JP5775179B2 - 転位ベンディング構造を有する発光デバイス - Google Patents
転位ベンディング構造を有する発光デバイス Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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Description
本願は、2011年2月11日に提出された“Light Emitting Diodes with Dislocation Bending Structure(転位ベンディング構造を有する発光ダイオード”と題する同時係属米国仮出願第61/441,674号の利益を主張し、それは、参照によってここに組み込まれる。
Claims (21)
- 基板、
アルミニウム及びガリウムを含むIII族窒化物材料で構成されるn型層、
前記n型層の第1の側に配置され、III族窒化物材料を含み、電磁放射をするように構成れた活性領域、及び
前記基板と前記n型領域との間に配置される転位ベンディング構造を含み、
前記転位ベンディング構造は、少なくとも40対の互いに隣接する層を備え、各対の互いに隣接する層は、アルミニクム及びガリウムを含むIII族窒化物材料で構成される第1の層、及びアルミニクム及びガリウムを含むIII族窒化物材料で構成される第2の層を含み、
前記第1の層と前記第2の層とは前記アルミニウムのモル分率が少なくとも5%異なり、
少なくとも1対の互いに隣接する前記第1の層又は前記第2の層の少なくとも一方は、III族窒化物材料におけるアルミニウムのモル分率が異なる短周期超格子を備える、発光デバイス。 - 前記転位ベンディング構造中の各対の互いに隣接する層は、全体の厚さが10ナノメートルから1ミクロンの間にある、請求項1に記載の発光デバイス。
- 異なる対の互いに隣接する層に対する全厚は、50%の範囲で変化する、請求項2に記載の発光デバイス。
- 前記基板と前記転位ベンディング構造との間に配置される中間層をさらに備える、請求項1に記載の発光デバイス。
- 前記中間層は、核形成層を備える、請求項4に記載の発光デバイス。
- 前記基板はサファイア基板であり、前記n型層はn型クラッド層である、請求項1に記載の発光デバイス。
- 前記1対の互いに隣接する前記第1の層又は前記第2の層の少なくとも一方は、傾斜組成又は傾斜ドーピングの少なくとも一方を備える、請求項1に記載の発光デバイス。
- 前記第1の層と前記第2の層との界面は、前記第1の層及び前記第2の層の双方と異なるエネルギーレベルを有する中間段階の領域を含む、請求項1に記載の発光デバイス。
- 前記第1の層と前記第2の層との界面は、エネルギーレベルが除々に変化する傾斜界面を含む、請求項1に記載の発光デバイス。
- 前記活性領域は、一組(一セット)のバリアが組み込まれた一組(一セット)の量子井戸を含み、且つ前記一組(一セット)のバリアの少なくとも一つは、III族元素の傾斜モル分率を有する、請求項1に記載の発光デバイス。
- 基板、
アルミニウム及びガリウムを含むIII族窒化物材料で構成されるn型層、
前記n型層の第1の側に配置され、III族窒化物材料を含み、電磁放射をするように構成れた活性領域、及び
アルミニウム及びガリウムを含むIII族窒化物材料で構成され、前記基板と前記n型領域との間に配置される転位ベンディング構造を含み、
前記転位ベンディング構造は、前記基板から伝播する少なくとも一部の転位を、前記n型領域に達する前に、曲げ又は消滅させる手段を備え、
前記曲げ又は消滅させる手段は複数の層を含み、前記複数の層は、アルミニクム及びガリウムを含むIII族窒化物材料で構成される第1の層、及びアルミニクム及びガリウムを含むIII族窒化物材料で構成される第2の層を含み、
前記第1の層と前記第2の層とは前記アルミニウムのモル分率が少なくとも5%異なり、
前記第1の層と前記第2の層との間には、前記第1の層及び前記第2の層の双方と異なるエネルギーレベルを有する中間段階の領域を含む、発光デバイス。 - 前記手段は、十分に大きなストレインを生成して前記少なくとも幾つかの転位の曲げを誘発する、請求項11に記載の発光デバイス。
- 前記基板はサファイア基板であり、前記n型層はn型クラッド層である、請求項11に記載の発光デバイス。
- 前記モル分率の差は、ストレインの目的量に基づいて選択される、請求項11に記載の発光デバイス。
- 前記モル分率の差は、前記第1の層又は前記第2の層の少なくとも一方の厚みに基づいて選択される、請求項11に記載の発光デバイス。
- 前記複数の層は、少なくとも40周期を含み、各周期は、前記複数の層の内の少なくとも二つの層を含む、請求項11に記載の発光デバイス。
- サファイア基板の第1の側に転位ベンディング構造を形成し、前記転位ベンディング構造は、少なくとも40対の互いに隣接する層を備え、各対の互いに隣接する層は、アルミニクム及びガリウムを含むIII族窒化物材料で構成される第1の層、及びアルミニクム及びガリウムを含むIII族窒化物材料で構成される第2の層を含み、前記第1の層と前記第2の層とは前記アルミニウムのモル分率が少なくとも5%異なり、少なくとも1対の互いに隣接する前記第1の層又は前記第2の層の少なくとも一方は、III族窒化物材料におけるアルミニウムのモル分率が異なる短周期超格子を備えるものであり、
前記転位ベンディング構造の前記サファイア基板とは反対側の面上にアルミニウム及びガリウムを含むIII族窒化物材料で構成されるn型クラッド層を形成し、
前記n型クラッド層の前記転位ベンディング構造とは反対側の面上に活性層を形成する、発光デバイスの製造方法。 - 前記転位ベンディング構造は、少なくとも転位の曲げを誘導するのに十分な大きさのストレインを生成するように設計することをさらに含む、請求項17に記載の方法。
- 前記短周期超格子におけるアルミニウムのモル分率は50%未満の範囲で異なっている、請求項17に記載の方法。
- 前記モル分率における差をストレインの目標量に基づいて選択することを更に備える、請求項17に記載の方法。
- 前記モル分率における差を前記第1の層又は前記第2の層の少なくとも一方の厚みに基づいて選択することを更に備える、請求項17に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US201161441674P | 2011-02-11 | 2011-02-11 | |
US61/441,674 | 2011-02-11 | ||
US13/370,470 | 2012-02-10 | ||
US13/370,470 US8633468B2 (en) | 2011-02-11 | 2012-02-10 | Light emitting device with dislocation bending structure |
PCT/US2012/024774 WO2012109629A2 (en) | 2011-02-11 | 2012-02-11 | Light emitting device with dislocation bending structure |
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US (1) | US8633468B2 (ja) |
EP (1) | EP2673811B1 (ja) |
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US9412902B2 (en) | 2014-02-22 | 2016-08-09 | Sensor Electronic Technology, Inc. | Semiconductor structure with stress-reducing buffer structure |
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KR102318317B1 (ko) | 2014-05-27 | 2021-10-28 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조 |
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JP6986349B2 (ja) | 2014-05-27 | 2021-12-22 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | n型超格子及びp型超格子を備える電子デバイス |
KR102439708B1 (ko) | 2014-05-27 | 2022-09-02 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 광전자 디바이스 |
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CN108808446B (zh) * | 2018-06-27 | 2020-11-27 | 潍坊华光光电子有限公司 | 一种具有位错折断结构的GaN基激光器外延结构及其生长方法 |
CN109830580B (zh) * | 2019-01-29 | 2021-10-08 | 华灿光电(浙江)有限公司 | 氮化镓基发光二极管外延片及其制造方法 |
CN111725364A (zh) * | 2019-03-20 | 2020-09-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 短波长深紫外led外延结构、其p型层材料及制法与应用 |
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TWI529960B (zh) | 2016-04-11 |
KR101677227B1 (ko) | 2016-11-17 |
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TWI610458B (zh) | 2018-01-01 |
EP2673811A2 (en) | 2013-12-18 |
WO2012109629A2 (en) | 2012-08-16 |
KR20160006246A (ko) | 2016-01-18 |
EP2673811B1 (en) | 2017-12-13 |
CN103597618B (zh) | 2016-12-21 |
US20120205619A1 (en) | 2012-08-16 |
EP2673811A4 (en) | 2014-05-21 |
CN103597618A (zh) | 2014-02-19 |
TW201304185A (zh) | 2013-01-16 |
KR20130116363A (ko) | 2013-10-23 |
TW201613128A (en) | 2016-04-01 |
JP2014509077A (ja) | 2014-04-10 |
WO2012109629A3 (en) | 2012-10-11 |
US8633468B2 (en) | 2014-01-21 |
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