JP5721827B2 - 真空コーティング装置および真空コーティング方法 - Google Patents
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- 238000001771 vacuum deposition Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 139
- 238000012545 processing Methods 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
2 装置
10 蒸発器ベンチ
10a 蒸発器エレメント
10b 支持エレメント
10c 支持エレメント
21 基板支持装置
22 基板支持装置
31 処理源
31a 電極
31b 対向電極
32 処理源
32a 電極
32b 対向電極
40 長手方向軸線
41 基板支持装置の長手方向軸線
42 基板支持装置の長手方向軸線
110 蒸発器ベンチ
110a 蒸発器ベンチ
121 基板保持装置
121a 基板保持装置
122 基板保持装置
122a 基板保持装置
130 電極
130’ 電極
131 対向電極
131a 対向電極
132 対向電極
132a 対向電極
150 接続部
160 制御手段
170 制御手段
175 真空チャンバ
175a 第1の部分チャンバ
180 第2の部分チャンバ
180a 別の部分チャンバ
181 旋回軸線
185 壁部
185a 壁部
210a 蒸発器エレメント
210b 支持エレメント
210c 支持エレメント
211a 蒸発器保持体
211b 蒸発器保持体
221 基板支持装置
222 基板支持装置
223 基板支持装置
224 基板支持装置
241 基板支持装置の長手方向軸線
242 基板支持装置の長手方向軸線
243 基板支持装置の長手方向軸線
244 基板支持装置の長手方向軸線
250 水平方向に延びる縦延長線
Claims (12)
- 鉛直方向に延びる長手方向軸線(40)に沿って配置された複数の蒸発器エレメント(10a,210a)を有する長く延びる蒸発器ベンチ(10,110,110a)と、
該蒸発器ベンチ(10,110,110a)に対応配置された第1の基板支持装置(21,121,221)と
を備える、基板を真空チャンバ(175)内で真空コーティングする装置であって、
前記第1の基板支持装置(21,121,221)は、基板用の保持手段を有する、第1の回転軸線(41,241)を中心として回転可能な第1の円柱状のフレーム構造体を備え、
長手方向軸線(40)と、第1の回転軸線(41,241)との間に、10°よりも小さな角度のずれがある、基板を真空チャンバ(175)内で真空コーティングする装置において、
前記蒸発器ベンチ(10,110,110a)に対応配置された少なくとも1つの第2の基板支持装置(22,122,222)が設けられており、該第2の基板支持装置(22,122,222)は、基板用の保持手段を有する、第2の回転軸線(42,242)を中心として回転可能な第2の円柱状のフレーム構造体を備え、
前記第1および第2の円柱状のフレーム構造体の軸線が、前記蒸発器ベンチ(10,110,110a)の前記長手方向軸線(40)に対して相対的に固定的に形成されており、
前記蒸発器ベンチ(10,110,110a)は、該蒸発器ベンチ(10,110,110a)の長手方向軸線を中心とした回転をせず、かつ基板支持装置(21,121,221,22,122,222)は、前記蒸発器ベンチ(10,110,110a)を中心とした回転をせず、
長手方向軸線(40)と第2の回転軸線(42,242)との間に、10°よりも小さな角度のずれがある
ことを特徴とする、基板を真空チャンバ内で真空コーティングする装置。 - 前記蒸発器ベンチ(10)は、少なくとも1つの蒸発器エレメント(10a,110,110a)を有しており、該蒸発器エレメント(10a,110,110a)は、水平方向の縦延長線(250)と、該縦延長線(250)および前記長手方向軸線(40)により展開された平面に対して鏡像対称的な放射特性とを有している、請求項1記載の装置。
- 前記第1の基板支持装置(21,121,221)に、または場合によっては別の基板支持装置(22,122,222,223,224)に対応配置された少なくとも1つの処理源(31,32)が設けられている、請求項1または2記載の装置。
- 前記真空チャンバ(175)は、
該真空チャンバ(175)の壁部(185)の開口を備えた第1の部分チャンバ(175a)と、
前記開口を真空密に閉鎖可能な、前記第1の部分チャンバにドア状に対応配置された少なくとも1つの第2の部分チャンバ(180,180a)とを有し、
前記蒸発器ベンチ(110)と、第1の基板支持装置(121)および少なくとも第2の基板支持装置(122)と、前記1つまたは複数の処理源(31,32)とが、少なくとも第2の部分チャンバ内に収容可能であるか、または収容されている、請求項1から3までのいずれか1項記載の装置。 - 前記第2の部分チャンバ(180)は、旋回装置によって、またはスライド装置によって、前記第1の部分チャンバ(175a)に対して相対的に位置決め可能である、請求項4記載の装置。
- 前記真空チャンバ(175)は、第2の部分チャンバ(180)と同様に形成され、前記第1の部分チャンバにドア状に対応配置された別の部分チャンバ(180a)を有しており、該別の部分チャンバ(180a)により、前記第1の部分チャンバ(175a)の前記開口は真空密に閉鎖可能である、請求項4または5のいずれか1項記載の装置。
- 少なくとも1つの処理源(31,32)は、少なくとも1つの電極対(31a/b,32a/b,130/131,130/131a,130’/132,130’/132a)を備えたプラズマ源として、有利には少なくとも1つのプレート状の電極を含んで、形成されている、請求項4から6までのいずれか1項記載の装置。
- 少なくとも1つの電極対の少なくとも1つの電極(130,130’)は、前記第1の部分チャンバ内に配置されていて、前記少なくとも1つの電極対の対応配置された少なくとも1つの対向電極(131,131a,132,132a)は、前記第2の部分チャンバ(180,180a)内に配置されていて、前記対向電極(131,131a,132,132a)は、前記第2の部分チャンバ(180,180a)と共に、第1の部分チャンバ(175a)に対して相対的に位置決め可能である、請求項7記載の装置。
- 蒸発器ベンチ(10)ならびに場合によっては処理源(31,32)の寸法設計は、空間的な端部効果を補償するために、蒸発器ベンチ(10)ならびに場合によっては処理源(31,32)が、前記基板支持装置(21,22)の端部領域を超える突出部を有するようになっている、請求項3から8までのいずれか1項記載の装置。
- 前記蒸発器エレメント(10a)の互いに対する間隔は、蒸発器ベンチ(10,110,110a)または基板支持装置(21,22)の端部領域におけるコーティング速度の低下を補償するように、調節可能である、請求項1から9までのいずれか1項記載の装置。
- 真空コーティングを、請求項1から10までのいずれか1項記載の装置を用いて行うことを特徴とする、基板を真空コーティングする方法。
- 前記蒸発器ベンチ(10,110,110a)を用いて、アルミニウム、銅、錫、クロム、チタン、タンタル、金、銀、ロジウム、パラジウムまたはニッケルから成る群より選択される少なくとも1種から成る金属製の材料の熱蒸発を行う、請求項11記載の方法。
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DE102010032152 | 2010-07-23 | ||
DE102010032152.4 | 2010-07-23 | ||
DE102010032591A DE102010032591A1 (de) | 2010-07-23 | 2010-07-28 | Vorrichtung und Verfahren zur Vakuumbeschichtung |
DE102010032591.0 | 2010-07-28 | ||
PCT/EP2011/003679 WO2012010318A1 (de) | 2010-07-23 | 2011-07-22 | Vorrichtung und verfahren zur vakuumbeschichtung |
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EP (1) | EP2596145B1 (ja) |
JP (1) | JP5721827B2 (ja) |
KR (2) | KR101918875B1 (ja) |
CN (1) | CN103119193B (ja) |
DE (2) | DE102010032591A1 (ja) |
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WO2015067665A1 (de) | 2013-11-06 | 2015-05-14 | Leybold Optics Gmbh | Vorrichtung zur vakuumbehandlung von substraten in einer vakuumbeschichtungsanlage und vakuumbeschichtungsanlage mit einer vorrichtung |
WO2017077106A1 (de) | 2015-11-05 | 2017-05-11 | Bühler Alzenau Gmbh | Vorrichtung und verfahren zur vakuumbeschichtung |
CN107287562B (zh) * | 2016-03-31 | 2019-08-02 | 东莞酷派软件技术有限公司 | 蒸镀装置及蒸镀方法 |
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EP1947211A1 (en) | 2006-12-05 | 2008-07-23 | Galileo Vacuum Systems S.p.A. | Vacuum metallization device |
DE102006058078A1 (de) | 2006-12-07 | 2008-06-19 | Systec System- Und Anlagentechnik Gmbh & Co. Kg | Vakuumbeschichtungsanlage zur homogenen PVD-Beschichtung |
JP4992039B2 (ja) * | 2007-03-28 | 2012-08-08 | 株式会社昭和真空 | 成膜装置及び成膜方法 |
CN101910453B (zh) | 2007-12-28 | 2016-03-09 | 株式会社爱发科 | 成膜装置及成膜方法 |
JP2009228062A (ja) | 2008-03-24 | 2009-10-08 | Panasonic Corp | スパッタ成膜装置及びスパッタ成膜方法 |
DE102008062332A1 (de) | 2008-12-15 | 2010-06-17 | Gühring Ohg | Vorrichtung zur Oberflächenbehandlung und/oder -beschichtung von Substratkomponenten |
-
2010
- 2010-07-28 DE DE102010032591A patent/DE102010032591A1/de not_active Withdrawn
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2011
- 2011-07-22 CN CN201180045868.8A patent/CN103119193B/zh active Active
- 2011-07-22 US US13/811,222 patent/US10767261B2/en active Active
- 2011-07-22 KR KR1020177010786A patent/KR101918875B1/ko active IP Right Grant
- 2011-07-22 WO PCT/EP2011/003679 patent/WO2012010318A1/de active Application Filing
- 2011-07-22 JP JP2013521007A patent/JP5721827B2/ja active Active
- 2011-07-22 EP EP11746453.7A patent/EP2596145B1/de active Active
- 2011-07-22 DE DE202011110499.4U patent/DE202011110499U1/de not_active Expired - Lifetime
- 2011-07-22 KR KR1020137004277A patent/KR20130132753A/ko active Application Filing
- 2011-07-25 TW TW100126157A patent/TWI518193B/zh active
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TWI518193B (zh) | 2016-01-21 |
EP2596145B1 (de) | 2016-07-06 |
US10767261B2 (en) | 2020-09-08 |
KR20170046195A (ko) | 2017-04-28 |
CN103119193B (zh) | 2016-06-22 |
CN103119193A (zh) | 2013-05-22 |
DE102010032591A1 (de) | 2012-01-26 |
US20130316096A1 (en) | 2013-11-28 |
EP2596145A1 (de) | 2013-05-29 |
KR20130132753A (ko) | 2013-12-05 |
WO2012010318A1 (de) | 2012-01-26 |
KR101918875B1 (ko) | 2018-11-14 |
DE202011110499U1 (de) | 2014-04-23 |
TW201211286A (en) | 2012-03-16 |
JP2013535576A (ja) | 2013-09-12 |
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