JP5757951B2 - 有機電子装置およびその製造方法 - Google Patents

有機電子装置およびその製造方法 Download PDF

Info

Publication number
JP5757951B2
JP5757951B2 JP2012531434A JP2012531434A JP5757951B2 JP 5757951 B2 JP5757951 B2 JP 5757951B2 JP 2012531434 A JP2012531434 A JP 2012531434A JP 2012531434 A JP2012531434 A JP 2012531434A JP 5757951 B2 JP5757951 B2 JP 5757951B2
Authority
JP
Japan
Prior art keywords
organic
electronic device
anion
matrix material
salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012531434A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013506984A5 (enExample
JP2013506984A (ja
Inventor
シュミート ギュンター
シュミート ギュンター
ハウケ ヴェムケン ヤン
ハウケ ヴェムケン ヤン
カーニツ アンドレアス
カーニツ アンドレアス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Oled GmbH
Original Assignee
Osram Oled GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled GmbH filed Critical Osram Oled GmbH
Publication of JP2013506984A publication Critical patent/JP2013506984A/ja
Publication of JP2013506984A5 publication Critical patent/JP2013506984A5/ja
Application granted granted Critical
Publication of JP5757951B2 publication Critical patent/JP5757951B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
JP2012531434A 2009-09-30 2010-09-30 有機電子装置およびその製造方法 Expired - Fee Related JP5757951B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009047880A DE102009047880A1 (de) 2009-09-30 2009-09-30 Organische elektronische Vorrichtung und Verfahren zu dessen Herstellung
DE102009047880.9 2009-09-30
PCT/EP2010/064592 WO2011039323A2 (de) 2009-09-30 2010-09-30 Organische elektronische vorrichtung und verfahren zu dessen herstellung

Publications (3)

Publication Number Publication Date
JP2013506984A JP2013506984A (ja) 2013-02-28
JP2013506984A5 JP2013506984A5 (enExample) 2013-07-25
JP5757951B2 true JP5757951B2 (ja) 2015-08-05

Family

ID=43085757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012531434A Expired - Fee Related JP5757951B2 (ja) 2009-09-30 2010-09-30 有機電子装置およびその製造方法

Country Status (7)

