JP5800539B2 - エッチング剤溶液中のケイ素濃度の分析 - Google Patents

エッチング剤溶液中のケイ素濃度の分析 Download PDF

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JP5800539B2
JP5800539B2 JP2011063978A JP2011063978A JP5800539B2 JP 5800539 B2 JP5800539 B2 JP 5800539B2 JP 2011063978 A JP2011063978 A JP 2011063978A JP 2011063978 A JP2011063978 A JP 2011063978A JP 5800539 B2 JP5800539 B2 JP 5800539B2
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test solution
solution
fluoride
concentration
predetermined
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JP2011203252A (ja
JP2011203252A5 (enExample
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ユージン・シャーリット
ユリア・チュチナ
ピーター・ブラティン
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ECI Technology Inc
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ECI Technology Inc
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416Systems
    • G01N27/4166Systems measuring a particular property of an electrolyte
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00Chemistry: analytical and immunological testing
    • Y10T436/19Halogen containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00Chemistry: analytical and immunological testing
    • Y10T436/19Halogen containing
    • Y10T436/193333In aqueous solution

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Weting (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2011063978A 2010-03-25 2011-03-23 エッチング剤溶液中のケイ素濃度の分析 Active JP5800539B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/661,968 US8008087B1 (en) 2010-03-25 2010-03-25 Analysis of silicon concentration in phosphoric acid etchant solutions
US12/661,968 2010-03-25

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JP2015165808A Division JP6189380B2 (ja) 2010-03-25 2015-08-25 エッチング剤溶液中のケイ素濃度の分析

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JP2011203252A JP2011203252A (ja) 2011-10-13
JP2011203252A5 JP2011203252A5 (enExample) 2014-04-17
JP5800539B2 true JP5800539B2 (ja) 2015-10-28

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JP2011063978A Active JP5800539B2 (ja) 2010-03-25 2011-03-23 エッチング剤溶液中のケイ素濃度の分析
JP2015165808A Active JP6189380B2 (ja) 2010-03-25 2015-08-25 エッチング剤溶液中のケイ素濃度の分析

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JP (2) JP5800539B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5795983B2 (ja) * 2012-03-27 2015-10-14 株式会社Screenホールディングス 基板処理装置
US9274079B2 (en) * 2013-01-22 2016-03-01 Eci Technology, Inc. Etchant product analysis in alkaline etchant solutions
TWI630652B (zh) * 2014-03-17 2018-07-21 SCREEN Holdings Co., Ltd. 基板處理裝置及使用基板處理裝置之基板處理方法
US20160018358A1 (en) * 2014-07-18 2016-01-21 Eci Technology, Inc. Analysis of silicon concentration in phosphoric acid etchant solutions
KR101671118B1 (ko) 2014-07-29 2016-10-31 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
JP6668257B2 (ja) * 2014-12-26 2020-03-18 倉敷紡績株式会社 珪素濃度又はエッチング選択比の測定方法及び測定装置
KR102511986B1 (ko) 2015-09-02 2023-03-21 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
JP6909620B2 (ja) * 2017-04-20 2021-07-28 株式会社Screenホールディングス 基板処理方法
EP3671197B1 (en) * 2018-03-06 2024-10-16 Hitachi High-Tech Corporation Ion concentration measurement device
JP6767442B2 (ja) * 2018-08-24 2020-10-14 株式会社東芝 測定器、エッチングシステム、シリコン濃度測定方法、及びシリコン濃度測定プログラム
US11555798B2 (en) * 2018-10-08 2023-01-17 Eci Technology, Inc. Selective monitoring of multiple silicon compounds
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
CN114746744A (zh) 2019-12-02 2022-07-12 株式会社堀场先进技术 荧光x射线分析装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890758B2 (en) * 2003-06-13 2005-05-10 Eci Technology, Inc. Measurement of complexing agent concentration in an electroless plating bath
JP4809122B2 (ja) * 2005-05-17 2011-11-09 アプリシアテクノロジー株式会社 燐酸溶液中の珪素濃度測定装置及び測定方法
US20090229995A1 (en) * 2008-03-14 2009-09-17 Eci Technology, Inc. Analysis of fluoride at low concentrations in acidic processing solutions

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JP2011203252A (ja) 2011-10-13
US8008087B1 (en) 2011-08-30
JP2016006434A (ja) 2016-01-14
JP6189380B2 (ja) 2017-08-30

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