JP5756675B2 - 光半導体素子用パッケージ及び光半導体装置 - Google Patents
光半導体素子用パッケージ及び光半導体装置 Download PDFInfo
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Description
図3及び図4は実施形態の光半導体素子用パッケージのセラミックス配線基板部を示す斜視図、図5は実施形態の光半導体素子用パッケージを示す図、図6は実施形態の光半導体素子用パッケージに光半導体素子が実装された様子を示す図、図7は実施形態の光半導体装置を示す斜視図である。
Claims (11)
- 中央部に光半導体素子を実装するための実装領域を有するセラミックス配線基板部と、
前記セラミックス配線基板部の上に備えられ、前記光半導体素子を接続するための素子用電極と、
前記セラミックス配線基板部に備えられ、前記素子用電極に電気的に接続された外部接続端子と、
前記セラミックス配線基板部の上面に備えられた上側グランドプレーンと、
前記上側グランドプレーンに形成された半円周状の開口部と、
前記セラミックス配線基板部の下面に備えられた下側グランドプレーンと、
前記セラミックス配線基板部の上に金属ロウ材によって接合され、中央部に前記素子用電極及び前記実装領域を露出させる開口部を備え、かつ開口部の外周部に、上方に突出するリング状突出部が設けられた金属シールリングとを有し、
前記金属シールリングの外形は、前記セラミックス配線基板部の外形より大きいことを特徴とする光半導体素子用パッケージ。 - 前記セラミックス配線基板部の外形は、六角形又は八角形であることを特徴とする請求項1に記載の光半導体素子用パッケージ。
- 前記セラミックス配線基板部の側壁の下端から上側に凹部が設けられており、前記外部接続電極は前記凹部の内面に設けられていることを特徴とする請求項1又は2に記載の光半導体素子用パッケージ。
- 前記セラミックス配線基板部の側壁の下端から上側に凹部が設けられており、前記凹部の内面に、前記上側グランドプレーン及び前記下側グランドプレーンに電気的に接続されるグランド用接続電極が形成されていることを特徴とする請求項1又は2に記載の光半導体素子用パッケージ。
- 前記セラミックス配線基板部の前記実装領域にキャビティが設けられており、前記光半導体素子は前記キャビティの底部にサブマウントを介して実装されること特徴とする請求項1又は2に記載の光半導体素子用パッケージ。
- 前記素子用電極は、前記セラミックス配線基板部の内部に形成された配線層を介して前記外部接続電極に接続されていることを特徴とする請求項1乃至5のいずれか一項に記載の光半導体素子用パッケージ。
- 請求項1乃至6のいずれかの光半導体素子用パッケージと、
前記実装領域に実装された前記光半導体素子と、
前記光半導体素子の電極と前記素子用電極とを接続する金属ワイヤと、
前記金属シールリングの上に設けられ、中央部にガラス窓を備えて前記光半導体素子を気密封止する金属キャップとを有することを特徴とする光半導体装置。 - 前記セラミックス配線基板の前記実装領域にキャビティが設けられており、前記光半導体素子は前記キャビティの底部にサブマウントを介して実装され、
前記光半導体素子の電極の高さは前記素子用電極の高さと同一に設定されていることを特徴とする請求項7に記載の光半導体装置。 - 前記金属シールリングの前記開口部及び前記金属キャップは円形であり、前記金属キャップの内径が前記金属シールリングの前記リング状突出部の外径に対応していることを特徴とする請求項7又は8に記載の光半導体装置。
- 前記セラミックス配線基板部の側壁の下端から上側に凹部が設けられており、前記外部接続電極は前記凹部の内面に設けられており、
前記光半導体装置が実装基板に実装される際に、前記外部接続電極の側方に導電性接合材が設けられて前記実装基板に電気的に接続されることを特徴とする請求項7又は8に記載の光半導体装置。 - 前記光半導体素子は、面発光レーザ及び該面発光レーザから出射される光をモニタする受光素子、あるいは外部から入射される光を受ける受光素子であることを特徴とする請求項7乃至10のいずれか一項に記載の光半導体装置。
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JP2011105100A JP5756675B2 (ja) | 2011-05-10 | 2011-05-10 | 光半導体素子用パッケージ及び光半導体装置 |
US13/459,535 US9106047B2 (en) | 2011-05-10 | 2012-04-30 | Optical semiconductor element package and optical semiconductor device |
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DE102013217796A1 (de) * | 2013-09-05 | 2015-03-05 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, optoelektronische Vorrichtung und Verfahren zum Herstellen einer optoelektronischen Vorrichtung |
JP2015225974A (ja) * | 2014-05-28 | 2015-12-14 | 日立金属株式会社 | Canパッケージ半導体レーザ用治具 |
US10916912B2 (en) * | 2017-01-20 | 2021-02-09 | Mitsubishi Electric Corporation | Optical module |
JP6988493B2 (ja) * | 2018-01-11 | 2022-01-05 | 住友電気工業株式会社 | 光モジュール及びその製造方法 |
JPWO2022270429A1 (ja) * | 2021-06-21 | 2022-12-29 | ||
CN113725303B (zh) * | 2021-11-04 | 2022-02-11 | 至芯半导体(杭州)有限公司 | 斜面探测器件封装结构及其制作方法 |
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JP2682641B2 (ja) * | 1988-06-03 | 1997-11-26 | 株式会社リコー | 半導体レーザー光源装置 |
US6522673B1 (en) * | 1999-12-22 | 2003-02-18 | New Focus, Inc. | Method and apparatus for optical transmission |
US6659659B1 (en) * | 2001-04-11 | 2003-12-09 | Optical Communication Products, Inc. | High-speed optical sub-assembly utilizing ceramic substrate, direct coupling and laser welding |
JP2003163382A (ja) | 2001-11-29 | 2003-06-06 | Matsushita Electric Ind Co Ltd | 受光素子または発光素子用パッケージ |
US6920161B2 (en) | 2002-01-18 | 2005-07-19 | Oepic Semiconductors, Inc. | High-speed TO-can optoelectronic packages |
DE10341433A1 (de) * | 2003-09-09 | 2005-03-31 | Braun Gmbh | Beheizbarer Infrarot-Sensor und Infrarot-Thermometer mit einem derartigen Infrarot-Sensor |
US7223629B2 (en) * | 2003-12-11 | 2007-05-29 | Intel Corporation | Method and apparatus for manufacturing a transistor-outline (TO) can having a ceramic header |
JP2010186965A (ja) | 2009-02-13 | 2010-08-26 | Toshiba Corp | 半導体パッケージおよびその作製方法 |
CN102422193B (zh) | 2009-05-12 | 2014-10-15 | 住友电气工业株式会社 | 具有陶瓷封装的光学装置的光学组件 |
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