JP5794742B2 - ギャップ停止部を有した微小電気機械システム（ｍｅｍｓ）およびそのための方法 - Google Patents

ギャップ停止部を有した微小電気機械システム（ｍｅｍｓ）およびそのための方法 Download PDF

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Publication number
JP5794742B2
JP5794742B2 JP2012543137A JP2012543137A JP5794742B2 JP 5794742 B2 JP5794742 B2 JP 5794742B2 JP 2012543137 A JP2012543137 A JP 2012543137A JP 2012543137 A JP2012543137 A JP 2012543137A JP 5794742 B2 JP5794742 B2 JP 5794742B2
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forming
layer
conductive material
contact
germanium
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Expired - Fee Related
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JP2012543137A
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English (en)
Japanese (ja)
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JP2013512792A (ja
JP2013512792A5 (enExample
Inventor
テ パク、ウ
テ パク、ウ
エイチ． カーリン、リサ
エイチ． カーリン、リサ
リウ、リエンジュイン
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/035—Soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
JP2012543137A 2009-12-08 2010-11-22 ギャップ停止部を有した微小電気機械システム（ｍｅｍｓ）およびそのための方法 Expired - Fee Related JP5794742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/632,940 US8119431B2 (en) 2009-12-08 2009-12-08 Method of forming a micro-electromechanical system (MEMS) having a gap stop
US12/632,940 2009-12-08
PCT/US2010/057618 WO2011071685A2 (en) 2009-12-08 2010-11-22 Micro electromechanical systems (mems) having a gap stop and method therefor

Publications (3)

Publication Number Publication Date
JP2013512792A JP2013512792A (ja) 2013-04-18
JP2013512792A5 JP2013512792A5 (enExample) 2014-01-16
JP5794742B2 true JP5794742B2 (ja) 2015-10-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012543137A Expired - Fee Related JP5794742B2 (ja) 2009-12-08 2010-11-22 ギャップ停止部を有した微小電気機械システム（ｍｅｍｓ）およびそのための方法

Country Status (4)

Country Link
US (1) US8119431B2 (enExample)
JP (1) JP5794742B2 (enExample)
CN (1) CN102762490B (enExample)
WO (1) WO2011071685A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058143B2 (en) * 2009-01-21 2011-11-15 Freescale Semiconductor, Inc. Substrate bonding with metal germanium silicon material
US8461656B2 (en) * 2010-06-30 2013-06-11 Freescale Semiconductor, Inc. Device structures for in-plane and out-of-plane sensing micro-electro-mechanical systems (MEMS)
US8652865B2 (en) * 2011-08-16 2014-02-18 Freescale Semiconductor, Inc. Attaching a MEMS to a bonding wafer
US8633088B2 (en) 2012-04-30 2014-01-21 Freescale Semiconductor, Inc. Glass frit wafer bond protective structure
CN104241147A (zh) * 2013-06-14 2014-12-24 无锡华润上华半导体有限公司 一种基于铝锗共晶的低温键合方法
CN106373900A (zh) * 2015-07-20 2017-02-01 中芯国际集成电路制造(北京)有限公司 晶圆级键合封装方法以及共晶键合的晶圆结构
CN109422234B (zh) * 2017-09-01 2021-04-09 中芯国际集成电路制造(上海)有限公司 测试结构及其制造方法
CN107902626A (zh) * 2017-11-15 2018-04-13 上海华虹宏力半导体制造有限公司 共晶键合的方法及半导体器件的制造方法
US20190202684A1 (en) 2017-12-29 2019-07-04 Texas Instruments Incorporated Protective bondline control structure
WO2021134688A1 (zh) * 2019-12-31 2021-07-08 瑞声声学科技(深圳)有限公司 一种制作mems驱动器的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3613838B2 (ja) 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
US6346742B1 (en) 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
EP1219565A1 (en) * 2000-12-29 2002-07-03 STMicroelectronics S.r.l. Process for manufacturing integrated devices having connections on separate wafers and stacking the same
US6617524B2 (en) 2001-12-11 2003-09-09 Motorola, Inc. Packaged integrated circuit and method therefor
US7138293B2 (en) 2002-10-04 2006-11-21 Dalsa Semiconductor Inc. Wafer level packaging technique for microdevices
US7037805B2 (en) * 2003-05-07 2006-05-02 Honeywell International Inc. Methods and apparatus for attaching a die to a substrate
US7098070B2 (en) * 2004-11-16 2006-08-29 International Business Machines Corporation Device and method for fabricating double-sided SOI wafer scale package with through via connections
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US7538401B2 (en) * 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7303976B2 (en) * 2005-05-10 2007-12-04 Hewlett-Packard Development Company, L.P. Wafer bonding method
US7569926B2 (en) * 2005-08-26 2009-08-04 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
EP1945561B1 (en) * 2005-10-14 2018-10-24 STMicroelectronics Srl Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device
DE102006011545B4 (de) * 2006-03-14 2016-03-17 Robert Bosch Gmbh Mikromechanisches Kombi-Bauelement und entsprechendes Herstellungsverfahren
JP2010036280A (ja) * 2008-08-01 2010-02-18 Fuji Electric Holdings Co Ltd Ｍｅｍｓ構造体の製造方法
JP5237733B2 (ja) * 2008-09-22 2013-07-17 アルプス電気株式会社 Ｍｅｍｓセンサ
US7846815B2 (en) * 2009-03-30 2010-12-07 Freescale Semiconductor, Inc. Eutectic flow containment in a semiconductor fabrication process

Also Published As

Publication number Publication date
WO2011071685A3 (en) 2011-09-09
WO2011071685A2 (en) 2011-06-16
US20110133294A1 (en) 2011-06-09
JP2013512792A (ja) 2013-04-18
CN102762490B (zh) 2015-09-23
US8119431B2 (en) 2012-02-21
CN102762490A (zh) 2012-10-31

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