JP5701287B2 - ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 - Google Patents
ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 Download PDFInfo
- Publication number
- JP5701287B2 JP5701287B2 JP2012501820A JP2012501820A JP5701287B2 JP 5701287 B2 JP5701287 B2 JP 5701287B2 JP 2012501820 A JP2012501820 A JP 2012501820A JP 2012501820 A JP2012501820 A JP 2012501820A JP 5701287 B2 JP5701287 B2 JP 5701287B2
- Authority
- JP
- Japan
- Prior art keywords
- dopant material
- dopant
- region
- silicon
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002019 doping agent Substances 0.000 title claims description 145
- 239000000463 material Substances 0.000 title claims description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 title description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 41
- 229910052760 oxygen Inorganic materials 0.000 claims description 41
- 239000001301 oxygen Substances 0.000 claims description 41
- 229910052796 boron Inorganic materials 0.000 claims description 35
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 239000002210 silicon-based material Substances 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 10
- 238000011144 upstream manufacturing Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 6
- 238000010298 pulverizing process Methods 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 238000007711 solidification Methods 0.000 description 16
- 230000008023 solidification Effects 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 108010001779 Ancrod Proteins 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- -1 solar cell element Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Description
本発明の実施形態に係るドーパント材は、多結晶シリコン中にドーパント源となる元素が含まれている。このとき用いられる多結晶シリコンの純度は、太陽電池用シリコンインゴットを作製する際に用いられるシリコン材料と同等の純度とすることができ、例えば、99.9999%以上であってもよい。
Cb=1/(ρb×q×μ)
使用装置:Cameca社 IMS−4f
1次イオン種:Cs+
1次イオン加速電圧:14.5kV
ラスター領域:125μm
分析領域:30μmφ
測定真空度:1×10−7Pa
次に、本発明のドーパント材の製造方法の実施形態について説明する。まず、本実施形態に係るドーパント材を製造する際に使用する製造装置について説明する。
次に、本実施形態に係る半導体基板について、説明する。
次に、上述した半導体基板を用いた本発明の第1の実施形態に係る太陽電池素子10について説明する。
1a 溶融部
1b 保持部
1c 注湯口
2 鋳型
3 坩堝加熱手段
4 離型材
5 鋳型加熱手段
6 冷却手段
7 断熱材
10、20 太陽電池素子
11 半導体基板
11a 第1の面
11b 凹凸形状
11c 第2の面
12 拡散層
13 反射防止膜
14 第1電極
15 第2電極
15a アルミニウム電極
15b 銀電極
16 BSF層
21 ドーパント材の製造装置
Claims (10)
- シリコンを含む半導体材料に添加されるドーパント材であって、
前記ドーパント源となる元素の濃度が1×1018atoms/cm3以上1×1020atoms/cm3以下であるn型またはp型のドーパント源となる元素と、酸素と、多結晶シリコンとを含む凝固体が、第1方向において上流側に位置する第1領域と、該第1領域に対して下流側に位置する第2領域とを備えており、
前記ドーパント源となる元素の濃度は、前記第1領域の方が前記第2領域よりも大きく、且つ、前記酸素の濃度は、前記第1領域の方が前記第2領域よりも小さく、
前記第2領域の方が前記第1領域よりも前記第1方向における長さが長くなるように、前記凝固体から取り出された、ドーパント材。 - 前記ドーパント源となる元素は、ホウ素である、請求項1に記載のドーパント材。
- 前記ホウ素の濃度は、5×1018atoms/cm3以上5×1019atoms/cm3以下である、請求項2に記載のドーパント材。
- 前記酸素の濃度がSIMS測定において1×1016atoms/cm3以上1×1018atoms/cm3以下である、請求項1〜3のいずれかに記載のドーパント材。
- 前記酸素の濃度は、前記第1方向に沿って、前記第2領域から前記第1領域に向かうにつれて徐々にまたは段階的に小さくなる、請求項1〜4のいずれかに記載のドーパント材。
- 前記第1領域における前記酸素の濃度の減少率は、前記第2領域における前記酸素の濃度の減少率よりも小さい、請求項1〜5のいずれかに記載のドーパント材。
- 請求項1〜6のいずれかに記載のドーパント材を製造する製造方法であって、
シリコン材料にドーパント源となる元素を混入させて溶融し、溶融混合物を生成する工程と、
前記溶融混合物を冷却して凝固し、前記ドーパント源となる元素と多結晶シリコンとを含む、ドーパント材である凝固体を生成する冷却工程とを備える、ドーパント材の製造方法。 - 前記冷却工程は、一方向に向かって、順次、前記溶融混合物が凝固するように冷却する
、請求項7に記載のドーパント材の製造方法。 - 前記凝固体を前記一方向と直交する方向に沿って切断した後、粉砕する工程をさらに備える、請求項8に記載のドーパント材の製造方法。
- 前記溶融混合物を生成する工程において、前記ドーパント源となる元素として、ホウ素を用いる、請求項7〜9のいずれかに記載のドーパント材の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012501820A JP5701287B2 (ja) | 2010-02-23 | 2011-02-23 | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010036839 | 2010-02-23 | ||
JP2010036839 | 2010-02-23 | ||
PCT/JP2011/053991 WO2011105430A1 (ja) | 2010-02-23 | 2011-02-23 | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 |
JP2012501820A JP5701287B2 (ja) | 2010-02-23 | 2011-02-23 | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011105430A1 JPWO2011105430A1 (ja) | 2013-06-20 |
JP5701287B2 true JP5701287B2 (ja) | 2015-04-15 |
Family
ID=44506832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012501820A Expired - Fee Related JP5701287B2 (ja) | 2010-02-23 | 2011-02-23 | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120318350A1 (ja) |
JP (1) | JP5701287B2 (ja) |
WO (1) | WO2011105430A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11885036B2 (en) | 2019-08-09 | 2024-01-30 | Leading Edge Equipment Technologies, Inc. | Producing a ribbon or wafer with regions of low oxygen concentration |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07277875A (ja) * | 1994-04-01 | 1995-10-24 | Sumitomo Sitix Corp | 結晶成長方法 |
JP2002020192A (ja) * | 2000-06-29 | 2002-01-23 | Shin Etsu Handotai Co Ltd | Gaドープシリコン単結晶の製造方法 |
JP2002104897A (ja) * | 2000-09-26 | 2002-04-10 | Shin Etsu Handotai Co Ltd | シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法 |
JP2003197940A (ja) * | 2001-12-25 | 2003-07-11 | Kyocera Corp | 太陽電池用基板の粗面化法 |
JP2005112669A (ja) * | 2003-10-08 | 2005-04-28 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び原料結晶の管理方法並びに管理システム |
JP2007059644A (ja) * | 2005-08-25 | 2007-03-08 | Toyota Motor Corp | 光起電力素子 |
JP2007059380A (ja) * | 2005-06-07 | 2007-03-08 | E I Du Pont De Nemours & Co | アルミニウム厚膜組成物、電極、半導体デバイスおよびそれらを作製する方法 |
JP2009141381A (ja) * | 2003-11-27 | 2009-06-25 | Kyocera Corp | 太陽電池モジュールおよび太陽電池素子構造体 |
JP2009181992A (ja) * | 2008-01-29 | 2009-08-13 | Kyocera Corp | 太陽電池モジュールの修復方法 |
JP2009190945A (ja) * | 2008-02-15 | 2009-08-27 | Sumitomo Chemical Co Ltd | ホウ素添加シリコンの製造方法 |
JP2009249233A (ja) * | 2008-04-07 | 2009-10-29 | Sumco Corp | シリコン単結晶の育成方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
US6180497B1 (en) * | 1998-07-23 | 2001-01-30 | Canon Kabushiki Kaisha | Method for producing semiconductor base members |
JP3300812B2 (ja) * | 2000-01-19 | 2002-07-08 | 独立行政法人産業技術総合研究所 | 光電変換素子 |
WO2007084936A2 (en) * | 2006-01-20 | 2007-07-26 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
-
2011
- 2011-02-23 US US13/580,664 patent/US20120318350A1/en not_active Abandoned
- 2011-02-23 JP JP2012501820A patent/JP5701287B2/ja not_active Expired - Fee Related
- 2011-02-23 WO PCT/JP2011/053991 patent/WO2011105430A1/ja active Application Filing
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07277875A (ja) * | 1994-04-01 | 1995-10-24 | Sumitomo Sitix Corp | 結晶成長方法 |
