1220321 五、發明說明（1) 一、 【發明所屬之技術領域】 本發明係關於一種發光二極體元件與其形成方法，特 別是一種具有高製程良率及較大發光面積之發光二極體元 件與其形成方法。 二、 【先前技術】 近年來發光二極體產業的發展朝向氮化鎵（Gallium N i t r i d e)基半導體例如氮化鎵化合物半導體，作為用以 發出光波長範圍介於綠光、藍光與紫外光之間的短波長發 光二極體。短波長發光二極體由於具有高頻率或短波長可 用作為綠光及藍光於全彩之應用，藍光與紫光發光二極體 更可經由過能量轉換做成白光光源。 傳統上，為了增加氮化鎵/藍寶石發光二極體的發光 面積，而將電極接點置於對角線兩端以增加發光面積。但 是為了將電極接點與外界連接以驅動發光二極體，必須將 電極接點以導線穿過一形成於發光二極體頂端的金屬墊（ Pad)或電極接墊（Contact Pads)。這樣的設計會造成 發光二極體的發光面積遭到遮蔽，特別是俯視發光二極體 時，亦即發光二極體的發光面積實質上變小。此外，此傳 統結構易造成電流過度集中於兩個金屬墊之間，亦即造成 電流壅塞而影響元件壽命。 如以上所述，此化合物半導體發光二極體必須以電極1220321 V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to a light-emitting diode element and a method for forming the same, particularly a light-emitting diode element having a high process yield and a large light-emitting area. And how to form it. 2. [Previous technology] In recent years, the development of the light-emitting diode industry has been oriented towards Gallium Nitride-based semiconductors such as gallium nitride compound semiconductors, which are used to emit light in a wavelength range between green, blue, and ultraviolet light. Between short-wavelength light emitting diodes. Short-wavelength light-emitting diodes can be used as green and blue light for full-color applications due to their high frequency or short wavelength. Blue- and purple-light-emitting diodes can be converted into white light sources through energy conversion. Traditionally, in order to increase the light emitting area of a gallium nitride / sapphire light emitting diode, electrode contacts are placed at both ends of a diagonal line to increase the light emitting area. However, in order to connect the electrode contacts with the outside world to drive the light emitting diode, the electrode contacts must be led through a metal pad (Contact Pads) or electrode pads (Contact Pads) formed on the top of the light emitting diode. Such a design will cause the light-emitting area of the light-emitting diode to be shielded, especially when the light-emitting diode is viewed from the bottom, that is, the light-emitting area of the light-emitting diode becomes substantially smaller. In addition, this traditional structure is prone to cause excessive current concentration between the two metal pads, which can cause current congestion and affect component life. As mentioned above, this compound semiconductor light emitting diode must be an electrode
第6頁 1220321 五、發明說明（2) 接點置於發光面對角線兩端。由於為了將電極接點與外界 連接以驅動發光二極體，必須將電極接點以導線與外界連 接以驅動發光二極體，而電極接點與導線體積不可能太小 ，故將造成發光二極體的發光面積實質縮小。此外，當元 件尺寸縮小時，一般具正方形輪廓之發光二極體由於其電 極接點位於其對角線兩端，此時電極接點將十分接近且更 容易形成電流壅塞而影響元件特性，如可靠度降低且因電 極過度接近，打線良率將因而降低。另外，由於藍寶石底 材係屬六方晶系（H e X a g ο n a 1 L a 11 i c e)，將發光二極體 切成正方形容易造成元件劈裂使得製程良率降低。 有鑑於上述傳統元件結樣與製程的缺點，因此有必要 發展出一種新穎進步的元件結構與製程，此元件結構與製 程能克服上述傳統元件結構與製程之限制。 三、【發明内容】 本發明所欲解決之技術問題為提高元件切割（ Scribing)的良率。 本發明所欲解決之技術問題為提供一尺寸縮小之覆晶 封裝發光二極體元件。 本發明所欲解決之技術問題為提供一當元件尺寸縮小 時仍具有足夠電極間距離之發光二極體元件。Page 6 1220321 V. Description of the invention (2) The contacts are placed at both ends of the diagonal line of the light-emitting surface. In order to connect the electrode contact with the outside world to drive the light emitting diode, the electrode contact must be connected with the wire to the outside world to drive the light emitting diode, and the volume of the electrode contact and the wire cannot be too small, so the light emitting diode will be caused. The light emitting area of the polar body is substantially reduced. In addition, when the size of the component is reduced, generally, a square-shaped light-emitting diode has its electrode contacts located at both ends of its diagonal. At this time, the electrode contacts will be very close and it will be easier to form a current congestion, which affects the characteristics of the device, such as reliability. The degree of reduction is reduced and the yield of the wire is reduced due to the excessive electrode proximity. In addition, since the sapphire substrate system is a hexagonal crystal system (H e X a g ο n a 1 L a 11 i c e), cutting the light-emitting diode into a square is likely to cause element splitting and reduce the process yield. In view of the shortcomings of the traditional component assembly and manufacturing process described above, it is necessary to develop a novel and improved component structure and manufacturing process. This component structure and manufacturing process can overcome the limitations of the traditional component structure and manufacturing process. 3. Summary of the Invention The technical problem to be solved by the present invention is to improve the yield of component cutting (Scribing). The technical problem to be solved by the present invention is to provide a flip-chip packaged light emitting diode device with reduced size. The technical problem to be solved by the present invention is to provide a light-emitting diode device that still has a sufficient distance between electrodes when the device size is reduced.
第7頁 1220321 五、發明說明（3) 發 之 勻 均 度 亮 C.BC. 種一 供 提 為 題 問 術 技 之 決 解 欲。 所件 明元 發體 本極 二 光 良 產 生 加 增 能 •-full 種 - 供 提 為。 題程 問製 術件 技元 之體 決極 解二 欲光 所發 明之 發量 本產 與 率 大。 件程 元製 樣與 同構 在結 種件 一 元 供體 提極 為二 題光 問發 術之 技積 之面 決光 解發 欲大 所有 明具 發下 本況 情 列之 下型 含電 包導 段一 手第 術一 技有 之具 題一 問成 決形 解著 明接 發， 本材 ， 底 中一 例供 施提 實先 一 首 在。 驟 步 上 材 ο 該上 於層 層體層 體導體 導半導 半雜半 雜摻雜 摻一摻 一第二 第該第 主 光 發 該 於 於之導 層型光 動電透 主導 一 光二成 發第形 一 一後 成有然 形具。 一上 成層 形 著 接 後 然 複電 移一 轉第 並之 ，端 上一 層線 體角 導對 半之 雜長 摻較 J〆嘁 45# 二案 第圖 該形 於菱 層一 體第 個 數 複 於 位 個 數 透 該 入 進 案 圖 極 摻 二 第 該 預一 之 層 、體 層導 體半 導雜 光摻 第 亥 =0 至 並 層 主一 光第 發該 與中 層其 體’ 導度 半深 雜定 之 案 圖 形 菱 邊 底之 該端 蓋二 覆線 層角 電對 介之 一長 成較 形案 著圖 接形 〇 菱 行二 平第 向個 方數 裂複 劈於 易位 之移 材轉 底並 該’ 與材 光一極 透之電 該案一 出圖第 露形個 暴菱數 並二複 層第成 電該形 介中後 該其然 至 ， 〇 案層行 圖體平 極導向 電半方 二雜裂 第摻劈 與一易 一 第之 第該材 該與底 個層該 數體與 複導邊Page 7 1220321 V. Description of the invention (3) The uniformity of the hair is bright. All pieces of Mingyuan hair body, two poles, Liangliang production and energy-enhancing • -full species-supply and withdrawal. Problem-solving system, technical components, technical element, final solution, two. The amount of hair produced by Yuguang is large. The process of sample preparation and isomorphism is based on the combination of the one-dimensional donor and the two-question photofabrication technique. The solution is to solve the problem. All the tools are issued. Duanyishouyishuyi has some questions to answer the question and answer the answer, this material, the bottom case for Shi Ti Shi first in the first one. Step material ο The upper layer layer body layer body conductor semiconducting semiconducting semi-doped semi-doped doped one doped second second the first main light emission the guide light type electro-optical electro-transmittance dominated one light two-phase hair After the first shape one by one into a natural shape. The upper layer is connected in layers, and then the power is shifted by one rotation. The end of the layer is mixed with the half length of the corner guide. The length of the half is more than that of J〆 嘁 45 #. The number of positions is transparent, the first layer is doped, the semiconducting stray light of the body layer is doped, and the first half of the light is mixed with the main layer of light. One of the two end caps of the edge cover of the fixed edge of the fixed pattern is formed into a relatively shaped case, and the shape is connected to the bottom. The second line of the second line is split and split to the bottom of the transposed moving material. And this' and the material are extremely transparent, the case is shown in the figure, the number of diamonds is exposed, and the multi-layered layer is formed. After this form is introduced, it should come. Fang Erzha first split, first split, first split, the material and the bottom layer, the number body and the complex guide edge
第8頁 1220321 五、發明說明（4) 與第二電極於該第一摻雜半導體層與該透光導體層。沿該 底材之易劈裂方向切割出複數個具有菱形輪廓之元件及藉 由覆晶封裝方式將該元件之該第一電極與該第二電極以銲 接凸塊連接至二元件固定電極。 對照本發明與先前技術之功效，由於傳統之化合物半 導體發光二極體必須以電極接點置於發光面對角線兩端， 故將造成發光二極體的發光面積實質縮小，且亮度將較為 不均勻。本發明利用藍寶石底材晶格排列的特性，沿其晶 格易劈裂方向切割晶圓並形成一具有菱形輪廓之發光二極 體元件，因此能提供具有較大發光面積之發光二極體元件 ，同時能增加發光二極體元件製程生產良率與產量。另外 ，由於使用覆晶封裝的製程及將電極置於菱形輪廓對角線 。故較小的元件仍能可靠地被製為覆晶式元件。 上述有關發明的内容及以下實施方式的說明僅為範例 並非限制。其他不脫離本發明之精神的等效改變或修飾均 應包含在的本發明的專利範圍之内。 四、【實施方式】 在此必須說明的是以下描述之製程步驟及結構並不包 含完整之製程及結構。本發明可以藉各種製程技術來實施 ，在此僅提及瞭解本發明所需之製程技術。Page 8 1220321 V. Description of the invention (4) and a second electrode on the first doped semiconductor layer and the transparent conductor layer. A plurality of components having a diamond-shaped outline are cut along the easy-to-split direction of the substrate, and the first electrode and the second electrode of the component are connected to the two component fixed electrodes by solder bumps by means of flip-chip packaging. Comparing the efficacy of the present invention and the prior art, since the conventional compound semiconductor light emitting diode must be placed at both ends of the light emitting diagonal with the electrode contacts, the light emitting area of the light emitting diode will be substantially reduced, and the brightness will be relatively Uneven. The invention utilizes the characteristics of the sapphire substrate lattice arrangement to cut the wafer along its easy-to-split lattice direction to form a light-emitting diode element with a diamond-shaped profile, so it can provide a light-emitting diode element with a large light-emitting area. At the same time, it can increase the production yield and output of light-emitting diode elements. In addition, due to the use of a flip-chip package process and placing the electrodes on the diagonal of the diamond-shaped outline. Therefore, smaller components can still be reliably manufactured as flip-chip components. The content of the above-mentioned invention and the description of the following embodiments are merely examples and are not limiting. Other equivalent changes or modifications that do not depart from the spirit of the invention should be included in the patent scope of the invention. Fourth, [implementation] What must be explained here is that the process steps and structures described below do not include a complete process and structure. The present invention can be implemented by various process technologies, and only the process technologies required to understand the present invention are mentioned here.
第9頁 1220321 五、發明說明（5) 以下將根據本發明所附圖示做詳細的說明，請注意圖 示均為簡單的形式且未依照比例描繪，而尺寸均被誇大以 利於瞭解本發明。 參考第一 A圖所示，顯示本發明之一實施例中一發光 二極體元件1 0。此發光二極體元件1 0包含一底材1 〇 2，此 底材1 0 2上可形成多層化合物半導體結構，例如氮化鎵相 關化合物半導體層。此多層化合物半導體層可由金屬有機 化學氣相沈積（M0CVD)法形成，但也可由分子束磊晶（ MBE)或其他化學氣相沈積法形成。此多層化合物半導體 層包含半導體層106、10 8與110。 發光二極體元件另包含透光導電層104。此透光導電 層1 0 4係以製程形成而非磊晶形成。透光導電層1 0 4為一透 光導體層(Transparent Conductive Layer，TCL)，而 半導體層108包含一主動（發光）層（Active Layer)。 半導體層1 〇 6與1 1 0包含具有相反導電性質（N型或P型）的 半導體層，亦即半導體層1 〇 6與1 1 0可包含多層結構。此多 層結構可包含未摻雜之半導體層以作為緩衝層（B u f f e r Layer)或包覆（Cladding Layer)層’或是 AlGaN/GaN及 I nGaN等層之組合。 本發明之具有菱形輪廓的發光二極體元件，可利用各 種製程形成。一種形成方法為例如首先利用蠢晶形成半導Page 9 1220321 V. Description of the invention (5) The following is a detailed description based on the drawings attached to the present invention. Please note that the drawings are simple forms and are not drawn to scale, and the dimensions are exaggerated to facilitate understanding of the present invention. . Referring to FIG. 1A, a light emitting diode element 10 according to an embodiment of the present invention is shown. The light emitting diode element 10 includes a substrate 102, and a multilayer compound semiconductor structure, such as a gallium nitride related compound semiconductor layer, can be formed on the substrate 102. The multilayer compound semiconductor layer may be formed by a metal organic chemical vapor deposition (MOCVD) method, but may also be formed by molecular beam epitaxy (MBE) or other chemical vapor deposition methods. The multilayer compound semiconductor layer includes semiconductor layers 106, 108, and 110. The light emitting diode element further includes a light-transmitting conductive layer 104. The transparent conductive layer 104 is formed by a manufacturing process instead of an epitaxial layer. The transparent conductive layer 104 is a transparent conductive layer (TCL), and the semiconductor layer 108 includes an active layer. The semiconductor layers 106 and 110 include semiconductor layers having opposite conductive properties (N-type or P-type), that is, the semiconductor layers 106 and 110 may include a multilayer structure. The multi-layer structure may include an undoped semiconductor layer as a buffer layer or a cladding layer ’or a combination of layers such as AlGaN / GaN and InGaN. The diamond-shaped light emitting diode element of the present invention can be formed by various processes. One method of formation is, for example, to first form a semiconductor using stupid crystals
第10頁 1220321 五、發明說明（6) ^^—- 體層1 0 6、1 〇 8與1 1 〇，接著蝕刻半導體層丨〇 6、 1 1 0 1 0 6之一部分形成一凹槽以容納一電極並連接 辟、 106，再以製程形成透光導電層1〇4與透明介電層Η?。^曰 著再形成電極於菱形圖案較長之對角線兩端，^後再以 一 B圖所示之切割方式形成本發明之發光二極體元件。 發明之具有瓮形輪廓的發光二極體元件亦可以其他形成方 法製成。第一 A圖所示之電極丨丨4、1丨6與導體層^丨8僅為 例，並非限制。電極1 1 4與1 1 6可使用相同材料且同時彤^ ，或使用不同材料。甚至電極118可省略。菱形圖案與電 極之形成可利用光罩、微影與蝕刻製程。電極i丨4與i 1 6與 1 1 8及透光導電層1 〇 4可由微影與物理/化學沈積法^傳统' 之蒸鍍方式形成。介電層1 1 2將半導體層1 06與u 〇隔開、。 Z半導體層1 〇 6與11 0透過電極11 6與11 4連接至驅動電路。 介電層Π 2玎為一二氧化矽層，但不限於二氧化矽層，例 如氮化石夕或透明之高分子層。而介電層1 1 2可由微影、蝕 刻與化學氣相沈積法或傳統之蒸鍍法形成。介電層π 2對 於覆晶元件為必備，但對於非覆晶元件則或可省略。 若使用氮化鎵（GaN)化合物半導體，則底材1 〇 2包含 六方晶系（Hexagonal Lattice)之藍寶石（Sapphire) 底材，。丰·導體層10 6與110包含一具有一第一導電型之第 知雜氮化鎵半導體層與一具有一第二導電型之第二摻雜 氮化鎵半導體層。半導體層1 0 6與11 〇可同時包含未摻雜氮 化鎵緩衝層（Buffer Layer)或包覆（cladding Layer) 1220321 五、發明說明（7) 層。半導體層1 0 6與1 1 〇為N型層與P型層，而電極1 1 4與1 1 6 則為P型電極與N型電極層。此外底材1 〇 2亦可為碳化矽（ S i C)底材或其他耐高溫且透明之底材。 參考弟一 B圖所示，顯示一包含第一 A圖所示之發光二 極體元件1 0的晶圓1之俯視圖。第一 A圖所示之發光二極體 元件1 0具有俯視菱形輪廓，而電極Π 4與1 1 8則位於較長之 對角線兩端上，如第一 C圖所示。第一 D圖與第一 E圖則顯 示不同構形之電極1 1 4與1 1 8。第一 D圖所示之電極1 1 4具有 二延伸區域，使電極1 1 4與1 1 8間之距離不論於何處均不至 於差距過大。第一 E圖所示之電極1 1 4與1 1 8各自具有一延 伸區域，使電極Π 4與1 1 8之間距不論於何處均十分均勻。 為了利於切割，可形成溝槽於發光二極體元件第一 C圖所 示之切割線上。 參考第一 F圖所示，本發明之發光二極體元件1 〇以凸 塊（Bump) 1 6與1 8固定於元件固定電極1 2與1 4上。電極1 2 與1 4則連接至電路，使本發明之發光二極體元件1 〇成為發 光一^極體燈（L a m p)。發光二極體元件1 0係以覆晶（Flip Ch i p)封裝的方式，以電極1 1 4與1 1 8分別與凸塊1 6與1 8接 合。但上述之結構不限於以覆晶封裝的方式結合，亦可以 表面黏著（Surface Mounting)技術接合。第一 A圖所示 電極11 8並非必要，亦可省略。而第一 F圖中之凸塊（Bump )1 6與1 8亦可以導電膠取代。上述之結構不限於以覆晶封Page 10, 1220321 V. Description of the invention (6) ^^ --- The bulk layer 1 06, 1 08, and 1 1 0, and then the semiconductor layer is etched to form a groove to accommodate a portion An electrode is connected in parallel to the substrate 106, and then a light-transmitting conductive layer 104 and a transparent dielectric layer are formed in a manufacturing process. The electrode is formed at the two ends of the longer diagonal of the rhombus pattern, and then the light emitting diode element of the present invention is formed by a cutting method shown in FIG. B. The invention of the light-emitting diode element having a 瓮 -shaped profile can also be made by other forming methods. The electrodes 丨 4, 1 丨 6 and the conductor layer ^ 丨 8 shown in the first A diagram are merely examples and are not limiting. The electrodes 1 1 4 and 1 1 6 may be made of the same material and simultaneously, or different materials. Even the electrode 118 may be omitted. The diamond pattern and electrodes can be formed using photomask, lithography, and etching processes. The electrodes i 丨 4 and i1 6 and 1 1 8 and the light-transmitting conductive layer 104 can be formed by lithography and physical / chemical deposition methods ^ the traditional method of vapor deposition. The dielectric layer 1 1 2 separates the semiconductor layer 106 from u 0. The Z semiconductor layers 106 and 110 are connected to the driving circuit through the electrodes 116 and 114. The dielectric layer Π 2 玎 is a silicon dioxide layer, but is not limited to a silicon dioxide layer, such as a nitride nitride layer or a transparent polymer layer. The dielectric layer 1 12 can be formed by lithography, etching, and chemical vapor deposition or a conventional evaporation method. The dielectric layer π 2 is necessary for a flip-chip device, but may be omitted for a non- flip-chip device. If a gallium nitride (GaN) compound semiconductor is used, the substrate 102 includes a Sapphire substrate of Hexagonal Lattice. The conductor layers 106 and 110 include a first known gallium nitride semiconductor layer having a first conductivity type and a second doped gallium nitride semiconductor layer having a second conductivity type. The semiconductor layers 106 and 110 may include an undoped gallium nitride buffer layer or a cladding layer. 1220321 V. Description of the invention (7) layer. The semiconductor layers 106 and 110 are N-type layers and P-type layers, and the electrodes 1 4 and 116 are P-type electrodes and N-type electrode layers. In addition, the substrate 102 can also be a silicon carbide (S i C) substrate or other high-temperature-resistant and transparent substrate. Referring to FIG. 1B, a top view of a wafer 1 including the light-emitting diode element 10 shown in FIG. 1A is shown. The light-emitting diode element 10 shown in the first picture A has a diamond-shaped outline in plan view, and the electrodes Π 4 and 1 18 are located at both ends of a longer diagonal line, as shown in the first picture C. The first D picture and the first E picture show electrodes 1 1 4 and 1 1 8 having different configurations. The electrode 1 1 4 shown in the first D figure has two extension regions, so that the distance between the electrodes 1 1 4 and 1 1 8 is not too wide no matter where it is. The electrodes 1 1 4 and 1 1 8 shown in the first E diagram each have an extended area, so that the distance between the electrodes Π 4 and 1 1 8 is very uniform everywhere. In order to facilitate cutting, a groove may be formed on the cutting line shown in the first C picture of the light emitting diode element. Referring to FIG. 1F, the light emitting diode element 10 of the present invention is fixed to the element fixing electrodes 12 and 14 with bumps 16 and 18. The electrodes 12 and 14 are connected to a circuit, so that the light-emitting diode element 10 of the present invention becomes a light-emitting diode lamp (L a m p). The light-emitting diode element 10 is packaged in a flip chip package, and electrodes 1 1 4 and 1 1 8 are connected to the bumps 16 and 18, respectively. However, the above-mentioned structure is not limited to being combined in a flip-chip package, and can also be joined by surface mounting technology. The electrode 118 shown in the first A diagram is not necessary, and may be omitted. The bumps 16 and 18 in the first F figure can also be replaced by conductive glue. The above structure is not limited to flip-chip sealing
第12頁 1220321 五、發明說明（8) 裝的方式結合，亦可以表面黏著（Surface Mounting)技 術接合。 參考第一 G圖所示，本發明之發光二極體元件1 0以覆 晶封裝的方式固定於電路板1 2 2之電極接觸墊1 2 0上。電極 接觸墊1 2 0則連接至電路。。發光二極體元件1 0係以覆晶 封裝的方式，以電極1 1 4與11 8分別與接觸墊1 2 0以銲接或 導電膠接合，亦可用凸塊1 6與1 8接合。上述之結構不限於 以覆晶封裝的方式結合，亦可以表面黏著技術接合。 本發明利用藍寶石底材晶格排列的特性，沿其晶格易 劈裂方向切割晶圓並形成一具有菱形輪廓之發光二極體元 件，因此能提供具有大發光面積、電極距離較遠之發光二 極體元件，同時能增加發光二極體元件製程生產良率與產 量，特別是切割（Scribing)時的良率與當元件尺寸縮小 時可避免電流壅塞。另外，由於使用覆晶封裝的製程及將 電極置於菱形輪廓對角線，發光亮度均勻，並可做成較小 之覆晶封裝元件。 上述有關發明的詳細說明僅為範例並非限制。其他不 脫離本發明之精神的等效改變或修飾均應包含在的本發明 的專利範圍之内。Page 12 1220321 V. Description of the invention (8) The combination of mounting methods can also be combined with Surface Mounting technology. Referring to FIG. 1G, the light-emitting diode element 10 of the present invention is fixed on the electrode contact pad 12 of the circuit board 12 in a flip-chip package. The electrode contact pad 1 2 0 is connected to the circuit. . The light emitting diode element 10 is in a flip-chip package, and electrodes 1 4 and 11 8 are respectively bonded to the contact pad 1 2 0 by soldering or conductive adhesive, and bumps 16 and 18 can also be bonded. The above structure is not limited to being bonded in a flip-chip package, and can also be bonded by surface adhesion technology. The invention utilizes the characteristics of the lattice arrangement of the sapphire substrate, cuts the wafer along its easy-to-split lattice direction, and forms a light-emitting diode element with a diamond-shaped profile, so it can provide light with a large light-emitting area and a relatively long electrode distance Diode elements can also increase the yield and yield of light-emitting diode element manufacturing processes, especially the yield during cutting and the avoidance of current congestion when the size of the element is reduced. In addition, because the flip-chip packaging process is used and the electrodes are placed diagonally to the diamond-shaped outline, the luminous brightness is uniform, and smaller flip-chip package components can be made. The above detailed description of the invention is merely an example and not a limitation. Other equivalent changes or modifications that do not depart from the spirit of the invention should be included in the patent scope of the invention.
1220321 圖式簡單說明 更 能 點 優 和 徵 特 的 9 他 其 之 述 1上 明明 說發 單本 簡讓 式能 圖 了 ί 為 Λ 五 作 式 圖 附 所 合 配 並 施 實 佳 較一 舉 特 文： 下下 ，如 懂明 易說 顯細 月羊 日 古口 極二 光 發 體 導 半 1 中 例 施 實 - 之 明 發 本 示 顯 圖 A一； 第件 元 體 圖 視 俯 之 B 圓 一 晶 第的 件 元 示 頁 圖 體 極二 光 發 體 導 半 之 示 所 圖 A一 第 含 包 元 體 極二 光 發 體 導 半 之 例 施 實一 明 發 本 示 顯； 圖 C 圖 一視 第俯 之 件 體 極二 光 發 體 導 半 之 例 施 實一 另 明 發 本 示 顯]; 圖 圖 j D 視 一俯 第之 件 元 體 極二 光 發 體 導 半 之 例 施 實 1 另 明 發 本 示 顯]; 圖 圖 j E視 一俯 第之 件 元 光 發 體 導 半 之 明 發 本 示 顯 圖 極 電 定 固 件 元 於 定 固 以 式 方 一的 第裝 封 晶 覆 由 藉 件 元 體 極 及 覆 由 藉 件 元 體 極二 光 發 體 導 半 之 明 發 本 示 顯 圖 G一 第1220321 Schematic illustrations are more able to point out the best and special features 9 Other descriptions 1 It is stated clearly that the simple consignment of the bill can be plotted ί For the Λ five-stroke diagram attached and implemented, it is better than a special article ： Below, if you understand clearly, it is easy to say that the month of the sheep and the ancient mouth of the two poles of light hair guide half 1 in the example of the implementation-the Mingfa This is the display of the first picture A; The first piece of the page shows the body of the two poles of the light guide half of the diagram shown in Figure A-the first example of the inclusion of the body of the two poles of the light guide half of the implementation of a bright hair this display; Figure C An example of a light-emitting half of the polar body of the body that is placed on top of the body, and a display of this display]; Figure JD An example of a light-induced half of the polar body of the body of the body that is placed on the top of the body and is displayed 1 separately Send this display]; Figure JE as the first piece of light, the light-emitting body is half-guided, the display of this display is extremely fixed, and the fixing element is fixed in the first way. Element body pole and cover The display of the body guide is shown in the figure.
第14頁 1220321 圖式簡單說明 晶封裝的方式以固定於電路板上 主要部分之代表符號： 1晶圓 10發光二極體元件 1 2電極 1 4電極 1 6凸塊 1 8凸塊 1 0 2底材 1 0 4透光導體層 1 0 6半導體層 10 8主動（發光）導體層 1 1 0半導體層 1 1 2介電層 1 1 4電極 1 1 6電極 1 18導體層 1 2 0電極接觸墊 1 2 2電路板1220321 on page 14 The diagram simply illustrates the way the crystal package is fixed to the main symbols on the circuit board: 1 wafer 10 light emitting diode element 1 2 electrode 1 4 electrode 1 6 bump 1 8 bump 1 0 2 Substrate 1 0 4 Transparent conductor layer 1 0 6 Semiconductor layer 10 8 Active (light emitting) conductor layer 1 1 0 Semiconductor layer 1 1 2 Dielectric layer 1 1 4 electrode 1 1 6 electrode 1 18 conductor layer 1 2 0 electrode contact Pad 1 2 2 circuit board
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