JP5784130B2 - ライン・カードのための光電子アセンブリ - Google Patents
ライン・カードのための光電子アセンブリ Download PDFInfo
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- JP5784130B2 JP5784130B2 JP2013532839A JP2013532839A JP5784130B2 JP 5784130 B2 JP5784130 B2 JP 5784130B2 JP 2013532839 A JP2013532839 A JP 2013532839A JP 2013532839 A JP2013532839 A JP 2013532839A JP 5784130 B2 JP5784130 B2 JP 5784130B2
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- 230000005693 optoelectronics Effects 0.000 title description 10
- 230000003287 optical effect Effects 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
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- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Description
本出願は、参照によりその全体が本明細書に組み込まれている2010年10月7日に出願された米国仮特許出願第61/390,837号により優先権を主張するものである。
Claims (5)
- 平坦な表面を有する支持構造体と、
前記平坦な表面からオフセット距離の位置にあり第1の光デバイスを有する第1の平坦な基板であって、前記第1の光デバイスが、前記第1の平坦な基板の第1のエッジに沿って第1の光ポートのアレイを有する、第1の平坦な基板と、
前記平坦な表面からオフセット距離の位置にあり1つまたは複数の第2の光デバイスを有する第2の平坦な基板であって、前記1つまたは複数の第2の光デバイスが、前記第2の平坦な基板の第2のエッジに沿って第2の光ポートを有し、前記第2の光ポート及び前記第1の光ポートのアレイを光学的に結合するために、前記第2のエッジは前記第1のエッジに面している、第2の平坦な基板と、
前記第1の平坦な基板に熱的に結合された第1のヒータと、
前記第2の平坦な基板に熱的に結合された第2のヒータと、
を備え、
前記第1の平坦な基板が、前記第2の平坦な基板とは実質的に異なる熱膨張率を有し、
前記第1のヒータと前記第2のヒータが、別個に制御可能であるように構成されている、装置。 - 前記第1の平坦な基板が平坦なベースを含み、前記第1の光デバイスが前記平坦なベースに隣接する位置にあり、前記平坦なベースが前記第2の平坦な基板の組成と異なる組成を有し、
前記1つまたは複数の第2の光デバイスが、前記支持構造体の前記平坦な表面に位置するデバイスと光学的に結合されている、
請求項1に記載の装置。 - 前記平坦な表面に実装された複数の光検出器と、
前記平坦な表面に実装され、受け取った光に応答して前記光検出器によって生成される電気信号を受け取るように電気的に接続されている複数の増幅器であって、前記1つまたは複数の第2の光デバイスが、前記第1の光ポートのアレイからの光を前記複数の光検出器に向けるように構成されている、複数の増幅器と、
前記平坦な表面に取り付けられ、前記光検出器が実装されているサブマウントと、
をさらに備える、請求項1に記載の装置。 - 前記サブマウントが、
前記平坦な表面に取り付けられた第1の層と、
前記第1の層の上に形成され、前記光検出器が直接的に取り付けられている第2の層と、
を備え、
前記第1の層がシリコンで構成され、
前記第2の層がシリコン酸化物またはシリコン窒化物で構成され、少なくとも約10μmの厚さを有し、
前記サブマウントが、前記第2の層の上に形成され導電性材料で作られた第3の層をさらに備え、
前記第3の層が、前記光検出器から前記増幅器に前記電気信号を伝送する電気リードを形成するようにパターニングされている、
請求項3に記載の装置。 - 支持板と、
前記支持板に実装されている複数の光検出器と、
前記支持板に実装され、受け取った光に応答して前記光検出器によって生成された電気信号を受け取るように電気的に接続されている複数の増幅器と、
前記支持板に実装されている光サブアセンブリと、
を備え、
前記光検出器が、前記光サブアセンブリと前記支持板との間に位置決めされ、
前記光サブアセンブリが、光を前記光検出器に向けるように構成され、
前記光サブアセンブリが、
第1の平坦な基板に配置され、光信号を複数のスペクトル成分に逆多重化するように構成された光デマルチプレクサと、
第2の平坦な基板に配置され、前記光デマルチプレクサから前記スペクトル成分を受け取り、前記スペクトル成分を対応する光検出器に向けるように構成されている1つまたは複数のミラーと、
温度制御ユニットと、
を備え、
前記光デマルチプレクサと前記1つまたは複数のミラーが共に、前記温度制御ユニットに横並びの配列で取り付けられ、
前記温度制御ユニットが、前記光デマルチプレクサとミラーのアレイとのいずれよりも前記支持板から大きなオフセット距離に位置決めされ、
前記温度制御ユニットが、前記光デマルチプレクサと前記1つまたは複数のミラーとの温度を個別に制御するように構成された2つ以上の抵抗性ヒータを備え、
前記光デマルチプレクサが、前記1つまたは複数のミラーよりも前記支持板から大きなオフセット距離に位置決めされ、
前記第1の平坦な基板は、前記第2の平坦な基板とは実質的に異なる熱膨張率を有している、装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39083710P | 2010-10-07 | 2010-10-07 | |
US61/390,837 | 2010-10-07 | ||
US12/944,875 | 2010-11-12 | ||
US12/944,875 US8787775B2 (en) | 2010-10-07 | 2010-11-12 | Opto-electronic assembly for a line card |
PCT/US2011/053812 WO2012047701A2 (en) | 2010-10-07 | 2011-09-29 | Opto-electronic assembly for a line card |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013541047A JP2013541047A (ja) | 2013-11-07 |
JP2013541047A5 JP2013541047A5 (ja) | 2013-12-19 |
JP5784130B2 true JP5784130B2 (ja) | 2015-09-24 |
Family
ID=45928333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013532839A Expired - Fee Related JP5784130B2 (ja) | 2010-10-07 | 2011-09-29 | ライン・カードのための光電子アセンブリ |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2625558B1 (ja) |
JP (1) | JP5784130B2 (ja) |
KR (1) | KR101515732B1 (ja) |
CN (1) | CN103154798B (ja) |
TW (1) | TW201229589A (ja) |
WO (1) | WO2012047701A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9893816B2 (en) * | 2016-03-25 | 2018-02-13 | Intel Corporation | Dynamic beam steering optoelectronic packages |
CN107843955B (zh) * | 2017-09-20 | 2019-12-20 | 博创科技股份有限公司 | 一种加热型阵列波导光栅(awg)模块 |
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US5212745A (en) * | 1991-12-02 | 1993-05-18 | Micron Optics, Inc. | Fixed and temperature tuned fiber fabry-perot filters |
KR19990014882A (ko) * | 1996-03-18 | 1999-02-25 | 요트.게.아.롤페즈 | 플라즈마 어드레스된 칼라 디스플레이 |
JP3448551B2 (ja) * | 2000-06-14 | 2003-09-22 | 古河電気工業株式会社 | アレイ導波路型回折格子 |
US20020037025A1 (en) * | 2000-09-25 | 2002-03-28 | Bartman Randall K. | Hybrid narrow -linewidth semiconductor lasers |
JP3768099B2 (ja) * | 2000-12-19 | 2006-04-19 | 三洋電機株式会社 | 受光素子及びそれを備える光半導体装置 |
JP4665240B2 (ja) * | 2001-06-25 | 2011-04-06 | 富士通株式会社 | 光伝送装置 |
US7116851B2 (en) * | 2001-10-09 | 2006-10-03 | Infinera Corporation | Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance |
KR100442609B1 (ko) * | 2002-03-05 | 2004-08-02 | 삼성전자주식회사 | 플립칩 본딩구조 및 본딩방법 |
US6842572B2 (en) * | 2002-05-15 | 2005-01-11 | Intel Corporation | Techniques to guide optical signals |
JP3947460B2 (ja) * | 2002-12-03 | 2007-07-18 | ローム株式会社 | 光モジュール |
JP4336759B2 (ja) * | 2002-12-17 | 2009-09-30 | 日本電気株式会社 | 光分散フィルタ |
US7376310B2 (en) * | 2002-12-20 | 2008-05-20 | International Business Machines Corporation | Optical waveguide element with controlled birefringence |
US6945708B2 (en) * | 2003-02-18 | 2005-09-20 | Jds Uniphase Corporation | Planar lightwave circuit package |
JP2005064109A (ja) * | 2003-08-08 | 2005-03-10 | Noritsu Koki Co Ltd | レーザ光源及びレーザ露光装置 |
JP2005167348A (ja) | 2003-11-28 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 光受信装置、光送受信装置及び光モジュール |
EP1740992B1 (en) * | 2004-04-15 | 2018-10-10 | Infinera Corporation | Coolerless and floating wavelength grid photonic integrated circuits (pics) for wdm transmission networks |
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JP2009092690A (ja) * | 2007-10-03 | 2009-04-30 | Fuji Xerox Co Ltd | 光モジュール |
US8265111B2 (en) * | 2008-03-18 | 2012-09-11 | Mitsubishi Electric Corporation | Laser light source module |
KR101018278B1 (ko) * | 2008-09-19 | 2011-03-04 | 전자부품연구원 | 파장가변 소자 패키지 |
-
2011
- 2011-09-29 KR KR1020137008704A patent/KR101515732B1/ko active IP Right Grant
- 2011-09-29 JP JP2013532839A patent/JP5784130B2/ja not_active Expired - Fee Related
- 2011-09-29 WO PCT/US2011/053812 patent/WO2012047701A2/en active Application Filing
- 2011-09-29 CN CN201180048250.7A patent/CN103154798B/zh active Active
- 2011-09-29 EP EP11831336.0A patent/EP2625558B1/en active Active
- 2011-10-03 TW TW100135787A patent/TW201229589A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201229589A (en) | 2012-07-16 |
EP2625558A4 (en) | 2017-11-22 |
CN103154798A (zh) | 2013-06-12 |
KR101515732B1 (ko) | 2015-04-27 |
EP2625558A2 (en) | 2013-08-14 |
JP2013541047A (ja) | 2013-11-07 |
KR20130052015A (ko) | 2013-05-21 |
EP2625558B1 (en) | 2021-06-23 |
CN103154798B (zh) | 2015-12-16 |
WO2012047701A2 (en) | 2012-04-12 |
WO2012047701A3 (en) | 2012-08-16 |
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