JP5810667B2 - 光デバイス及び検出装置 - Google Patents

光デバイス及び検出装置 Download PDF

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Publication number
JP5810667B2
JP5810667B2 JP2011139526A JP2011139526A JP5810667B2 JP 5810667 B2 JP5810667 B2 JP 5810667B2 JP 2011139526 A JP2011139526 A JP 2011139526A JP 2011139526 A JP2011139526 A JP 2011139526A JP 5810667 B2 JP5810667 B2 JP 5810667B2
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optical device
metal
period
metal nanoparticles
light
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Japanese (ja)
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JP2013007614A5 (enExample
JP2013007614A (ja
Inventor
尼子　淳
淳 尼子
山田　耕平
耕平 山田
達徳 宮澤
達徳 宮澤
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Seiko Epson Corp
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Seiko Epson Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Optics & Photonics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2011139526A 2011-06-23 2011-06-23 光デバイス及び検出装置 Active JP5810667B2 (ja)

Priority Applications (2)

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JP2011139526A JP5810667B2 (ja) 2011-06-23 2011-06-23 光デバイス及び検出装置
US13/530,741 US8836946B2 (en) 2011-06-23 2012-06-22 Optical device and detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011139526A JP5810667B2 (ja) 2011-06-23 2011-06-23 光デバイス及び検出装置

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JP2013007614A JP2013007614A (ja) 2013-01-10
JP2013007614A5 JP2013007614A5 (enExample) 2014-07-24
JP5810667B2 true JP5810667B2 (ja) 2015-11-11

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JP (1) JP5810667B2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5928026B2 (ja) * 2012-03-15 2016-06-01 セイコーエプソン株式会社 センサーチップおよびその製造方法並びに検出装置
JP5304939B1 (ja) 2012-05-31 2013-10-02 大日本印刷株式会社 光学積層体、偏光板、偏光板の製造方法、画像表示装置、画像表示装置の製造方法及び画像表示装置の視認性改善方法
JP2014163868A (ja) * 2013-02-27 2014-09-08 Seiko Epson Corp 光学素子、分析装置、分析方法、および電子機器
JP2014163869A (ja) * 2013-02-27 2014-09-08 Seiko Epson Corp 光学素子、分析装置、分析方法、および電子機器
KR101542142B1 (ko) * 2013-02-27 2015-08-05 한국과학기술원 나노리소그래피용 마이크로팁 어레이, 이의 제조방법 및 이를 이용한 나노리소그래피 방법
JP5737635B2 (ja) * 2013-03-01 2015-06-17 大日本印刷株式会社 金属粒子が担持されたフィルムおよびフィルム製造方法
JP2014169955A (ja) * 2013-03-05 2014-09-18 Seiko Epson Corp 分析装置、分析方法、これらに用いる光学素子および電子機器、並びに光学素子の設計方法
JP2014173920A (ja) * 2013-03-07 2014-09-22 Seiko Epson Corp 分析装置、分析方法、これらに用いる光学素子および電子機器、並びに光学素子の設計方法
JP6248403B2 (ja) * 2013-03-28 2017-12-20 セイコーエプソン株式会社 検出装置及び電子機器
TWI498540B (zh) * 2013-05-30 2015-09-01 Univ Nat Cheng Kung 具不對稱粒子形狀之定域化表面電漿共振檢測系統
JP6252053B2 (ja) * 2013-09-09 2017-12-27 大日本印刷株式会社 表面増強ラマン散乱測定用基板、及びその製造方法
JP6365817B2 (ja) 2014-02-17 2018-08-01 セイコーエプソン株式会社 分析装置、及び電子機器
JP2015152492A (ja) * 2014-02-17 2015-08-24 セイコーエプソン株式会社 分析装置、及び電子機器
JP2015215178A (ja) 2014-05-08 2015-12-03 セイコーエプソン株式会社 電場増強素子、分析装置及び電子機器
JP6456683B2 (ja) * 2014-12-25 2019-01-23 富士電機株式会社 光増強素子及び分析装置
JP2016142617A (ja) * 2015-02-02 2016-08-08 セイコーエプソン株式会社 電場増強素子、分析装置、及び電子機器
US9778183B2 (en) 2015-08-20 2017-10-03 Industrial Technology Research Institute Sensing chip
JP6613736B2 (ja) * 2015-09-07 2019-12-04 セイコーエプソン株式会社 物質検出方法および物質検出装置
JP6586867B2 (ja) * 2015-12-08 2019-10-09 セイコーエプソン株式会社 電場増強素子およびラマン分光装置
CN105576497A (zh) * 2016-03-01 2016-05-11 中国科学院半导体研究所 表面增强的相干反斯托克斯拉曼散射的结构
JP6792341B2 (ja) * 2016-03-30 2020-11-25 キッコーマン株式会社 金属ナノ構造体アレイ及び電場増強デバイス
JP6714427B2 (ja) * 2016-05-17 2020-06-24 アズビル株式会社 粒子検出装置及び粒子検出装置の検査方法
US10371874B2 (en) * 2016-06-20 2019-08-06 Yonsei University, University—Industry Foundation (UIF) Substrate unit of nanostructure assembly type, optical imaging apparatus including the same, and controlling method thereof
US20180059026A1 (en) * 2016-08-23 2018-03-01 Optokey, Inc. Surface Enhanced Raman Spectroscopy (SERS) Structure For Double Resonance Output
KR101935892B1 (ko) * 2016-10-05 2019-01-07 이화여자대학교 산학협력단 인광 발광 구조체 및 이의 제조방법
US10408752B2 (en) * 2016-10-18 2019-09-10 National Taiwan University Plasmonic sensor
US10371642B2 (en) * 2016-12-08 2019-08-06 The Board Of Trustees Of The Leland Stanford Junior University Raman topography system and methods of imaging
CN106645093A (zh) * 2017-03-21 2017-05-10 中国工程物理研究院材料研究所 一种拉曼光谱面成像设备
CN106950218B (zh) * 2017-04-28 2023-11-14 南方科技大学 一种表面增强拉曼散射基底及其制备方法
CN107389656A (zh) * 2017-07-31 2017-11-24 江南大学 拉曼光谱表征反复冻融过程中牛肉脂肪品质变化的方法
US10620122B2 (en) * 2018-04-05 2020-04-14 Picoyune, Llc Equilibrium plasmonic mercury sensing apparatus and methods
US20240159671A1 (en) * 2018-04-05 2024-05-16 Jay James Equilibrium Plasmonic Analyte Sensing Apparatus and Methods
CN111610177B (zh) * 2020-06-11 2023-03-24 北京大学 一种micro LED芯片的拉曼增强的检测方法及其装置
CN112072319B (zh) * 2020-08-31 2022-03-01 泉州师范学院 一种金属等离激元纳米光学天线的制备方法
CN112304493B (zh) * 2020-10-29 2022-04-15 西北工业大学 一种基于ccd相机的光学压敏涂料幅频特性检测方法
US12235236B2 (en) * 2021-05-28 2025-02-25 Northeastern University Sensors with capacitive transduction via metamaterials for gas detection
US11959859B2 (en) 2021-06-02 2024-04-16 Edwin Thomas Carlen Multi-gas detection system and method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3452837B2 (ja) 1999-06-14 2003-10-06 理化学研究所 局在プラズモン共鳴センサー
JP2002357543A (ja) * 2001-06-01 2002-12-13 Mitsubishi Chemicals Corp 分析素子、並びにそれを用いた試料の分析方法
JP4231701B2 (ja) 2002-01-08 2009-03-04 富士フイルム株式会社 プラズモン共鳴デバイス
US7079250B2 (en) 2002-01-08 2006-07-18 Fuji Photo Film Co., Ltd. Structure, structure manufacturing method and sensor using the same
JP3897703B2 (ja) 2002-01-11 2007-03-28 キヤノン株式会社 センサ装置およびそれを用いた検査方法
US7399445B2 (en) 2002-01-11 2008-07-15 Canon Kabushiki Kaisha Chemical sensor
NZ551786A (en) * 2004-05-19 2011-03-31 Vp Holding Llc Optical sensor with layered plasmon structure for enhanced detection of chemical groups by surface enhanced raman scattering
GB0424458D0 (en) 2004-11-04 2004-12-08 Mesophotonics Ltd Metal nano-void photonic crystal for enhanced raman spectroscopy
GB2419940B (en) 2004-11-04 2007-03-07 Mesophotonics Ltd Metal nano-void photonic crystal for enhanced raman spectroscopy
JP2007240361A (ja) 2006-03-09 2007-09-20 Sekisui Chem Co Ltd 局在プラズモン増強センサ
JP4994682B2 (ja) 2006-03-16 2012-08-08 キヤノン株式会社 検知素子、該検知素子を用いた標的物質検知装置及び標的物質を検知する方法
JP5286515B2 (ja) 2006-05-11 2013-09-11 国立大学法人秋田大学 センサチップ及びセンサチップ製造方法
JP2008196898A (ja) * 2007-02-09 2008-08-28 Osaka Prefecture プラズモン共鳴構造体及びその制御方法
JP2009250951A (ja) * 2008-04-11 2009-10-29 Fujifilm Corp 電場増強光デバイス
JP2010025753A (ja) 2008-07-18 2010-02-04 Hokkaido Univ 表面増強ラマン分光法、及び当該表面増強ラマン分光法を可能にする微細構造体
US8384892B2 (en) 2008-10-03 2013-02-26 Board Of Trustees Of The University Of Illinois Surface enhanced raman spectroscopy on optical resonator (e.g., photonic crystal) surfaces
JP2010096645A (ja) * 2008-10-17 2010-04-30 National Institute Of Advanced Industrial Science & Technology 周期構造を有するマイクロプレート、並びに、それを用いた表面プラズモン励起増強蛍光顕微鏡、蛍光マイクロプレートリーダーおよび特異的な抗原抗体反応の検出方法
JP5621394B2 (ja) 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2325635B1 (en) 2009-11-19 2017-05-03 Seiko Epson Corporation Sensor chip, sensor cartridge, and analysis apparatus
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置

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US20120327417A1 (en) 2012-12-27
US8836946B2 (en) 2014-09-16
JP2013007614A (ja) 2013-01-10

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