JP5725501B2 - 検査装置 - Google Patents
検査装置 Download PDFInfo
- Publication number
- JP5725501B2 JP5725501B2 JP2011035751A JP2011035751A JP5725501B2 JP 5725501 B2 JP5725501 B2 JP 5725501B2 JP 2011035751 A JP2011035751 A JP 2011035751A JP 2011035751 A JP2011035751 A JP 2011035751A JP 5725501 B2 JP5725501 B2 JP 5725501B2
- Authority
- JP
- Japan
- Prior art keywords
- defect
- image
- defects
- silicon carbide
- differential interference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007689 inspection Methods 0.000 title claims description 68
- 230000007547 defect Effects 0.000 claims description 557
- 239000000758 substrate Substances 0.000 claims description 193
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 152
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 152
- 230000003287 optical effect Effects 0.000 claims description 65
- 238000001514 detection method Methods 0.000 claims description 36
- 238000012545 processing Methods 0.000 claims description 34
- 238000005286 illumination Methods 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 21
- 244000000626 Daucus carota Species 0.000 claims description 14
- 235000002767 Daucus carota Nutrition 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 34
- 238000009826 distribution Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000003908 quality control method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000004854 X-ray topography Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- 241001272720 Medialuna californiensis Species 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011035751A JP5725501B2 (ja) | 2011-02-22 | 2011-02-22 | 検査装置 |
US13/073,130 US20110242312A1 (en) | 2010-03-30 | 2011-03-28 | Inspection system and inspection method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011035751A JP5725501B2 (ja) | 2011-02-22 | 2011-02-22 | 検査装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012106055A Division JP5114808B2 (ja) | 2012-05-07 | 2012-05-07 | 検査装置及び欠陥検査方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012174896A JP2012174896A (ja) | 2012-09-10 |
JP2012174896A5 JP2012174896A5 (enrdf_load_stackoverflow) | 2014-03-27 |
JP5725501B2 true JP5725501B2 (ja) | 2015-05-27 |
Family
ID=46977518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011035751A Active JP5725501B2 (ja) | 2010-03-30 | 2011-02-22 | 検査装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5725501B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10429315B2 (en) | 2017-07-18 | 2019-10-01 | Samsung Electronics Co., Ltd. | Imaging apparatus and imaging method |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9551672B2 (en) | 2013-12-18 | 2017-01-24 | Lasertec Corporation | Defect classifying method and optical inspection apparatus for silicon carbide substrate |
CN115791634A (zh) * | 2015-11-05 | 2023-03-14 | 米朋克斯株式会社 | 基板评价方法 |
CN108169228A (zh) * | 2017-11-28 | 2018-06-15 | 中国工程物理研究院电子工程研究所 | 一种准确辨别碳化硅单晶位错类型的方法 |
US11017520B2 (en) * | 2018-09-04 | 2021-05-25 | Kla Corporation | Multi-wavelength interferometry for defect classification |
JP7056515B2 (ja) * | 2018-10-30 | 2022-04-19 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP6914990B2 (ja) * | 2019-05-09 | 2021-08-04 | アンリツ株式会社 | 物品検査装置及び物品検査方法 |
JP2022069005A (ja) * | 2020-10-23 | 2022-05-11 | レーザーテック株式会社 | 測定装置、及び測定方法 |
CN112446857A (zh) * | 2020-11-06 | 2021-03-05 | 长江存储科技有限责任公司 | 缺陷图像自动分类标记系统、建立方法及分类标记方法 |
JP7669772B2 (ja) * | 2021-04-15 | 2025-04-30 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
CN114280009A (zh) * | 2021-12-31 | 2022-04-05 | 北京天科合达半导体股份有限公司 | 一种碳化硅晶片的综合缺陷检测装置及方法 |
JP2024177762A (ja) * | 2023-06-12 | 2024-12-24 | 浜松ホトニクス株式会社 | 干渉観察装置及び干渉観察方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6514779B1 (en) * | 2001-10-17 | 2003-02-04 | Cree, Inc. | Large area silicon carbide devices and manufacturing methods therefor |
JP4357355B2 (ja) * | 2004-05-07 | 2009-11-04 | 株式会社日立ハイテクノロジーズ | パターン検査方法及びその装置 |
US7554656B2 (en) * | 2005-10-06 | 2009-06-30 | Kla-Tencor Technologies Corp. | Methods and systems for inspection of a wafer |
-
2011
- 2011-02-22 JP JP2011035751A patent/JP5725501B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10429315B2 (en) | 2017-07-18 | 2019-10-01 | Samsung Electronics Co., Ltd. | Imaging apparatus and imaging method |
Also Published As
Publication number | Publication date |
---|---|
JP2012174896A (ja) | 2012-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5725501B2 (ja) | 検査装置 | |
JP4716148B1 (ja) | 検査装置並びに欠陥分類方法及び欠陥検出方法 | |
US20110242312A1 (en) | Inspection system and inspection method | |
JP5633099B1 (ja) | 欠陥分類方法及び検査装置 | |
KR102235580B1 (ko) | 반도체 웨이퍼 검사를 위한 결함 마킹 | |
JP5171744B2 (ja) | 欠陥検査方法およびその装置 | |
JP4988224B2 (ja) | 欠陥検査方法及びその装置 | |
JP4500641B2 (ja) | 欠陥検査方法およびその装置 | |
JP2014137229A (ja) | 検査装置及び欠陥検査方法 | |
US8670116B2 (en) | Method and device for inspecting for defects | |
JP2013217703A (ja) | 検査装置 | |
JP5419293B2 (ja) | 検査装置 | |
JP2012518798A (ja) | 半導体ウエハ検査装置および方法 | |
KR101445463B1 (ko) | 결함 검사 방법 및 그 장치 | |
JP4674382B1 (ja) | 検査装置及び欠陥検査方法 | |
JP2018120211A (ja) | フォトマスクブランクの欠陥検査方法、選別方法及び製造方法 | |
JP5114808B2 (ja) | 検査装置及び欠陥検査方法 | |
JP5713419B1 (ja) | 欠陥分類方法及び検査装置 | |
JP3904581B2 (ja) | 欠陥検査装置およびその方法 | |
JP4320132B2 (ja) | 欠陥観察方法及び欠陥観察装置 | |
JP3981696B2 (ja) | 欠陥検査装置およびその方法 | |
JP4844694B2 (ja) | 検査装置及び欠陥分類方法 | |
JP3904565B2 (ja) | 欠陥検査装置およびその方法 | |
JP5278783B1 (ja) | 欠陥検査装置、欠陥検査方法、及び欠陥検査プログラム | |
JP5046054B2 (ja) | 欠陥検査装置、欠陥検査方法、光学式走査装置、半導体デバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140210 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140806 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140812 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140909 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150325 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5725501 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |