CN102403029B - 存储元件和存储装置 - Google Patents

存储元件和存储装置 Download PDF

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Publication number
CN102403029B
CN102403029B CN201110263800.9A CN201110263800A CN102403029B CN 102403029 B CN102403029 B CN 102403029B CN 201110263800 A CN201110263800 A CN 201110263800A CN 102403029 B CN102403029 B CN 102403029B
Authority
CN
China
Prior art keywords
layer
storage
magnetization
storage layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110263800.9A
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English (en)
Chinese (zh)
Other versions
CN102403029A (zh
Inventor
山根一阳
细见政功
大森广之
别所和宏
肥后丰
内田裕行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102403029A publication Critical patent/CN102403029A/zh
Application granted granted Critical
Publication of CN102403029B publication Critical patent/CN102403029B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201110263800.9A 2010-09-14 2011-09-07 存储元件和存储装置 Expired - Fee Related CN102403029B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010205262A JP5740878B2 (ja) 2010-09-14 2010-09-14 記憶素子、メモリ装置
JP2010-205262 2010-09-14

Publications (2)

Publication Number Publication Date
CN102403029A CN102403029A (zh) 2012-04-04
CN102403029B true CN102403029B (zh) 2016-05-25

Family

ID=45806600

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110263800.9A Expired - Fee Related CN102403029B (zh) 2010-09-14 2011-09-07 存储元件和存储装置

Country Status (3)

Country Link
US (4) US8611139B2 (enExample)
JP (1) JP5740878B2 (enExample)
CN (1) CN102403029B (enExample)

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JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012059906A (ja) * 2010-09-09 2012-03-22 Sony Corp 記憶素子、メモリ装置
JP2012064623A (ja) * 2010-09-14 2012-03-29 Sony Corp 記憶素子、メモリ装置
JP5209011B2 (ja) 2010-09-16 2013-06-12 株式会社東芝 磁気抵抗素子
JP2012146727A (ja) * 2011-01-07 2012-08-02 Sony Corp 記憶素子及び記憶装置
JP2012235015A (ja) * 2011-05-06 2012-11-29 Sony Corp 記憶素子及び記憶装置
JP2013048210A (ja) 2011-07-22 2013-03-07 Toshiba Corp 磁気抵抗素子
KR101831931B1 (ko) * 2011-08-10 2018-02-26 삼성전자주식회사 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
JP5836163B2 (ja) * 2012-03-08 2015-12-24 ルネサスエレクトロニクス株式会社 磁気メモリセル、磁気メモリセルの製造方法
CN104170074B (zh) * 2012-04-09 2017-04-26 国立大学法人东北大学 磁阻效应元件及磁存储器
JP6069904B2 (ja) * 2012-06-22 2017-02-01 富士通株式会社 磁気抵抗メモリ
US8786039B2 (en) * 2012-12-20 2014-07-22 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
JP6137744B2 (ja) * 2013-03-14 2017-05-31 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5865858B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 磁気抵抗効果素子及び磁気抵抗効果素子の製造方法
WO2014158178A1 (en) * 2013-03-28 2014-10-02 Intel Corporation High stability spintronic memory
US9105572B2 (en) * 2013-09-09 2015-08-11 Hiroyuki Kanaya Magnetic memory and manufacturing method thereof
US20160072052A1 (en) * 2014-09-09 2016-03-10 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
US9337415B1 (en) * 2015-03-20 2016-05-10 HGST Netherlands B.V. Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy
CN104733606B (zh) * 2015-04-01 2017-12-15 上海磁宇信息科技有限公司 一种具有双层优化层的磁电阻元件
US10134808B2 (en) * 2015-11-02 2018-11-20 Qualcomm Incorporated Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)
US9741926B1 (en) * 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
JPWO2017169291A1 (ja) * 2016-03-30 2019-02-07 ソニー株式会社 磁気抵抗素子、メモリ素子及び電子機器
US10586580B2 (en) 2016-06-08 2020-03-10 Tohoku University Magnetic tunnel junction element and magnetic memory
WO2018029883A1 (ja) * 2016-08-10 2018-02-15 アルプス電気株式会社 交換結合膜ならびにこれを用いた磁気抵抗効果素子および磁気検出装置
US10374147B2 (en) * 2017-12-30 2019-08-06 Spin Memory, Inc. Perpendicular magnetic tunnel junction having improved reference layer stability
KR102735914B1 (ko) 2018-03-30 2024-11-29 고쿠리츠다이가쿠호진 도호쿠다이가쿠 자기 저항 효과 소자 및 자기 메모리
WO2020026637A1 (ja) 2018-08-02 2020-02-06 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ
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JP7606228B2 (ja) * 2019-10-31 2024-12-25 国立大学法人東北大学 トンネル接合積層膜、磁気メモリ素子及び磁気メモリ
WO2022087768A1 (zh) * 2020-10-26 2022-05-05 华为技术有限公司 磁性隧道结、磁阻式随机存取存储器和电子器件

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Also Published As

Publication number Publication date
US20120063221A1 (en) 2012-03-15
US8611139B2 (en) 2013-12-17
JP5740878B2 (ja) 2015-07-01
US9515254B2 (en) 2016-12-06
CN102403029A (zh) 2012-04-04
JP2012064625A (ja) 2012-03-29
US20160218279A1 (en) 2016-07-28
US9224942B2 (en) 2015-12-29
US9324940B2 (en) 2016-04-26
US20140042573A1 (en) 2014-02-13
US20160072053A1 (en) 2016-03-10

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Granted publication date: 20160525