JP5737956B2 - テラヘルツ波素子 - Google Patents

テラヘルツ波素子 Download PDF

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Publication number
JP5737956B2
JP5737956B2 JP2011002585A JP2011002585A JP5737956B2 JP 5737956 B2 JP5737956 B2 JP 5737956B2 JP 2011002585 A JP2011002585 A JP 2011002585A JP 2011002585 A JP2011002585 A JP 2011002585A JP 5737956 B2 JP5737956 B2 JP 5737956B2
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Japan
Prior art keywords
terahertz wave
excitation light
layer
electrode
schottky junction
Prior art date
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Expired - Fee Related
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JP2011002585A
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English (en)
Japanese (ja)
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JP2012146758A (ja
JP2012146758A5 (enExample
Inventor
康介 加治木
康介 加治木
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Canon Inc
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Canon Inc
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Priority to JP2011002585A priority Critical patent/JP5737956B2/ja
Publication of JP2012146758A publication Critical patent/JP2012146758A/ja
Publication of JP2012146758A5 publication Critical patent/JP2012146758A5/ja
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Publication of JP5737956B2 publication Critical patent/JP5737956B2/ja
Expired - Fee Related legal-status Critical Current
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  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2011002585A 2011-01-08 2011-01-08 テラヘルツ波素子 Expired - Fee Related JP5737956B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011002585A JP5737956B2 (ja) 2011-01-08 2011-01-08 テラヘルツ波素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011002585A JP5737956B2 (ja) 2011-01-08 2011-01-08 テラヘルツ波素子

Publications (3)

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JP2012146758A JP2012146758A (ja) 2012-08-02
JP2012146758A5 JP2012146758A5 (enExample) 2014-02-20
JP5737956B2 true JP5737956B2 (ja) 2015-06-17

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JP2011002585A Expired - Fee Related JP5737956B2 (ja) 2011-01-08 2011-01-08 テラヘルツ波素子

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JP (1) JP5737956B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101700779B1 (ko) * 2012-09-21 2017-01-31 한국전자통신연구원 포토믹서 및 그의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243510B2 (ja) * 1999-11-22 2002-01-07 独立行政法人産業技術総合研究所 電界効果テラヘルツ電磁波発生素子
GB2392782B (en) * 2002-09-04 2005-07-13 Teraview Ltd An Antenna
JP4785392B2 (ja) * 2004-03-26 2011-10-05 キヤノン株式会社 テラヘルツ電磁波の発生素子の製造方法
JP2007281223A (ja) * 2006-04-07 2007-10-25 Matsushita Electric Ind Co Ltd 電磁波発生装置
JP2010050287A (ja) * 2008-08-21 2010-03-04 Canon Inc 光伝導素子
JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
JP2010283176A (ja) * 2009-06-05 2010-12-16 Canon Inc 光伝導素子、それを用いたテラヘルツ波発生装置及び検出装置

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JP2012146758A (ja) 2012-08-02

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