JP5807220B2 - インターポーザ及びそれを用いた半導体モジュール - Google Patents
インターポーザ及びそれを用いた半導体モジュール Download PDFInfo
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- JP5807220B2 JP5807220B2 JP2010294618A JP2010294618A JP5807220B2 JP 5807220 B2 JP5807220 B2 JP 5807220B2 JP 2010294618 A JP2010294618 A JP 2010294618A JP 2010294618 A JP2010294618 A JP 2010294618A JP 5807220 B2 JP5807220 B2 JP 5807220B2
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Description
真空に維持されたキャビティを有する本体(構造体)と、
前記キャビティの内壁面に形成された熱反射領域と
を備えていることを特徴とするものである。
本発明の第1の観点によるインターポーザと、
前記インターポーザの一方の側に搭載された第1半導体デバイスと、
前記インターポーザの他方の側に搭載された第2半導体デバイスと
を備えていることを特徴とするものである。
本発明の第1実施形態のインターポーザを図2Aと図2Bに示す。図2Aはこのインターポーザの要部構成を示す部分断面図であり、図2Bは同インターポーザの全体構成を示す断面説明図である。
本発明の第2実施形態の半導体モジュールを図3Aと図3Bに示す。図3Aはこの半導体モジュールの全体構成を示す断面図であり、図3Bは図3Aの同半導体モジュールのA−A線に沿った断面図である。
本発明の第3実施形態の半導体モジュールを図4Aに示す。この半導体モジュールは、上述した第2実施形態の半導体モジュールM1に放熱板30を装着したものである。放熱板30は、基板10の裏面(下面)に密着して固定されている。
本発明の第4実施形態の半導体モジュールを図4Bに示す。この半導体モジュールは、上述した第2実施形態の半導体モジュールM1に、インレット32とアウトレット33を持つケース31を装着したものである。ケース31は、下面を開放した略直方体の箱状であり、基板10の表面(上面)に密着して固定されている、ケース31は、半導体モジュールM1の全体を覆って(包含して)いる。
本発明の第5実施形態の半導体モジュールを図5Aと図5Bに示す。図5Aはこの半導体モジュールの全体構成を示す断面図であり、図5Bは図5Aの同半導体モジュールのB−B線に沿った断面図である。
本発明の第6実施形態の半導体モジュールを図6Aに示す。この半導体モジュールは、上述した第5実施形態の半導体モジュールM2に放熱板30を装着したものである。放熱板30は、基板10の裏面(下面)に密着して固定されている。
本発明の第4実施形態の半導体モジュールを図4Bに示す。この半導体モジュールは、上述した第5実施形態の半導体モジュールM2に、上述した第4実施形態で使用したインレット32とアウトレット33を持つケース31を装着したものである。ケース31は、下面を開放した略直方体の箱状であり、基板10の表面(上面)に密着して固定されている、ケース31は、半導体モジュールM2の全体を覆って(包含して)いる。
次に、上述したインターポーザの形成方法について説明する。
図8は、本発明の第9実施形態のインターポーザの形成方法を示す。この方法は、上記インターポーザの形成方法の第2例である。
図9は、本発明の第10実施形態のインターポーザの形成方法を示す。この方法は、上記インターポーザの形成方法の第3例である。
図10は、本発明の第11実施形態のインターポーザの形成方法を示す。この方法は、上記インターポーザの形成方法の第4例である。図10において、図9におけるそれと同一の符号は、同一の構成要素を示している。
以上、本発明の実施形態について詳細な説明を行った。本明細書では、インターポーザの構成と、このインターポーザを用いた半導体モジュールについて記載したが、例示した構成以外にも多くの構成が可能である。
12a、12b 半導体デバイス
13 ボンディングワイヤ
14 貫通電極
15 導電性ボール
16 フィラー
17 接着剤
20a 上壁
20b 下壁
20c 側壁
21a、21b、21c 熱反射層
22a、22c 絶縁層
23 キャビティ
24 インターポーザ
25、26 熱源
30 放熱板
31 ケース
32 インレット
33 アウトレット
40 インターポーザ
41 キャビティ
42 貫通電極
43 キャビティ
43 導電性ボール
50 上壁
51 熱反射層
52 側壁
53 熱反射層
54 下壁
54 側壁
55 キャビティ
60 上壁
61 熱反射層
62 下壁
63 側壁
64 熱反射層
65 接着材
66 キャビティ
70 下壁
70a 下壁の母材
71 貫通電極
72 電気接続用パッド
74 熱反射層
75 上壁
76 開口
77 熱反射層
78 キャビティ
84 熱反射層
85 上壁
86 キャビティ
L 冷却用流体
M1 半導体モジュール
M2 半導体モジュール
P ポンプ
S 内部空間
T1 管
T2 管
Claims (6)
- 第1熱源と第2熱源の間に配置して使用されるインターポーザであって、
真空に維持されたキャビティを有する本体と、
前記キャビティの内壁面に形成された熱反射領域とを備え、
前記本体が、前記第1熱源に隣接する上壁と、前記第2熱源に隣接する下壁と、前記上壁と前記下壁を連結する側壁を備えていて、前記上壁と前記下壁と前記側壁が前記キャビティを画定しており、
前記上壁と前記下壁と前記側壁のうちの少なくとも一つが、他とは異なる材料から形成されていることを特徴とするインターポーザ。 - 前記熱反射領域が、前記上壁の内面と前記下壁の内面に形成され、前記側壁の内面には形成されていないことを特徴とする請求項1に記載のインターポーザ
- 前記本体が貫通電極を有していることを特徴とする請求項1または2に記載のインターポーザ。
- 請求項1〜3のいずれか1項に記載のインターポーザと、
前記インターポーザの前記上壁の側に搭載された第1半導体デバイスと、
前記インターポーザの前記下壁の側に搭載された第2半導体デバイスと
を備えていることを特徴とする半導体モジュール。 - 前記第1半導体デバイスの側に装着された放熱板をさらに備えていることを特徴とする請求項4に記載の半導体モジュール。
- 前記第1半導体デバイスと前記第2半導体デバイスと前記インターポーザを包含するケースと、冷却用流体を加圧して前記ケース内に導入する手段とをさらに備えていることを特徴とする請求項4に記載の半導体モジュール。
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JP2010294618A JP5807220B2 (ja) | 2010-12-30 | 2010-12-30 | インターポーザ及びそれを用いた半導体モジュール |
TW100149435A TW201241919A (en) | 2010-12-30 | 2011-12-28 | Interposer and semiconductor module using same |
US13/977,908 US9386685B2 (en) | 2010-12-30 | 2011-12-28 | Interposer and semiconductor module using the same |
PCT/JP2011/080528 WO2012091140A1 (ja) | 2010-12-30 | 2011-12-28 | インターポーザ及びそれを用いた半導体モジュール |
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JP2012142458A (ja) | 2012-07-26 |
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