JP5803775B2 - 強誘電体薄膜の製造方法 - Google Patents
強誘電体薄膜の製造方法 Download PDFInfo
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Description
特にゾルゲル法は、CVD法やスパッタリング法等に比べ、真空プロセスを必要としないため、製造コストも低く、広い面積の基板上に形成することも容易であるという利点がある。しかも、誘電体薄膜の形成に用いる溶液材料中の組成を変えることによって、膜中の組成を理論的比率にすることが容易で、かつ極めて薄い強誘電体薄膜が得られるため、大容量の薄膜キャパシタ等を形成する方法として期待されている。ゾルゲル法による製造方法では、一般的には、先ずゾルゲル液の調製を行い、この調製したゾルゲル液を基板上に塗布した後、所定温度で焼成等を行うことにより強誘電体薄膜が得られる。これまで、上記ゾルゲル法による強誘電体薄膜の製造方法においては、基板上へのゾルゲル液の塗布にはスピンコート法等が広く用いられてきた。スピンコート法は、ゾルゲル法による強誘電体薄膜の製造方法において、例えば、基板を高速回転させることにより液体を遠心力で除去するため、基板面内での膜厚均一性が高められるという点で優れるからである。
前記静電スプレー用液は、強誘電体薄膜形成用ゾルゲル液と、前記ゾルゲル液中の強誘電体薄膜を形成する金属の酸化物換算での金属比と同一組成を有し前記吐出口から吐出可能な粒径を有する粉末とが均一に混合された混合液であって、前記ゾルゲル液中に溶解している金属化合物を金属酸化物に換算した質量をA、前記粉末の質量をBとするとき、(A+B)に対するBの比率が、5%以上40%以下の範囲にあることを特徴とする強誘電体薄膜の製造方法を提供することにある。
本発明の静電スプレー用液は、強誘電体薄膜形成用ゾルゲル液と、ゾルゲル液中の強誘電体薄膜を形成する金属の酸化物換算での金属比と同一組成を有し前記吐出口から吐出可能な粒径を有する粉末とが均一に混合された混合液であって、ゾルゲル液中に溶解している金属化合物を金属酸化物に換算した質量をA、前記粉末の質量をBとするとき、(A+B)に対するBの比率が、5%以上40%以下の範囲にあることを特徴とするものである。
<静電スプレー用液を用いた強誘電体薄膜の製造方法>
本発明の強誘電体薄膜の製造方法では、上記静電スプレー用液をESD法によって噴射しながら強誘電体薄膜の成膜を所定の基板上に行う。以下同製造方法を図1を参照しながら説明する。
<評価>
実施例で得られたPZT強誘電体薄膜の評価は、走査電子顕微鏡SEM(S-4300SE、HITACHI製)により、膜厚測定並びに表面観察及び断面観察を行い、表面組織及び断面組織を観察した。また、表面形状測定装置(Dektak150、Veeco製)を用いて、PZT強誘電体薄膜の表面粗さRa(μm)を測り、Ra値による膜表面の平滑さから膜の緻密さを評価した。また、分光エリプソメトリー(M-2000D1、J.A.Woollam製)により、膜の屈折率を測定した。
11 ステージ
11a 導電層
12 シリンジ
13 ポンプ
14 キャピラリー
14a 吐出口
16 高圧電源装置
20 基板
20a 下部電極
21 混合液(静電スプレー用液)
Claims (2)
- 下部電極を有する基板の前記下部電極に向けて強誘電体薄膜形成用の静電スプレー用液をキャピラリーの吐出口から静電スプレーして前記静電スプレー用液を前記下部電極上に塗布して塗膜を形成し、前記塗膜を乾燥・仮焼した後、焼成して結晶化させることにより前記下部電極上に強誘電体薄膜を製造する方法において、
前記静電スプレー用液は、強誘電体薄膜形成用ゾルゲル液と、前記ゾルゲル液中の強誘電体薄膜を形成する金属の酸化物換算での金属比と同一組成を有し前記吐出口から吐出可能な粒径を有する粉末とが均一に混合された混合液であって、
前記ゾルゲル液中に溶解している金属化合物を金属酸化物に換算した質量をA、前記粉末の質量をBとするとき、(A+B)に対するBの比率が、5%以上40%以下の範囲にあることを特徴とする強誘電体薄膜の製造方法。 - キャピラリーの前記吐出口から静電スプレーして強誘電体薄膜を形成するための静電スプレー用液において、
強誘電体薄膜形成用ゾルゲル液と前記ゾルゲル液中の強誘電体薄膜を形成する金属の酸化物換算での金属比と同一組成であって前記吐出口から吐出可能な粒径を有する粉末とが均一に混合され、前記ゾルゲル液中に溶解している金属化合物を金属酸化物に換算した質量をA、前記粉末の質量をBとするとき、(A+B)に対するBの比率が、5%以上40%以下の範囲にあることを特徴とする静電スプレー用液。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2012075448A JP5803775B2 (ja) | 2012-03-29 | 2012-03-29 | 強誘電体薄膜の製造方法 |
TW102103138A TWI545235B (zh) | 2012-03-29 | 2013-01-28 | A method for producing a ferroelectric thin film, and a liquid for electrostatic spraying |
CN201310068790.2A CN103360064B (zh) | 2012-03-29 | 2013-03-05 | 铁电薄膜的制造方法和静电喷涂用液 |
US13/828,698 US9017770B2 (en) | 2012-03-29 | 2013-03-14 | Method of manufacturing ferroelectric thin film |
EP20130160993 EP2645438B1 (en) | 2012-03-29 | 2013-03-26 | Method of manufacturing ferroelectric thin film and an electrostatic spray solution |
US14/537,150 US20150064359A1 (en) | 2012-03-29 | 2014-11-10 | Method of manufacturing ferroelectric thin film |
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JP2012075448A JP5803775B2 (ja) | 2012-03-29 | 2012-03-29 | 強誘電体薄膜の製造方法 |
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DE112016001908B4 (de) * | 2015-11-20 | 2022-12-29 | AGC Inc. | Gekrümmtes Substrat mit Film, Verfahren zu dessen Herstellung und Bildanzeigevorrichtung |
CN107903057B (zh) * | 2017-11-24 | 2021-02-05 | 东北大学 | 氧传感器用电解质层和致密扩散层双层结构的制备方法 |
CN108247814B (zh) * | 2018-01-08 | 2021-03-02 | 广东新秀新材料股份有限公司 | 陶瓷后盖的制作方法及陶瓷后盖的制作模组 |
JP7209952B2 (ja) * | 2018-07-05 | 2023-01-23 | 一般財団法人ファインセラミックスセンター | 強誘電体ナノ粒子集積方法及び電子部品の製造方法 |
TWI717651B (zh) * | 2018-11-06 | 2021-02-01 | 馗鼎奈米科技股份有限公司 | 壓電材料薄膜之製造方法與設備 |
CN111239203B (zh) * | 2018-11-29 | 2022-05-17 | 中国科学院大连化学物理研究所 | 一种氧化铜薄膜的制备方法 |
CN111013844B (zh) * | 2019-12-17 | 2021-07-30 | 佛山鹏程易胜机械有限公司 | 一种超声波静电喷涂生产线 |
CN112152510B (zh) * | 2020-09-25 | 2021-08-03 | 大连理工大学 | 一种以液滴为载体的热电荷动力循环系统 |
CN113275173A (zh) * | 2021-05-16 | 2021-08-20 | 西北工业大学 | 静电喷涂装置及采用该静电喷涂装置制备大面积薄膜的方法 |
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WO1998002378A1 (fr) * | 1996-07-17 | 1998-01-22 | Citizen Watch Co., Ltd. | Element ferroelectrique et son procede de production |
JPH1171103A (ja) * | 1997-06-27 | 1999-03-16 | Kasei Optonix Co Ltd | 複合金属酸化物の前駆体および複合金属酸化物の製造方法 |
JP2001286814A (ja) * | 2000-04-05 | 2001-10-16 | Horiba Ltd | 粒子膜形成方法 |
KR100513724B1 (ko) * | 2002-12-24 | 2005-09-08 | 삼성전자주식회사 | 강유전성 박막 및 그 제조방법 |
JP4664054B2 (ja) * | 2004-12-09 | 2011-04-06 | 富士フイルム株式会社 | 成膜装置 |
CN100369864C (zh) * | 2006-05-23 | 2008-02-20 | 湖北大学 | BNdT铁电薄膜择优取向生长的制备方法 |
KR101075422B1 (ko) * | 2008-10-14 | 2011-10-24 | 한국과학기술연구원 | 금속 산화물 박막 구조체를 제조하는 방법 및 이에 의해 제조된 금속 산화물 박막 구조체를 포함하는 고체산화물 연료전지 |
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CN103360064A (zh) | 2013-10-23 |
US9017770B2 (en) | 2015-04-28 |
EP2645438A1 (en) | 2013-10-02 |
TW201343990A (zh) | 2013-11-01 |
US20130260482A1 (en) | 2013-10-03 |
EP2645438B1 (en) | 2015-03-04 |
JP2013203611A (ja) | 2013-10-07 |
US20150064359A1 (en) | 2015-03-05 |
CN103360064B (zh) | 2016-03-16 |
TWI545235B (zh) | 2016-08-11 |
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