CN102762490B - 具有间隙挡块的微机电系统(mems)及其制造方法 - Google Patents

具有间隙挡块的微机电系统(mems)及其制造方法 Download PDF

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Publication number
CN102762490B
CN102762490B CN201080055688.3A CN201080055688A CN102762490B CN 102762490 B CN102762490 B CN 102762490B CN 201080055688 A CN201080055688 A CN 201080055688A CN 102762490 B CN102762490 B CN 102762490B
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China
Prior art keywords
conductive material
semiconductor layer
mems
patterning
contact
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Expired - Fee Related
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CN201080055688.3A
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English (en)
Chinese (zh)
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CN102762490A (zh
Inventor
朴宇泰
利萨·H·卡林
刘连军
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/035—Soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
CN201080055688.3A 2009-12-08 2010-11-22 具有间隙挡块的微机电系统(mems)及其制造方法 Expired - Fee Related CN102762490B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/632,940 US8119431B2 (en) 2009-12-08 2009-12-08 Method of forming a micro-electromechanical system (MEMS) having a gap stop
US12/632,940 2009-12-08
PCT/US2010/057618 WO2011071685A2 (en) 2009-12-08 2010-11-22 Micro electromechanical systems (mems) having a gap stop and method therefor

Publications (2)

Publication Number Publication Date
CN102762490A CN102762490A (zh) 2012-10-31
CN102762490B true CN102762490B (zh) 2015-09-23

Family

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Family Applications (1)

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CN201080055688.3A Expired - Fee Related CN102762490B (zh) 2009-12-08 2010-11-22 具有间隙挡块的微机电系统(mems)及其制造方法

Country Status (4)

Country Link
US (1) US8119431B2 (enExample)
JP (1) JP5794742B2 (enExample)
CN (1) CN102762490B (enExample)
WO (1) WO2011071685A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058143B2 (en) * 2009-01-21 2011-11-15 Freescale Semiconductor, Inc. Substrate bonding with metal germanium silicon material
US8461656B2 (en) * 2010-06-30 2013-06-11 Freescale Semiconductor, Inc. Device structures for in-plane and out-of-plane sensing micro-electro-mechanical systems (MEMS)
US8652865B2 (en) * 2011-08-16 2014-02-18 Freescale Semiconductor, Inc. Attaching a MEMS to a bonding wafer
US8633088B2 (en) 2012-04-30 2014-01-21 Freescale Semiconductor, Inc. Glass frit wafer bond protective structure
CN104241147A (zh) * 2013-06-14 2014-12-24 无锡华润上华半导体有限公司 一种基于铝锗共晶的低温键合方法
CN106373900A (zh) * 2015-07-20 2017-02-01 中芯国际集成电路制造(北京)有限公司 晶圆级键合封装方法以及共晶键合的晶圆结构
CN109422234B (zh) * 2017-09-01 2021-04-09 中芯国际集成电路制造(上海)有限公司 测试结构及其制造方法
CN107902626A (zh) * 2017-11-15 2018-04-13 上海华虹宏力半导体制造有限公司 共晶键合的方法及半导体器件的制造方法
US20190202684A1 (en) * 2017-12-29 2019-07-04 Texas Instruments Incorporated Protective bondline control structure
WO2021134688A1 (zh) * 2019-12-31 2021-07-08 瑞声声学科技(深圳)有限公司 一种制作mems驱动器的方法
CN115571852A (zh) * 2022-09-20 2023-01-06 北京晨晶电子有限公司 一种微机械工艺中控制间隙的装配方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
US6346742B1 (en) * 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
EP1720204A1 (en) * 2005-05-03 2006-11-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US20070048898A1 (en) * 2005-08-26 2007-03-01 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
JP2007259439A (ja) * 2006-03-14 2007-10-04 Robert Bosch Gmbh マイクロマシニング型のコンビ構成素子ならびに該コンビ構成素子のための製造方法
CN101331080A (zh) * 2005-10-14 2008-12-24 意法半导体股份有限公司 用于集成器件的衬底级组件、其制造工艺及相关集成器件

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JP3613838B2 (ja) 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
EP1219565A1 (en) * 2000-12-29 2002-07-03 STMicroelectronics S.r.l. Process for manufacturing integrated devices having connections on separate wafers and stacking the same
US6617524B2 (en) 2001-12-11 2003-09-09 Motorola, Inc. Packaged integrated circuit and method therefor
US7138293B2 (en) 2002-10-04 2006-11-21 Dalsa Semiconductor Inc. Wafer level packaging technique for microdevices
US7037805B2 (en) * 2003-05-07 2006-05-02 Honeywell International Inc. Methods and apparatus for attaching a die to a substrate
US7098070B2 (en) * 2004-11-16 2006-08-29 International Business Machines Corporation Device and method for fabricating double-sided SOI wafer scale package with through via connections
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7538401B2 (en) * 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7303976B2 (en) * 2005-05-10 2007-12-04 Hewlett-Packard Development Company, L.P. Wafer bonding method
JP2010036280A (ja) * 2008-08-01 2010-02-18 Fuji Electric Holdings Co Ltd Ｍｅｍｓ構造体の製造方法
JP5237733B2 (ja) * 2008-09-22 2013-07-17 アルプス電気株式会社 Ｍｅｍｓセンサ
US7846815B2 (en) * 2009-03-30 2010-12-07 Freescale Semiconductor, Inc. Eutectic flow containment in a semiconductor fabrication process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346742B1 (en) * 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
EP1720204A1 (en) * 2005-05-03 2006-11-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US20070048898A1 (en) * 2005-08-26 2007-03-01 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
CN101331080A (zh) * 2005-10-14 2008-12-24 意法半导体股份有限公司 用于集成器件的衬底级组件、其制造工艺及相关集成器件
JP2007259439A (ja) * 2006-03-14 2007-10-04 Robert Bosch Gmbh マイクロマシニング型のコンビ構成素子ならびに該コンビ構成素子のための製造方法

Also Published As

Publication number Publication date
JP5794742B2 (ja) 2015-10-14
WO2011071685A2 (en) 2011-06-16
JP2013512792A (ja) 2013-04-18
US8119431B2 (en) 2012-02-21
WO2011071685A3 (en) 2011-09-09
US20110133294A1 (en) 2011-06-09
CN102762490A (zh) 2012-10-31

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