JP5797907B2 - 発光ダイオード素子 - Google Patents
発光ダイオード素子 Download PDFInfo
- Publication number
- JP5797907B2 JP5797907B2 JP2011024259A JP2011024259A JP5797907B2 JP 5797907 B2 JP5797907 B2 JP 5797907B2 JP 2011024259 A JP2011024259 A JP 2011024259A JP 2011024259 A JP2011024259 A JP 2011024259A JP 5797907 B2 JP5797907 B2 JP 5797907B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting diode
- light emitting
- fluorescent
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Description
10 LED素子、
11 マウントリード、
12 インナーリード、
14 LEDチップ、
15 ワイヤー、
16 蛍光層、
17 モールド部、
20、40 反射カップ、
22 蛍光物質、
24 透明材料、
40a 拡散反射面、
40b 鏡面、
46 透光性物質。
Claims (5)
- 光を放出する発光ダイオードチップと、
前記発光ダイオードチップが、長さ(図7の符号a+2b)が400〜600μmの底面に配置され、傾斜角(図7の符号θ)が45〜60°の傾斜面を有し、この際、前記傾斜面及び底面が前記発光ダイオードチップを取り囲み、実質的にすべての底面及び傾斜面から光を拡散的に反射する、高さ(図7の符号h)が1.0〜2.5mmの反射カップと、
前記反射カップ内に存在し、前記発光ダイオードチップから放出される光を可視光に転換する光転換物質と、
を備え、
前記光転換物質は、前記発光ダイオードチップから放出される光により励起されて可視光を放出する蛍光物質であり、
前記蛍光物質は、前記発光ダイオードチップから離れて前記反射カップの上部に蛍光層として形成されており、
前記蛍光層は、前記発光ダイオードチップの最大長以上の垂直距離で前記発光ダイオードチップから離れており、
さらに、前記反射カップの表面に、半球状の凸部を有し、前記凸部の底面が前記蛍光層の上面と同サイズを有して前記蛍光層に接することを特徴とする発光ダイオード素子。 - 前記拡散反射面の表面は、粗く加工されていることを特徴とする請求項1に記載の発光ダイオード素子。
- 前記蛍光物質は、複数の可視光を形成する複数の蛍光物質であり、
前記複数の蛍光物質は、互いに混合されていることを特徴とする請求項1または2に記載の発光ダイオード素子。 - 前記蛍光物質は、複数の可視光を形成する複数の蛍光物質であり、
前記複数の蛍光物質は、複数の層に積層されていることを特徴とする請求項1または2に記載の発光ダイオード素子。 - 前記発光ダイオードチップは、III−V族窒化物系の半導体化合物から形成されていることを特徴とする請求項1〜4のいずれか1項に記載の発光ダイオード素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64849405P | 2005-01-31 | 2005-01-31 | |
US60/648,494 | 2005-01-31 | ||
KR10-2005-0040164 | 2005-05-13 | ||
KR1020050040164A KR101139891B1 (ko) | 2005-01-31 | 2005-05-13 | 확산 반사면을 구비한 발광 다이오드 소자 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006023877A Division JP2006216953A (ja) | 2005-01-31 | 2006-01-31 | 発光ダイオード素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011091454A JP2011091454A (ja) | 2011-05-06 |
JP5797907B2 true JP5797907B2 (ja) | 2015-10-21 |
Family
ID=37176626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011024259A Expired - Fee Related JP5797907B2 (ja) | 2005-01-31 | 2011-02-07 | 発光ダイオード素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7816855B2 (ja) |
JP (1) | JP5797907B2 (ja) |
KR (1) | KR101139891B1 (ja) |
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US7837348B2 (en) * | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
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US7703942B2 (en) * | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
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KR20080065451A (ko) * | 2007-01-09 | 2008-07-14 | 삼성전기주식회사 | Led 패키지 |
KR100826396B1 (ko) * | 2007-01-18 | 2008-05-02 | 삼성전기주식회사 | Led 칩 패키지 |
KR101347163B1 (ko) * | 2007-05-21 | 2014-01-03 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR101283282B1 (ko) | 2007-07-25 | 2013-07-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
KR101365621B1 (ko) * | 2007-09-04 | 2014-02-24 | 서울반도체 주식회사 | 열 방출 슬러그들을 갖는 발광 다이오드 패키지 |
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US8021008B2 (en) * | 2008-05-27 | 2011-09-20 | Abl Ip Holding Llc | Solid state lighting using quantum dots in a liquid |
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-
2005
- 2005-05-13 KR KR1020050040164A patent/KR101139891B1/ko active IP Right Grant
- 2005-12-28 US US11/318,557 patent/US7816855B2/en not_active Expired - Fee Related
-
2011
- 2011-02-07 JP JP2011024259A patent/JP5797907B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20060087985A (ko) | 2006-08-03 |
US7816855B2 (en) | 2010-10-19 |
KR101139891B1 (ko) | 2012-04-27 |
JP2011091454A (ja) | 2011-05-06 |
US20060170335A1 (en) | 2006-08-03 |
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