JP5740878B2 - 記憶素子、メモリ装置 - Google Patents

記憶素子、メモリ装置 Download PDF

Info

Publication number
JP5740878B2
JP5740878B2 JP2010205262A JP2010205262A JP5740878B2 JP 5740878 B2 JP5740878 B2 JP 5740878B2 JP 2010205262 A JP2010205262 A JP 2010205262A JP 2010205262 A JP2010205262 A JP 2010205262A JP 5740878 B2 JP5740878 B2 JP 5740878B2
Authority
JP
Japan
Prior art keywords
layer
magnetization
memory
storage
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010205262A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012064625A5 (enExample
JP2012064625A (ja
Inventor
一陽 山根
一陽 山根
細見　政功
政功 細見
大森　広之
広之 大森
別所　和宏
和宏 別所
肥後　豊
豊 肥後
裕行 内田
裕行 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010205262A priority Critical patent/JP5740878B2/ja
Priority to US13/227,144 priority patent/US8743594B2/en
Priority to US13/226,983 priority patent/US8611139B2/en
Priority to CN201110263800.9A priority patent/CN102403029B/zh
Publication of JP2012064625A publication Critical patent/JP2012064625A/ja
Priority to US14/055,386 priority patent/US9224942B2/en
Publication of JP2012064625A5 publication Critical patent/JP2012064625A5/ja
Application granted granted Critical
Publication of JP5740878B2 publication Critical patent/JP5740878B2/ja
Priority to US14/943,781 priority patent/US9324940B2/en
Priority to US15/086,568 priority patent/US9515254B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2010205262A 2010-09-14 2010-09-14 記憶素子、メモリ装置 Expired - Fee Related JP5740878B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010205262A JP5740878B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置
US13/226,983 US8611139B2 (en) 2010-09-14 2011-09-07 Memory element and memory device
CN201110263800.9A CN102403029B (zh) 2010-09-14 2011-09-07 存储元件和存储装置
US13/227,144 US8743594B2 (en) 2010-09-14 2011-09-07 Memory element and memory device
US14/055,386 US9224942B2 (en) 2010-09-14 2013-10-16 Memory element and memory device
US14/943,781 US9324940B2 (en) 2010-09-14 2015-11-17 Storage element, memory and electronic apparatus
US15/086,568 US9515254B2 (en) 2010-09-14 2016-03-31 Storage element, memory and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010205262A JP5740878B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Publications (3)

Publication Number Publication Date
JP2012064625A JP2012064625A (ja) 2012-03-29
JP2012064625A5 JP2012064625A5 (enExample) 2013-10-24
JP5740878B2 true JP5740878B2 (ja) 2015-07-01

Family

ID=45806600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010205262A Expired - Fee Related JP5740878B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置

Country Status (3)

Country Link
US (4) US8611139B2 (enExample)
JP (1) JP5740878B2 (enExample)
CN (1) CN102403029B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9450177B2 (en) 2010-03-10 2016-09-20 Tohoku University Magnetoresistive element and magnetic memory
JP5725735B2 (ja) 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012059906A (ja) * 2010-09-09 2012-03-22 Sony Corp 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
JP5209011B2 (ja) 2010-09-16 2013-06-12 株式会社東芝 磁気抵抗素子
JP2012146727A (ja) * 2011-01-07 2012-08-02 Sony Corp 記憶素子及び記憶装置
JP2012235015A (ja) * 2011-05-06 2012-11-29 Sony Corp 記憶素子及び記憶装置
JP2013048210A (ja) 2011-07-22 2013-03-07 Toshiba Corp 磁気抵抗素子
KR101831931B1 (ko) * 2011-08-10 2018-02-26 삼성전자주식회사 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
JP5836163B2 (ja) * 2012-03-08 2015-12-24 ルネサスエレクトロニクス株式会社 磁気メモリセル、磁気メモリセルの製造方法
CN104170074B (zh) * 2012-04-09 2017-04-26 国立大学法人东北大学 磁阻效应元件及磁存储器
JP6069904B2 (ja) * 2012-06-22 2017-02-01 富士通株式会社 磁気抵抗メモリ
US8786039B2 (en) * 2012-12-20 2014-07-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
JP6137744B2 (ja) * 2013-03-14 2017-05-31 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5865858B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 磁気抵抗効果素子及び磁気抵抗効果素子の製造方法
WO2014158178A1 (en) * 2013-03-28 2014-10-02 Intel Corporation High stability spintronic memory
US9105572B2 (en) * 2013-09-09 2015-08-11 Hiroyuki Kanaya Magnetic memory and manufacturing method thereof
US20160072052A1 (en) * 2014-09-09 2016-03-10 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
US9337415B1 (en) * 2015-03-20 2016-05-10 HGST Netherlands B.V. Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy
CN104733606B (zh) * 2015-04-01 2017-12-15 上海磁宇信息科技有限公司 一种具有双层优化层的磁电阻元件
US10134808B2 (en) * 2015-11-02 2018-11-20 Qualcomm Incorporated Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)
US9741926B1 (en) * 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
JPWO2017169291A1 (ja) * 2016-03-30 2019-02-07 ソニー株式会社 磁気抵抗素子、メモリ素子及び電子機器
US10586580B2 (en) 2016-06-08 2020-03-10 Tohoku University Magnetic tunnel junction element and magnetic memory
WO2018029883A1 (ja) * 2016-08-10 2018-02-15 アルプス電気株式会社 交換結合膜ならびにこれを用いた磁気抵抗効果素子および磁気検出装置
US10374147B2 (en) * 2017-12-30 2019-08-06 Spin Memory, Inc. Perpendicular magnetic tunnel junction having improved reference layer stability
KR102735914B1 (ko) 2018-03-30 2024-11-29 고쿠리츠다이가쿠호진 도호쿠다이가쿠 자기 저항 효과 소자 및 자기 메모리
WO2020026637A1 (ja) 2018-08-02 2020-02-06 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ
US12402537B2 (en) 2018-08-30 2025-08-26 Tohoku University Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element
JP7606228B2 (ja) * 2019-10-31 2024-12-25 国立大学法人東北大学 トンネル接合積層膜、磁気メモリ素子及び磁気メモリ
WO2022087768A1 (zh) * 2020-10-26 2022-05-05 华为技术有限公司 磁性隧道结、磁阻式随机存取存储器和电子器件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2002329905A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｐｐ構造磁気抵抗効果素子およびその製造方法
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
WO2003090290A1 (en) * 2002-04-22 2003-10-30 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element, magnetic head comprising it, magnetic memory, and magnetic recorder
WO2004055906A1 (ja) * 2002-12-13 2004-07-01 Japan Science And Technology Agency スピン注入デバイス及びこれを用いた磁気装置並びにこれらに用いられる磁性薄膜
US6845038B1 (en) * 2003-02-01 2005-01-18 Alla Mikhailovna Shukh Magnetic tunnel junction memory device
JP3831353B2 (ja) * 2003-03-27 2006-10-11 株式会社東芝 磁気ランダムアクセスメモリ
JP2005064050A (ja) * 2003-08-14 2005-03-10 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
US7859034B2 (en) * 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
JP2007173597A (ja) * 2005-12-22 2007-07-05 Tdk Corp 磁気メモリ
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP4970113B2 (ja) * 2007-03-30 2012-07-04 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP2008252037A (ja) * 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP4874884B2 (ja) * 2007-07-11 2012-02-15 株式会社東芝 磁気記録素子及び磁気記録装置
JP5104090B2 (ja) * 2007-07-19 2012-12-19 ソニー株式会社 記憶素子及びメモリ
JP2009081315A (ja) * 2007-09-26 2009-04-16 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2010016408A (ja) * 2009-10-19 2010-01-21 Toshiba Corp 磁気抵抗素子及び磁気メモリ
US9450177B2 (en) 2010-03-10 2016-09-20 Tohoku University Magnetoresistive element and magnetic memory

Also Published As

Publication number Publication date
US20120063221A1 (en) 2012-03-15
US8611139B2 (en) 2013-12-17
CN102403029B (zh) 2016-05-25
US9515254B2 (en) 2016-12-06
CN102403029A (zh) 2012-04-04
JP2012064625A (ja) 2012-03-29
US20160218279A1 (en) 2016-07-28
US9224942B2 (en) 2015-12-29
US9324940B2 (en) 2016-04-26
US20140042573A1 (en) 2014-02-13
US20160072053A1 (en) 2016-03-10

Similar Documents

Publication Publication Date Title
JP5740878B2 (ja) 記憶素子、メモリ装置
JP4682998B2 (ja) 記憶素子及びメモリ
CN102403027B (zh) 存储元件和存储装置
JP2012059808A (ja) 記憶素子、メモリ装置
US9196333B2 (en) Magnetic memory element and magnetic memory device
JP5786341B2 (ja) 記憶素子、メモリ装置
JP2012151213A (ja) 記憶素子、メモリ装置
JP2012151213A5 (enExample)
JP2012160681A (ja) 記憶素子、メモリ装置
JP4277870B2 (ja) 記憶素子及びメモリ
JP2012064624A (ja) 記憶素子、メモリ装置
CN102403025B (zh) 存储元件和存储装置
JP5742142B2 (ja) 記憶素子、メモリ装置
JP2007305882A (ja) 記憶素子及びメモリ
JP5724256B2 (ja) 記憶素子、メモリ装置
JP2012054439A (ja) 記憶素子及び記憶装置
JP5803079B2 (ja) 記憶素子、メモリ装置
JP5034317B2 (ja) 記憶素子及びメモリ
JP2012059809A (ja) 記憶素子、メモリ装置
JP2012059807A (ja) 記憶素子、メモリ装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130906

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130906

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141031

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150305

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150331

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150413

R151 Written notification of patent or utility model registration

Ref document number: 5740878

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees