JP5710455B2 - 装置および磁気素子 - Google Patents

装置および磁気素子 Download PDF

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Publication number
JP5710455B2
JP5710455B2 JP2011260601A JP2011260601A JP5710455B2 JP 5710455 B2 JP5710455 B2 JP 5710455B2 JP 2011260601 A JP2011260601 A JP 2011260601A JP 2011260601 A JP2011260601 A JP 2011260601A JP 5710455 B2 JP5710455 B2 JP 5710455B2
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JP
Japan
Prior art keywords
layer
afm
free
tab
free layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011260601A
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English (en)
Japanese (ja)
Other versions
JP2012119053A (ja
JP2012119053A5 (enExample
Inventor
ソン・ディオン
マーク・ウィリアム・コビントン
チン・ホー
ディミタール・ベリコフ・ディミトロフ
ティエン・ウェイ
ジョン・ウォンジュン
スニータ・バードワジ・ゴンゴパッダエ
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Seagate Technology LLC
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Seagate Technology LLC
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Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2012119053A publication Critical patent/JP2012119053A/ja
Publication of JP2012119053A5 publication Critical patent/JP2012119053A5/ja
Application granted granted Critical
Publication of JP5710455B2 publication Critical patent/JP5710455B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
JP2011260601A 2010-11-30 2011-11-29 装置および磁気素子 Expired - Fee Related JP5710455B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/956,752 2010-11-30
US12/956,752 US8553369B2 (en) 2010-11-30 2010-11-30 Magnetic element with improved stability and including at least one antiferromagnetic tab

Publications (3)

Publication Number Publication Date
JP2012119053A JP2012119053A (ja) 2012-06-21
JP2012119053A5 JP2012119053A5 (enExample) 2012-09-27
JP5710455B2 true JP5710455B2 (ja) 2015-04-30

Family

ID=46126506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011260601A Expired - Fee Related JP5710455B2 (ja) 2010-11-30 2011-11-29 装置および磁気素子

Country Status (4)

Country Link
US (1) US8553369B2 (enExample)
JP (1) JP5710455B2 (enExample)
KR (1) KR101376207B1 (enExample)
CN (1) CN102592609B (enExample)

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US8760819B1 (en) * 2010-12-23 2014-06-24 Western Digital (Fremont), Llc Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields
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US8582249B2 (en) * 2011-04-26 2013-11-12 Seagate Technology Llc Magnetic element with reduced shield-to-shield spacing
US8884616B2 (en) * 2011-06-22 2014-11-11 Infineon Technologies Ag XMR angle sensors
US8675318B1 (en) * 2011-11-22 2014-03-18 Western Digital (Fremont), Llc Method and system for providing a read transducer having a reduced shield-to-shield spacing
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US8837092B2 (en) * 2012-06-29 2014-09-16 Seagate Technology Llc Magnetic element with biasing structure distal the air bearing surface
US9269382B1 (en) 2012-06-29 2016-02-23 Western Digital (Fremont), Llc Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities
US8780508B2 (en) 2012-06-29 2014-07-15 Seagate Technology Llc Magnetic element with biased side shield lamination
US8711528B1 (en) 2012-06-29 2014-04-29 Western Digital (Fremont), Llc Tunnel magnetoresistance read head with narrow shield-to-shield spacing
US8711526B2 (en) * 2012-06-29 2014-04-29 Seagate Technology Llc Magnetic element with top shield coupled side shield lamination
US8896971B2 (en) * 2012-08-21 2014-11-25 Seagate Technology Llc Aligned magnetic insulating feature
US8797692B1 (en) 2012-09-07 2014-08-05 Western Digital (Fremont), Llc Magnetic recording sensor with AFM exchange coupled shield stabilization
US8854773B2 (en) * 2012-11-28 2014-10-07 Seagate Technology Llc Side shield biasing layer separated from an air bearing surface
US8760822B1 (en) 2012-11-28 2014-06-24 Western Digital (Fremont), Llc Method and system for providing a read transducer having an extended pinned layer and soft magnetic bias structures with improved stability
US8780505B1 (en) 2013-03-12 2014-07-15 Western Digital (Fremont), Llc Method and system for providing a read transducer having an improved composite magnetic shield
US8842396B1 (en) * 2013-03-12 2014-09-23 Seagate Technology Llc Magnetic sensor with differing stripe heights
US9013836B1 (en) 2013-04-02 2015-04-21 Western Digital (Fremont), Llc Method and system for providing an antiferromagnetically coupled return pole
US9318130B1 (en) 2013-07-02 2016-04-19 Western Digital (Fremont), Llc Method to fabricate tunneling magnetic recording heads with extended pinned layer
US9305578B1 (en) * 2013-08-01 2016-04-05 Seagate Technology Llc Magnetic element with reduced shield-to-shield spacing
US9218826B1 (en) * 2013-08-16 2015-12-22 Seagate Technology Llc Tuned horizontally symmetric magnetic stack
US9202482B2 (en) * 2013-08-27 2015-12-01 HGST Netherlands B.V. Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer
US9042062B2 (en) * 2013-08-27 2015-05-26 HGST Netherlands B.V. Magnetic sensor with recessed AFM shape enhanced pinning and soft magnetic bias
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US9214172B2 (en) * 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head
US9099123B1 (en) 2014-02-11 2015-08-04 HGST Netherlands B.V. Magnetic sensor having optimal free layer back edge shape and extended pinned layer
US20150248907A1 (en) * 2014-02-28 2015-09-03 HGST Netherlands B.V. Recessed irmn reader sensor design with high hk applied to both reference and pin layers
US9076468B1 (en) * 2014-03-12 2015-07-07 HGST Netherlands B.V. Scissor magnetic read sensor with shape enhanced soft magnetic side shield for improved stability
US9007729B1 (en) * 2014-04-29 2015-04-14 HGST Netherlands B.V. Reader sensor having a recessed antiferromagnetic (AFM) pinning layer
US9331123B2 (en) * 2014-05-09 2016-05-03 Tower Semiconductor Ltd. Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
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Also Published As

Publication number Publication date
US20120134057A1 (en) 2012-05-31
KR20120059433A (ko) 2012-06-08
JP2012119053A (ja) 2012-06-21
CN102592609B (zh) 2015-12-02
US8553369B2 (en) 2013-10-08
KR101376207B1 (ko) 2014-03-21
CN102592609A (zh) 2012-07-18

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