CN102592609B - 具有改进的稳定性的磁性元件 - Google Patents

具有改进的稳定性的磁性元件 Download PDF

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Publication number
CN102592609B
CN102592609B CN201110463134.3A CN201110463134A CN102592609B CN 102592609 B CN102592609 B CN 102592609B CN 201110463134 A CN201110463134 A CN 201110463134A CN 102592609 B CN102592609 B CN 102592609B
Authority
CN
China
Prior art keywords
layer
free layer
ferromagnetic free
magnetic
afm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110463134.3A
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English (en)
Chinese (zh)
Other versions
CN102592609A (zh
Inventor
宋电
M·W·科温顿
Q·何
D·V·季米特洛夫
田伟
丁元俊
S·B·甘歌帕德亚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
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Seagate Technology LLC
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Filing date
Publication date
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Publication of CN102592609A publication Critical patent/CN102592609A/zh
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Publication of CN102592609B publication Critical patent/CN102592609B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
CN201110463134.3A 2010-11-30 2011-11-30 具有改进的稳定性的磁性元件 Expired - Fee Related CN102592609B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/956,752 2010-11-30
US12/956,752 US8553369B2 (en) 2010-11-30 2010-11-30 Magnetic element with improved stability and including at least one antiferromagnetic tab

Publications (2)

Publication Number Publication Date
CN102592609A CN102592609A (zh) 2012-07-18
CN102592609B true CN102592609B (zh) 2015-12-02

Family

ID=46126506

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110463134.3A Expired - Fee Related CN102592609B (zh) 2010-11-30 2011-11-30 具有改进的稳定性的磁性元件

Country Status (4)

Country Link
US (1) US8553369B2 (enExample)
JP (1) JP5710455B2 (enExample)
KR (1) KR101376207B1 (enExample)
CN (1) CN102592609B (enExample)

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CN102456356B (zh) * 2010-10-26 2015-09-30 新科实业有限公司 磁阻传感器、磁头、磁头折片组合及硬盘驱动器
US8441756B1 (en) 2010-12-16 2013-05-14 Western Digital (Fremont), Llc Method and system for providing an antiferromagnetically coupled writer
US9123359B1 (en) 2010-12-22 2015-09-01 Western Digital (Fremont), Llc Magnetic recording transducer with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields and method of fabrication
US8760819B1 (en) * 2010-12-23 2014-06-24 Western Digital (Fremont), Llc Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields
US8400738B2 (en) 2011-04-25 2013-03-19 Seagate Technology Llc Magnetic element with dual magnetic moments
US8582249B2 (en) * 2011-04-26 2013-11-12 Seagate Technology Llc Magnetic element with reduced shield-to-shield spacing
US8884616B2 (en) * 2011-06-22 2014-11-11 Infineon Technologies Ag XMR angle sensors
US8675318B1 (en) * 2011-11-22 2014-03-18 Western Digital (Fremont), Llc Method and system for providing a read transducer having a reduced shield-to-shield spacing
US8879214B2 (en) * 2011-12-21 2014-11-04 HGST Netherlands B.V. Half metal trilayer TMR reader with negative interlayer coupling
US8837092B2 (en) * 2012-06-29 2014-09-16 Seagate Technology Llc Magnetic element with biasing structure distal the air bearing surface
US9269382B1 (en) 2012-06-29 2016-02-23 Western Digital (Fremont), Llc Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities
US8780508B2 (en) 2012-06-29 2014-07-15 Seagate Technology Llc Magnetic element with biased side shield lamination
US8711528B1 (en) 2012-06-29 2014-04-29 Western Digital (Fremont), Llc Tunnel magnetoresistance read head with narrow shield-to-shield spacing
US8711526B2 (en) * 2012-06-29 2014-04-29 Seagate Technology Llc Magnetic element with top shield coupled side shield lamination
US8896971B2 (en) * 2012-08-21 2014-11-25 Seagate Technology Llc Aligned magnetic insulating feature
US8797692B1 (en) 2012-09-07 2014-08-05 Western Digital (Fremont), Llc Magnetic recording sensor with AFM exchange coupled shield stabilization
US8854773B2 (en) * 2012-11-28 2014-10-07 Seagate Technology Llc Side shield biasing layer separated from an air bearing surface
US8760822B1 (en) 2012-11-28 2014-06-24 Western Digital (Fremont), Llc Method and system for providing a read transducer having an extended pinned layer and soft magnetic bias structures with improved stability
US8780505B1 (en) 2013-03-12 2014-07-15 Western Digital (Fremont), Llc Method and system for providing a read transducer having an improved composite magnetic shield
US8842396B1 (en) * 2013-03-12 2014-09-23 Seagate Technology Llc Magnetic sensor with differing stripe heights
US9013836B1 (en) 2013-04-02 2015-04-21 Western Digital (Fremont), Llc Method and system for providing an antiferromagnetically coupled return pole
US9318130B1 (en) 2013-07-02 2016-04-19 Western Digital (Fremont), Llc Method to fabricate tunneling magnetic recording heads with extended pinned layer
US9305578B1 (en) * 2013-08-01 2016-04-05 Seagate Technology Llc Magnetic element with reduced shield-to-shield spacing
US9218826B1 (en) * 2013-08-16 2015-12-22 Seagate Technology Llc Tuned horizontally symmetric magnetic stack
US9202482B2 (en) * 2013-08-27 2015-12-01 HGST Netherlands B.V. Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer
US9042062B2 (en) * 2013-08-27 2015-05-26 HGST Netherlands B.V. Magnetic sensor with recessed AFM shape enhanced pinning and soft magnetic bias
US20150092303A1 (en) 2013-10-01 2015-04-02 HGST Netherlands B.V. Graded side shield gap reader
US9214172B2 (en) * 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head
US9099123B1 (en) 2014-02-11 2015-08-04 HGST Netherlands B.V. Magnetic sensor having optimal free layer back edge shape and extended pinned layer
US20150248907A1 (en) * 2014-02-28 2015-09-03 HGST Netherlands B.V. Recessed irmn reader sensor design with high hk applied to both reference and pin layers
US9076468B1 (en) * 2014-03-12 2015-07-07 HGST Netherlands B.V. Scissor magnetic read sensor with shape enhanced soft magnetic side shield for improved stability
US9007729B1 (en) * 2014-04-29 2015-04-14 HGST Netherlands B.V. Reader sensor having a recessed antiferromagnetic (AFM) pinning layer
US9331123B2 (en) * 2014-05-09 2016-05-03 Tower Semiconductor Ltd. Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
US9330748B2 (en) 2014-05-09 2016-05-03 Tower Semiconductor Ltd. High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers
US9007725B1 (en) 2014-10-07 2015-04-14 Western Digital (Fremont), Llc Sensor with positive coupling between dual ferromagnetic free layer laminates
CN104442055B (zh) * 2014-11-27 2017-07-21 惠州市华阳光学技术有限公司 一种磁定向图案的制备方法及其制备设备
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US9269383B1 (en) * 2015-01-23 2016-02-23 HGST Netherlands B.V. Multi-sensor (MIMO) head having a back side antiferromagnetic middle shield
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CN110426660B (zh) * 2019-09-11 2024-11-15 昆山市鸿运通多层电路板有限公司 Gmi传感器灵敏度改进结构及其操作方法
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Also Published As

Publication number Publication date
US20120134057A1 (en) 2012-05-31
KR20120059433A (ko) 2012-06-08
JP2012119053A (ja) 2012-06-21
JP5710455B2 (ja) 2015-04-30
US8553369B2 (en) 2013-10-08
KR101376207B1 (ko) 2014-03-21
CN102592609A (zh) 2012-07-18

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