JP2002020192A (ja) * | 2000-06-29 | 2002-01-23 | Shin Etsu Handotai Co Ltd | Gaドープシリコン単結晶の製造方法 |
JP2002104897A (ja) * | 2000-09-26 | 2002-04-10 | Shin Etsu Handotai Co Ltd | シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法 |
JP2003197940A (ja) * | 2001-12-25 | 2003-07-11 | Kyocera Corp | 太陽電池用基板の粗面化法 |
JP2005112669A (ja) * | 2003-10-08 | 2005-04-28 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び原料結晶の管理方法並びに管理システム |
JP2009141381A (ja) * | 2003-11-27 | 2009-06-25 | Kyocera Corp | 太陽電池モジュールおよび太陽電池素子構造体 |
JP2007059380A (ja) * | 2005-06-07 | 2007-03-08 | E I Du Pont De Nemours & Co | アルミニウム厚膜組成物、電極、半導体デバイスおよびそれらを作製する方法 |
JP2007059644A (ja) * | 2005-08-25 | 2007-03-08 | Toyota Motor Corp | 光起電力素子 |
JP2009181992A (ja) * | 2008-01-29 | 2009-08-13 | Kyocera Corp | 太陽電池モジュールの修復方法 |
JP2009190945A (ja) * | 2008-02-15 | 2009-08-27 | Sumitomo Chemical Co Ltd | ホウ素添加シリコンの製造方法 |
JP2009249233A (ja) * | 2008-04-07 | 2009-10-29 | Sumco Corp | シリコン単結晶の育成方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011105430A1 (ja) | 2011-09-01 |
US20120318350A1 (en) | 2012-12-20 |
JPWO2011105430A1 (ja) | 2013-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4382838A (en) | Novel silicon crystals and process for their preparation | |
JP2008156166A (ja) | シリコンインゴットの鋳造方法および切断方法 | |
US7601618B2 (en) | Method for producing semi-conditioning material wafers by moulding and directional crystallization | |
EP1742277A2 (en) | Polycrystalline silicon for solar cells and method for producing the same | |
JP4863637B2 (ja) | シリコン鋳造装置及び多結晶シリコンインゴットの鋳造方法 | |
JP2007015905A (ja) | 多結晶シリコンインゴット、多結晶シリコン基板、並びに太陽電池素子および多結晶シリコンインゴットの鋳造方法。 | |
KR101074304B1 (ko) | 금속 실리콘과 그 제조 방법 | |
JP6401051B2 (ja) | 多結晶シリコンインゴットの製造方法 | |
JP5701287B2 (ja) | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 | |
CN105951172A (zh) | N型/p型单晶硅晶锭的制造方法 | |
JP4748187B2 (ja) | Si結晶インゴットの製造方法 | |
CN203474952U (zh) | 铸锭用石英坩埚 | |
JP2006273628A (ja) | 多結晶シリコンインゴットの製造方法 | |
WO2013145558A1 (ja) | 多結晶シリコンおよびその鋳造方法 | |
JP6046780B2 (ja) | 多結晶シリコンインゴッドの製造方法 | |
Pupazan et al. | Effects of crucible coating on the quality of multicrystalline silicon grown by a Bridgman technique | |
Lau Jr et al. | In situ visualization of silicon wafer casting on silicon carbide as low nucleation undercooling substrate | |
WO2012111850A1 (ja) | 多結晶ウェーハ及びその製造方法、並びに多結晶材料の鋳造方法 | |
JP2004196577A (ja) | 多結晶シリコンの製造方法 | |
JP4817761B2 (ja) | 半導体インゴット及び太陽電池素子の製造方法 | |
JP5938092B2 (ja) | 高純度シリコンの製造方法、及びこの方法で得られた高純度シリコン、並びに高純度シリコン製造用シリコン原料 | |
CN105263859A (zh) | 硅锭的制造方法以及硅锭 | |
Saito et al. | A reusable mold in directional solidification for silicon solar cells | |
JP2013086157A (ja) | Cu−Ga合金スラブの製造方法 | |
JP2004322195A (ja) | 一方向凝固シリコンインゴット及びこの製造方法並びにシリコン板及び太陽電池用基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131001 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140715 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150217 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5701287 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |