JP5815254B2 - Method for forming thick film metal electrode and method for forming thick film resist - Google Patents

Method for forming thick film metal electrode and method for forming thick film resist Download PDF

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JP5815254B2
JP5815254B2 JP2011055243A JP2011055243A JP5815254B2 JP 5815254 B2 JP5815254 B2 JP 5815254B2 JP 2011055243 A JP2011055243 A JP 2011055243A JP 2011055243 A JP2011055243 A JP 2011055243A JP 5815254 B2 JP5815254 B2 JP 5815254B2
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鈴木　賢二
賢二 鈴木
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Showa Denko KK
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Description

本発明は、厚膜金属電極の形成方法、及び厚膜レジストの形成方法に関する。   The present invention relates to a method for forming a thick film metal electrode and a method for forming a thick film resist.

炭化珪素（ＳｉＣ）は、半導体材料のうちの１つであり、他の半導体材料である珪素（Ｓｉ）や砒化ガリウム（ＧａＡｓ）等と比較して、バンドギャップが大きいことから、 炭化珪素基板を用いて、パワーデバイス、高周波デバイス、及び高温動作デバイス等の炭化珪素デバイスを形成する研究が行なわれている（例えば、特許文献１参照。）。   Silicon carbide (SiC) is one of the semiconductor materials and has a larger band gap than other semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). Research has been conducted on forming silicon carbide devices such as power devices, high-frequency devices, and high-temperature operation devices (see, for example, Patent Document 1).

炭化珪素基板を備えたパワーデバイスは、炭化珪素基板と、該炭化珪素基板上に形成され、かつパワーデバイス素子を備えた回路素子層と、回路素子層上に形成され、かつパワーデバイス素子と電気的に接続されたパッド電極と、を有する。
上記電極パッドは、微細な形状とされている。そこで、従来、微細な金属パターンを形成することの可能なリフトオフ法により、電極パッドを形成することが行なわれている。 A power device including a silicon carbide substrate includes a silicon carbide substrate, a circuit element layer formed on the silicon carbide substrate and including a power device element, and formed on the circuit element layer and electrically connected to the power device element. Connected pad electrodes.
The electrode pad has a fine shape. Therefore, conventionally, an electrode pad is formed by a lift-off method capable of forming a fine metal pattern.

具体的には、回路素子層上の電極パッドが形成される面を露出する開口部が形成されたレジストの上面側から、電極パッドの母材となる金属膜を蒸着し、その後、金属膜が形成されたレジストをリフトオフすることで、回路素子層上に電極パッドを形成する。
このような方法により、電極パッドを形成する場合、開口部の断面形状を逆テーパーにする必要がある。そのため、リフトオフ法に用いるレジストとしては、ポジ−ネガ反転型レジストを使用することが好ましい。 Specifically, a metal film serving as a base material of the electrode pad is deposited from the upper surface side of the resist in which an opening exposing the surface on which the electrode pad is formed on the circuit element layer is formed. An electrode pad is formed on the circuit element layer by lifting off the formed resist.
When forming an electrode pad by such a method, it is necessary to make the cross-sectional shape of an opening part reverse taper. Therefore, it is preferable to use a positive-negative reversal resist as the resist used for the lift-off method.

特開２００３−２４３３２３号公報JP 2003-243323 A

ところで、パワーデバイスを構成するパッド電極には、配線基板とパワーデバイスとを電気的に接続する際、ワイヤボンディング法により金属ワイヤが接続される。このため、パッド電極は、十分な機械的強度を有する厚さに形成する必要がある。
また、パワーデバイスを構成するパッド電極には、大電流が流されるため、パワーデバイスが発熱しやすくい。このため、パワーデバイスの熱を、電極パッドを介して、放熱する必要がある（言い換えれば、電極パッドを放熱部材として機能させる必要がある。）。
上記２つの理由により、炭化珪素基板を備えた炭化珪素デバイスでは、電極パッドの厚さを６μｍ以上にする必要があった。 By the way, when the wiring substrate and the power device are electrically connected to the pad electrode constituting the power device, a metal wire is connected by a wire bonding method. For this reason, the pad electrode needs to be formed to a thickness having sufficient mechanical strength.
Further, since a large current flows through the pad electrode constituting the power device, the power device is likely to generate heat. For this reason, it is necessary to radiate the heat of the power device through the electrode pad (in other words, the electrode pad needs to function as a heat radiating member).
For the above two reasons, in the silicon carbide device provided with the silicon carbide substrate, the thickness of the electrode pad has to be 6 μm or more.

しかしながら、現状、市販のポジ−ネガ反転型レジストでは、一度に形成可能な厚さの限界が６μｍ程度であるため、この厚さとされた市販のポジ−ネガ反転型レジストを用いたリフトオフ法により形成可能な電極パッドの厚さは５μｍ程度であった。
そのため、従来の方法では、厚さが６μｍ以上の電極パッドを形成することができないという問題があった。 However, at present, commercially available positive-negative reversal resists have a thickness limit of about 6 μm that can be formed at one time. Therefore, they are formed by a lift-off method using a commercially available positive-negative reversal resist of this thickness. The possible electrode pad thickness was on the order of 5 μm.
Therefore, the conventional method has a problem that an electrode pad having a thickness of 6 μm or more cannot be formed.

また、同じ特性を有したポジ−ネガ反転型レジストを２回積層形成して、積層されたポジ−ネガ反転型レジストの厚さを７μｍ以上にすることが考えられるが、この場合、積層されたポジ−ネガ反転型レジストの面内バラツキ（炭化珪素基板面内における不均一性）を、所望の範囲内（例えば、３インチの炭化珪素基板の場合、エッジカット５ｍｍで、５％以内）とすることができないという問題があった。
つまり、炭化珪素基板の面内において、厚さが６μｍ以上とされた電極パッドを良好な形状（エッジ部（外周縁）にバリが無い形状）に形成することができないという問題があった。 In addition, it is conceivable that a positive-negative reversal resist having the same characteristics is laminated twice, so that the thickness of the laminated positive-negative reversal resist is 7 μm or more. In-plane variation (non-uniformity in the surface of the silicon carbide substrate) of the positive-negative reversal resist is within a desired range (for example, in the case of a 3-inch silicon carbide substrate, the edge cut is 5 mm and within 5%) There was a problem that I could not.
That is, there is a problem in that the electrode pad having a thickness of 6 μm or more cannot be formed into a good shape (a shape having no burr at the edge (outer peripheral edge)) within the surface of the silicon carbide substrate.

本発明は、上記事情を鑑みてなされたものであり、炭化珪素基板に形成された回路素子層上に、厚さが７μｍ以上で、かつ面内均一性に優れたポジ−ネガ反転型レジストが形成可能な厚膜金属電極の形成方法、及び厚膜レジストの形成方法を提供することを目的とする。   The present invention has been made in view of the above circumstances. A positive-negative reversal resist having a thickness of 7 μm or more and excellent in-plane uniformity is formed on a circuit element layer formed on a silicon carbide substrate. It is an object to provide a method for forming a thick film metal electrode and a method for forming a thick film resist.

すなわち、上記の目的を達成するために、本発明は以下の手段を提供する。
（１） 炭化珪素基板に形成された回路素子層の上面に、厚さが６μｍ以上の厚膜金属電極を形成する厚膜金属電極の形成方法であって、前記回路素子層の上面をＨＭＤＳ処理する工程と、前記ＨＭＤＳ処理された前記回路素子層の上面に、第１の粘性値を有した第１のポジ−ネガ反転型レジストを形成する工程と、前記第１のポジ−ネガ反転型レジスト上に、前記第１及び第２のポジ−ネガ反転型レジストの合計の厚さが７μｍ以上となるように、前記第１の粘性値よりも大きい第２の粘性値を有した第２のポジ−ネガ反転型レジストを形成する工程と、前記回路素子層の上面のうち、前記厚膜金属電極が形成される電極形成面と対向する遮光部を有した露光用マスクを介して、前記第１及び第２のポジ−ネガ反転型レジストを露光する工程と、前記露光後に、前記第１及び第２のポジ−ネガ反転型レジストをベーク処理することで、前記第１及び第２のポジ−ネガ反転型レジストの特性をポジからネガに反転させる工程と、前記ベーク処理後に、前記第１及び第２のポジ−ネガ反転型レジストを全面露光する工程と、前記全面露光後に、前記第１及び第２のポジ−ネガ反転型レジストを現像処理することにより、前記第１及び第２のポジ−ネガ反転型レジストに、逆テーパー形状とされ、かつ前記電極形成面を露出する開口部を形成する工程と、前記開口部を形成後に、前記第１及び第２のポジ−ネガ反転型レジストをポストベークする工程と、前記ポストベーク後に、前記第２のポジ−ネガ反転型レジストの上面側から、蒸着法により、前記厚膜金属電極の母材となり、かつ厚さが６μｍ以上とされた金属膜を成膜する工程と、前記第１及び第２のポジ−ネガ反転型レジストをリフトオフする工程と、を含むことを特徴とする厚膜金属電極の形成方法。
（２） 前記第１の粘性値は、３０ｃｐ以下であり、前記第２の粘性値は、８０ｃｐ以上であることを特徴とする前項（１）記載の厚膜金属電極の形成方法。
（３） 前記厚膜金属電極は、ワイヤボンディング法により、金属ワイヤが接続される外部接続用の電極であることを特徴とする前項（１）または（２）記載の厚膜金属電極の形成方法。
（４） 前記回路素子層には、パワーデバイス素子が形成されており、前記パワーデバイス素子は、前記厚膜金属電極と電気的に接続されていることを特徴とする前項（１）ないし（３）のうち、いずれか１項記載の厚膜金属電極の形成方法。
（５） 前記第１のポジ−ネガ反転型レジストを形成する工程は、前記ＨＭＤＳ処理された前記回路素子層の上面に、液状とされた前記第１のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第１のポジ−ネガ反転型レジストを硬化させる工程と、を含むことを特徴とする前項（１）ないし（４）のうち、いずれか１項記載の厚膜金属電極の形成方法。
（６） 前記第１のポジ−ネガ反転型レジストを形成する工程では、硬化した前記第１のポジ−ネガ反転型レジストの厚さを５μｍ以下に形成することを特徴とする前項（５）記載の厚膜金属電極の形成方法。
（７） 前記第２のポジ−ネガ反転型レジストを形成する工程は、硬化した前記第１のポジ−ネガ反転型レジストの上面に、液状とされた前記第２のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第２のポジ−ネガ反転型レジストを硬化させる工程と、を含むことを特徴とする前項（１）ないし（６）のうち、いずれか１項記載の厚膜金属電極の形成方法。
（８）前記第２のポジ−ネガ反転型レジストを形成する工程では、硬化した前記第２のポジ−ネガ反転型レジストの厚さを３μｍ以上に形成することを特徴とする前項（７）記載の厚膜金属電極の形成方法。
（９）炭化珪素基板に形成された回路素子層の上面に、厚さが７μｍ以上の厚膜レジストを形成する厚膜レジストの形成方法であって、前記回路素子層の上面をＨＭＤＳ処理する工程と、前記ＨＭＤＳ処理された前記回路素子層の上面に、第１の粘性値を有した第１のポジ−ネガ反転型レジストを形成する工程と、前記第１のポジ−ネガ反転型レジスト上に、前記第１及び第２のポジ−ネガ反転型レジストの合計の厚さが７μｍ以上となるように、前記第１の粘性値よりも大きい第２の粘性値を有した第２のポジ−ネガ反転型レジストを形成する工程と、を含むことを特徴とする厚膜レジストの形成方法。
（１０）前記第１の粘性値は、３０ｃｐ以下であり、前記第２の粘性値は、８０ｃｐ以上であることを特徴とする前項（９）記載の厚膜レジストの形成方法。
（１１）遮光部を有した露光用マスクを介して、前記第１及び第２のポジ−ネガ反転型レジストを露光する工程と、前記露光後に、前記第１及び第２のポジ−ネガ反転型レジストをベーク処理することで、前記第１及び第２のポジ−ネガ反転型レジストの特性をポジからネガに反転させる工程と、前記ベーク処理後に、前記第１及び第２のポジ−ネガ反転型レジストを全面露光する工程と、前記全面露光後に、前記第１及び第２のポジ−ネガ反転型レジストを現像処理する工程と、を含むことを特徴とする前項（９）または（１０）記載の厚膜レジストの形成方法。
（１２）前記第１のポジ−ネガ反転型レジストを形成する工程は、前記ＨＭＤＳ処理された前記回路素子層の上面に、液状とされた前記第１のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第１のポジ−ネガ反転型レジストを硬化させる工程と、を含むことを特徴とする前項（９）ないし（１１）のうち、いずれか１項記載の厚膜レジストの形成方法。
（１３）前記第１のポジ−ネガ反転型レジストを形成する工程では、硬化した前記第１のポジ−ネガ反転型レジストの厚さを５μｍ以下に形成することを特徴とする前項（１２）記載の厚膜レジストの形成方法。
（１４）前記第２のポジ−ネガ反転型レジストを形成する工程は、硬化した前記第１のポジ−ネガ反転型レジストの上面に、液状とされた前記第２のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第２のポジ−ネガ反転型レジストを硬化させる工程と、を含むことを特徴とする前項（９）ないし（１３）のうち、いずれか１項記載の厚膜レジストの形成方法。
（１５）前記第２のポジ−ネガ反転型レジストを形成する工程では、硬化した前記第２のポジ−ネガ反転型レジストの厚さを３μｍ以上に形成することを特徴とする前項（１４）記載の厚膜レジストの形成方法。 That is, in order to achieve the above object, the present invention provides the following means.
(1) A method for forming a thick metal electrode having a thickness of 6 μm or more on an upper surface of a circuit element layer formed on a silicon carbide substrate, wherein the upper surface of the circuit element layer is treated with HMDS Forming a first positive-negative reversal resist having a first viscosity value on the top surface of the circuit element layer that has been subjected to the HMDS process, and the first positive-negative reversal resist In addition, a second positive having a second viscosity value larger than the first viscosity value so that the total thickness of the first and second positive-negative inversion resists is 7 μm or more. The step of forming a negative reversal resist and the first mask through an exposure mask having a light-shielding portion facing the electrode forming surface on which the thick metal electrode is formed on the upper surface of the circuit element layer. And exposing the second positive-negative reversal resist And bake the first and second positive-negative reversal resists after the exposure to invert the characteristics of the first and second positive-negative reversal resists from positive to negative; A step of exposing the first and second positive-negative reversal resists entirely after the baking process, and developing the first and second positive-negative reversal resists after the whole surface exposure; Forming an opening in the first and second positive-negative reversal resists having an inverse taper shape and exposing the electrode formation surface; and after forming the opening, the first and second A step of post-baking the positive-negative reversal resist, and after the post-baking, from the upper surface side of the second positive-negative reversal resist, by a vapor deposition method, The A method of forming a thick film metal electrode, comprising: forming a metal film having a thickness of 6 μm or more; and lifting off the first and second positive-negative inversion resists.
(2) The method for forming a thick-film metal electrode according to (1), wherein the first viscosity value is 30 cp or less and the second viscosity value is 80 cp or more.
(3) The method for forming a thick film metal electrode according to (1) or (2), wherein the thick film metal electrode is an electrode for external connection to which a metal wire is connected by a wire bonding method. .
(4) A power device element is formed in the circuit element layer, and the power device element is electrically connected to the thick film metal electrode. ), The method for forming a thick-film metal electrode according to any one of the above.
(5) The step of forming the first positive / negative inversion type resist includes the step of forming the liquid first positive / negative inversion type resist on the upper surface of the circuit element layer that has been subjected to the HMDS treatment. And the step of curing the first positive-negative reversal resist that has been made liquid by pre-baking, and the thickness according to any one of the preceding items (1) to (4), Method for forming a membrane metal electrode.
(6) In the step of forming the first positive-negative reversal resist, the thickness of the cured first positive-negative reversal resist is formed to 5 μm or less. Forming a thick film metal electrode.
(7) In the step of forming the second positive-negative inversion type resist, the liquid second positive-negative inversion type resist is formed on the upper surface of the cured first positive-negative inversion type resist. Any one of the preceding items (1) to (6), including a step of forming and a step of curing the second positive-negative reversal resist which has been liquefied by pre-baking. A method of forming the thick film metal electrode as described.
(8) In the step of forming the second positive-negative reversal resist, the thickness of the cured second positive-negative reversal resist is formed to 3 μm or more. Forming a thick film metal electrode.
(9) A method for forming a thick film resist having a thickness of 7 μm or more formed on an upper surface of a circuit element layer formed on a silicon carbide substrate, wherein the upper surface of the circuit element layer is subjected to HMDS treatment. Forming a first positive-negative reversal resist having a first viscosity value on the HMDS-treated upper surface of the circuit element layer; and on the first positive-negative reversal resist. A second positive negative having a second viscosity value larger than the first viscosity value so that a total thickness of the first and second positive / negative reversal resists is 7 μm or more. Forming a reverse resist, and a method for forming a thick film resist.
(10) The method for forming a thick film resist as described in (9) above, wherein the first viscosity value is 30 cp or less and the second viscosity value is 80 cp or more.
(11) exposing the first and second positive / negative reversal resists through an exposure mask having a light-shielding portion; and after the exposure, the first and second positive / negative reversal resists Baking the resist to invert the characteristics of the first and second positive / negative reversal resists from positive to negative, and after the bake treatment, the first and second positive / negative reversal types The method according to (9) or (10) above, comprising a step of exposing the entire surface of the resist and a step of developing the first and second positive-negative reversal resists after the entire surface exposure. A method for forming a thick film resist.
(12) The step of forming the first positive / negative inversion type resist includes the step of forming the liquid first positive / negative inversion type resist on the upper surface of the circuit element layer that has been subjected to the HMDS treatment. And the step of curing the first positive-negative reversal resist that has been liquefied by pre-bake, and the thickness according to any one of the preceding items (9) to (11), Method for forming a film resist.
(13) In the step of forming the first positive-negative reversal resist, the thickness of the cured first positive-negative reversal resist is formed to 5 μm or less. Of forming a thick film resist.
(14) In the step of forming the second positive-negative inversion type resist, the liquid second positive-negative inversion type resist is formed on the upper surface of the cured first positive-negative inversion type resist. Any one of the above items (9) to (13), including a step of forming, and a step of curing the second positive-negative reversal resist that has been liquefied by pre-baking. A method for forming the thick film resist as described.
(15) In the step of forming the second positive-negative reversal resist, the thickness of the cured second positive-negative reversal resist is formed to 3 μm or more. Of forming a thick film resist.

本発明の一観点によれば、ＨＭＤＳ処理された回路素子層の上面に、第１の粘性値を有した第１のポジ−ネガ反転型レジストを形成することにより、均一な厚さとされ、かつある程度の厚さ（例えば、５μｍ以下）とされた第１のポジ−ネガ反転型レジストを形成することが可能となる。   According to one aspect of the present invention, the first positive-negative reversal resist having the first viscosity value is formed on the upper surface of the circuit element layer that has been subjected to the HMDS process, thereby obtaining a uniform thickness, and It becomes possible to form the first positive-negative inversion resist having a certain thickness (for example, 5 μm or less).

また、第１のポジ−ネガ反転型レジスト上に、第１の粘性値よりも大きい第２の粘性値を有した第２のポジ−ネガ反転型レジストを形成することで、第１のポジ−ネガ反転型レジスト上に、均一な厚さとされ、かつある程度の厚さ（例えば、３μｍ以上）とされた第２のポジ−ネガ反転型レジストを形成することが可能となる。
これにより、第１及び第２のポジ−ネガ反転型レジストよりなり、かつ厚さが７μｍ以上とされたポジ−ネガ反転型レジスト（厚膜レジスト）の面内バラツキ（不均一性）を、所望の範囲内（炭化珪素基板の直径が３インチ、エッジカットが５ｍｍの場合、例えば、５％以内）にすることができる。 Further, by forming a second positive / negative reversal resist having a second viscosity value larger than the first viscosity value on the first positive / negative reversal resist, the first positive / negative reversal resist is formed. A second positive-negative reversal resist having a uniform thickness and a certain thickness (for example, 3 μm or more) can be formed on the negative reversal resist.
Thereby, the in-plane variation (non-uniformity) of the positive-negative reversal resist (thick film resist) made of the first and second positive-negative reversal resists and having a thickness of 7 μm or more is desired. (For example, within 5% when the diameter of the silicon carbide substrate is 3 inches and the edge cut is 5 mm).

また、回路素子層の上面のうち、厚膜金属電極が形成される電極形成面と対向する遮光部を有した露光用マスクを介して、第１及び第２のポジ−ネガ反転型レジストを露光し、次いで、第１及び第２のポジ−ネガ反転型レジストをベーク処理することで、第１及び第２のポジ−ネガ反転型レジストの特性をポジからネガに反転させ、次いで、第１及び第２のポジ−ネガ反転型レジストを全面露光し、その後、第１及び第２のポジ−ネガ反転型レジストを現像処理することで、第１及び第２のポジ−ネガ反転型レジスト（厚膜レジスト）に、電極形成面を露出し、かつ良好な逆テーパー形状とされた開口部を形成することが可能となる。   Further, the first and second positive / negative reversal resists are exposed through an exposure mask having a light shielding portion facing an electrode forming surface on which a thick film metal electrode is formed on the upper surface of the circuit element layer. Then, the first and second positive-negative inversion type resists are baked to invert the characteristics of the first and second positive-negative inversion type resists from positive to negative. The entire surface of the second positive-negative reversal resist is exposed, and then the first and second positive-negative reversal resists are developed, whereby the first and second positive-negative reversal resists (thick film) In the resist), it is possible to expose the electrode forming surface and form an opening having a good reverse taper shape.

さらに、開口部を形成後に、第１及び第２のポジ−ネガ反転型レジストをポストベークし、次いで、第２のポジ−ネガ反転型レジストの上面側から、蒸着法により、厚膜金属電極の母材となり、かつ厚さが６μｍ以上とされた金属膜を成膜し、その後、第１及び第２のポジ−ネガ反転型レジスト（厚膜レジスト）をリフトオフすることで、炭化珪素基板の面内に、厚さが６μｍ以上とされ、かつ良好な形状（エッジ部にバリがない形状）とされた厚膜金属電極を形成できる。   Further, after the opening is formed, the first and second positive / negative inversion type resists are post-baked, and then the thick film metal electrode is formed from the upper surface side of the second positive / negative inversion type resist by vapor deposition. The surface of the silicon carbide substrate is formed by forming a metal film having a thickness of 6 μm or more as a base material and then lifting off the first and second positive-negative inversion resists (thick film resists). Inside, a thick film metal electrode having a thickness of 6 μm or more and a good shape (a shape having no burr at the edge portion) can be formed.

本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１）である。It is sectional drawing (the 1) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その２）である。It is sectional drawing (the 2) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その３）である。It is sectional drawing (the 3) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その４）である。It is sectional drawing (the 4) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その５）である。It is sectional drawing (the 5) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その６）である。It is sectional drawing (the 6) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その７）である。It is sectional drawing (the 7) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その８）である。It is sectional drawing (the 8) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その９）である。It is sectional drawing (the 9) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１０）である。It is sectional drawing (the 10) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１１）である。It is sectional drawing (the 11) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１２）である。It is sectional drawing (the 12) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１３）である。It is sectional drawing (the 13) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１４）である。It is sectional drawing (the 14) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１５）である。It is sectional drawing (the 15) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図（その１６）である。It is sectional drawing (the 16) which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 炭化珪素基板の中央部に形成された開口部の一部を走査型電子顕微鏡により撮影した断面写真である。It is the cross-sectional photograph which image | photographed some opening parts formed in the center part of the silicon carbide substrate with the scanning electron microscope. 炭化珪素基板の外周部に形成された開口部の一部を走査型電子顕微鏡により撮影した断面写真である。It is the cross-sectional photograph which image | photographed a part of opening part formed in the outer peripheral part of the silicon carbide substrate with the scanning electron microscope. 図１６に示す工程処理後の厚膜金属電極の表面を光学顕微鏡により撮影した写真である。It is the photograph which image | photographed the surface of the thick film metal electrode after the process shown in FIG. 16 with the optical microscope.

以下、図面を参照して本発明を適用した実施の形態について詳細に説明する。なお、以下の説明で用いる図面は、本発明の実施形態の構成を説明するためのものであり、図示される各部の大きさや厚さや寸法等は、実際の炭化珪素デバイスの寸法関係とは異なる場合がある。   Embodiments to which the present invention is applied will be described below in detail with reference to the drawings. The drawings used in the following description are for explaining the configuration of the embodiment of the present invention, and the size, thickness, dimensions, and the like of each part shown in the drawings are different from the dimensional relationship of an actual silicon carbide device. There is a case.

（実施の形態）
図１〜図１６は、本発明の実施の形態に係る厚膜金属電極の形成工程を示す断面図である。また、図１〜図１４は、本実施の形態に係る厚さが７μｍ以上の厚膜レジスト２７（図６〜図１４参照）の形成方法を説明するための図である。 (Embodiment)
1-16 is sectional drawing which shows the formation process of the thick film metal electrode which concerns on embodiment of this invention. 1 to 14 are views for explaining a method of forming a thick film resist 27 (see FIGS. 6 to 14) having a thickness of 7 μm or more according to the present embodiment.

図１〜図１６を参照して、図１６に示す本実施の形態の厚さが６μｍ以上の厚膜金属電極１３（パッド電極）の形成方法について説明する。
始めに、図１に示す工程では、炭化珪素基板１１の表面１１ａに回路素子層１２が形成された構造体１４を準備する。炭化珪素基板１１としては、例えば、直径が３インチのものを用いることが可能である。本実施の形態では、一例として、直径が３インチの炭化珪素基板１１を用いた場合を例に挙げて以下の説明を行う。 With reference to FIGS. 1-16, the formation method of the thick film metal electrode 13 (pad electrode) whose thickness of this Embodiment shown in FIG. 16 is 6 micrometers or more is demonstrated.
First, in the step shown in FIG. 1, a structure 14 in which a circuit element layer 12 is formed on the surface 11 a of the silicon carbide substrate 11 is prepared. As silicon carbide substrate 11, for example, a substrate having a diameter of 3 inches can be used. In the present embodiment, as an example, the following description will be given by taking as an example the case of using silicon carbide substrate 11 having a diameter of 3 inches.

回路素子層１２は、周知の手法により形成することができる。図１６に示す炭化珪素デバイス１０が、例えば、パワーデバイスの場合、回路素子層１２には、パワーデバイス素子（図示せず）が形成されている。
回路素子層１２の上面１２ａは、図１６に示す厚膜金属電極１３が形成される電極形成面１２ｂを有する。電極形成面１２ｂは、パワーデバイス素子（図示せず）と電気的に接続された図示していない導体（図１６に示す厚膜金属電極１３と接続される導体）の上面を露出している。 The circuit element layer 12 can be formed by a known method. When the silicon carbide device 10 shown in FIG. 16 is a power device, for example, a power device element (not shown) is formed in the circuit element layer 12.
The upper surface 12a of the circuit element layer 12 has an electrode forming surface 12b on which the thick metal electrode 13 shown in FIG. 16 is formed. The electrode forming surface 12b exposes the upper surface of a conductor (not shown) electrically connected to a power device element (not shown) (conductor connected to the thick film metal electrode 13 shown in FIG. 16).

次いで、図２に示す工程では、構造体１４を構成する回路素子層１２の上面１２ａ（電極形成面１２ｂを含む）に、ＨＭＤＳ（ヘキサメチルジシラザン）液１５を供給することで、ＨＭＤＳ処理（表面処理の１種）を行なう。
これにより、回路素子層１２の上面１２ａを疎水性にすることができる。なお、後述する図３に示す液状とされた第１のポジ−ネガ反転型レジスト２１−１は、疎水性で、かつ第１の粘性値（小さい粘性値）を有したレジスト液である。第１の粘性値は、例えば、３０ｃｐ以下にすることが好ましい。 Next, in the process shown in FIG. 2, the HMDS treatment (hexamethyldisilazane) solution 15 is supplied to the upper surface 12 a (including the electrode formation surface 12 b) of the circuit element layer 12 constituting the structure 14, thereby 1 type of surface treatment).
Thereby, the upper surface 12a of the circuit element layer 12 can be made hydrophobic. Note that the first positive / negative reversal resist 21-1 in liquid form shown in FIG. 3 to be described later is a resist solution that is hydrophobic and has a first viscosity value (small viscosity value). For example, the first viscosity value is preferably 30 cp or less.

このように、ＨＭＤＳ処理により、回路素子層１２の上面１２ａを疎水性にすることで、回路素子層１２の上面１２ａに、液状とされた第１のポジ−ネガ反転型レジスト２１−１（図３参照）を滴下させた後に行なう構造体１４の回転（液状とされた第１のポジ−ネガ反転型レジスト２１−１を均一な厚さにするための回転）により、粘性値の低い第１のポジ−ネガ反転型レジスト２１−１が構造体１４の外側に流れ出ることを抑制可能となる。
これにより、後述する図３に示す工程において、回路素子層１２の上面１２ａに、液状とされた第１のポジ−ネガ反転型レジスト２１を均一な厚さで形成できる。 As described above, the upper surface 12a of the circuit element layer 12 is made hydrophobic by the HMDS process, so that the first positive-negative inversion resist 21-1 (see FIG. 1) having a low viscosity value due to the rotation of the structure 14 performed after dripping (see FIG. 3) (rotation to make the first positive-negative reversal resist 21-1 in a liquid state uniform thickness). This positive / negative reversal resist 21-1 can be prevented from flowing out of the structure 14.
Thereby, in the step shown in FIG. 3 to be described later, the liquid first positive-negative inversion type resist 21 can be formed on the upper surface 12a of the circuit element layer 12 with a uniform thickness.

次いで、図３に示す工程では、回転軸１６の上端に接続されたステージ１７上に、図２に示す構造体１４を固定（例えば、吸着）し、次いで、ＨＭＤＳ処理された回路素子層１２の上面１２ａ側に配置されたディスペンサー１８から、第１の粘性値を有し、かつ液状とされた第１のポジ−ネガ反転型レジスト２１−１を滴下供給する。   Next, in the process shown in FIG. 3, the structure 14 shown in FIG. 2 is fixed (for example, adsorbed) on the stage 17 connected to the upper end of the rotating shaft 16, and then the circuit element layer 12 subjected to HMDS treatment. A first positive-negative reversal resist 21-1 having a first viscosity value and liquid is supplied dropwise from a dispenser 18 disposed on the upper surface 12a side.

次いで、ステージ１７上に固定された構造体１４を、回転軸１６を介して、所定の回転数（例えば、１２００ｒｐｍ）で一定時間回転させることで、炭化珪素基板１１の面内において、液状とされた第１のポジ−ネガ反転型レジスト２１−１の厚さＴ１を均一にする。
このとき、第１のポジ−ネガ反転型レジスト２１−１の厚さＴ１は、後述する図４に示す工程で行なうプリベークにより、硬化した第１のポジ−ネガ反転型レジスト２１−２の厚さＴ２が５μｍ以下となるように設定する。 Next, the structure 14 fixed on the stage 17 is turned into a liquid state in the plane of the silicon carbide substrate 11 by rotating the structure 14 through the rotation shaft 16 at a predetermined rotation speed (for example, 1200 rpm) for a predetermined time. Further, the thickness T1 of the first positive-negative reversal resist 21-1 is made uniform.
At this time, the thickness T1 of the first positive / negative reversal resist 21-1 is equal to the thickness of the first positive / negative reversal resist 21-2 cured by pre-baking in the step shown in FIG. is T 2 is set to be 5μm or less.

また、１回の液状とされた第１のポジ−ネガ反転型レジスト２１−１の滴下、及び回転により、液状とされた第１のポジ−ネガ反転型レジスト２１−１の厚さを十分に確保できない場合には、図３で説明した処理を複数回行なってもよい。   Further, the first positive-negative reversal resist 21-1 made liquid by dripping and rotating the first positive-negative reversal resist 21-1 made liquid once can sufficiently increase the thickness of the first positive-negative reversal resist 21-1 made liquid. If it cannot be secured, the processing described in FIG. 3 may be performed a plurality of times.

なお、第１のポジ−ネガ反転型レジスト２１−１の第１の粘性値は、小さい値であるため、第１のポジ−ネガ反転型レジスト２１−１の滴下後に行なう構造体１４の回転により、構造体１４の外側に流れやすい。
そのため、第１のポジ−ネガ反転型レジスト２１−１の滴下、及び回転を複数回繰り返したとしても、図４に示す第１のポジ−ネガ反転型レジスト２１−２の厚さＴ２が５μｍを超えるように、第１のポジ−ネガ反転型レジスト２１−２を形成することは非常に困難である。 Since the first viscosity value of the first positive-negative reversal resist 21-1 is a small value, the structure 14 is rotated after the first positive-negative reversal resist 21-1 is dropped. It tends to flow outside the structure 14.
Therefore, the first positive - dropping negative reverse type resist 21-1, and also the rotated repeated several times, first positive shown in Figure 4 - is the thickness T 2 of the negative reverse type resist 21-2 5 [mu] m Therefore, it is very difficult to form the first positive / negative inversion resist 21-2.

次いで、図４に示す工程では、ヒーター２３上に、液状とされた第１のポジ−ネガ反転型レジスト２１−１が形成された構造体１４を載置し、その後、ヒーター２３の熱により、液状とされた第１のポジ−ネガ反転型レジスト２１−１をプリベークして硬化させる。
具体的には、例えば、加熱温度が１００℃、加熱時間が６０秒の条件で、液状とされた第１のポジ−ネガ反転型レジスト２１−１をプリベーク処理する。 Next, in the process shown in FIG. 4, the structure 14 in which the liquid first positive-negative inversion resist 21-1 is formed is placed on the heater 23, and then, by the heat of the heater 23, The liquid first positive-negative reversal resist 21-1 is prebaked and cured.
Specifically, for example, the first positive-negative reversal resist 21-1 in a liquid state is pre-baked under the conditions of a heating temperature of 100 ° C. and a heating time of 60 seconds.

これにより、厚さＴ２が５μｍ以下とされ、かつ硬化した第１のポジ−ネガ反転型レジスト２１−２（以下、単に「第１のポジ−ネガ反転型レジスト２１−２」という）が形成される。なお、図３及び図４に示す工程が、第１のポジ−ネガ反転型レジスト２１−２の形成工程に相当する。 Thus, the second thickness T 2 is a 5μm or less, and the first positive cured - negative reverse type resist 21-2 (hereinafter, simply "first positive - negative reverse type resist 21-2" hereinafter) is formed Is done. The steps shown in FIGS. 3 and 4 correspond to the step of forming the first positive / negative reversal resist 21-2.

次いで、図５に示す工程では、回転軸１６の上端に接続されたステージ１７上に、第１のポジ−ネガ反転型レジスト２１−２が形成された構造体１４を固定（例えば、吸着）し、次いで、第１のポジ−ネガ反転型レジスト２１−２の上面２１−２ａ側に配置されたディスペンサー２５から、第１の粘性値よりも大きい第２の粘性値を有し、かつ液状とされた第２のポジ−ネガ反転型レジスト２６−１を滴下供給する。
液状とされた第２のポジ−ネガ反転型レジスト２６−１は、第２のポジ−ネガ反転型レジスト２６−１を滴下後に構造体１４を回転させた際に、粘性値の小さい第１のポジ−ネガ反転型レジスト２６−１と比較して、構造体１４の外側に流れにくいレジストである。第１の粘性値が３０ｃｐ以下の場合、第２の粘性値は、例えば、８０ｃｐ以上にするとよい。 Next, in the process shown in FIG. 5, the structure 14 in which the first positive-negative reversal resist 21-2 is formed is fixed (for example, adsorbed) on the stage 17 connected to the upper end of the rotating shaft 16. Next, the dispenser 25 disposed on the upper surface 21-2a side of the first positive-negative reversal resist 21-2 has a second viscosity value larger than the first viscosity value and is made liquid. The second positive / negative reversal resist 26-1 is supplied dropwise.
The second positive / negative reversal resist 26-1 in liquid form is a first viscosity having a small viscosity value when the structure 14 is rotated after the second positive / negative reversal resist 26-1 is dropped. Compared with the positive / negative reversal resist 26-1, the resist is less likely to flow outside the structure 14. When the first viscosity value is 30 cp or less, the second viscosity value may be 80 cp or more, for example.

次いで、ステージ１７上に固定された構造体１４を、回転軸１６を介して、所定の回転数（例えば、２５００ｒｐｍ）で一定時間回転させることで、炭化珪素基板１１の面内において、液状とされた第２のポジ−ネガ反転型レジスト２６−１の厚さＴ３を均一にする。
このとき、第２のポジ−ネガ反転型レジスト２６−１の厚さＴ３は、後述する図６に示す工程で行なうプリベークにより、硬化した第２のポジ−ネガ反転型レジスト２６−２の厚さＴ４が３μｍ以上となるように設定する。 Next, the structure 14 fixed on the stage 17 is turned into a liquid state in the plane of the silicon carbide substrate 11 by rotating the structure 14 through the rotation shaft 16 at a predetermined rotation speed (for example, 2500 rpm) for a predetermined time. second positive was - a uniform thickness T 3 negative reverse type resist 26-1.
At this time, the second positive - thickness T 3 of the negative reverse type resist 26-1, the pre-baking carried out in the step shown in FIG. 6 to be described later, the second positive cured - thickness of negative reverse type resist 26-2 The thickness T 4 is set to be 3 μm or more.

また、図５に示す工程では、後述する図６に示す第１のポジ−ネガ反転型レジスト２１−２の厚さＴ２、及び硬化した第２のポジ−ネガ反転型レジスト２６−２の厚さＴ４の合計の厚さＴ５が７μｍ以上となるように、液状とされた第２のポジ−ネガ反転型レジスト２６−１を形成する。 In the step shown in FIG. 5, the thickness T 2 of the first positive / negative reversal resist 21-2 shown in FIG. 6 and the thickness of the cured second positive / negative reversal resist 26-2 shown in FIG. It is so that the total thickness T 5 of the T 4 is equal to or greater than 7 [mu] m, a second positive, which is a liquid - forming a negative reverse type resist 26-1.

次いで、図６に示す工程では、ヒーター２３上に、液状とされた第２のポジ−ネガ反転型レジスト２６−１が形成された構造体１４を載置し、その後、ヒーター２３の熱により、液状とされた第２のポジ−ネガ反転型レジスト２６−１をプリベークして硬化させる。
具体的には、例えば、加熱温度が１００℃、加熱時間が９０秒の条件で、液状とされた第２のポジ−ネガ反転型レジスト２６−１をプリベーク処理する。 Next, in the process shown in FIG. 6, the structure 14 in which the second positive-negative reversal resist 26-1 in a liquid state is formed is placed on the heater 23, and then, by the heat of the heater 23, The liquid second positive / negative reversal resist 26-1 is pre-baked and cured.
Specifically, for example, the liquid second positive-negative inversion type resist 26-1 is pre-baked under the conditions of a heating temperature of 100 ° C. and a heating time of 90 seconds.

これにより、厚さＴ４が３μｍ以上とされ、かつ硬化した第２のポジ−ネガ反転型レジスト２６−２（以下、単に「第２のポジ−ネガ反転型レジスト２６−２」という）が形成される。なお、図５及び図６に示す工程が、第２のポジ−ネガ反転型レジスト２６−２の形成工程に相当する。
また、以下の説明では、硬化した第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２よりなるポジ−ネガ反転型レジストを厚膜レジスト２７という。 Thus, the thickness T 4 is greater than or equal to 3 [mu] m, and cured a second positive - negative reverse type resist 26-2 (hereinafter, simply "the second positive - negative reverse type resist 26-2" hereinafter) is formed Is done. The process shown in FIGS. 5 and 6 corresponds to the process of forming the second positive / negative reversal resist 26-2.
Further, in the following description, the positive-negative inversion type resist composed of the cured first and second positive-negative inversion type resists 21-2 and 26-2 is referred to as a thick film resist 27.

次いで、図７に示す工程では、露光装置（図示せず）内のステージ上に、厚膜レジスト２７（硬化した第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２）が形成された構造体１４を載置する。
次いで、透明基板２８（例えば、ガラス基板）、及び透明基板２８に形成され、かつ電極形成面１２ｂと対向する遮光部２９（例えば、クロムマスク）を有した露光用マスク３１を介して、厚膜レジスト２７を露光する。
厚膜レジスト２７の厚さＴ５（第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２の合計の厚さ）が７．５μｍの場合、図７に示す工程での露光量は、例えば、５５ｍＪ／ｃｍ２とすることができる。 Next, in the process shown in FIG. 7, thick film resists 27 (cured first and second positive-negative reversal resists 21-2 and 26-2) are placed on a stage in an exposure apparatus (not shown). The formed structure 14 is placed.
Next, a thick film is formed through a transparent substrate 28 (for example, a glass substrate) and an exposure mask 31 formed on the transparent substrate 28 and having a light shielding portion 29 (for example, a chrome mask) facing the electrode forming surface 12b. The resist 27 is exposed.
When the thickness T 5 of the thick film resist 27 (the total thickness of the first and second positive-negative inversion resists 21-2 and 26-2) is 7.5 μm, the exposure in the process shown in FIG. The amount can be, for example, 55 mJ / cm 2 .

この段階では、厚膜レジスト２７は、ポジ型感光性レジストの特性を有している。そのため、この段階では、光が照射された領域Ａに対応する厚膜レジスト２７が現像液に溶けやすくなり、光が照射されていない領域Ｂ（遮光部２９と対向する領域）に対応する厚膜レジスト２７が現像液に溶解されない。   At this stage, the thick film resist 27 has the characteristics of a positive photosensitive resist. Therefore, at this stage, the thick film resist 27 corresponding to the region A irradiated with light is easily dissolved in the developer, and the thick film corresponding to the region B (region opposed to the light shielding portion 29) not irradiated with light. The resist 27 is not dissolved in the developer.

なお、図７では、遮光部３１の外形と領域Ｂの外形とが略等しくなるように図示したが、実際には、露光装置として縮小投影型露光装置（具体的には、ステッパー）を用いて露光を行なうので、領域Ｂの外形は、遮光部２９の外形よりも小さくなる。   In FIG. 7, the outer shape of the light-shielding portion 31 and the outer shape of the region B are illustrated to be substantially equal, but actually, a reduction projection type exposure apparatus (specifically, a stepper) is used as the exposure apparatus. Since the exposure is performed, the outer shape of the region B is smaller than the outer shape of the light shielding portion 29.

次いで、図８に示す工程では、ヒーター２３上に、厚膜レジスト２７が形成された構造体１４を載置し、その後、ヒーター２３の熱により、厚膜レジスト２７をベーク処理（反転ベーク処理）することで、厚膜レジスト２７の特性をポジからネガに反転させる。
具体的には、例えば、加熱温度が１１５℃、加熱時間が１２０秒の条件で、厚膜レジスト２７をベーク処理する。 Next, in the process shown in FIG. 8, the structure 14 on which the thick film resist 27 is formed is placed on the heater 23, and then the thick film resist 27 is baked by the heat of the heater 23 (reverse baking process). This reverses the characteristics of the thick film resist 27 from positive to negative.
Specifically, for example, the thick film resist 27 is baked under the conditions of a heating temperature of 115 ° C. and a heating time of 120 seconds.

これにより、ネガ型とされた厚膜レジスト２７のうち、電極形成面１２ｂの上方に位置する部分に、断面が逆テーパー形状とされ、かつ現像液に溶解しやすい領域Ｃが形成され、領域Ｃ以外の部分に現像液に溶解されない領域Ｄが形成される。   As a result, in the negative-type thick film resist 27, a region C having a reverse tapered shape and easily dissolved in the developer is formed in a portion located above the electrode forming surface 12b. Regions D that are not dissolved in the developer are formed in the other portions.

次いで、図９に示す工程では、露光装置（図示せず）内のステージ上に、ネガ型とされた厚膜レジスト２７が形成された構造体１４を載置する。
次いで、遮光部が形成されていない露光用マスク３３を介して、第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２を全面露光する。このときの露光量は、図７に示す工程での露光量の１０倍程度とするとよい。
厚膜レジスト２７の厚さＴ５が７．５μｍの場合、図９に示す工程での露光量は、例えば、４０００ｍＪ／ｃｍ２とすることができる。 Next, in the step shown in FIG. 9, the structure 14 on which the negative thick resist 27 is formed is placed on a stage in an exposure apparatus (not shown).
Next, the first and second positive / negative reversal resists 21-2 and 26-2 are exposed to the entire surface through the exposure mask 33 in which the light shielding portion is not formed. The exposure amount at this time is preferably about 10 times the exposure amount in the step shown in FIG.
When the thickness T 5 of the thick film resist 27 is 7.5 [mu] m, the exposure amount in the step shown in FIG. 9, for example, it is a 4000 mJ / cm 2.

次いで、図１０に示す工程では、回転軸３５の上端に接続されたステージ３６上に、全面露光された厚膜レジスト２７が形成された構造体１４を固定（例えば、吸着）し、次いで、第２のポジ−ネガ反転型レジスト２６−２の上面２６−２ａ側に配置されたディスペンサー３８から、現像液４１を滴下供給する。これにより、第２のポジ−ネガ反転型レジスト２６−２の上面２６−２ａに、表面張力により、現像液４１が配置される。この段階では、構造体１４を回転させない。   Next, in the step shown in FIG. 10, the structure 14 on which the entire surface exposed thick film resist 27 is formed is fixed (for example, adsorbed) on the stage 36 connected to the upper end of the rotating shaft 35, and then the first The developer 41 is supplied dropwise from a dispenser 38 disposed on the upper surface 26-2a side of the second positive-negative reversal resist 26-2. As a result, the developer 41 is disposed on the upper surface 26-2a of the second positive-negative reversal resist 26-2 by surface tension. At this stage, the structure 14 is not rotated.

次いで、図１１に示す工程では、現像液４１により、図１０に示す領域Ｃに形成された厚膜レジスト２７を溶解させることで、断面が逆テーパー形状とされ、かつ電極形成面１２ｂを露出する開口部４２を形成する。この段階では、構造体１４を回転させない。   Next, in the step shown in FIG. 11, the thick film resist 27 formed in the region C shown in FIG. 10 is dissolved by the developing solution 41, so that the cross section has an inversely tapered shape and the electrode forming surface 12b is exposed. Opening 42 is formed. At this stage, the structure 14 is not rotated.

次いで、図１２に示す工程では、開口部４２が形成された厚膜レジスト２７を有した構造体１４の上面側に、ディスペンサー４３を介して、純水４４を供給した状態で、所定の回転数で構造体１４を回転させて、洗浄を行なう。   Next, in the process shown in FIG. 12, the pure water 44 is supplied to the upper surface side of the structure 14 having the thick film resist 27 in which the opening 42 is formed, via the dispenser 43, and a predetermined number of rotations. Then, the structure 14 is rotated to perform cleaning.

次いで、図１３に示す工程では、図１２に示す純水４４を停止させ、その後、構造体１４を高速回転させることで、開口部４２が形成された厚膜レジスト２７を有した構造体１４を乾燥させる。   Next, in the step shown in FIG. 13, the pure water 44 shown in FIG. 12 is stopped, and then the structure 14 is rotated at a high speed, whereby the structure 14 having the thick film resist 27 in which the opening 42 is formed. dry.

次いで、図１４に示す工程では、ヒーター２３上に、開口部４２が形成された厚膜レジスト２７を有した構造体１４を載置し、その後、ヒーター２３の熱により、厚膜レジスト２７をポストベーク処理する。
具体的には、例えば、加熱温度が１０５℃、加熱時間が６０秒の条件で、厚膜レジスト２７をポストベーク処理する。 Next, in the process shown in FIG. 14, the structure 14 having the thick film resist 27 in which the opening 42 is formed is placed on the heater 23, and then the thick film resist 27 is post-posted by the heat of the heater 23. Bake.
Specifically, for example, the thick film resist 27 is post-baked under the conditions of a heating temperature of 105 ° C. and a heating time of 60 seconds.

次いで、図１５に示す工程では、開口部４２が形成された厚膜レジスト２７を有した構造体１４の上面側から、蒸着法により、厚膜金属電極１３の母材となり、かつ厚さが６μｍ以上とされた金属膜４５を成膜する。金属膜４５としては、例えば、アルミニウム膜を用いることができる。
これにより、第２のポジ−ネガ反転型レジスト２６−２の上面２６−２ａ、及び電極形成面１２ｂに金属膜４５が成膜される。このとき、開口部４２の断面形状が逆テーパー形状になっているため、第２のポジ−ネガ反転型レジスト２６−２の上面２６−２ａに形成された金属膜４５と電極形成面１２ｂに形成された金属膜４５とは、完全に分離されており、接触していない。 Next, in the step shown in FIG. 15, from the upper surface side of the structure 14 having the thick film resist 27 in which the opening 42 is formed, the base material of the thick metal electrode 13 is formed by vapor deposition and the thickness is 6 μm. The metal film 45 as described above is formed. As the metal film 45, for example, an aluminum film can be used.
As a result, the metal film 45 is formed on the upper surface 26-2a of the second positive-negative reversal resist 26-2 and the electrode formation surface 12b. At this time, since the cross-sectional shape of the opening 42 is an inversely tapered shape, it is formed on the metal film 45 and the electrode forming surface 12b formed on the upper surface 26-2a of the second positive-negative reversal resist 26-2. The metal film 45 is completely separated and is not in contact with the metal film 45.

次いで、図１６に示す工程では、金属膜４５が形成された厚膜レジスト２７をリフトオフさせる。具体的には、例えば、図１５に示す構造体を、有機溶剤（例えば、アセトンやイソプロピルアルコール（ＩＰＡ））に浸漬させた状態で、超音波処理することで、金属膜４５が形成された厚膜レジスト２７をリフトオフさせる。   Next, in the step shown in FIG. 16, the thick film resist 27 on which the metal film 45 is formed is lifted off. Specifically, for example, the structure shown in FIG. 15 is subjected to ultrasonic treatment in a state where the structure is immersed in an organic solvent (for example, acetone or isopropyl alcohol (IPA)), thereby forming a thickness on which the metal film 45 is formed. The film resist 27 is lifted off.

これにより、炭化珪素基板１１と、炭化珪素基板１１上に形成された回路素子層１２と、回路素子層１２の電極形成面１２ｂに形成され、金属膜４５よりなり、かつ厚さＴ６が６μｍ以上とされた厚膜金属電極１３（パッド電極）と、を備えた炭化珪素デバイス１０が製造される。
厚膜金属電極１０は、ワイヤボンディング法により、金属ワイヤ（図示せず）が接続される外部接続用のパッド電極である。また、回路素子層１２には、パワーデバイス素子（図示せず）が形成されている。該パワーデバイス素子は、厚膜金属電極１３と電気的に接続されている。 Thereby, a silicon carbide substrate 11, a circuit element layer 12 formed on a silicon carbide substrate 11, is formed on the electrode formation surface 12b of the circuit element layer 12, made of a metal film 45, and a thickness T 6 is 6μm Silicon carbide device 10 having thick film metal electrode 13 (pad electrode) as described above is manufactured.
The thick film metal electrode 10 is a pad electrode for external connection to which a metal wire (not shown) is connected by a wire bonding method. In the circuit element layer 12, a power device element (not shown) is formed. The power device element is electrically connected to the thick film metal electrode 13.

なお、図１６では、１つの厚膜金属電極１３のみを図示したが、実際には、炭化珪素基板１１の外周部から中央部に亘って複数の厚膜金属電極１３が形成されている。また、図１６では、炭化珪素基板１１に対してかなり大きく厚膜金属電極１３を図示したが、厚膜金属電極１３は、実際には、かなり小さい。   In FIG. 16, only one thick film metal electrode 13 is illustrated, but actually, a plurality of thick film metal electrodes 13 are formed from the outer peripheral portion to the central portion of silicon carbide substrate 11. Further, in FIG. 16, thick film metal electrode 13 is illustrated as being considerably larger than silicon carbide substrate 11, but thick film metal electrode 13 is actually quite small.

本実施の形態の厚膜金属電極の形成方法によれば、ＨＭＤＳ処理された回路素子層１２の上面１２ａに、第１の粘性値を有した第１のポジ−ネガ反転型レジスト２１−２を形成することにより、均一な厚さとされ、かつある程度の厚さ（例えば、５μｍ以下）とされた第１のポジ−ネガ反転型レジスト２１−２を形成することが可能となる。   According to the method of forming the thick metal electrode of the present embodiment, the first positive-negative reversal resist 21-2 having the first viscosity value is applied to the upper surface 12a of the circuit element layer 12 that has been subjected to the HMDS process. By forming it, it is possible to form the first positive-negative inversion resist 21-2 having a uniform thickness and a certain thickness (for example, 5 μm or less).

また、第１のポジ−ネガ反転型レジスト２１−２上に、第１の粘性値よりも大きい第２の粘性値（例えば、８０ｃｐ以上）を有した第２のポジ−ネガ反転型レジスト２６−２を形成することで、均一な厚さとされ、かつある程度の厚さ（例えば、３μｍ以上）とされた第２のポジ−ネガ反転型レジスト２６−２を形成することが可能となる。
これにより、第１及び第２のポジ−ネガ反転型レジストよりなり、かつ厚さが７μｍ以上とされた厚膜レジスト２７の面内バラツキ（不均一性）を、所望の範囲内（炭化珪素基板１１の直径が３インチ、エッジカットが５ｍｍの場合、例えば、５％以内）にすることができる。 Further, the second positive / negative reversal resist 26-2 having a second viscosity value (for example, 80 cp or more) larger than the first viscosity value on the first positive / negative reversal resist 21-2. 2, it is possible to form the second positive-negative inversion resist 26-2 having a uniform thickness and a certain thickness (for example, 3 μm or more).
Thus, the in-plane variation (non-uniformity) of the thick film resist 27 made of the first and second positive-negative inversion resists and having a thickness of 7 μm or more is within a desired range (silicon carbide substrate). 11 is 3 inches in diameter and the edge cut is 5 mm, for example, within 5%).

また、回路素子層１２の上面１２ａのうち、厚膜金属電極１３が形成される電極形成面１２ｂと対向する遮光部２９を有した露光用マスク３１を介して、厚膜レジスト２７を露光し、次いで、厚膜レジスト２７をベーク処理することで、厚膜レジスト２７の特性をポジからネガに反転させ、次いで、厚膜レジスト２７を全面露光し、その後、厚膜レジスト２７を現像処理することで、厚膜レジスト２７に、電極形成面１２ｂを露出し、かつ良好な逆テーパー形状とされた開口部４２を形成することが可能となる。   Further, the thick film resist 27 is exposed through an exposure mask 31 having a light shielding portion 29 facing the electrode forming surface 12b on which the thick metal electrode 13 is formed on the upper surface 12a of the circuit element layer 12, Next, by baking the thick film resist 27, the characteristics of the thick film resist 27 are reversed from positive to negative, then the entire surface of the thick film resist 27 is exposed, and then the thick film resist 27 is developed. The thick film resist 27 can expose the electrode forming surface 12b and form an opening 42 having a good reverse taper shape.

さらに、開口部４２を形成後に、厚膜レジスト２７をポストベークし、次いで、第２のポジ−ネガ反転型レジスト２６−２の上面側２６−２ａから、蒸着法により、厚膜金属電極１３の母材となり、かつ厚さＴ６が６μｍ以上とされた金属膜４５を成膜し、その後、厚膜レジスト２７をリフトオフすることで、炭化珪素基板１１の面内に、厚さＴ６が６μｍ以上とされ、かつ良好な形状（エッジ部にバリがない形状）とされた厚膜金属電極１３を形成できる。 Further, after the opening 42 is formed, the thick film resist 27 is post-baked, and then the thick film metal electrode 13 is formed from the upper surface side 26-2a of the second positive-negative inversion type resist 26-2 by vapor deposition. A metal film 45 which is a base material and has a thickness T 6 of 6 μm or more is formed, and then the thick film resist 27 is lifted off, so that the thickness T 6 is 6 μm in the plane of the silicon carbide substrate 11. The thick film metal electrode 13 having the above-described shape and a good shape (a shape having no burr at the edge portion) can be formed.

また、本実施の形態の厚膜レジストの形成方法によれば、厚さが７μｍ以上とされ、かつ面内バラツキ（不均一性）が所望の範囲内（炭化珪素基板１１の直径が３インチ、エッジカットが５ｍｍの場合、例えば、５％以内）とされた厚膜レジスト２７を形成することができる。   Further, according to the thick film resist forming method of the present embodiment, the thickness is 7 μm or more and the in-plane variation (non-uniformity) is within a desired range (the diameter of silicon carbide substrate 11 is 3 inches, When the edge cut is 5 mm, for example, a thick film resist 27 having a thickness of 5% or less can be formed.

以上、本発明の好ましい実施の形態について詳述したが、本発明はかかる特定の実施の形態に限定されるものではなく、特許請求の範囲内に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。   The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and within the scope of the present invention described in the claims, Various modifications and changes are possible.

例えば、本実施の形態では、第１の粘性値が３０ｃｐ以下の第１のポジ−ネガ反転型レジスト２１−２を形成する場合を例に挙げて説明したが、第１の粘性値が３０ｃｐ以下の第１のポジ−ネガ反転型レジスト２１−２に替えて、第１の粘性値が５０ｃｐ前後の値とされた第１のポジ−ネガ反転型レジスト２１−１を用いて、第１のポジ−ネガ反転型レジスト２１−２を形成してもよい。
この場合、本実施の形態の厚膜金属電極の形成方法及び厚膜レジストの形成方法と同様な効果を得ることができる。 For example, in the present embodiment, the case where the first positive-negative reversal resist 21-2 having the first viscosity value of 30 cp or less is described as an example, but the first viscosity value is 30 cp or less. In place of the first positive-negative reversal resist 21-2, a first positive-negative reversal resist 21-1 having a first viscosity value of about 50 cp is used. -Negative reversal resist 21-2 may be formed.
In this case, the same effects as those of the thick film metal electrode forming method and the thick film resist forming method of the present embodiment can be obtained.

また、本実施の形態では、一回の第２のポジ−ネガ反転型レジスト２６−１の滴下、及び回転により、均一な厚さとされた第２のポジ−ネガ反転型レジスト２６−１を形成する場合を例に挙げて説明したが、厚膜レジスト２７の厚さＴ５をさらに厚くしたい場合には、図５で説明した処理を複数回行なってもよい。 In the present embodiment, the second positive-negative reversal resist 26-1 having a uniform thickness is formed by dropping and rotating the second positive-negative reversal resist 26-1 once. In the case where the thickness T 5 of the thick film resist 27 is desired to be further increased, the processing described with reference to FIG. 5 may be performed a plurality of times.

さらに、本実施の形態では、一例として、直径が３インチの炭化珪素基板１１を用いた場合を例に挙げて説明したが、本発明は、直径が３インチ以上の大口径化された炭化珪素基板１１にも適用可能であり、本実施の形態と同様な効果を得ることができる。   Furthermore, in the present embodiment, as an example, the case where silicon carbide substrate 11 having a diameter of 3 inches is used has been described as an example. However, the present invention is a silicon carbide having a large diameter of 3 inches or more. The present invention can be applied to the substrate 11 and the same effect as that of the present embodiment can be obtained.

また、本実施の形態では、炭化珪素デバイス１０の一例として、パワーデバイスを例に挙げて説明したが、本発明は、高周波デバイス、及び高温動作デバイス等にも適用可能である。   In the present embodiment, a power device has been described as an example of silicon carbide device 10, but the present invention can also be applied to a high-frequency device, a high-temperature operation device, and the like.

以下、本発明の効果を、実施例を用いて具体的に説明する。なお、本発明は、下記実施例に限定されるものではない。   Hereinafter, the effect of the present invention will be specifically described with reference to examples. In addition, this invention is not limited to the following Example.

（実施例）
始めに、図１に示す構造体１４として、パワーデバイスを備えた回路素子層１２が形成された直径が３インチの炭化珪素基板１１を準備した。
次いで、図２に示す工程では、回路素子層１２の上面１２ａをＨＭＤＳ処理した。次いで、図３に示す工程では、ＨＭＤＳ処理された回路素子層１２の上面１２ａに、第１の粘性値が２９ｃｐとされた液状の第１のポジ−ネガ反転型レジスト２１−１を滴下させ、構造体１４を１２００ｒｐｍの速度で回転させることで、均一な厚さとされた第１のポジ−ネガ反転型レジスト２１−１を形成した。 (Example)
First, a silicon carbide substrate 11 having a diameter of 3 inches on which a circuit element layer 12 including a power device was formed was prepared as the structure 14 shown in FIG.
Next, in the step shown in FIG. 2, the upper surface 12a of the circuit element layer 12 was subjected to HMDS treatment. Next, in the step shown in FIG. 3, a liquid first positive-negative reversal resist 21-1 having a first viscosity value of 29 cp is dropped on the upper surface 12a of the circuit element layer 12 that has been subjected to HMDS treatment. By rotating the structure 14 at a speed of 1200 rpm, a first positive-negative reversal resist 21-1 having a uniform thickness was formed.

次いで、図４に示す工程では、ヒーター２３を用いた加熱（加熱温度１００℃、加熱時間６０秒）により、液状とされた第１のポジ−ネガ反転型レジスト２１−１を硬化させることで、第１のポジ−ネガ反転型レジスト２１−２を形成した。
第１のポジ−ネガ反転型レジスト２１−２の厚さＴ２は、５μｍであった。 Next, in the step shown in FIG. 4, the first positive-negative reversal resist 21-1, which has been liquefied, is cured by heating using the heater 23 (heating temperature 100 ° C., heating time 60 seconds). A first positive-negative inversion resist 21-2 was formed.
First positive - thickness T 2 of the negative reverse type resist 21-2 was 5 [mu] m.

次いで、図５に示す工程では、ＨＭＤＳ処理を行なうことなく、第１のポジ−ネガ反転型レジスト２１−２の上面２１−２ａに、第２の粘性値が８５ｃｐとされた液状の第２のポジ−ネガ反転型レジスト２６−１を滴下させ、構造体１４を２５００ｒｐｍの速度で回転させることで、均一な厚さとされた第２のポジ−ネガ反転型レジスト２６−１を形成した。   Next, in the step shown in FIG. 5, a liquid second liquid having a second viscosity value of 85 cp is formed on the upper surface 21-2a of the first positive-negative reversal resist 21-2 without performing HMDS treatment. The positive-negative reversal resist 26-1 was dropped, and the structure 14 was rotated at a speed of 2500 rpm to form a second positive-negative reversal resist 26-1 having a uniform thickness.

次いで、図６に示す工程では、ヒーター２３による加熱（加熱温度１００℃、加熱時間９０秒）により、液状とされた第２のポジ−ネガ反転型レジスト２６−１を硬化させることで、第２のポジ−ネガ反転型レジスト２６−２を形成した。このとき、第２のポジ−ネガ反転型レジスト２６−２の厚さＴ４は、３μｍであった。また、第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２よりなる厚膜レジスト２７の厚さＴ５は、８μｍ（７μｍ以上）であった。
また、エッジカットが５ｍｍの条件で厚膜レジスト２７の面内の膜厚を測定し、厚膜レジスト２７の面内バラツキ（不均一性）を測定した結果、目標値である５％よりも小さい４．８％であった。 Next, in the step shown in FIG. 6, the second positive-negative inversion resist 26-1, which has been liquefied, is cured by heating with the heater 23 (heating temperature 100 ° C., heating time 90 seconds), so that the second The positive-negative reversal resist 26-2 was formed. At this time, the thickness T 4 of the second positive / negative inversion resist 26-2 was 3 μm. Further, the thickness T 5 of the thick film resist 27 made of the first and second positive-negative reversal resists 21-2 and 26-2 was 8 μm (7 μm or more).
In addition, as a result of measuring the in-plane film thickness of the thick film resist 27 under the condition that the edge cut is 5 mm and measuring the in-plane variation (non-uniformity) of the thick film resist 27, the target value is smaller than 5%. It was 4.8%.

次いで、図７に示す工程では、縮小投影型露光装置（具体的には、ステッパー）により、露光用マスク３１を介して、第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２を露光した。このときの露光量は、５５ｍＪ／ｃｍ２を用いた。
次いで、図８に示す工程では、ヒーター２３により、厚膜レジスト２７をベーク処理（加熱温度１１５℃、加熱時間１２０秒）することで、厚膜レジスト２７を構成する第１及び第２のポジ−ネガ反転型レジスト２１−２，２６−２の特性をポジからネガに反転させることで、図１０に示す現像液４１により溶解され、かつ逆テーパー形状とされた領域Ｃを形成した。 Next, in the process shown in FIG. 7, the first and second positive / negative reversal resists 21-2 and 26- are passed through the exposure mask 31 by a reduction projection type exposure apparatus (specifically, a stepper). 2 was exposed. The exposure amount at this time was 55 mJ / cm 2 .
Next, in the step shown in FIG. 8, the thick film resist 27 is baked by the heater 23 (heating temperature 115 ° C., heating time 120 seconds), whereby the first and second positive electrodes constituting the thick film resist 27 are formed. By reversing the characteristics of the negative reversal resists 21-2 and 26-2 from positive to negative, a region C was formed which was dissolved by the developer 41 shown in FIG.

次いで、図９に示す工程では、厚膜レジスト２７を全面露光した。このときの露光量は、４０００ｍＪ／ｃｍ２とした。次いで、図１０及び図１１に示す工程では、現像液４１により、領域Ｃに対応する部分の厚膜レジスト２７を溶解して、逆テーパー形状とされた開口部４２を形成した。
次いで、図１２に示す工程では、純水４４により、開口部４２が形成された厚膜レジスト２７を備えた構造体１４に付着した現像液４１を洗い流した。 Next, in the step shown in FIG. 9, the entire surface of the thick film resist 27 was exposed. The exposure amount at this time was 4000 mJ / cm 2 . Next, in the process shown in FIGS. 10 and 11, the thick film resist 27 corresponding to the region C was dissolved by the developer 41 to form the opening 42 having a reverse taper shape.
Next, in the step shown in FIG. 12, the developer 41 attached to the structure 14 including the thick film resist 27 in which the opening 42 was formed was washed away with pure water 44.

次いで、図１３に示す工程では、図１２に示す純水４４を停止し、構造体１４を高速で回転させることで、開口部４２が形成された厚膜レジスト２７を備えた構造体１４を乾燥させる。
次いで、図１４に示す工程では、ヒーター２３により、開口部４２が形成された厚膜レジスト２７のポストベーク処理（加熱温度１０５℃、加熱時間６０秒）を行なう。このとき、開口部４２の上端の幅は、縦１４５０μｍ×横１４５０μｍであった。 Next, in the process shown in FIG. 13, the pure water 44 shown in FIG. 12 is stopped and the structure 14 is rotated at a high speed to dry the structure 14 including the thick film resist 27 in which the opening 42 is formed. Let
Next, in the step shown in FIG. 14, the heater 23 performs post-baking treatment (heating temperature 105 ° C., heating time 60 seconds) on the thick film resist 27 in which the opening 42 is formed. At this time, the width of the upper end of the opening 42 was 1450 μm long × 1450 μm wide.

次いで、図１５に示す工程では、第２のポジ−ネガ反転型レジスト２６−２の上面２６−２ａ側から、蒸着法により、金属膜４５として厚さＴ６が６μｍのアルミニウム膜を成膜した。
次いで、図１６に示す工程では、有機溶剤（例えば、アセトンやイソプロピルアルコール（ＩＰＡ））に図１５に示す構造体を浸漬させた状態で、超音波処理することで、金属膜４５が形成された厚膜レジスト２７をリフトオフさせることで、電極形成面１２ｂに、厚さＴ６が６μｍとされた厚膜金属電極１３（パッド電極）を形成した。 Next, in the process shown in FIG. 15, an aluminum film having a thickness T6 of 6 μm is formed as the metal film 45 from the upper surface 26-2a side of the second positive-negative reversal resist 26-2 by vapor deposition. .
Next, in the process shown in FIG. 16, the metal film 45 is formed by ultrasonic treatment in a state where the structure shown in FIG. 15 is immersed in an organic solvent (for example, acetone or isopropyl alcohol (IPA)). By lifting off the thick film resist 27, a thick film metal electrode 13 (pad electrode) having a thickness T6 of 6 μm was formed on the electrode forming surface 12b.

図１７は、炭化珪素基板の中央部に形成された開口部の一部を走査型電子顕微鏡により撮影した断面写真であり、図１８は、炭化珪素基板の外周部に形成された開口部の一部を走査型電子顕微鏡により撮影した断面写真である。図１７及び図１８は、図１４に示す工程の処理が完了した厚膜レジスト２７を撮影した写真である。   FIG. 17 is a cross-sectional photograph obtained by photographing a part of the opening formed in the central portion of the silicon carbide substrate with a scanning electron microscope. FIG. 18 shows one of the openings formed in the outer peripheral portion of the silicon carbide substrate. It is the cross-sectional photograph which image | photographed the part with the scanning electron microscope. 17 and 18 are photographs of the thick film resist 27 that has been subjected to the process shown in FIG.

図１７及び図１８を参照するに、炭化珪素基板１１の中央部に形成された厚膜レジスト２７の厚さと、炭化珪素基板１１の外周部に形成された厚膜レジスト２７の厚さとの間に差がほとんどないことが確認できた。
また、炭化珪素基板１１の中央部に形成された開口部４２の逆テーパー形状と、炭化珪素基板１１の外周部に形成された開口部４２の逆テーパー形状との間に、形状の差はほとんどみられなかった。つまり、炭化珪素基板１１の面内における開口部４２の形状ばらつきが小さいことが確認できた。 Referring to FIGS. 17 and 18, between the thickness of thick film resist 27 formed at the center portion of silicon carbide substrate 11 and the thickness of thick film resist 27 formed at the outer peripheral portion of silicon carbide substrate 11. It was confirmed that there was almost no difference.
Further, there is almost no difference in shape between the reverse tapered shape of the opening 42 formed in the central portion of the silicon carbide substrate 11 and the reverse tapered shape of the opening 42 formed in the outer peripheral portion of the silicon carbide substrate 11. It was not seen. That is, it was confirmed that the variation in the shape of the opening 42 in the plane of the silicon carbide substrate 11 was small.

図１９は、図１６に示す工程処理後の厚膜金属電極の表面を光学顕微鏡により撮影した写真である。
図１９を参照するに、厚膜金属電極１３のエッジ部（外周縁）にバリは確認できなかった。つまり、厚膜金属電極１３が良好な形状に形成されたことが確認できた。 FIG. 19 is a photograph of the surface of the thick metal electrode after the process shown in FIG. 16 taken with an optical microscope.
Referring to FIG. 19, no burr was confirmed at the edge (outer peripheral edge) of the thick film metal electrode 13. That is, it was confirmed that the thick film metal electrode 13 was formed in a good shape.

上記結果から、本実施例によれば、８μｍの厚さとされた厚膜レジスト２７の面内バラツキ（不均一性）を４．８％（所望の範囲（５％以下）内の値）にすることができると共に、厚さが６μｍ以上とされ、かつ良好な形状（エッジ部にバリがない形状）とされた厚膜金属電極１３を形成できることが確認できた。   From the above results, according to this embodiment, the in-plane variation (non-uniformity) of the thick film resist 27 having a thickness of 8 μm is set to 4.8% (a value within a desired range (5% or less)). In addition, it was confirmed that the thick metal electrode 13 having a thickness of 6 μm or more and a good shape (a shape having no burr at the edge portion) can be formed.

本発明の厚膜金属電極の形成方法、及び厚膜レジストの形成方法は、炭化珪素基板に形成された炭化珪素デバイスを構成する厚膜金属電極の形成、及びリフトオフ法によりに厚膜金属電極を形成する際に使用する厚膜レジストの形成に利用可能である。   A method for forming a thick film metal electrode and a method for forming a thick film resist according to the present invention include the formation of a thick film metal electrode constituting a silicon carbide device formed on a silicon carbide substrate and the lift-off method. It can be used for forming a thick film resist used for forming.

１０…炭化珪素デバイス、１１…炭化珪素基板、１１ａ…表面、１２…回路素子層、
１２ａ…上面、１２ｂ…電極形成面、１３…厚膜金属電極、１４…構造体、１５…ＨＭＤＳ液、１６，３５…回転軸、１７，３６…ステージ、１８，２５，３８，４３…ディスペンサー、２１−１…液状とされた第１のポジ−ネガ反転型レジスト、２１−２…第１のポジ−ネガ反転型レジスト、２１−２ａ，２６−２ａ…上面、２３…ヒーター、２６−１…液状とされた第２のポジ−ネガ反転型レジスト、２６−２…第２のポジ−ネガ反転型レジスト、２７…厚膜レジスト、２８…透明基板、２９…遮光部、３１…露光用マスク、４１…現像液、４２…開口部、４４…純水、４５…金属膜、Ａ，Ｂ，Ｃ，Ｄ…領域、Ｔ１，Ｔ２，Ｔ３，Ｔ４，Ｔ５…厚さ DESCRIPTION OF SYMBOLS 10 ... Silicon carbide device, 11 ... Silicon carbide substrate, 11a ... Surface, 12 ... Circuit element layer,
12a ... upper surface, 12b ... electrode forming surface, 13 ... thick film metal electrode, 14 ... structure, 15 ... HMDS liquid, 16, 35 ... rotating shaft, 17, 36 ... stage, 18, 25, 38, 43 ... dispenser, 21-1... First positive / negative reversal resist in liquid state, 21-2. First positive / negative reversal resist, 21-2a, 26-2a, upper surface, 23 ... heater, 26-1. Liquid second positive-negative reversal resist, 26-2 ... second positive-negative reversal resist, 27 ... thick film resist, 28 ... transparent substrate, 29 ... light-shielding portion, 31 ... exposure mask, 41 ... developer, 42 ... opening, 44 ... purified water, 45 ... metal film, A, B, C, D ... region, T 1, T 2, T 3, T 4, T 5 ... thickness

Claims (5)

炭化珪素基板に形成された回路素子層の上面に、厚さが６μｍ以上の厚膜金属電極を形成する厚膜金属電極の形成方法であって、
前記回路素子層の上面をＨＭＤＳ処理する工程と、
前記ＨＭＤＳ処理された前記回路素子層の上面に、３０ｃｐ以下である第１の粘性値を有した第１のポジ−ネガ反転型レジストを形成する工程と、
前記第１のポジ−ネガ反転型レジスト上に、前記第１及び第２のポジ−ネガ反転型レジストの合計の厚さが７μｍ以上となるように、前記第１の粘性値よりも大きく、８０ｃｐ以上である第２の粘性値を有した第２のポジ−ネガ反転型レジストを形成する工程と、
前記回路素子層の上面のうち、前記厚膜金属電極が形成される電極形成面と対向する遮光部を有した露光用マスクを介して、前記第１及び第２のポジ−ネガ反転型レジストを露光する工程と、
前記露光後に、前記第１及び第２のポジ−ネガ反転型レジストをベーク処理することで、前記第１及び第２のポジ−ネガ反転型レジストの特性をポジからネガに反転させる工程と、
前記ベーク処理後に、前記第１及び第２のポジ−ネガ反転型レジストを全面露光する工程と、
前記全面露光後に、前記第１及び第２のポジ−ネガ反転型レジストを現像処理することにより、前記第１及び第２のポジ−ネガ反転型レジストに、逆テーパー形状とされ、かつ前記電極形成面を露出する開口部を形成する工程と、
前記開口部を形成後に、前記第１及び第２のポジ−ネガ反転型レジストをポストベークする工程と、
前記ポストベーク後に、前記第２のポジ−ネガ反転型レジストの上面側から、蒸着法により、前記厚膜金属電極の母材となり、かつ厚さが６μｍ以上とされた金属膜を成膜する工程と、
前記第１及び第２のポジ−ネガ反転型レジストをリフトオフする工程と、
を含み、
前記第１のポジ−ネガ反転型レジストを形成する工程は、前記ＨＭＤＳ処理された前記回路素子層の上面に、液状とされた前記第１のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第１のポジ−ネガ反転型レジストを硬化させる工程と、を含み、硬化した前記第１のポジ−ネガ反転型レジストの厚さを５μｍ以下に形成し、
前記第２のポジ−ネガ反転型レジストを形成する工程は、硬化した前記第１のポジ−ネガ反転型レジストの上面に、液状とされた前記第２のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第２のポジ−ネガ反転型レジストを硬化させる工程と、を含み、硬化した前記第２のポジ−ネガ反転型レジストの厚さを３μｍ以上に形成することを特徴とする厚膜金属電極の形成方法。 A method for forming a thick film metal electrode, wherein a thick film metal electrode having a thickness of 6 μm or more is formed on an upper surface of a circuit element layer formed on a silicon carbide substrate,
HMDS treatment of the upper surface of the circuit element layer;
Forming a first positive-negative reversal resist having a first viscosity value of 30 cp or less on an upper surface of the HMDS-treated circuit element layer;
The negative reverse type resist on said first and second positive - - the first positive as the total thickness of the negative reverse type resist becomes more 7 [mu] m, much larger than the said first viscosity value, Forming a second positive-negative reversal resist having a second viscosity value of 80 cp or more ;
The first and second positive-negative reversal resists are exposed through an exposure mask having a light-shielding portion facing an electrode formation surface on which the thick-film metal electrode is formed on the upper surface of the circuit element layer. A step of exposing;
After the exposure, the first and second positive-negative reversal resists are baked to reverse the characteristics of the first and second positive-negative reversal resists from positive to negative;
After the baking process, exposing the entire surface of the first and second positive-negative reversal resists;
After the entire surface exposure, the first and second positive / negative reversal resists are developed to give the first and second positive / negative reversal resists a reverse taper shape and the electrode formation. Forming an opening exposing the surface;
Post-baking the first and second positive-negative reversal resists after forming the openings;
After the post-baking, a step of forming a metal film which is a base material of the thick metal electrode and has a thickness of 6 μm or more from the upper surface side of the second positive-negative reversal resist by vapor deposition When,
Lifting off the first and second positive-negative reversal resists;
Only including,
The step of forming the first positive / negative inversion type resist includes the step of forming the liquid first positive / negative inversion type resist on the upper surface of the circuit element layer that has been subjected to the HMDS treatment, and a pre-bake. A step of curing the first positive-negative reversal resist that has been liquefied, and forming a thickness of the cured first positive-negative reversal resist to 5 μm or less,
The step of forming the second positive / negative inversion type resist includes the step of forming the liquid second positive / negative inversion type resist on the upper surface of the cured first positive / negative inversion type resist. And curing the second positive-negative reversal resist that has been liquefied by pre-baking, and forming the thickness of the cured second positive-negative reversal resist to 3 μm or more. A method for forming a thick film metal electrode. 前記厚膜金属電極は、ワイヤボンディング法により、金属ワイヤが接続される外部接続用の電極であることを特徴とする請求項１記載の厚膜金属電極の形成方法。 The thick-film metal electrode by a wire bonding method, forming method of claim 1 Symbol placement of the thick film metal electrode, characterized in that an electrode for external connection metal wires are connected. 前記回路素子層には、パワーデバイス素子が形成されており、
前記パワーデバイス素子は、前記厚膜金属電極と電気的に接続されていることを特徴とする請求項１または２記載の厚膜金属電極の形成方法。 In the circuit element layer, a power device element is formed,
The power device elements forming method according to claim 1 or 2, wherein the thick-film metal electrode, characterized in that connected the thick-film metal electrode and electrically. 炭化珪素基板に形成された回路素子層の上面に、厚さが７μｍ以上の厚膜レジストを形成する厚膜レジストの形成方法であって、
前記回路素子層の上面をＨＭＤＳ処理する工程と、
前記ＨＭＤＳ処理された前記回路素子層の上面に、３０ｃｐ以下である第１の粘性値を有した第１のポジ−ネガ反転型レジストを形成する工程と、
前記第１のポジ−ネガ反転型レジスト上に、前記第１及び第２のポジ−ネガ反転型レジストの合計の厚さが７μｍ以上となるように、前記第１の粘性値よりも大きく、８０ｃｐ以上である第２の粘性値を有した第２のポジ−ネガ反転型レジストを形成する工程と、
を含み、
前記第１のポジ−ネガ反転型レジストを形成する工程は、前記ＨＭＤＳ処理された前記回路素子層の上面に、液状とされた前記第１のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第１のポジ−ネガ反転型レジストを硬化させる工程と、を含み、硬化した前記第１のポジ−ネガ反転型レジストの厚さを５μｍ以下に形成し、
前記第２のポジ−ネガ反転型レジストを形成する工程は、硬化した前記第１のポジ−ネガ反転型レジストの上面に、液状とされた前記第２のポジ−ネガ反転型レジストを形成する工程と、プリベークにより、液状とされた前記第２のポジ−ネガ反転型レジストを硬化させる工程と、を含み、硬化した前記第２のポジ−ネガ反転型レジストの厚さを３μｍ以上に形成することを特徴とする厚膜レジストの形成方法。 A thick film resist forming method for forming a thick film resist having a thickness of 7 μm or more on an upper surface of a circuit element layer formed on a silicon carbide substrate,
HMDS treatment of the upper surface of the circuit element layer;
Forming a first positive-negative reversal resist having a first viscosity value of 30 cp or less on an upper surface of the HMDS-treated circuit element layer;
The negative reverse type resist on said first and second positive - - the first positive as the total thickness of the negative reverse type resist becomes more 7 [mu] m, much larger than the said first viscosity value, Forming a second positive-negative reversal resist having a second viscosity value of 80 cp or more ;
Only including,
The step of forming the first positive / negative inversion type resist includes the step of forming the liquid first positive / negative inversion type resist on the upper surface of the circuit element layer that has been subjected to the HMDS treatment, and a pre-bake. A step of curing the first positive-negative reversal resist that has been liquefied, and forming a thickness of the cured first positive-negative reversal resist to 5 μm or less,
The step of forming the second positive / negative inversion type resist includes the step of forming the liquid second positive / negative inversion type resist on the upper surface of the cured first positive / negative inversion type resist. And curing the second positive-negative reversal resist that has been liquefied by pre-baking, and forming the thickness of the cured second positive-negative reversal resist to 3 μm or more. A method for forming a thick film resist. 遮光部を有した露光用マスクを介して、前記第１及び第２のポジ−ネガ反転型レジストを露光する工程と、
前記露光後に、前記第１及び第２のポジ−ネガ反転型レジストをベーク処理することで、前記第１及び第２のポジ−ネガ反転型レジストの特性をポジからネガに反転させる工程と、
前記ベーク処理後に、前記第１及び第２のポジ−ネガ反転型レジストを全面露光する工程と、
前記全面露光後に、前記第１及び第２のポジ−ネガ反転型レジストを現像処理する工程と、
を含むことを特徴とする請求項４記載の厚膜レジストの形成方法。 Exposing the first and second positive-negative reversal resists through an exposure mask having a light shielding portion;
After the exposure, the first and second positive-negative reversal resists are baked to reverse the characteristics of the first and second positive-negative reversal resists from positive to negative;
After the baking process, exposing the entire surface of the first and second positive-negative reversal resists;
Developing the first and second positive-negative reversal resists after the overall exposure;
The method for forming a thick film resist according to claim 4 , comprising:
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