JP5772213B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP5772213B2 JP5772213B2 JP2011113067A JP2011113067A JP5772213B2 JP 5772213 B2 JP5772213 B2 JP 5772213B2 JP 2011113067 A JP2011113067 A JP 2011113067A JP 2011113067 A JP2011113067 A JP 2011113067A JP 5772213 B2 JP5772213 B2 JP 5772213B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- layer
- diode
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011113067A JP5772213B2 (ja) | 2011-05-20 | 2011-05-20 | 発光素子 |
CN201210154027.7A CN102790070B (zh) | 2011-05-20 | 2012-05-17 | 发光元件 |
TW101117675A TWI467818B (zh) | 2011-05-20 | 2012-05-18 | Light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011113067A JP5772213B2 (ja) | 2011-05-20 | 2011-05-20 | 発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012243972A JP2012243972A (ja) | 2012-12-10 |
JP5772213B2 true JP5772213B2 (ja) | 2015-09-02 |
Family
ID=47155431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011113067A Expired - Fee Related JP5772213B2 (ja) | 2011-05-20 | 2011-05-20 | 発光素子 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5772213B2 (zh) |
CN (1) | CN102790070B (zh) |
TW (1) | TWI467818B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160015685A (ko) * | 2014-07-31 | 2016-02-15 | 서울바이오시스 주식회사 | 보호 소자를 포함하는 발광 다이오드 칩 및 이를 포함하는 발광 장치 |
CN108110024A (zh) * | 2018-01-16 | 2018-06-01 | 福建兆元光电有限公司 | 一种半导体发光元件 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW492202B (en) * | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
TWI220321B (en) * | 2003-06-19 | 2004-08-11 | Uni Light Technology Inc | Light-emitting device and forming method thereof |
TWI220578B (en) * | 2003-09-16 | 2004-08-21 | Opto Tech Corp | Light-emitting device capable of increasing light-emitting active region |
TW200501464A (en) * | 2004-08-31 | 2005-01-01 | Ind Tech Res Inst | LED chip structure with AC loop |
JP2006237104A (ja) * | 2005-02-23 | 2006-09-07 | Matsushita Electric Ind Co Ltd | サージ保護用半導体素子およびその製造方法 |
KR100652864B1 (ko) * | 2005-12-16 | 2006-12-04 | 서울옵토디바이스주식회사 | 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드 |
JP4978014B2 (ja) * | 2006-01-30 | 2012-07-18 | サンケン電気株式会社 | 半導体発光装置及びその製造方法 |
KR100765075B1 (ko) * | 2006-03-26 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광 소자 및 그 제조방법 |
CN101345235B (zh) * | 2008-08-25 | 2011-08-17 | 广州南科集成电子有限公司 | 带静电保护功能的led芯片的制造方法 |
US9142592B2 (en) * | 2009-04-09 | 2015-09-22 | Infineon Technologies Ag | Integrated circuit including ESD device |
CN101916769A (zh) * | 2010-05-19 | 2010-12-15 | 武汉华灿光电有限公司 | 抗静电氮化镓基发光器件及其制作方法 |
-
2011
- 2011-05-20 JP JP2011113067A patent/JP5772213B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-17 CN CN201210154027.7A patent/CN102790070B/zh not_active Expired - Fee Related
- 2012-05-18 TW TW101117675A patent/TWI467818B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN102790070A (zh) | 2012-11-21 |
JP2012243972A (ja) | 2012-12-10 |
TW201301589A (zh) | 2013-01-01 |
CN102790070B (zh) | 2015-03-04 |
TWI467818B (zh) | 2015-01-01 |
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