JP5703700B2 - 酸発生剤用の塩及びレジスト組成物 - Google Patents

酸発生剤用の塩及びレジスト組成物 Download PDF

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Publication number
JP5703700B2
JP5703700B2 JP2010252599A JP2010252599A JP5703700B2 JP 5703700 B2 JP5703700 B2 JP 5703700B2 JP 2010252599 A JP2010252599 A JP 2010252599A JP 2010252599 A JP2010252599 A JP 2010252599A JP 5703700 B2 JP5703700 B2 JP 5703700B2
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group
formula
represented
acid
monomer
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Japanese (ja)
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JP2012006907A (ja
Inventor
市川　幸司
幸司 市川
吉田　勲
勲 吉田
昌子 杉原
昌子 杉原
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2010252599A 2009-11-18 2010-11-11 酸発生剤用の塩及びレジスト組成物 Active JP5703700B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010252599A JP5703700B2 (ja) 2009-11-18 2010-11-11 酸発生剤用の塩及びレジスト組成物

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009262881 2009-11-18
JP2009262881 2009-11-18
JP2010122503 2010-05-28
JP2010122503 2010-05-28
JP2010252599A JP5703700B2 (ja) 2009-11-18 2010-11-11 酸発生剤用の塩及びレジスト組成物

Publications (2)

Publication Number Publication Date
JP2012006907A JP2012006907A (ja) 2012-01-12
JP5703700B2 true JP5703700B2 (ja) 2015-04-22

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Family Applications (1)

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JP2010252599A Active JP5703700B2 (ja) 2009-11-18 2010-11-11 酸発生剤用の塩及びレジスト組成物

Country Status (2)

Country Link
JP (1) JP5703700B2 (ko)
KR (1) KR101787958B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012193170A (ja) * 2011-03-02 2012-10-11 Sumitomo Chemical Co Ltd 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101771390B1 (ko) 2009-11-18 2017-08-25 스미또모 가가꾸 가부시키가이샤 염 및 이를 함유하는 포토레지스트 조성물
TWI473796B (zh) 2009-11-18 2015-02-21 Sumitomo Chemical Co 鹽及含有該鹽之光阻組成物
JP5953670B2 (ja) 2010-08-27 2016-07-20 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP5934536B2 (ja) 2011-04-07 2016-06-15 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5852490B2 (ja) 2011-04-07 2016-02-03 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6022788B2 (ja) 2011-04-07 2016-11-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6005964B2 (ja) 2011-04-07 2016-10-12 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6214134B2 (ja) 2011-04-13 2017-10-18 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP6169848B2 (ja) * 2012-01-19 2017-07-26 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP6130673B2 (ja) * 2012-01-19 2017-05-17 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP6119283B2 (ja) * 2012-02-16 2017-04-26 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6208990B2 (ja) * 2012-07-05 2017-10-04 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6059983B2 (ja) * 2012-12-28 2017-01-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜及びパターン形成方法、並びに、電子デバイスの製造方法
JP6413617B2 (ja) * 2013-10-24 2018-10-31 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP6944246B2 (ja) * 2015-12-28 2021-10-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7044562B2 (ja) * 2017-01-19 2022-03-30 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7210894B2 (ja) * 2017-05-30 2023-01-24 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7146586B2 (ja) * 2017-12-08 2022-10-04 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5070814B2 (ja) * 2005-11-21 2012-11-14 住友化学株式会社 化学増幅型レジスト組成物の酸発生剤用の塩
TWI438182B (zh) * 2007-07-25 2014-05-21 Sumitomo Chemical Co 適用於酸產生劑之鹽以及含有該鹽之化學放大正型抗蝕劑組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012193170A (ja) * 2011-03-02 2012-10-11 Sumitomo Chemical Co Ltd 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

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JP2012006907A (ja) 2012-01-12
KR20110055415A (ko) 2011-05-25
KR101787958B1 (ko) 2017-10-19

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