JP5810553B2 - 接合用積層体および接合体 - Google Patents

接合用積層体および接合体 Download PDF

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Publication number
JP5810553B2
JP5810553B2 JP2011041515A JP2011041515A JP5810553B2 JP 5810553 B2 JP5810553 B2 JP 5810553B2 JP 2011041515 A JP2011041515 A JP 2011041515A JP 2011041515 A JP2011041515 A JP 2011041515A JP 5810553 B2 JP5810553 B2 JP 5810553B2
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JP
Japan
Prior art keywords
layer
metal
metal nanoparticle
bonding
coating method
Prior art date
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Active
Application number
JP2011041515A
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English (en)
Japanese (ja)
Other versions
JP2012178507A (ja
Inventor
山崎　和彦
和彦 山崎
芙弓 馬渡
芙弓 馬渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
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Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP2011041515A priority Critical patent/JP5810553B2/ja
Priority to CN201210040714.6A priority patent/CN102649330B/zh
Priority to KR1020120018579A priority patent/KR101752931B1/ko
Priority to TW101106223A priority patent/TWI556973B/zh
Publication of JP2012178507A publication Critical patent/JP2012178507A/ja
Application granted granted Critical
Publication of JP5810553B2 publication Critical patent/JP5810553B2/ja
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
JP2011041515A 2011-02-28 2011-02-28 接合用積層体および接合体 Active JP5810553B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011041515A JP5810553B2 (ja) 2011-02-28 2011-02-28 接合用積層体および接合体
CN201210040714.6A CN102649330B (zh) 2011-02-28 2012-02-21 接合用层压体及接合体
KR1020120018579A KR101752931B1 (ko) 2011-02-28 2012-02-23 접합용 적층체 및 접합체
TW101106223A TWI556973B (zh) 2011-02-28 2012-02-24 接合用積層體及接合體與接合體之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011041515A JP5810553B2 (ja) 2011-02-28 2011-02-28 接合用積層体および接合体

Publications (2)

Publication Number Publication Date
JP2012178507A JP2012178507A (ja) 2012-09-13
JP5810553B2 true JP5810553B2 (ja) 2015-11-11

Family

ID=46691521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011041515A Active JP5810553B2 (ja) 2011-02-28 2011-02-28 接合用積層体および接合体

Country Status (4)

Country Link
JP (1) JP5810553B2 (ko)
KR (1) KR101752931B1 (ko)
CN (1) CN102649330B (ko)
TW (1) TWI556973B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5830302B2 (ja) * 2011-08-11 2015-12-09 古河電気工業株式会社 加熱接合用材料、加熱接合用シート体、及び加熱接合用成形体
AT513747B1 (de) 2013-02-28 2014-07-15 Mikroelektronik Ges Mit Beschränkter Haftung Ab Bestückungsverfahren für Schaltungsträger und Schaltungsträger
JP2015188035A (ja) * 2014-03-27 2015-10-29 セイコーエプソン株式会社 発光装置の製造方法、発光装置およびプロジェクター
TWI683322B (zh) * 2015-12-07 2020-01-21 日商哈利瑪化成股份有限公司 導電性糊劑之製造方法
WO2018042825A1 (ja) * 2016-08-30 2018-03-08 パナソニックＩｐマネジメント株式会社 色変換素子
JP6815133B2 (ja) 2016-08-31 2021-01-20 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
JP2019065229A (ja) * 2017-10-04 2019-04-25 コニカミノルタ株式会社 混合液の製造方法、混合液を製造するシステム、インク組成物、画像形成方法および画像形成物
KR102046225B1 (ko) * 2017-11-20 2019-11-19 동국대학교 산학협력단 측면 광전달 시스템
WO2019198328A1 (ja) * 2018-04-12 2019-10-17 パナソニックＩｐマネジメント株式会社 実装構造体およびナノ粒子実装材料
KR102243472B1 (ko) * 2018-12-17 2021-04-26 주식회사 경동원 전력반도체 접합용 소결 페이스트 조성물
WO2020190335A1 (en) * 2019-03-18 2020-09-24 Hewlett - Packard Development Company L.P. Three-dimensional object formation
CN110640354B (zh) * 2019-08-27 2022-03-04 北京康普锡威科技有限公司 一种预成型焊料及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1578559B1 (en) * 2002-09-18 2009-03-18 Ebara Corporation Bonding method
JP2005205696A (ja) * 2004-01-21 2005-08-04 Ebara Corp 接合用品
JP5012239B2 (ja) * 2007-06-13 2012-08-29 株式会社デンソー 接合方法及び接合体
WO2009035112A1 (ja) * 2007-09-12 2009-03-19 Mitsubishi Materials Corporation スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法
JP5515499B2 (ja) * 2008-08-08 2014-06-11 三菱マテリアル株式会社 サブストレート型太陽電池用の複合膜及びその製造方法
EP3163601B1 (en) * 2009-01-23 2020-03-11 Nichia Corporation Method of producing a semiconductor device by directly bonding silver on a surface of a semiconductor element with silver oxide on a surface of a base

Also Published As

Publication number Publication date
JP2012178507A (ja) 2012-09-13
CN102649330A (zh) 2012-08-29
KR101752931B1 (ko) 2017-07-03
KR20120098461A (ko) 2012-09-05
CN102649330B (zh) 2015-10-14
TW201247416A (en) 2012-12-01
TWI556973B (zh) 2016-11-11

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