Country Link
US (1) US9520570B2 (enExample)
EP (1) EP2483945B1 (enExample)
JP (1) JP5757951B2 (enExample)
KR (1) KR101770437B1 (enExample)
CN (1) CN102576823B (enExample)
DE (1) DE102009047880A1 (enExample)
WO (1) WO2011039323A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5722238B2 (ja) 2010-01-15 2015-05-20 出光興産株式会社 含窒素複素環誘導体及びそれを含んでなる有機エレクトロルミネッセンス素子
DE102012211869A1 (de) 2012-07-06 2014-01-09 Osram Opto Semiconductors Gmbh Organisches Licht emittierendes Bauelement
DE102012217574A1 (de) 2012-09-27 2014-03-27 Siemens Aktiengesellschaft Phosphoroxo-Salze als n-Dotierstoffe für die organische Elektronik
DE102013106949A1 (de) * 2013-07-02 2015-01-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, organische funktionelle Schicht und Verfahren zur Herstellung eines optoelektronischen Bauelements
EP2960315A1 (de) 2014-06-27 2015-12-30 cynora GmbH Organische Elektrolumineszenzvorrichtung
JP6954833B2 (ja) 2014-09-17 2021-10-27 サイノーラ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング エミッタとして使用するための有機分子
DE102015210388A1 (de) * 2015-06-05 2016-12-08 Siemens Aktiengesellschaft Organische Heterozyklische Alkalimetallsalze als n-Dotierstoffe in der Organischen Elektronik
EP3312896B1 (en) * 2016-10-24 2021-03-31 Novaled GmbH Organic electroluminescent device comprising a redox-doped electron transport layer and an auxiliary electron transport layer
JP2019026619A (ja) * 2017-08-03 2019-02-21 国立大学法人山形大学 ターピリジン誘導体、及びそれを用いた有機電子素子
CN109994651B (zh) * 2017-12-29 2020-12-25 昆山国显光电有限公司 一种有机电致发光器件及其制备方法
KR102291411B1 (ko) * 2019-12-09 2021-08-23 엘티소재주식회사 헤테로고리 화합물 및 이를 포함하는 유기 발광 소자
US20210336151A1 (en) * 2020-04-28 2021-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Device Material, Electron-Transport Layer Material, Organic Compound, Light-Emitting Device, Light-Emitting Apparatus, Electronic Device, and Lighting Device
CN112194614B (zh) * 2020-10-14 2022-04-26 新乡医学院 一种特异性识别Fe3+的三联吡啶荧光探针及其合成方法和应用
CN114695799A (zh) * 2020-12-29 2022-07-01 常州强力昱镭光电材料有限公司 一种有机电致发光元件
CN112903331B (zh) * 2021-02-25 2022-07-29 北京空间飞行器总体设计部 一种水升华器供水压力地面等效模拟装置及方法
KR20230162926A (ko) * 2021-03-26 2023-11-29 도레이 카부시키가이샤 유기 el 표시 장치 및 그 제조 방법
CN115207228B (zh) * 2021-04-08 2025-06-03 常州强力电子新材料股份有限公司 有机电致发光元件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064151A (en) * 1997-12-08 2000-05-16 Motorola, Inc. Organic electroluminescent device with enhanced performance
JP2004193011A (ja) 2002-12-12 2004-07-08 Fuji Photo Film Co Ltd 有機電界発光素子
JP4366106B2 (ja) 2003-04-30 2009-11-18 キヤノン株式会社 発光素子
US7608855B2 (en) 2004-04-02 2009-10-27 Spansion Llc Polymer dielectrics for memory element array interconnect
US7622200B2 (en) 2004-05-21 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting element
JP4988152B2 (ja) * 2004-08-03 2012-08-01 株式会社Ａｄｅｋａ 蛍光性陰イオンおよび蛍光性陽イオンからなる塩
JP2007226043A (ja) 2006-02-24 2007-09-06 Mitsubishi Paper Mills Ltd 酸化亜鉛膜の形成方法及び透明導電性基材
DE102006053644A1 (de) 2006-11-14 2008-06-12 Siemens Ag Neuartiges hochleitfähiges organisches Ladungsträgertransportmaterial
JP5656338B2 (ja) * 2007-03-12 2015-01-21 ケミプロ化成株式会社 新規な１，１０−フェナントロリン誘導体、電子輸送材料、電子注入材料およびそれを含有する有機電界発光素子
JP5008584B2 (ja) * 2008-02-15 2012-08-22 富士フイルム株式会社 有機電界発光素子及び表示装置
JP5515234B2 (ja) 2008-03-31 2014-06-11 住友化学株式会社 中間層形成塗布液、および有機エレクトロルミネッセンス素子の製造方法、並びに有機エレクトロルミネッセンス素子

Also Published As

Publication number Publication date
CN102576823B (zh) 2015-05-20
EP2483945A2 (de) 2012-08-08
DE102009047880A1 (de) 2011-03-31
US20120286253A1 (en) 2012-11-15
WO2011039323A2 (de) 2011-04-07
CN102576823A (zh) 2012-07-11
WO2011039323A3 (de) 2011-06-23
US9520570B2 (en) 2016-12-13
KR20120091133A (ko) 2012-08-17
JP2013506984A (ja) 2013-02-28
EP2483945B1 (de) 2016-11-02
KR101770437B1 (ko) 2017-09-05

Similar Documents

Publication Publication Date Title
JP5757951B2 (ja) 有機電子装置およびその製造方法
CN106062986B (zh) 包含膦氧化物基质和金属掺杂剂的n-掺杂的半导体材料
TWI584513B (zh) 顯示器
KR102581921B1 (ko) 극성 매트릭스 및 금속 도펀트를 포함하는 유기 발광 디바이스
Ding et al. A novel intermediate connector with improved charge generation and separation for large-area tandem white organic lighting devices
JP2015518653A (ja) 有機発光素子における半導体化合物の使用
JP7503521B2 (ja) 極性マトリクス、金属ドーパントおよび銀製カソードを含んでいる、有機発光デバイス
KR20110084406A (ko) 유기 전자 소자 및 그 제조 방법
Fan et al. High-efficiency phosphorescent hybrid organic–inorganic light-emitting diodes using a solution-processed small-molecule emissive layer
CN108431289B (zh) 用于制备含金属层的方法
KR102731961B1 (ko) 알칼리 금속 및 제2 금속을 포함하는 금속성 층
US10941168B2 (en) Phosphepine matrix compound for a semiconducting material
KR102697369B1 (ko) 두 개의 금속 도펀트를 포함한 n-도핑된 반도전성 물질

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20130604

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140722

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141003

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141010

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141110

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150121

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20150313

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150511

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150602

R150 Certificate of patent or registration of utility model

Ref document number: 5757951

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees