JP5730759B2 - 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード - Google Patents
三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード Download PDFInfo
- Publication number
- JP5730759B2 JP5730759B2 JP2011513645A JP2011513645A JP5730759B2 JP 5730759 B2 JP5730759 B2 JP 5730759B2 JP 2011513645 A JP2011513645 A JP 2011513645A JP 2011513645 A JP2011513645 A JP 2011513645A JP 5730759 B2 JP5730759 B2 JP 5730759B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- array
- diode
- polymer
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims description 167
- 239000004065 semiconductor Substances 0.000 claims description 95
- 239000004020 conductor Substances 0.000 claims description 74
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 69
- 229910052799 carbon Inorganic materials 0.000 claims description 42
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 29
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 description 84
- 238000005245 sintering Methods 0.000 description 83
- 238000000059 patterning Methods 0.000 description 76
- 230000008569 process Effects 0.000 description 76
- 229920000642 polymer Polymers 0.000 description 74
- 239000010410 layer Substances 0.000 description 72
- 239000000843 powder Substances 0.000 description 71
- 238000010438 heat treatment Methods 0.000 description 53
- 238000006243 chemical reaction Methods 0.000 description 38
- 238000000197 pyrolysis Methods 0.000 description 35
- 229920001940 conductive polymer Polymers 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 229910002804 graphite Inorganic materials 0.000 description 23
- 239000010439 graphite Substances 0.000 description 23
- 238000002490 spark plasma sintering Methods 0.000 description 22
- 229910003460 diamond Inorganic materials 0.000 description 18
- 239000010432 diamond Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- 229910021397 glassy carbon Inorganic materials 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910021387 carbon allotrope Inorganic materials 0.000 description 14
- 230000005670 electromagnetic radiation Effects 0.000 description 14
- 229920000620 organic polymer Polymers 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000000560 biocompatible material Substances 0.000 description 12
- 239000002131 composite material Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000005300 metallic glass Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 229910052755 nonmetal Inorganic materials 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- -1 sheet Substances 0.000 description 10
- 238000001125 extrusion Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 238000005096 rolling process Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- 239000004033 plastic Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000571 coke Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000862 absorption spectrum Methods 0.000 description 5
- 238000002144 chemical decomposition reaction Methods 0.000 description 5
- 238000007641 inkjet printing Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 229910021400 carbon nanofoam Inorganic materials 0.000 description 4
- 239000008209 carbon nanofoam Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000011858 nanopowder Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002887 superconductor Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004128 high performance liquid chromatography Methods 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002959 polymer blend Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 241000239290 Araneae Species 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- NPURPEXKKDAKIH-UHFFFAOYSA-N iodoimino(oxo)methane Chemical compound IN=C=O NPURPEXKKDAKIH-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000013087 polymer photovoltaic Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5999508P | 2008-06-09 | 2008-06-09 | |
| US61/059,995 | 2008-06-09 | ||
| PCT/US2009/046803 WO2010033281A2 (en) | 2008-06-09 | 2009-06-09 | Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014010474A Division JP5889929B2 (ja) | 2008-06-09 | 2014-01-23 | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011523232A JP2011523232A (ja) | 2011-08-04 |
| JP2011523232A5 JP2011523232A5 (enExample) | 2014-03-13 |
| JP5730759B2 true JP5730759B2 (ja) | 2015-06-10 |
Family
ID=42040067
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011513645A Active JP5730759B2 (ja) | 2008-06-09 | 2009-06-09 | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード |
| JP2014010474A Active JP5889929B2 (ja) | 2008-06-09 | 2014-01-23 | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード |
| JP2015235734A Active JP6430921B2 (ja) | 2008-06-09 | 2015-12-02 | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014010474A Active JP5889929B2 (ja) | 2008-06-09 | 2014-01-23 | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード |
| JP2015235734A Active JP6430921B2 (ja) | 2008-06-09 | 2015-12-02 | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8629462B2 (enExample) |
| EP (2) | EP3716342A1 (enExample) |
| JP (3) | JP5730759B2 (enExample) |
| KR (1) | KR101633138B1 (enExample) |
| CN (1) | CN102292823B (enExample) |
| WO (1) | WO2010033281A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9984787B2 (en) | 2009-11-11 | 2018-05-29 | Samsung Electronics Co., Ltd. | Conductive paste and solar cell |
| US9266178B2 (en) | 2010-01-07 | 2016-02-23 | Black & Decker Inc. | Power tool having rotary input control |
| US8418778B2 (en) | 2010-01-07 | 2013-04-16 | Black & Decker Inc. | Power screwdriver having rotary input control |
| US9475180B2 (en) | 2010-01-07 | 2016-10-25 | Black & Decker Inc. | Power tool having rotary input control |
| KR101036213B1 (ko) * | 2010-01-26 | 2011-05-20 | 광주과학기술원 | 발광소자와 태양전지 성능을 포함하는 전자소자 |
| US8613898B2 (en) * | 2010-01-28 | 2013-12-24 | University Of Central Florida Research Foundation, Inc. | Supramolecular structures comprising at least partially conjugated polymers attached to carbon nanotubes or graphenes |
| US8790610B2 (en) | 2010-01-28 | 2014-07-29 | University Of Central Florida Research Foundation, Inc. | Method of forming composite materials including conjugated materials attached to carbon nanotubes or graphenes |
| KR101741683B1 (ko) | 2010-08-05 | 2017-05-31 | 삼성전자주식회사 | 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
| US8668847B2 (en) * | 2010-08-13 | 2014-03-11 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
| US8987586B2 (en) | 2010-08-13 | 2015-03-24 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
| EP2448003A3 (en) | 2010-10-27 | 2012-08-08 | Samsung Electronics Co., Ltd. | Conductive paste comprising a conductive powder and a metallic glass for forming a solar cell electrode |
| US9105370B2 (en) | 2011-01-12 | 2015-08-11 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
| US8940195B2 (en) | 2011-01-13 | 2015-01-27 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
| US9293553B2 (en) * | 2011-03-10 | 2016-03-22 | The Trustees Of Columbia University In The City Of New York | Graphene electrodes for electronic devices |
| CN102542926B (zh) * | 2011-12-23 | 2013-11-06 | 彩虹集团公司 | 有机光伏电致发光联用的显示器件及其制备方法 |
| EP2631035B1 (en) | 2012-02-24 | 2019-10-16 | Black & Decker Inc. | Power tool |
| CN103487467B (zh) * | 2013-09-06 | 2016-03-02 | 华中科技大学 | 一种集成加热部件的微型气敏传感器的制作工艺 |
| KR101441607B1 (ko) * | 2014-02-13 | 2014-09-24 | 인천대학교 산학협력단 | 고효율 광전소자 및 그 제조방법 |
| CN104681710A (zh) * | 2015-02-13 | 2015-06-03 | 中国科学院物理研究所 | 一种电磁转换器件 |
| CN105977387A (zh) * | 2016-07-11 | 2016-09-28 | 无锡市宝来电池有限公司 | 一种太阳能电池 |
| KR102614576B1 (ko) * | 2018-03-06 | 2023-12-15 | 주식회사 엘지화학 | 유기 태양 전지의 제조방법 및 이를 이용하여 제조된 유기 태양 전지 |
| KR102176740B1 (ko) * | 2019-05-17 | 2020-11-09 | 연세대학교 산학협력단 | 스트레처블 전자 소자 및 스트레처블 전자 소자의 제조 방법 |
| CN115513377B (zh) * | 2021-06-07 | 2025-03-21 | 中国科学院理化技术研究所 | 一种透明有机异质结阵列及其制备方法和应用 |
| KR102675088B1 (ko) * | 2022-06-13 | 2024-06-13 | 고려대학교 세종산학협력단 | 광전소자용 화합물, 그 제조 방법 및 이를 구비하는 광전소자 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59198781A (ja) | 1983-04-25 | 1984-11-10 | Agency Of Ind Science & Technol | 光電変換素子 |
