the second semiconductor. A laminated structure 10s provided between the layer 20 and the light emitting layer 30 including the nitride semiconductor layer, and is formed on the second main surface 10a on the second semiconductor layer 20 side of the laminated structure 10s. The laminated structure 10s in which a part of the first semiconductor layer 10 is exposed, the first electrode 40 in contact with the first semiconductor layer 10 on the second main surface 10a side, and the second semiconductor on the second main surface 10a side This is a method for manufacturing a semiconductor light-emitting element having a second electrode 50 in contact with the layer 20 and including a first conductive layer 51, a second conductive layer 52, and a third conductive layer 53.

FIG. 7 is a flowchart illustrating the method for manufacturing the semiconductor light emitting element according to the second embodiment.
As shown in FIG. 7, in the present manufacturing method, the first conductive layer 51 that is transmissive to the emitted light emitted from the light emitting layer 30 is formed on the second semiconductor layer 20 (step S110). ). For example, the processing described with reference to FIG.

  On the part of the first conductive layer 51 and the exposed part of the first semiconductor layer 10, a highly reflective conductive film having a reflectance higher than the reflectance of the second conductive layer 52 with respect to the emitted light. Form (step S120). For example, the Al film described with reference to FIG. 6A is formed as the highly reflective conductive film.

  By processing this highly reflective conductive film, at least a part of the first electrode 40 (for example, the third n-side conductive film 43) and the first main surface of the first conductive layer 51 on the side opposite to the second semiconductor layer 20 are processed. A third conductive layer 53 having an extending portion 53p extending along 51a is formed (step S130). For example, the processing described with reference to FIG.

  On the part of the first conductive layer 51, the second conductive layer 52 that exposes at least a part of the extending part 53p of the third conductive layer 53 is formed (step S140). For example, the processing described with reference to FIG.

  According to the method for manufacturing a semiconductor light emitting device according to the present embodiment, a semiconductor light emitting device having high bondability and high efficiency can be manufactured with high productivity.

  In addition, the order of said step S110-step S140 is interchangeable as much as technically possible. Further, any two of steps S110 to S140 may be performed at the same time as technically possible. For example, the order of step S130 and step S140 may be switched. Moreover, step S120 and step S130 can also be implemented simultaneously. For example, when a highly reflective conductive film is formed using a mask, the formation of the highly reflective conductive film (Step S120) and the processing of the highly reflective conductive film (Step S130) are performed simultaneously.

  The nitride semiconductor manufacturing method according to the embodiment can be applied to blue-green to green to red LEDs, blue-green to green to red laser diodes (LD), and the like.

  According to the embodiment, it is possible to provide a semiconductor light emitting device having high bondability and high efficiency and a method for manufacturing the same.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. It ’s fine.

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, a person skilled in the art has a specific configuration of each element such as a substrate, a buffer layer, a semiconductor layer, a light emitting layer, a barrier layer, a well layer, a stacked structure, a conductive layer, an electrode, and an insulating film included in the semiconductor light emitting element. Is appropriately included in the scope of the present invention as long as the present invention can be carried out in the same manner and the same effects can be obtained by appropriately selecting from the known ranges. For example, the composition and film thickness described in the above embodiment are examples, and various selections are possible.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all semiconductor light-emitting devices and methods for manufacturing the same that can be implemented by those skilled in the art based on the semiconductor light-emitting devices and methods for manufacturing the same described above as embodiments of the present invention are also included in the gist of the present invention. As long as it is included, it belongs to the scope of the present invention.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 5 ... Board | substrate, 6 ... Buffer layer, 10 ... 1st semiconductor layer, 10a ... 2nd main surface, 10s ... Multilayer structure, 20 ... 2nd semiconductor layer, 21 ... 1st p-type semiconductor layer, 22 ... 2nd p-type semiconductor 30 ... Light-emitting layer, 31 ... Barrier layer, 32 ... Active layer, 40 ... First electrode, 40p ... N-side extension, 41 ... First n-side conductive film, 42 ... Second n-side conductive film, 43 ... First 3n side conductive film, 50 ... second electrode, 51 ... first conductive layer, 51a ... first main surface, 52 ... second conductive layer, 53 ... third conductive layer, 53a, 53b, 53c, 53d, 53e ... first 1st-5th part, 53p ... Extension part, 53q ... Proximity part, 60 ... Insulating film, 110, 111, 112, 113, 114, 115, 120 ... Semiconductor light emitting element, L3 ... Length, w2, w3 ... Width

Claims (5)

A first semiconductor layer of a first conductivity type including a nitride semiconductor; a second semiconductor layer of a second conductivity type including a nitride semiconductor; and provided between the first semiconductor layer and the second semiconductor layer; And a light emitting layer including a nitride semiconductor layer, wherein a part of the first semiconductor layer is exposed on a second main surface of the stacked structure on the second semiconductor layer side. The stacked structure, the first electrode in contact with the first semiconductor layer on the second main surface side, and the second semiconductor layer in contact with the second semiconductor layer on the second main surface side, the first conductive layer and the second conductive layer And a second electrode including a reflective third conductive layer, and a method for manufacturing a semiconductor light emitting device,
On the second semiconductor layer has a transparency to light emission emitted from the light emitting layer, at 100 nm or more 250 nm or less, have a uniform thickness, the Ru spread current 1 conductive layer is formed,
A highly reflective conductive material having a reflectivity higher than the reflectivity of the second conductive layer for the light emission on a portion of the first conductive layer and the exposed portion of the first semiconductor layer. Forming a film, processing the highly reflective conductive film, and extending along at least a part of the first electrode and the first main surface of the first conductive layer opposite to the second semiconductor layer; And having an extending portion having a width in a direction perpendicular to the extending direction and parallel to the first main surface that is not less than 1 micrometer and not more than 50 micrometers, and includes at least aluminum, silver, and rhodium Forming the third conductive layer including any one of the following:
At least a part of the extension part of the third conductive layer is exposed on a part of the first conductive layer, and an adhesion force to the first conductive layer is the first conductive layer of the third conductive layer. The second conductive layer having a width greater than 30 μm and not more than 80 μm in a direction parallel to the first main surface is formed, wherein the second conductive layer is larger than the adhesion force to the first main surface. Method.   2. The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the extending portion has a portion whose distance from the first electrode is shorter than a distance between the second conductive layer and the first electrode. .   The width of the extending portion along the direction perpendicular to the extending direction and parallel to the first main surface is along the direction parallel to the first main surface of the second conductive layer. 3. The method for manufacturing a semiconductor light emitting element according to claim 1, wherein the semiconductor light emitting element is narrower than the width.   4. The semiconductor light emitting element according to claim 1, wherein the second conductive layer includes a layer in contact with the first conductive layer and including at least one of nickel, titanium, and vanadium. Manufacturing method.   5. The semiconductor according to claim 1, wherein the first conductive layer includes an oxide containing at least one element selected from the group consisting of In, Sn, Zn, and Ti. Manufacturing method of light emitting element.

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