| US5082791A (en) * | 1988-05-13 | 1992-01-21 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| US5053083A (en) | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| US5120421A (en) * | 1990-08-31 | 1992-06-09 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical sensor/detector system and method |
| JPH11354279A (ja) * | 1998-06-09 | 1999-12-24 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス素子 |
| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| US6335479B1 (en) | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
| JP2000188181A (ja) * | 1998-12-22 | 2000-07-04 | Canon Inc | 発光装置、露光装置及び画像形成装置 |
| JP2002313586A (ja) * | 2001-04-10 | 2002-10-25 | Matsushita Electric Ind Co Ltd | 有機電界発光素子 |
| DE10231140A1 (de) | 2002-07-10 | 2004-01-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optoelektronisches Bauelement mit elektrisch leitfähigem organischem Material sowie Verfahren zur Herstellung des Bauelementes |
| AU2003287659A1 (en) | 2002-11-14 | 2004-06-15 | Sam-Shajing Sun | Photovoltaic devices based on a novel block copolymer |
| US7569158B2 (en) | 2004-10-13 | 2009-08-04 | Air Products And Chemicals, Inc. | Aqueous dispersions of polythienothiophenes with fluorinated ion exchange polymers as dopants |
| US20060112983A1 (en) | 2004-11-17 | 2006-06-01 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
| AU2006297870B2 (en) * | 2005-03-01 | 2009-04-30 | Georgia Tech Research Corporation | Three dimensional multi-junction photovoltaic device |
| US7825326B2 (en) | 2005-03-21 | 2010-11-02 | Konarka Technologies, Inc. | Polymer photovoltaic cell |
| US7655860B2 (en) | 2005-04-01 | 2010-02-02 | North Carolina State University | Nano-structured photovoltaic solar cell and related methods |
| JP4693505B2 (ja) * | 2005-06-01 | 2011-06-01 | 京セラ株式会社 | 光電変換装置およびそれを用いた光発電装置 |
| JP2007027625A (ja) * | 2005-07-21 | 2007-02-01 | Matsushita Electric Works Ltd | 有機太陽電池及びその製造方法 |
| US7635600B2 (en) | 2005-11-16 | 2009-12-22 | Sharp Laboratories Of America, Inc. | Photovoltaic structure with a conductive nanowire array electrode |
| US8816191B2 (en) | 2005-11-29 | 2014-08-26 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
| US20070119496A1 (en) | 2005-11-30 | 2007-05-31 | Massachusetts Institute Of Technology | Photovoltaic cell |
| US20070138637A1 (en) | 2005-12-19 | 2007-06-21 | Shiva Prakash | Electronic device having low background luminescence, a black layer, or any combination thereof |
| KR101074779B1 (ko) | 2005-12-29 | 2011-10-19 | 삼성에스디아이 주식회사 | 탄소나노튜브를 이용하는 반도체 전극, 그의 제조방법 및그를 포함하는 태양전지 |
| WO2007127870A2 (en) * | 2006-04-26 | 2007-11-08 | The Regents Of The University Of California | Organic light emitting diodes with structured electrodes |
| US7393699B2 (en) | 2006-06-12 | 2008-07-01 | Tran Bao Q | NANO-electronics |
| US20080023066A1 (en) | 2006-07-28 | 2008-01-31 | Unidym, Inc. | Transparent electrodes formed of metal electrode grids and nanostructure networks |
| WO2010144487A2 (en) | 2009-06-09 | 2010-12-16 | Sdsu Research Foundation | Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes |
-
2009
- 2009-06-09 KR KR1020117000483A patent/KR101633138B1/ko active Active
- 2009-06-09 US US12/997,241 patent/US8629462B2/en active Active
- 2009-06-09 JP JP2011513645A patent/JP5730759B2/ja active Active
- 2009-06-09 EP EP20173006.6A patent/EP3716342A1/en not_active Withdrawn
- 2009-06-09 CN CN200980130706.7A patent/CN102292823B/zh active Active
- 2009-06-09 EP EP09814930A patent/EP2342756A4/en not_active Ceased
- 2009-06-09 WO PCT/US2009/046803 patent/WO2010033281A2/en not_active Ceased
-
2012
- 2012-09-26 US US13/627,077 patent/US9041018B1/en active Active
-
2014
- 2014-01-23 JP JP2014010474A patent/JP5889929B2/ja active Active
-
2015
- 2015-12-02 JP JP2015235734A patent/JP6430921B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9041018B1 (en) | 2015-05-26 |
| CN102292823B (zh) | 2016-05-25 |
| JP2011523232A (ja) | 2011-08-04 |
| WO2010033281A2 (en) | 2010-03-25 |
| WO2010033281A3 (en) | 2010-07-01 |
| EP2342756A4 (en) | 2012-10-17 |
| EP2342756A2 (en) | 2011-07-13 |
| JP6430921B2 (ja) | 2018-11-28 |
| JP2016054315A (ja) | 2016-04-14 |
| KR101633138B1 (ko) | 2016-06-23 |
| US20150122304A1 (en) | 2015-05-07 |
| US20110162687A1 (en) | 2011-07-07 |
| US8629462B2 (en) | 2014-01-14 |
| JP2014140036A (ja) | 2014-07-31 |
| KR20110038027A (ko) | 2011-04-13 |
| JP5889929B2 (ja) | 2016-03-22 |
| EP3716342A1 (en) | 2020-09-30 |
| CN102292823A (zh) | 2011-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5730759B2 (ja) | 三次元加工電極のアレイ構造を有する有機太陽電池および発光ダイオード | |
| JP2011523232A5 (enExample) | ||
| Mao et al. | Flexible silver grid/PEDOT: PSS hybrid electrodes for large area inverted polymer solar cells | |
| Ding et al. | Metal nanowire-based transparent electrode for flexible and stretchable optoelectronic devices | |
| Kymakis et al. | High open-circuit voltage photovoltaic devices from carbon-nanotube-polymer composites | |
| Peng et al. | Perovskite solar cells based on bottom-fused TiO 2 nanocones | |
| Pan et al. | An efficiency of 14.29% and 13.08% for 1 cm 2 and 4 cm 2 flexible organic solar cells enabled by sol–gel ZnO and ZnO nanoparticle bilayer electron transporting layers | |
| WO2010144487A2 (en) | Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes | |
| EP1964144A4 (en) | PHOTOVOLTAIC TANDEM CELLS | |
| Ghaffari et al. | Lamination methods for the fabrication of perovskite and organic photovoltaics | |
| KR101251718B1 (ko) | 유기 태양전지용 정공수송층 조성물, 이를 이용한 유기 태양전지의 제조방법 및 그에 따라 제조된 유기 태양전지 | |
| KR101085101B1 (ko) | 유기태양전지의 ｐ형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지 | |
| KR102248780B1 (ko) | 산화니켈-탄소나노튜브 나노복합체를 포함하는 태양전지용 정공수송층 조성물 및 이를 포함하는 태양전지 | |
| JP6530781B2 (ja) | 有機薄膜太陽電池の製造方法及び製造装置 | |
| Lu et al. | Transferable 3C-SiC nanowire network film for high performance flexible UV photodetectors with a simple, low cost and large scale production | |
| JP6768986B2 (ja) | ドープ半導体材料の複数の粒を含む光吸収層を有する光起電力装置 | |
| Naikaew et al. | Solvent‐Tailored Carbon Paste for Effective Carbon‐Based Perovskite Solar Cells | |
| WO2012066386A1 (en) | A photovoltaic device and method for the production of a photovoltaic device | |
| JP2018505562A (ja) | 太陽光発電糸および製造方法 | |
| KR20100098897A (ko) | 염료감응 태양전지용 액상 탄소나노선재를 이용한 태양전지의 상대전극, 이를 포함하는 태양전지와 그 제조방법 | |
| Ichwani | New Frontiers for Perovskite Solar Cells: From Adhesion to Interfacial Fracture and Processing Effects on Device Performances | |
| Sung et al. | Nanospacer‐Supported Carbon Nanotube Hybrid Electrode for Efficient and Stable Carbon‐Based Perovskite Solar Cells | |
| Gu et al. | Nickel-coated polystyrene microsphere electrodes boost power output of silicon nanowire hydrovoltaic devices | |
| Zhang et al. | Carbon nanotube networks as efficient transparent electrode for polymer/silicon hybrid solar cells | |
| Nair | High-Efficiency and Stable Carbon-Based Planar Perovskite Solar Cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110519 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120329 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120329 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130328 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130821 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130827 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131126 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131203 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131225 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140108 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20140122 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140123 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140122 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20140123 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140507 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140723 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140902 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150105 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150114 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150317 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150408 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5730759 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |